Patents by Inventor Yusuke Otake
Yusuke Otake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210144321Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: ApplicationFiled: July 8, 2019Publication date: May 13, 2021Inventors: HIROFUMI YAMASHITA, SHOHEI SHIMADA, YUSUKE OTAKE, YUSUKE TANAKA, TOSHIFUMI WAKANO
-
Publication number: 20210135022Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.Type: ApplicationFiled: July 4, 2019Publication date: May 6, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takuro MURASE, Ryota WATANABE, Toshifumi WAKANO, Takuya MARUYAMA, Yusuke OTAKE, Tsutomu IMOTO, Yuji ISOGAI
-
Patent number: 10998355Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.Type: GrantFiled: September 18, 2019Date of Patent: May 4, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Toshifumi Wakano
-
Publication number: 20210006726Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.Type: ApplicationFiled: September 18, 2020Publication date: January 7, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kyohei YOSHIMURA, Toshifumi WAKANO, Yusuke OTAKE
-
Publication number: 20200366856Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.Type: ApplicationFiled: July 20, 2020Publication date: November 19, 2020Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
-
Patent number: 10827112Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.Type: GrantFiled: August 14, 2019Date of Patent: November 3, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Kyohei Yoshimura, Toshifumi Wakano, Yusuke Otake
-
Patent number: 10804309Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: November 25, 2019Date of Patent: October 13, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano
-
Publication number: 20200321369Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: June 18, 2020Publication date: October 8, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
-
Publication number: 20200295218Abstract: An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.Type: ApplicationFiled: September 21, 2018Publication date: September 17, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshifumi WAKANO, Yusuke OTAKE
-
Publication number: 20200258930Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.Type: ApplicationFiled: May 1, 2020Publication date: August 13, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Akira TANAKA, Yusuke OTAKE, Toshifumi WAKANO
-
Patent number: 10741605Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: October 23, 2018Date of Patent: August 11, 2020Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20200251508Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.Type: ApplicationFiled: April 20, 2020Publication date: August 6, 2020Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
-
Publication number: 20200249083Abstract: An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the PHOTODIODE substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.Type: ApplicationFiled: September 3, 2018Publication date: August 6, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kyosuke ITO, Toshifumi WAKANO, Yusuke OTAKE
-
Publication number: 20200203415Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.Type: ApplicationFiled: February 27, 2020Publication date: June 25, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenji KOBAYASHI, Toshifumi WAKANO, Yusuke OTAKE
-
Patent number: 10680028Abstract: An imaging device includes a first chip (12). The first chip includes a first pixel (21) and a second pixel (21). The first pixel includes a first anode region (31) and a first cathode region (32), and the second pixel includes a second anode region (31) and a second cathode region (32). The first chip includes a first wiring layer (23). The first wiring layer includes a first anode electrode (37), a first anode via (38) coupled to the first anode electrode (37) and the first anode region (31), and a second anode via (38) coupled to the first anode electrode (37) and the second anode region (31).Type: GrantFiled: July 25, 2018Date of Patent: June 9, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Kenji Kobayashi, Toshifumi Wakano, Yusuke Otake
-
Patent number: 10672818Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.Type: GrantFiled: November 15, 2017Date of Patent: June 2, 2020Assignee: SONY CORPORATIONInventors: Akira Tanaka, Yusuke Otake, Toshifumi Wakano
-
Patent number: 10651222Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.Type: GrantFiled: January 18, 2017Date of Patent: May 12, 2020Assignee: SONY CORPORATIONInventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
-
Publication number: 20200091208Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: November 25, 2019Publication date: March 19, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
-
Publication number: 20200083265Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.Type: ApplicationFiled: September 18, 2019Publication date: March 12, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Toshifumi WAKANO
-
Patent number: 10580817Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: May 10, 2019Date of Patent: March 3, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano