Abstract: Provided is a semiconductor device capable of achieving high detection efficiency and low jitter without depending on an increase in thickness of a substrate. A semiconductor device is provided with a plurality of pixels in each of which an avalanche photodiode element that photoelectrically converts incident light is formed, and each of the plurality of pixels is provided with a substrate including a first semiconductor material, and a stacked portion stacked on a surface on a light incident side of the substrate and including a second semiconductor material different from the first semiconductor material.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: The present technology relates to a light receiving device, a method for manufacturing the same, and a distance measuring device capable of improving distance measurement accuracy by maintaining the balance of transfer capability between transfer transistors.

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: To improve sensitivity to near-infrared light and suppress deterioration of timing jitter characteristics. A photodetector includes: a pixel region in which a plurality of pixels each having a photoelectric converter is arranged in a matrix, in which the photoelectric converter includes: a first semiconductor portion segmented by a separator; a second semiconductor portion provided on a side of a first face of the first semiconductor portion, the first face being opposite to a second face of the first semiconductor portion, the second semiconductor portion containing germanium; a light absorber with which the second semiconductor portion is provided, the light absorber being configured to absorb light having entered the second semiconductor portion to generate a carrier; and a multiplier with which the first semiconductor portion is provided, the multiplier being configured to avalanche-multiply the carrier generated by the light absorber.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

Abstract: A sensor device according to the present technology includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed, and each of the first wire, the second wire, and the third wire is formed by bonding a first portion formed in the first wire formation layer and extending in a first direction and a second portion formed in the second wire formation layer and extending in the first direction.

Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: A photodetector including: an amplification region that includes a PN junction provided in a depth direction in a semiconductor layer and that is to be electrically coupled to a cathode; a separation region that defines a pixel region including the amplification region; a hole accumulation region that is provided along a side surface of the separation region and that is to be electrically coupled to an anode; and a gate electrode provided in a region between the amplification region and the hole accumulation region and stacked over the semiconductor layer with a gate insulating film interposed therebetween.

Abstract: The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Abstract: The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Abstract: Disclosed herein is a ranging module including a light receiving element, a light emitting unit, and a light-emission control unit. The light receiving element has plural transfer gates which distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that photoelectrically converts incident light, and at least two of the plural transfer gates are disposed point-symmetrically with respect to an optical center as seen from a direction of incidence of the light. The light emitting unit emits irradiation light having a periodically varying brightness. The light-emission control unit controls irradiation timing of the irradiation light.

Abstract: Provided is a light receiving element capable of lowering the on-voltage of a transfer transistor and suppressing transfer failures at a low on-voltage.

Abstract: Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

Abstract: An imaging element includes a photoelectric converting section configured to perform photoelectric conversion, a plurality of charge storage sections configured to store charge obtained by the photoelectric converting section, and a plurality of transfer sections configured to transfer the charge from the photoelectric converting section to each of the plurality of charge storage sections. Each of the charge storage sections is provided between a first gate of a transistor included in a corresponding one of the transfer sections and a second gate provided at a position parallel to the first gate.

Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.