Patents by Inventor Yusuke Otake
Yusuke Otake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240055457Abstract: A photodetection device is provided which includes a pixel array unit including a plurality of pixels arranged in a matrix on a semiconductor substrate to detect light, in which each of the pixels includes a pixel separation wall that surrounds the pixels and separates the pixels from one another, a photoelectric conversion unit inside the semiconductor substrate to generate an electric charge by light, a multiplication region inside the semiconductor substrate to multiply the electric charge from the photoelectric conversion unit, and first and second reflective portions that reflect light traveling toward outside the semiconductor substrate into the semiconductor substrate, the first reflective portion is provided, on a first surface that receives light of the semiconductor substrate, to protrude from the pixel separation wall toward a pixel center, and the second reflective portion is provided on a second surface of the semiconductor substrate facing the first surface.Type: ApplicationFiled: December 22, 2021Publication date: February 15, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Mutsumi OKAZAKI, Yusuke OTAKE
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Publication number: 20240054902Abstract: In order to achieve the above objects, according to the present invention, an information processing system includes a wind-condition estimation unit that estimates wind-condition information in a predetermined space region, and an evaluation unit that evaluates flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information. According to the present invention, an information processing method includes estimating wind-condition information in a predetermined space region, and evaluating flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information.Type: ApplicationFiled: July 11, 2023Publication date: February 15, 2024Inventors: Daisuke KAWAGUCHI, Yusuke OTAKE, Takahiro ITO, Taku SHIMIZU, Mikio BANDO
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Publication number: 20240038913Abstract: The present technology relates to a light receiving element, a distance measuring system, and an electronic device capable of reducing unintended edge breakdown in a case where a pixel is miniaturized. A light receiving element includes a pixel that includes a PN junction region in which a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type opposite to the first conductivity type are joined, and a third semiconductor region of the first conductivity type that is not connected to any wiring outside the first semiconductor region near a first surface of a substrate on which a wiring that supplies a predetermined power supply voltage to the first semiconductor region is formed. The present technology can be applied to, for example, a distance measuring sensor that receives reflected light and measures a distance, and the like.Type: ApplicationFiled: November 10, 2021Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Katsuhisa TANAKA, Yusuke OTAKE
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Publication number: 20240038810Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20240006445Abstract: Provided is a light receiving element in a semiconductor substrate and surrounded by a pixel isolation wall, the light receiving element including a multiplication region that amplifies a charge, a cathode unit on a surface of the multiplication region on an opposite side from a light receiving surface, a hole accumulation region covering the light receiving surface and an inner side surface of the pixel isolation wall, and an anode unit on a part of a surface of the hole accumulation region covering the inner side surface of the pixel isolation wall that is on the opposite side from the light receiving surface, wherein when the semiconductor substrate is viewed from above a surface on the opposite side from the light receiving surface, a center point of the multiplication region is farther from the anode unit than a center point of the light receiving element.Type: ApplicationFiled: November 5, 2021Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Junki SUZUKI, Yusuke OTAKE
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Patent number: 11849219Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.Type: GrantFiled: May 12, 2022Date of Patent: December 19, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Kyohei Yoshimura, Toshifumi Wakano, Yusuke Otake
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Patent number: 11849200Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.Type: GrantFiled: March 19, 2020Date of Patent: December 19, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kyosuke Ito, Yusuke Otake
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Patent number: 11830960Abstract: To reduce a variation in the characteristics of avalanche photodiode sensors. An avalanche photodiode sensor includes a first semiconductor region, a second semiconductor region, a low-impurity-concentration region, a first contact region, and a second contact region. The first semiconductor region is disposed on a surface of a semiconductor substrate. The second semiconductor region is disposed below the first semiconductor region and has a different conductivity type from the first semiconductor region. The low-impurity-concentration region is disposed adjacent to the second semiconductor region. The first contact region is disposed on the surface of the semiconductor substrate to be adjacent to the first semiconductor region and has electrodes connected thereto. The second contact region is disposed adjacent to the low-impurity-concentration region and has electrodes connected thereto.Type: GrantFiled: February 20, 2020Date of Patent: November 28, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Mutsumi Okazaki, Yusuke Otake
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Patent number: 11791359Abstract: The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.Type: GrantFiled: January 19, 2022Date of Patent: October 17, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Toshifumi Wakano
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Publication number: 20230268365Abstract: The present disclosure relates to a light reception element and an electronic device that make it possible to achieve better performance. Provided is a SPAD element including an avalanche multiplication region provided at a junction surface between an N-type diffusion layer and a P-type diffusion layer provided on a side of a sensor substrate opposite from a light reception surface of the sensor substrate, a hole accumulation layer provided so as to surround a lateral surface and a light reception surface of a well provided in the sensor substrate, a pinning layer provided outside the hole accumulation layer, and an in-pixel trench structure provided in a pixel region, the pinning layer being formed all over an outer peripheral surface of the in-pixel trench structure. The present technology is applicable to, for example, a distance image sensor that performs time-of-flight (ToF)-based distance measurement.Type: ApplicationFiled: July 7, 2021Publication date: August 24, 2023Inventors: Kenji Kurata, Yusuke Otake, Shohei Shimada
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Publication number: 20230253420Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.Type: ApplicationFiled: April 13, 2023Publication date: August 10, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro YAGI, Yusuke OTAKE, Kyosuke ITO
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Publication number: 20230246055Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.Type: ApplicationFiled: April 7, 2023Publication date: August 3, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenji KOBAYASHI, Toshifumi WAKANO, Yusuke OTAKE
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Publication number: 20230238405Abstract: Provided is a semiconductor device capable of achieving high detection efficiency and low jitter without depending on an increase in thickness of a substrate. A semiconductor device is provided with a plurality of pixels in each of which an avalanche photodiode element that photoelectrically converts incident light is formed, and each of the plurality of pixels is provided with a substrate including a first semiconductor material, and a stacked portion stacked on a surface on a light incident side of the substrate and including a second semiconductor material different from the first semiconductor material.Type: ApplicationFiled: May 7, 2021Publication date: July 27, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shohei SHIMADA, Yusuke OTAKE, Toshifumi WAKANO
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Patent number: 11699716Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.Type: GrantFiled: November 15, 2021Date of Patent: July 11, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenji Kobayashi, Toshifumi Wakano, Yusuke Otake
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Patent number: 11683601Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.Type: GrantFiled: July 20, 2020Date of Patent: June 20, 2023Assignee: SONY CORPORATIONInventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
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Patent number: 11670649Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.Type: GrantFiled: March 16, 2020Date of Patent: June 6, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichiro Yagi, Yusuke Otake, Kyosuke Ito
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Publication number: 20230154950Abstract: The present technology relates to a light receiving device, a method for manufacturing the same, and a distance measuring device capable of improving distance measurement accuracy by maintaining the balance of transfer capability between transfer transistors.Type: ApplicationFiled: May 27, 2021Publication date: May 18, 2023Inventors: Yuji Isogai, Yusuke Otake, Ryota Watanabe
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Patent number: 11652175Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.Type: GrantFiled: July 4, 2019Date of Patent: May 16, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takuro Murase, Ryota Watanabe, Toshifumi Wakano, Takuya Maruyama, Yusuke Otake, Tsutomu Imoto, Yuji Isogai
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Patent number: 11647301Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.Type: GrantFiled: July 20, 2020Date of Patent: May 9, 2023Assignee: SONY CORPORATIONInventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
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Publication number: 20230132945Abstract: To improve sensitivity to near-infrared light and suppress deterioration of timing jitter characteristics. A photodetector includes: a pixel region in which a plurality of pixels each having a photoelectric converter is arranged in a matrix, in which the photoelectric converter includes: a first semiconductor portion segmented by a separator; a second semiconductor portion provided on a side of a first face of the first semiconductor portion, the first face being opposite to a second face of the first semiconductor portion, the second semiconductor portion containing germanium; a light absorber with which the second semiconductor portion is provided, the light absorber being configured to absorb light having entered the second semiconductor portion to generate a carrier; and a multiplier with which the first semiconductor portion is provided, the multiplier being configured to avalanche-multiply the carrier generated by the light absorber.Type: ApplicationFiled: January 29, 2021Publication date: May 4, 2023Inventors: Yusuke Otake, Toshifumi Wakano