Abstract: A first power semiconductor element and a second power semiconductor element of a power semiconductor device are such that, when heat generated by the first power semiconductor element is larger than heat generated by the second power semiconductor element, a first distance from an end of the first power semiconductor element to an end of the conductor plate is larger than a second distance from an end of the second power semiconductor element to an end, connected to the second power semiconductor element, of a second conductor plate.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: A heat exchange device that is formed in a substantially rectangular shape and that cools a power semiconductor element, and a power conversion device comprising the heat exchange device, the heat exchange device including: a fin formation region in which cooling water flows in a transverse direction; and a buffer region formed in a lamination direction and facing the fin formation region, a partition wall being interposed therebetween, wherein an inlet and an outlet for the cooling water are respectively formed at at least one of both ends in a longitudinal direction, a flow path pit connecting the fin formation region and the buffer region is formed at both ends in the transverse direction, and the buffer region has a partition that divides the cooling water flowing in from the inlet and the cooling water flowing toward the outlet, and the inlet and the outlet are respectively connected to the fin formation region via the flow path pit.

Abstract: A power conversion device including: a semiconductor device; a first water channel and a second water channel stacked in a predetermined stacking direction and installed with the semiconductor device interposed therebetween; and a connecting water channel connecting the first water channel and the second water channel, in which the connecting water channel is formed by joining and fixing a joint member joined to the first water channel and the second water channel and a cover member separate from the joint member to each other, the first water channel and the second water channel are joined to the joint member by a joint formed in a plane parallel to the stacking direction, and the cover member covers the joint and is joined and fixed to the joint member.

Abstract: A heating element cooling structure includes a heating element, a water path member through which a refrigerant flows, and a heat conductive layer covering an outer surface of the water path member, wherein the heat conductive layer is formed of a material having a thermal conductivity higher than a thermal conductivity of the water path member, wherein the heat conductive layer includes a first region formed on the outer surface, of the water path member, close to the heating element, and a second region formed on the outer surface, of the water path member, away from the heating element, and wherein the first region and the second region of the heat conductive layer are continuously formed.

Abstract: A core part includes plural plates stacked with a gap therebetween so as to form plural refrigerant passages and plural cooling water passages. The refrigerant passages are communicated with each other in a stacking direction of the plates by a refrigerant inlet tank section and a refrigerant outlet tank section distanced from each other. A refrigerant inlet and a refrigerant outlet communicate with the refrigerant inlet tank section and the refrigerant outlet tank section, respectively, and are provided at one end of the core part in the stacking direction. The refrigerant inlet and the refrigerant inlet tank section are communicated with each other by a refrigerant inlet passage. A distance between a center of the refrigerant outlet tank section and a center of the refrigerant outlet is shorter than a distance between a center of the refrigerant inlet tank section and a center of the refrigerant inlet.

Abstract: A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni)6Sn5 and having a layer thickness of 1.2 to 4.0 ?m is formed at an interface between the Ni-based plated layer and the Sn-based solder.

Abstract: A power module includes a first conductor plate to which a first power semiconductor element is bonded, a second conductor plate to which a second power semiconductor element is bonded, the second conductor plate being disposed adjacent to the first conductor plate, a first heat-dissipating member disposed counter to the first conductor plate and the second conductor plate, and a first insulating sheet member disposed between the first heat-dissipating member and the first conductor plate. The first power semiconductor element is disposed at a position at which a first length from an end of the first conductor plate, the end being closer to the second conductor plate, to the first power semiconductor element is larger than a second length from an end of the first conductor plate, the end being far from the second conductor plate, to the first power semiconductor element, and the second length is larger than the thickness of the first conductor plate.

Abstract: Provided is an electric circuit body including: a power semiconductor element; a first conductor plate configured to be connected to one surface of the power semiconductor element; a first sheet-shaped member having a first resin insulation layer and configured to at least cover a surface of the first conductor plate; a sealing material configured to seal each of the power semiconductor element, the first conductor plate, and an end of the first sheet-shaped member; and a first cooling member configured to be adhesively attached to the first sheet-shaped member.

Abstract: A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layer 5 abuts on a heat dissipation surface 4a of a circuit body 100, and a heat dissipation member 7 abuts on the outside of the thermally conductive layer 5, which is a side of the heat dissipation surface 4a of the circuit body 100. A fixing member 8 abuts on a side of the circuit body 100 opposite to the heat dissipation surface 4a. A connection member 9 is penetrated at the respective end portions of the heat dissipation member 7 and the fixing member 8. FIG. 3 illustrates a state before a bolt and a nut of the connection member 9 are tightened. The heat dissipation member 7 holds a curved shape such that the central portion of the heat dissipation member 7 protrudes toward the circuit body 100.

Abstract: An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor device 1 includes an element installation conductor 2 including a first conductor portion 20a that is made of metal and is used for installing a power semiconductor element 300, a second conductor portion 20b that is made of metal and forms one or more main terminals 2a for transmitting a current to the power semiconductor element 300, and one or more control terminals 2b for transmitting a switching control signal to the power semiconductor element 300, and a third conductor portion 20c that is made of metal and is provided at a tip portion of the control terminal 2b.

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A heat exchanger is formed by stacking plates with each other. The heat exchanger includes a refrigerant receiving tank configured to receive a refrigerant, a refrigerant discharging tank configured to discharge the refrigerant that has heat-exchanged, and refrigerant passages in which heat exchange between the refrigerant and another fluid is performed. The refrigerant passages fluidly connect between the refrigerant receiving tank and the refrigerant discharging tank. The refrigerant receiving tank includes a swirl structure configured to generate a swirling component in a flow of the refrigerant in the refrigerant receiving tank.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: A heat exchanger includes a fin arranged in a first passage and a tubular tank portion formed so as to penetrate plate members stacked in a stacking direction. An inflow port is formed in a peripheral wall of the tank portion to allow a refrigerant to flow into the first passage. When the fin is arranged in a fin installation portion in the first passage, a passage reduction portion is formed at the inflow port and is narrower than a width of the fin installation portion in the stacking direction.

Abstract: An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor device 1 includes an element installation conductor 2 including a first conductor portion 20a that is made of metal and is used for installing a power semiconductor element 300, a second conductor portion 20b that is made of metal and forms one or more main terminals 2a for transmitting a current to the power semiconductor element 300, and one or more control terminals 2b for transmitting a switching control signal to the power semiconductor element 300, and a third conductor portion 20c that is made of metal and is provided at a tip portion of the control terminal 2b.

Abstract: A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member. The connecting member is formed in a curved shape.

Abstract: A heat exchanger includes an inner fin arranged in a refrigerant passage. The inner fin has side wall portions formed so as to extend in a predetermined direction and arranged parallel to each other. A gap formed between the side wall portions facing each other is a passage portion through which refrigerant flows. Each of the side wall portions has a plurality of openings arranged in the predetermined direction. An inclined surface inclined with respect to the predetermined direction is formed in a part of the side wall portion located between the openings adjacent to each other.

Abstract: A stacked heat exchanger includes: passage tubes stacked with each other to support a heat exchange object, a passage being defined in the passage tube for a heat medium to exchange heat with the heat exchange object; and a pipe connected to one of the passage tubes located at one end in a stacking direction of the plurality of passage tubes. Each of the passage tubes has a protruding pipe portion protruding in the stacking direction and communicating with the adjacent passage tube in the stacking direction. The one of the passage tubes located at the one end in the stacking direction is an in/out passage tube. The pipe has a surface at one end in a longitudinal direction of the pipe, and the surface intersects the longitudinal direction of the pipe and is joined to the in/out passage tube.