Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Abstract: A heat exchanger is formed by stacking plates with each other. The heat exchanger includes a refrigerant receiving tank configured to receive a refrigerant, a refrigerant discharging tank configured to discharge the refrigerant that has heat-exchanged, and refrigerant passages in which heat exchange between the refrigerant and another fluid is performed. The refrigerant passages fluidly connect between the refrigerant receiving tank and the refrigerant discharging tank. The refrigerant receiving tank includes a swirl structure configured to generate a swirling component in a flow of the refrigerant in the refrigerant receiving tank.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: A heat exchanger includes a fin arranged in a first passage and a tubular tank portion formed so as to penetrate plate members stacked in a stacking direction. An inflow port is formed in a peripheral wall of the tank portion to allow a refrigerant to flow into the first passage. When the fin is arranged in a fin installation portion in the first passage, a passage reduction portion is formed at the inflow port and is narrower than a width of the fin installation portion in the stacking direction.

Abstract: An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor device 1 includes an element installation conductor 2 including a first conductor portion 20a that is made of metal and is used for installing a power semiconductor element 300, a second conductor portion 20b that is made of metal and forms one or more main terminals 2a for transmitting a current to the power semiconductor element 300, and one or more control terminals 2b for transmitting a switching control signal to the power semiconductor element 300, and a third conductor portion 20c that is made of metal and is provided at a tip portion of the control terminal 2b.

Abstract: A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member. The connecting member is formed in a curved shape.

Abstract: A heat exchanger includes an inner fin arranged in a refrigerant passage. The inner fin has side wall portions formed so as to extend in a predetermined direction and arranged parallel to each other. A gap formed between the side wall portions facing each other is a passage portion through which refrigerant flows. Each of the side wall portions has a plurality of openings arranged in the predetermined direction. An inclined surface inclined with respect to the predetermined direction is formed in a part of the side wall portion located between the openings adjacent to each other.

Abstract: A stacked heat exchanger includes: passage tubes stacked with each other to support a heat exchange object, a passage being defined in the passage tube for a heat medium to exchange heat with the heat exchange object; and a pipe connected to one of the passage tubes located at one end in a stacking direction of the plurality of passage tubes. Each of the passage tubes has a protruding pipe portion protruding in the stacking direction and communicating with the adjacent passage tube in the stacking direction. The one of the passage tubes located at the one end in the stacking direction is an in/out passage tube. The pipe has a surface at one end in a longitudinal direction of the pipe, and the surface intersects the longitudinal direction of the pipe and is joined to the in/out passage tube.

Abstract: A core part includes plural plates stacked with a gap therebetween so as to form plural refrigerant passages and plural cooling water passages. The refrigerant passages are communicated with each other in a stacking direction of the plates by a refrigerant inlet tank section and a refrigerant outlet tank section distanced from each other. A refrigerant inlet and a refrigerant outlet communicate with the refrigerant inlet tank section and the refrigerant outlet tank section, respectively, and are provided at one end of the core part in the stacking direction. The refrigerant inlet and the refrigerant inlet tank section are communicated with each other by a refrigerant inlet passage. A distance between a center of the refrigerant outlet tank section and a center of the refrigerant outlet is shorter than a distance between a center of the refrigerant inlet tank section and a center of the refrigerant inlet.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Abstract: A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member.

Abstract: A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

Abstract: The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: A stacked heat exchanger includes: passage tubes stacked with each other to support a heat exchange object, a passage being defined in the passage tube for a heat medium to exchange heat with the heat exchange object; and a pipe connected to one of the passage tubes located at one end in a stacking direction of the plurality of passage tubes. Each of the passage tubes has a protruding pipe portion protruding in the stacking direction and communicating with the adjacent passage tube in the stacking direction. The one of the passage tubes located at the one end in the stacking direction is an in/out passage tube. The pipe has a surface at one end in a longitudinal direction of the pipe, and the surface intersects the longitudinal direction of the pipe and is joined to the in/out passage tube.

Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A power converter device includes a double-sided electrode module in which an electrical wiring board and a power semiconductor element are molded with a resin material. The power converter device also includes a heat dissipating base disposed on both sides of the double-sided electrode module and directly contacting cooling medium. The power converter device also includes a module fixture which presses the heat dissipating base in a state of contact with the heat dissipating base. The module fixture is configured to support a circuit board.