Abstract: A core part includes plural plates stacked with a gap therebetween so as to form plural refrigerant passages and plural cooling water passages. The refrigerant passages are communicated with each other in a stacking direction of the plates by a refrigerant inlet tank section and a refrigerant outlet tank section distanced from each other. A refrigerant inlet and a refrigerant outlet communicate with the refrigerant inlet tank section and the refrigerant outlet tank section, respectively, and are provided at one end of the core part in the stacking direction. The refrigerant inlet and the refrigerant inlet tank section are communicated with each other by a refrigerant inlet passage. A distance between a center of the refrigerant outlet tank section and a center of the refrigerant outlet is shorter than a distance between a center of the refrigerant inlet tank section and a center of the refrigerant inlet.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Abstract: A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member.

Abstract: A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

Abstract: The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: A stacked heat exchanger includes: passage tubes stacked with each other to support a heat exchange object, a passage being defined in the passage tube for a heat medium to exchange heat with the heat exchange object; and a pipe connected to one of the passage tubes located at one end in a stacking direction of the plurality of passage tubes. Each of the passage tubes has a protruding pipe portion protruding in the stacking direction and communicating with the adjacent passage tube in the stacking direction. The one of the passage tubes located at the one end in the stacking direction is an in/out passage tube. The pipe has a surface at one end in a longitudinal direction of the pipe, and the surface intersects the longitudinal direction of the pipe and is joined to the in/out passage tube.

Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A power converter device includes a double-sided electrode module in which an electrical wiring board and a power semiconductor element are molded with a resin material. The power converter device also includes a heat dissipating base disposed on both sides of the double-sided electrode module and directly contacting cooling medium. The power converter device also includes a module fixture which presses the heat dissipating base in a state of contact with the heat dissipating base. The module fixture is configured to support a circuit board.

Abstract: The present invention aims to suppress a coolant from bypassing a non-cooling unit without lowering the productivity. The power converter according to the present invention includes: a power semiconductor module; and a flow path forming body having a flow path in which the power semiconductor module is disposed and an opening which is connected with the flow path, wherein the power semiconductor module includes a first fin formed on one surface and a second fin formed on another surface which faces the one surface so as to sandwich the semiconductor element, the flow path forming body has a first coolant control unit and a second coolant control unit which are arranged so as to sandwich the first fin, the first coolant control unit and the second coolant control unit are formed to be overlapped with a region of the power semiconductor module where the first fin is not formed, and a first flow path is formed along the first coolant control unit and the second coolant control unit.

Abstract: Reliability of a power converter is improved while suppressing an increase in size and an increase in cost of the power converter. A power converter according to the present invention includes a power semiconductor module and a flow path forming body which contains the power semiconductor module and forms a flow path through which a refrigerant flows. In the flow path forming body, a first opening which communicates one surface of the flow path forming body with the flow path is formed, and in the power semiconductor module, a first sealing surface which is formed along an insertion direction of the power semiconductor module into the flow path and faces the flow path forming body and a second sealing surface which is formed along the insertion direction and faces the flow path forming body are formed.

Abstract: A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

Abstract: An actuator mounting structure of a variable compression ratio internal combustion engine includes: a variable compression ratio mechanism arranged to vary an engine compression ratio in accordance with a rotational position of a control shaft; an actuator arranged to drivingly rotate the control shaft, the actuator being fixed on an actuator mounting portion provided to a side wall of a main body of the engine by using a plurality of fixing bolts, and a rigidity improvement section arranged to improve a mounting rigidity of the actuator to the actuator mounting portion, and which is provided within an inter-bolt distance between two bolts of the plurality of the fixing bolts, which are located on the both sides in a direction of a crank shaft.

Abstract: An object of the present invention is to provide a power semiconductor module that can secure a satisfactory cooling without expanding the size of a case component. In the power semiconductor module according to the present invention, a frame case includes a front surface, a back surface, and a pair of side surfaces and formed with an opening part in at least one of the front surface and the back surface. A metal base is inserted into the opening part of the frame case. A frame case is provided with a joining part FW to which the peripheral part of the metal base and the peripheral part of the opening part of the frame case are joined. A first concaved part and a second concaved part are formed respectively in each of a pair of side surfaces of the frame case.

Abstract: A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

Abstract: A power module includes a base plate, first, second, and third semiconductor chips. At least one of a third edge or fourth edge of the first semiconductor chip is disposed adjacent to a side end of the base plate. Among a half of a distance from a first edge of the first semiconductor chip to one edge of the second semiconductor chip, a half of a distance from a second edge of the first semiconductor chip to one edge of the third semiconductor chip, and a distance from the third edge or fourth edge of the first semiconductor chip disposed adjacent to the side end of the base plate to the side end of the base plate, a length of a solder fillet formed on the edge of the first semiconductor chip at the shortest distance is formed in the shortest length.

Abstract: A power module includes a base plate, first, second, and third semiconductor chips. At least one of a third edge or fourth edge of the first semiconductor chip is disposed adjacent to a side end of the base plate. Among a half of a distance from a first edge of the first semiconductor chip to one edge of the second semiconductor chip, a half of a distance from a second edge of the first semiconductor chip to one edge of the third semiconductor chip, and a distance from the third edge or fourth edge of the first semiconductor chip disposed adjacent to the side end of the base plate to the side end of the base plate, a length of a solder fillet formed on the edge of the first semiconductor chip at the shortest distance is formed in the shortest length.

Abstract: The present invention aims to suppress a coolant from bypassing a non-cooling unit without lowering the productivity. The power converter according to the present invention includes: a power semiconductor module; and a flow path forming body having a flow path in which the power semiconductor module is disposed and an opening which is connected with the flow path, wherein the power semiconductor module includes a first fin formed on one surface and a second fin formed on another surface which faces the one surface so as to sandwich the semiconductor element, the flow path forming body has a first coolant control unit and a second coolant control unit which are arranged so as to sandwich the first fin, the first coolant control unit and the second coolant control unit are formed to be overlapped with a region of the power semiconductor module where the first fin is not formed, and a first flow path is formed along the first coolant control unit and the second coolant control unit.