Abstract: A connector device according to one or more embodiments includes a male connector including multiple male contact pieces, and a male contact piece retention portion, and a female connector including multiple female contact pieces, and a female contact piece retention portion. The male contact piece retention portion has multiple concentrically formed convex portions. The multiple male contact pieces are mounted on an outer circumferential wall of the convex portions, and arranged concentrically, with a tip end thereof being inclined toward the center of the convex portions. The female contact piece retention portion has concentrically formed multiple concave portions. The multiple female contact pieces are mounted on an inner circumferential wall of the concave portions, and arranged concentrically, with a base end thereof being inclined toward the center of the concave portions. The convex portion and the concave portion are brought into contact and tightly fitted with one another.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

Abstract: An input device includes a fixed electrode, first and second movable electrodes, a first elastic member having a portion and being configured to deform so as to displace the portion of the first elastic member in accordance with a movement of the first movable electrode, a second elastic member having a portion and being configured to deform so as to displace the portion of the second elastic member in accordance with a movement of the second movable electrode, and a terminal configured to output a signal corresponding to a change in a capacitance between the first and second movable electrodes. The input device is responsible to various manipulations while not preventing a click feeling from being generated.

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.

Abstract: In one exemplary embodiment, there is provided an etching method. The method includes (a) preparing a substrate, the substrate comprising a silicon-containing film and a mask, the silicon-containing film including a recess, the mask being provided on the silicon-containing film and including an opening that exposes the recess; (b) forming a carbon-containing film on a side wall of the silicon-containing film, the side wall defining the recess; and (c) by using a plasma generated from a processing gas, forming a protective film containing tungsten on the carbon-containing film and etching the silicon-containing film in the recess, the processing gas including a fluorine-containing gas and a tungsten-containing gas.

Abstract: A multilayer ceramic capacitor includes a multilayer body including dielectric layers and internal electrode layers alternately laminated therein, base electrode layers respectively provided on both end surfaces of the multilayer body in a length direction intersecting a lamination direction, and each connected to the internal electrode layers and each including glass and copper, and plated layers respectively provided on an outer side of the base electrode layers. A protective layer including sulfur is provided between the glass included in the base electrode layers and the plated layers.

Abstract: A semiconductor device of an embodiment includes a substrate, a first electrode, a second electrode, the first electrode provided between the substrate and the second electrode, the oxide semiconductor layer in contact with the first electrode, an oxide semiconductor layer between the first electrode and the second electrode, the oxide semiconductor layer contains Zn and at least one first element selected from In, Ga, Si, Al, and Sn; a conductive layer between the oxide semiconductor layer and the second electrode, the conductive layer in contact with the second electrode, the conductive layer contains O and at least one second element selected from the group consisting of In, Ga, Si, Al, Sn, Zn, and Ti, a gate electrode; and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

Abstract: Provided is a signal processing device for X-ray analysis capable of suppressing effects of increased background due to pile-up signals and suppressing the dead time from lengthening. A signal processing device for X-ray analysis includes a differentiating circuit configured to convert a plurality of staircase wave signals detected by the X-ray detector into differential wave signals, a digital filter configured to convert the differential wave signals into trapezoidal wave signals or triangular wave digital signals, and a peak detection unit configured to discriminate and count a peak value extracted from a peak portion of the trapezoidal wave signal or the triangular wave signal. The peak detection unit is set such that a rising threshold Tu to be compared with a signal of the rising-side sloped line segment and a falling threshold Td to be compared with a signal of the falling-side sloped line segment in the trapezoidal signal or the triangular wave signal have a relation of Tu>Td.

Abstract: A multilayer ceramic capacitor includes a second alloy portion including one metal element provided in a greatest amount among metal elements of an internal electrode layer, and one or more metal elements among a metal group including Sn, In, Ga, Zn, Bi, Pb, Cu, Ag, Pd, Pt, Ph, Ir, Ru, Os, Fe, V, and Y is provided between a second dielectric ceramic layer and a first internal electrode layer, and between a second dielectric ceramic layer and a second internal electrode layer, respectively.

Abstract: Provided is an X-ray fluorescence analyzer capable of performing an analysis under more favorable conditions depending on an analysis target. The X-ray fluorescence analyzer includes a detector 30, preamplifiers 41A, 41B configured to amplify a detection signal from the detector into a staircase wave signal at different signal amplification factors GA, GB, a differentiating circuit 42 configured to convert the staircase wave signal into a differential wave signal, an A/D converter 43 configured to convert the differential wave digital signal to a digital signal, a signal processing unit 160 configured to detect a peak value from the digital signal, discriminate and count the peak value, and generate a histogram, and an input unit 51 configured to set the energy range of the fluorescent X-rays to be analyzed. Any one of the preamplifiers is automatically selected based on maximum energy in the set energy range.

Abstract: A signal determination device includes an identification unit which identifies a reference signal that serves as a reference to identify an abnormal signal among a plurality of signals detected in the communication network, a time interval estimation unit which estimates a time interval of signals that are to be input in series to the communication network based on detection timing of the plurality of signals detected in the communication network, a timing estimation unit which estimates timing at which a plurality of signals is to be detected in the communication network after the reference signal, and a determination unit which determines whether each of the plurality of signals detected in the communication network after the reference signal is a normal signal based on the timing estimated by the timing estimation unit and detection timing of the plurality of signals detected in the communication network after the reference signal.

Abstract: A resin composition including a liquid crystalline polymer and a fluororesin, wherein the fluororesin has a peak area percentage of a CF3 groups content relative to a CF2 groups content in the fluororesin of 0.05% or more, as determined by the following [Method for measuring CF3 groups content]: the CF3 groups content relative to the CF2 groups content in the fluororesin is calculated as an area percentage from a peak area ICF3 corresponding to the CF3 groups and a peak area ICF2 corresponding to the CF2 groups measured by 19F solid-state NMR, and is determined by the following formula (f1): CF3 groups content (%)={(ICF3/3)/(ICF2/2)}×100 (f1).

Abstract: An LED array includes: a substrate having a depressing-projecting structure formed on a surface of the substrate; a planarization layer formed on the depressing-projecting structure; a plurality of micro LED elements each of which is formed on the planarization layer; and a stray light attenuating groove formed between a pair of adjacent micro LED elements among the plurality of micro LED elements, and extending from toward the pair of micro LED elements to toward the depressing-projecting structure at least part way of the planarization layer.

Abstract: In one embodiment, a semiconductor storage device includes a lower electrode layer, a lower insulator, an upper electrode layer and an upper insulator along a first direction. The device further includes a first insulator provided on a side of a second direction of the upper electrode layer, and a second insulator provided between the upper electrode layer and the lower/upper/first insulator. The device further includes a charge storage layer, a third insulator and a semiconductor layer sequentially provided on a side of the second direction of the first insulator. A side face of the first insulator on a side of the upper electrode layer has a convex shape, the charge storage layer includes a first portion having a first thickness, and a second portion having a second thickness less than the first thickness, and the first portion is in contact with the first insulator.

Abstract: An input device includes a detection surface configured to be operated by an operation body, a first fixed electrode, a movable electrode, first and second terminals configured to be connected to an outside of the input device, and a direct-connection line electrically connecting the movable electrode to the second terminal via no capacitor. The movable electrode has a lower surface facing an upper surface of the first fixed electrode to be capacitively coupled to the first fixed electrode. The movable contact is displaceable to approach the first fixed electrode in response to a pressing of the detection surface by the operation body. The first terminal is configured to output, to the outside of the input device, a first electric signal containing a change in a capacitance between the first fixed electrode and the movable electrode.

Abstract: A current sensor has: a magneto-resistive effect element which is arranged near a current line, to which a signal magnetic field is applied, the signal magnetic field being is induced by a current that flows in the current line, and which generates a magneto-resistive change in accordance with a change of the signal magnetic field; cancelling magnetic field generating means that is provided near the magneto-resistive effect element and that generates a cancelling magnetic field that cancels the signal magnetic field; a first soft magnetic body that is provided between the magneto-resistive effect element and the current line; and a pair of second soft magnetic bodies that are provided on both sides of the magneto-resistive effect element with regard to a magnetization detecting direction of the magneto-resistive effect element.

Abstract: A magnetic sensor device includes a first detection circuit that generates a first detection signal, a coil through which a feedback current is passed to generate a cancellation magnetic field, a second detection circuit that generates a second detection signal having a correspondence with a value of the feedback current, and a control circuit that controls the feedback current. In a closed-loop operation, the control circuit controls the feedback current so that the first detection signal has a constant value. In an open-loop operation, the control circuit maintains the feedback current at a constant value.

Abstract: A manufacturing method according to one aspect includes performing a first process of refining crystal grains of the metal member, performing a second process of releasing residual stress of the metal member after the first process, and performing a third process of applying residual stress to the metal member after the second process.

Abstract: A multilayer ceramic capacitor includes a multilayer body including an inner layer portion including dielectric layers and internal electrode layers alternately laminated therein, two outer layer portions respectively provided on both sides of the inner layer portion in a lamination direction, and two side gap portions respectively provided on both side surfaces of the inner layer portion and the outer layer portions, in a width direction intersecting the lamination direction, and external electrodes respectively provided on both end surfaces of the multilayer body in a length direction intersecting the lamination direction and the width direction, and each connected to the internal electrode layers, wherein nickel and magnesium are segregated between the side gap portions and the outer layer portions.