Abstract: A magnetic sensor system includes a magnetic field generator and a magnetic sensor. The magnetic sensor includes a plurality of MR elements. The plurality of MR elements are each configured so that a bias magnetic field in a second direction orthogonal to a first direction is applied to a free layer, and to change in resistance with a strength of a magnetic field component. A maximum strength of the magnetic field component applied to each of the MR elements is greater than or equal to 1.2 times the strength of a bias magnetic field.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: Please delete the current abstract and add the following new paragraph as the abstract. A head cooler improves sleep quality without overcooling the head of a sleeping person. A head cooler includes a main body, a pillow, and a connector. The main body sends out a liquid for circulation between the main body and the pillow through the connector. The main body includes a temperature adjuster that adjusts a temperature of the liquid, a pump that sends out the liquid toward the pillow, and a controller that controls the temperature adjuster and the pump to adjust a temperature of the pillow at a first target temperature of 22 to 24° C. until an elapsed time from start of cooling reaches a target time of 200 to 250 minutes.

Abstract: A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

Abstract: The current sensor comprises: a magnetic detecting device that is arranged in the vicinity of a conductor, to which a magnetic field to be measured induced by a current flowing through the conductor is applied, and that changes an electrical resistance in response to a change in the magnetic field to be measured; two coils that generate a canceling magnetic field to cancel the magnetic field to be measured and that are arranged in the vicinity of the magnetic detecting device; a shunt resistor, that is connected in series between the two coils, for detecting a current flowing through the coils; a first differential amplifier that amplifies the output signal of the magnetic detecting device and that supplies the current to induce the canceling magnetic field to the coils; and a second differential amplifier that amplifies the voltage across the shunt resistor and that outputs a measured voltage proportional to the current flowing through the conductor.

Abstract: An input device includes a pressure sensitive unit and a sensing unit. The pressure sensitive unit includes a clicking part and a pressure sensor. The clicking part has a press surface and is configured to provide a sense of click to an operation body which applies pushing force to the press surface. The pressure sensor is disposed on an opposite side of the clicking part from the press surface. The sensing unit is aligned with the pressure sensitive unit when viewed from a front side of the press surface and is configured to sense that the operation body comes in proximity to or comes into contact with a second detection surface.

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: In a multilayer ceramic capacitor includes, in a plane including a center portion in a length direction, and a stacking direction and a width direction of a first dielectric ceramic layer, where a thickness at a center portion in the stacking direction is T1, a thickness at an end of the first dielectric ceramic layer in the width direction is T2, and respective thicknesses between an end of a first internal electrode layer in the length direction not connected to a second external electrode, and the second external electrode, and between an end of the second internal electrode layer in the length direction not connected to the first external electrode, and the first external electrode is T3, a difference in thickness between T1 and T2 is within about 10% of T1, and a thickness of T3 is greater than T1 and T2 and a difference thereof is about 10% or more of T1 and T2.

Abstract: A magnetic sensor device includes a first detection circuit that generates a first detection signal, a coil through which a feedback current is passed to generate a cancellation magnetic field, a second detection circuit that generates a second detection signal having a correspondence with a value of the feedback current, and a control circuit that controls the feedback current. In a closed-loop operation, the control circuit controls the feedback current so that the first detection signal has a constant value. In an open-loop operation, the control circuit maintains the feedback current at a constant value.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: The current sensor comprises: a magnetic detecting device that is arranged in the vicinity of a conductor, to which a magnetic field to be measured induced by a current flowing through the conductor is applied, and that changes an electrical resistance in response to a change in the magnetic field to be measured; two coils that generate a canceling magnetic field to cancel the magnetic field to be measured and that are arranged in the vicinity of the magnetic detecting device; a shunt resistor, that is connected in series between the two coils, for detecting a current flowing through the coils; a first differential amplifier that amplifies the output signal of the magnetic detecting device and that supplies the current to induce the canceling magnetic field to the coils; and a second differential amplifier that amplifies the voltage across the shunt resistor and that outputs a measured voltage proportional to the current flowing through the conductor.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A support unit and a collimator are relatively rotated about the axis of rotation by a rotation driving device. The collimator has a blocking region that blocks X-rays and a transmission region that allows X-rays to pass therethrough. The transmission region has a vertex positioned on the axis of rotation, and the circumferential length of the transmission region increases proportionally as it advances outward from the vertex. A sample supported by the support unit is irradiated with X-rays by an X-ray source through the transmission region of the collimator, and the fluorescent X-rays from the sample are detected by the detector. The analysis of a composition of a sample is performed based on the fluorescent X-rays detected by the detector.

Abstract: An input device includes a detection surface configured to be operated by an operation body, a first fixed electrode, a movable electrode, first and second terminals configured to be connected to an outside of the input device, and a direct-connection line electrically connecting the movable electrode to the second terminal via no capacitor. The movable electrode has a lower surface facing an upper surface of the first fixed electrode to be capacitively coupled to the first fixed electrode. The movable contact is displaceable to approach the first fixed electrode in response to a pressing of the detection surface by the operation body. The first terminal is configured to output, to the outside of the input device, a first electric signal containing a change in a capacitance between the first fixed electrode and the movable electrode.

Abstract: In a multilayer ceramic capacitor, a first segregation defined by at least one metal element selected from a group consisting of Mg, Mn, and Si is present at each of an end in a length direction of a first internal electrode layer not connected to a second external electrode and an end in a length direction of a second internal electrode layer not connected to a first external electrode. A second segregation defined by at least one metal element selected from a group consisting of Mg, Mn, and Si is present at each of an end of the first internal electrode layer in a width direction and an end of the second internal electrode layer in the width direction.

Abstract: A multilayer ceramic capacitor includes, in at least one of a region between an end of a first internal electrode layer which is not connected to a second external electrode and the second external electrode, and a region between an end of a second internal electrode layer which is not connected to a first external electrode and the first external electrode, in a length direction, a defect portion provided on a plane including a stacking direction and a width direction, such that the defect portion is located between the first dielectric ceramic layers in the stacking direction and is located between the second dielectric ceramic layer and the third dielectric ceramic layer in the width direction.

Abstract: A current sensor has: a magneto-resistive effect element which is arranged near a current line, to which a signal magnetic field is applied, the signal magnetic field being is induced by a current that flows in the current line, and which generates a magneto-resistive change in accordance with a change of the signal magnetic field; cancelling magnetic field generating means that is provided near the magneto-resistive effect element and that generates a cancelling magnetic field that cancels the signal magnetic field; a first soft magnetic body that is provided between the magneto-resistive effect element and the current line; and a pair of second soft magnetic bodies that are provided on both sides of the magneto-resistive effect element with regard to a magnetization detecting direction of the magneto-resistive effect element.