Abstract: A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

Abstract: A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

Abstract: According to one embodiment, a semiconductor memory device includes: a first semiconductor layer; first and second insulating layers in contact with the first semiconductor layer; a second semiconductor layer in contact with the first insulating layer; a third semiconductor layer in contact with the second insulating layer; a first conductor; a third insulating layer in contact with the first conductor; a fourth insulating layer provided between the second semiconductor layer and the third insulating layer; a first charge storage layer provided between the second semiconductor layer and the fourth insulating layer; and a fifth insulating layer provided between the second semiconductor layer and the first charge storage layer. The second semiconductor layer, the first conductor, the third to fifth insulating layers, and the first charge storage layer function as a first memory cell.

Abstract: A manufacturing method according to one aspect includes performing a first process of refining crystal grains of the metal member, performing a second process of releasing residual stress of the metal member after the first process, and performing a third process of applying residual stress to the metal member after the second process.

Abstract: A magnetic sensor device includes a first detection circuit that generates a first detection signal, a coil through which a feedback current is passed to generate a cancellation magnetic field, a second detection circuit that generates a second detection signal having a correspondence with a value of the feedback current, and a control circuit that controls the feedback current. In a closed-loop operation, the control circuit controls the feedback current so that the first detection signal has a constant value. In an open-loop operation, the control circuit maintains the feedback current at a constant value.

Abstract: An electronic timepiece, including: a motor having a rotor and at least two coils, the rotor being configured to rotate to a plurality of prescribed positions; and a driving processor for driving the motor, the driving processor being configured to: generate a detection pulse for detecting whether or not the rotor has rotated; cause the generated detection pulse to be applied to at least one of the at least two coils; receive a signal indicating a detected value of current flowing in the at least one of the at least two coils that is generated in response to the detection pulse outputted to the at least one of the at least two coils; and determine whether or not the rotor has rotated to one of the plurality of prescribed positions on the basis of the detected value of current.

Abstract: An electronic device includes: a date indicator that includes a letter part and a non-letter part different from the letter part, the non-letter part being a through hole; and a solar battery disposed below the date indicator.

Abstract: A multilayer ceramic capacitor includes a second alloy portion including one metal element provided in a greatest amount among metal elements of an internal electrode layer, and one or more metal elements among a metal group including Sn, In, Ga, Zn, Bi, Pb, Cu, Ag, Pd, Pt, Ph, Ir, Ru, Os, Fe, V, and Y is provided between a second dielectric ceramic layer and a first internal electrode layer, and between a second dielectric ceramic layer and a second internal electrode layer, respectively.

Abstract: A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.

Abstract: A magnetic sensor comprises a magnetoresistive effect element including a first side surface and a second side surface facing in opposite directions along a first axis and a first end surface and a second end surface facing in opposite directions along a second axis substantially orthogonal to the first axis. The sensor has a sensitivity axis extending in a direction of the first axis, a first yoke unit provided adjacent to the first side surface of the magnetoresistive effect element, and a first bias magnetic field generation unit provided adjacent to the first end surface of the magnetoresistive effect element. The first bias magnetic field generation unit is provided to be capable of applying a bias magnetic field on the magnetoresistive effect element and the first yoke unit.

Abstract: A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that applies a bias magnetic field to free layer 24. The film thickness of the magnet film is 15 nm or more and 50 nm or less. The relationship of 0.7?TC_HM/TC_FL?1.05 is satisfied, where TC_HM is Curie temperature of the magnet film, and TC_FL is Curie temperature of the free layer.

Abstract: An app migration system including at least one processor which places an app in one of an inside and an outside of a space joined by at least one user in a user group in which information is shareable; sets, for the app, a permission corresponding to a placement location of the app; migrates the app in one of a route between a public space and a private space and a route between the inside and the outside of the space; and sets, for the migrated app, a permission corresponding to a migration destination of the app.

Abstract: An air bag to be mounted in a cargo container for facilitating discharge of powder granular material from a liner filled with the powder granular material, the air bag including a synthetic resin film bag that assumes a triangle or trapezoid shape in a state where the bag has a flat form with no air injected. A gusset is formed in a base part of the triangle or in a lower base part of the trapezoid by folding the synthetic resin film inward. Flexible reinforcing covers having a triangle or trapezoid shape in accordance with the triangle or trapezoid shape of the bag are laminated respectively on one surface and the other surface of the bag. A short air outlet tube, as well as an air inlet tube, is connected to one side part of the triangle or one leg part of the trapezoid of the bag.

Abstract: A method of manufacturing a stress reference piece includes the following steps (1) to (3): (1) preparing an aluminum alloy member containing an element that generates a ? phase; (2) performing a shot peening treatment on the aluminum alloy member; and (3) performing a tempering treatment on the aluminum alloy member after the shot peening treatment, the tempering treatment accelerating generation of the ? phase.

Abstract: A magnetic field detection device of an embodiment of the disclosure includes: a first magnetic field detection element having a first resistance value increasing upon application of a first magnetic field in a first direction and decreasing upon application of a second magnetic field in a second direction; and a second magnetic field detection element having a second resistance value decreasing upon application of the first magnetic field and increasing upon application of the second magnetic field. The first and second magnetic field detection elements each include first and second magneto-resistive effect films coupled in series. The first magneto-resistive effect film has a first major-axis direction inclined at a first inclination angle relative to the first direction. The second magneto-resistive effect film has a second major-axis direction inclined at a second inclination angle relative to the first direction. The magnetic field detection device satisfies conditional expressions (1) and (2).

Abstract: A magnetic sensor comprises a magnetoresistive effect element including a first side surface and a second side surface facing in opposite directions along a first axis and a first end surface and a second end surface facing in opposite directions along a second axis substantially orthogonal to the first axis. The sensor has a sensitivity axis extending in a direction of the first axis, a first yoke unit provided adjacent to the first side surface of the magnetoresistive effect element, and a first bias magnetic field generation unit provided adjacent to the first end surface of the magnetoresistive effect element. The first bias magnetic field generation unit is provided to be capable of applying a bias magnetic field on the magnetoresistive effect element and the first yoke unit.

Abstract: In a multilayer ceramic capacitor, an intersection of an interface is defined by a second dielectric ceramic layer, a first internal electrode layer or a second internal electrode layer, and a third dielectric ceramic layer, on a plane including a length direction and a width direction, the second dielectric ceramic layer and the third dielectric ceramic layer include a near intersection region at or near the intersection, and an average particle size of dielectric particles in the near intersection region is smaller than average particle sizes of dielectric particles in the first dielectric ceramic layer, the second dielectric ceramic layer, and the third dielectric ceramic layer.

Abstract: A short-circuit generator is a generator in which stator slots provided with windings of a stator placed therein each have a depth in a radial direction perpendicular to a rotor central axis whose ratio divided by a width of the stator slot in a direction perpendicular both to the radial direction and a direction of the rotor central axis, is less than three. A rotor includes: a field winding placed in each of rotor slots; a metallic damper bar placed in each of the rotor slots on an outer periphery side of the field winding; and a metallic wedge placed in each of the rotor slots on an outer periphery side of the damper bar and connected to the damper bar. A damper-bar height that is a height of the damper bar is less than a wedge height that is a height of the wedge in the radial direction.

Abstract: Provided is a resin for nanoimprinting, which is capable of preventing removal of a transfer-receiving resin from a substrate when a mold is separated during nanoimprinting, and which is also capable of transferring a pattern on a mold to a transfer-receiving resin with high accuracy during thermal nanoimprinting, while improving the throughput. A resin for nanoimprinting, which is represented by formula (1). (In the formula, each of R1-R5 independently represents —H or —OH, and at least one of the R1-R5 moieties represents —OH; R6 represents a linear, branched or cyclic alkyl group having 1-20 carbon atoms, an aryl group having 6-20 carbon atoms or an aralkyl group having 7-20 carbon atoms; X represents an amide or an ester; Y may be absent, or represents an amide or an ester; P represents an integer of 1-10; and each of m and n represents an integer of 1 or more.

Abstract: A magnetic sensor device includes a magnetic field converter that receives an input magnetic field input along a first direction and outputs an output magnetic field along a second direction, which is orthogonal to the first direction. A magnetic field detector is provided at a position where the output magnetic field can be applied. A magnetic shield that blocks an external magnetic field along the second direction. is provided. The magnetic field converter has a shape in which the length in a third direction, which is orthogonal to both the first direction and the second direction, is longer than the length in the second direction, when viewed along the first direction. The magnetic shield is provided at a position overlapping with the magnetic field converter and the magnetic field detector, when viewed along the first direction.