Abstract: A projection control apparatus that controls projection using a plurality of projection devices that project optical images onto a projection plane. The projection control apparatus obtains a projected area of each of the plurality of projection devices on the basis of an image obtained by capturing the projection plane. The projection control apparatus then executes a first adjustment process of adjusting the projected area of each projection device so as to cause the projected areas of other projection devices, among the plurality of projection devices, that are not a reference projection device, to correspond to the projected area of the reference projection device. The projection control apparatus cancels geometric correction applied in the other projection devices before starting the first adjustment process and does not cancel geometric correction applied in the reference projection device before starting the first adjustment process.

Abstract: A distance measuring device includes a light emitting unit that outputs a measurement light, a first polarization state control unit that controls a polarization state of the measurement light output from the light emitting unit, a second polarization state control unit that controls the polarization state of the measurement light of which a polarization state is controlled by the first polarization state control unit, and an optical path switching element that selects an emission direction of the measurement light of which a polarization state is controlled by the second polarization state control unit, in which the second polarization state control unit controls the polarization state of the measurement light so that the measurement lights are emitted from the optical path switching element in a plurality of the emission directions, and the optical path switching element receives a reflected light obtained by reflecting the emitted measurement light by an object.

Abstract: A projection control apparatus that controls a plurality of projection apparatuses including a first projection apparatus configured to project a first projected image and a second projection apparatus configured to project a second projected image, includes an acquisition unit configured to acquire a common area in which the first projected image and the second projected image are deformable, and a control unit configured to cause at least one of the plurality of projection apparatuses to project an image representing the common area.

Abstract: A control apparatus configured to control a plurality of projection apparatuses and an imaging apparatus includes a projection control unit configured to control the plurality of projection apparatuses, an imaging control unit configured to control the imaging apparatus, and an image processing unit configured to process a captured image, wherein the projection control unit is configured to project a marker image by at least one of the plurality of projection apparatuses, wherein the imaging control unit is configured to capture at least part of the marker image by the imaging apparatus, wherein the image processing unit is configured to detect at least part of the marker image included in the captured image, and wherein the projection control unit or the imaging control unit is configured to, if a size of the marker image is smaller than a predetermined value, control the plurality of projection apparatuses or the imaging apparatus.

Abstract: A defect observation method for observing a defect on a sample detected by another inspection device with a scanning electron microscope including the steps of: optically detecting the defect using the position information for the defect: illuminating the sample including the defect with an illumination intensity pattern having periodic intensity variation in two dimensions by irradiating a plurality of illumination light beams onto the surface of the sample while phase modulating the light beams in a single direction and successively moving the light beams in small movements in a direction different from the single direction, imaging the surface of the sample that is illuminated by the illumination intensity pattern having periodic intensity variation in two dimensions and includes the defect detected by the other inspection device, and detecting the defect detected by the other inspection device from the image obtained through the imaging of the surface of the sample.

Abstract: A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

Abstract: A projection control apparatus that controls projection using a plurality of projection devices that project optical images onto a projection plane. The projection control apparatus obtains a projected area of each of the plurality of projection devices on the basis of an image obtained by capturing the projection plane. The projection control apparatus then executes a first adjustment process of adjusting the projected area of each projection device so as to cause the projected areas of other projection devices, among the plurality of projection devices, that are not a reference projection device, to correspond to the projected area of the reference projection device. The projection control apparatus cancels geometric correction applied in the other projection devices before starting the first adjustment process and does not cancel geometric correction applied in the reference projection device before starting the first adjustment process.

Abstract: A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the

Abstract: In a defect inspection device that irradiates a surface of a sample or a surface of a pattern chip with an illumination light shaped to extend in a first direction, and detects a scattered light generated from the surface of the sample or the surface of the pattern chip by the illumination light to detect a defect on the surface of the sample, the pattern chip has a dot pattern area in which multiple dots are arrayed in multiple rows and multiple columns, a minimum interval between the dots corresponding to the lines aligned in the first direction among the multiple dots arrayed in the dot pattern area in a second direction orthogonal to the first direction is smaller than a width of the illumination light, and a minimum interval between the multiple dots arrayed in the dot pattern area is larger than a resolution of the detection optical system.

Abstract: A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.

Abstract: A defect inspection method includes irradiating a sample with laser, condensing and detecting scattered light beams, processing signals that detectors have detected and extracting a defect on a sample surface, and outputting information on the extracted defect. Detection of the scattered light beams is performed by condensing the scattered light beams, adjusting polarization directions of the condensed scattered light beams, mutually separating the light beams depending on the polarization direction, and detecting the light beams by a plurality of detectors. Extraction of the defect is performed by processing output signals from the detectors by multiplying each detection signal by a gain, discriminating between a noise and the defect, and detecting the defect.

Abstract: Detection can be performed even for a thick inspection target object through time delay integration without degradation of spatial resolution. There is provided an X-ray inspection device configured to include: an X-ray source that generates X-rays; a transport unit that performs transporting a sample; a detecting unit that has a time delay integration type detector which detects X-rays generated by the X-ray source and transmitted through the sample transported by the transport unit; and a defect determining unit that processes a signal obtained by detecting the X-rays transmitted through the sample by the time delay integration type detector of the detecting unit and determines a defect in the sample. The transport unit performs transporting the sample while causing the sample to rotate in synchronization with the transporting when the sample passes in front of the time delay integration type detector of the detecting unit.

Abstract: A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.

Abstract: A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.

Abstract: Disclosed are a method and an apparatus for observing defects by using an SEM, wherein, in order to observe defects on a wafer at high speed and high sensitivity, positional information of defects on a sample, which has been optically inspected and detected by other inspecting apparatus, and information of the conditions of the optical inspection having been performed by other inspecting apparatus are obtained, and optically detecting the defects on the sample placed on a table, on the basis of the thus obtained information, and on the basis of the detected positional information of the defect on the sample placed on the table, the positional information of the defect having been inspected and detected by other inspecting apparatus is corrected, then, the defects on the sample placed on the table are observed by the SEM using the thus corrected positional information of the defects.

Abstract: A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

Abstract: A method for reviewing a defect including a light capturing step that illuminates a sample with light under plural optical conditions, while varying only at least one of illumination conditions, sample conditions, or detection conditions, and detects plural lights scattering from the sample; a signal obtaining step that obtains plural signals based on the lights detected; and a processing step that discriminates a defect from noise according to a waveform characteristic quantity, an image characteristic quantity, or a value characteristic quantity created using the signals and derives the coordinates of defect.

Abstract: In optical dark field defect inspection, the present invention provides including: condensing laser emitted from a light source in a line shape; reflecting the laser, with a mirror; irradiating the reflected laser via an objective lens to a sample placed on a table from a vertical direction; condensing reflected scattered light from the sample with the objective lens; shielding diffraction light occurred from a periodical pattern formed on the sample, in the reflected scattered light from the sample and scattered light occurred from the mirror, with a spatial filter; receiving the reflected scattered light from the sample, not shielded with the spatial filter, with an imaging lens, and forming an image of the reflected scattered light; detecting the image of the reflected scattered light; and processing a detection signal obtained by detecting the image of the reflected scattered light and detecting a defect on the sample.

Abstract: A defect inspection method includes irradiating a sample with laser, condensing and detecting scattered light beams, processing signals that detectors have detected and extracting a defect on a sample surface, and outputting information on the extracted defect. Detection of the scattered light beams is performed by condensing the scattered light beams, adjusting polarization directions of the condensed scattered light beams, mutually separating the light beams depending on the polarization direction, and detecting the light beams by a plurality of detectors. Extraction of the defect is performed by processing output signals from the detectors by multiplying each detection signal by a gain, discriminating between a noise and the defect, and detecting the defect.

Abstract: To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same.