Patents by Inventor Yutaka Shionoiri

Yutaka Shionoiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20120293201
    Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.
    Type: Application
    Filed: May 11, 2012
    Publication date: November 22, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masashi Fujita, Yutaka Shionoiri, Kiyoshi Kato, Hidetomo Kobayashi
  • SEMICONDUCTOR DEVICE
    Publication number: 20120293203
    Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 22, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takuro OHMARU, Yutaka SHIONOIRI
  • DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT
    Publication number: 20120286268
    Abstract: An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.
    Type: Application
    Filed: July 26, 2012
    Publication date: November 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takanori MATSUZAKI, Yutaka SHIONOIRI
  • SEMICONDUCTOR DEVICE
    Publication number: 20120281469
    Abstract: Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.
    Type: Application
    Filed: April 30, 2012
    Publication date: November 8, 2012
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroyuki TOMATSU, Hidetomo KOBAYASHI, Yutaka SHIONOIRI
  • Semiconductor device and wireless communication system using the same
    Patent number: 8305216
    Abstract: Initialization of a semiconductor device can be efficiently performed, which transmits and receives data through wireless communication. The semiconductor device includes an antenna, a power source circuit, a circuit which uses a DC voltage generated by the power source circuit as a power source voltage, and a resistor. The antenna includes a pair of terminals and receives a wireless signal (a modulated carrier wave). The power source circuit includes a first terminal and a second terminal and generates a DC voltage between the first terminal and the second terminal by using a received wireless signal (the modulated carrier wave). The resistor is connected between the first terminal and the second terminal. In this manner, the semiconductor device and the wireless communication system can transmit and receive data accurately.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Yutaka Shionoiri, Hidetomo Kobayashi
  • SEMICONDUCTOR DEVICE
    Publication number: 20120273773
    Abstract: Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.
    Type: Application
    Filed: April 11, 2012
    Publication date: November 1, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshinori IEDA, Atsuo ISOBE, Yutaka SHIONOIRI, Tomoaki ATSUMI
  • PROGRAMMABLE LSI
    Publication number: 20120268164
    Abstract: A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.
    Type: Application
    Filed: April 3, 2012
    Publication date: October 25, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hidetomo KOBAYASHI, Masami ENDO, Yutaka SHIONOIRI, Hiroki DEMBO, Tatsuji NISHIJIMA, Kazuaki OHSHIMA, Seiichi YONEDA, Jun KOYAMA
  • LIGHT-EMITTING DEVICE, DISPLAY DEVICE, LIGHT-EMITTING SYSTEM, AND DISPLAY SYSTEM
    Publication number: 20120262432
    Abstract: A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 18, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Koichiro KAMATA, Yutaka SHIONOIRI, Shunpei YAMAZAKI
  • Semiconductor device
    Patent number: 8284579
    Abstract: The adverse effect of noise a constant voltage receives in a semiconductor device capable of data communication through wireless communication is suppressed. Further, communication is performed normally with a constant voltage with less noise even in the case where the amount of received power is large. The semiconductor device includes an input circuit for generating a DC voltage from an AC signal, a circuit for generating a constant voltage lower than the DC voltage, a circuit portion supplied with the constant voltage, a filter, and a feedback circuit for changing impedance with the constant voltage input from the circuit for generating a constant voltage, wherein the filter is electrically connected between the input circuit and the circuit for generating a constant voltage.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: October 9, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yutaka Shionoiri
  • Demodulation circuit and RFID tag including the demodulation circuit
    Patent number: 8258862
    Abstract: An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: September 4, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takanori Matsuzaki, Yutaka Shionoiri
  • Semiconductor device and driving method thereof
    Patent number: 8238476
    Abstract: The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kiyoshi Kato, Yutaka Shionoiri
  • Semiconductor device
    Patent number: 8237248
    Abstract: An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiaki Oikawa, Hironobu Shoji, Yutaka Shionoiri, Kiyoshi Kato, Masataka Nakada
  • SEMICONDUCTOR DEVICE
    Publication number: 20120195115
    Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.
    Type: Application
    Filed: January 24, 2012
    Publication date: August 2, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masashi Fujita, Yutaka Shionoiri, Hiroyuki Tomatsu, Hidetomo Kobayashi
  • Semiconductor device
    Patent number: 8232880
    Abstract: The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.
    Type: Grant
    Filed: March 9, 2007
    Date of Patent: July 31, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masato Ishii, Tomoaki Atsumi, Takeshi Osada, Takayuki Ikeda, Yoshiyuki Kurokawa, Yutaka Shionoiri
  • Semiconductor device and communication system using the semiconductor device
    Patent number: 8222735
    Abstract: With respect to a semiconductor device which communicates data by wireless communication, an object of the present invention is to improve sensitivity of an antenna and to protect a chip from noise without increasing the size of the device. A coiled antenna and a semiconductor integrated circuit which is electrically connected to the coiled antenna are included. The semiconductor integrated circuit is arranged so as to overlap with the coiled antenna. In this manner, arrangement of the coiled antenna and the semiconductor integrated circuit in the semiconductor device is devised, so that sensitivity of the antenna can be improved and power enough to operate the semiconductor integrated circuit can be obtained without increasing the size of the device.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: July 17, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yutaka Shionoiri
  • Logic circuit and semiconductor device
    Patent number: 8207756
    Abstract: In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×1019 (atoms/cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: June 26, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yutaka Shionoiri, Hidetomo Kobayashi
  • SENSE AMPLIFIER AND ELECTRONIC APPARATUS USING THE SAME
    Publication number: 20120133437
    Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.
    Type: Application
    Filed: February 7, 2012
    Publication date: May 31, 2012
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
  • SEMICONDUCTOR DEVICE
    Publication number: 20120112191
    Abstract: A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate.
    Type: Application
    Filed: October 11, 2011
    Publication date: May 10, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kiyoshi KATO, Yutaka SHIONOIRI, Shuhei NAGATSUKA, Yuto YAKUBO, Jun KOYAMA
  • Semiconductor device and method for manufacturing the same
    Patent number: 8148818
    Abstract: A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: April 3, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiaki Oikawa, Hironobu Shoji, Yutaka Shionoiri, Kiyoshi Kato, Masataka Nakada
  • Semiconductor device
    Patent number: RE43401
    Abstract: A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: May 22, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroyuki Miyake, Yutaka Shionoiri