Patents by Inventor Yutaka Shionoiri
Yutaka Shionoiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8803370Abstract: An object is to provide a power feeding system and a power feeding method which are higher convenient for a power feeding user on the power receiving side. Another object is to provide a power feeding system and a power feeding method which can offer efficient services by determining or managing a power feeding user and controlling the amount of power supplied to the power receiver appropriately by a company on the power feeding side. A power feeding device which supplies power to a power receiver wirelessly manages the power receiver on the basis of identification information of the power receiver and controls power transmitted to the power receiver on the basis of position information of the power receiver.Type: GrantFiled: June 9, 2011Date of Patent: August 12, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Yoshiyuki Kurokawa, Yutaka Shionoiri
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Patent number: 8798226Abstract: A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node ? is raised. When the potential of the node ? reaches (VDD?VthN), the node ? becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105.Type: GrantFiled: February 6, 2013Date of Patent: August 5, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Sho Nagao, Yoshifumi Tanada, Yutaka Shionoiri, Hiroyuki Miyake
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Patent number: 8786311Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.Type: GrantFiled: October 22, 2013Date of Patent: July 22, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takuro Ohmaru, Yutaka Shionoiri
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Publication number: 20140184162Abstract: Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power storage devices. Further, a semiconductor circuit having a function of carrying out arithmetic is provided for the power storage devices, so that a control system of the power storage devices or a power storage system is constructed.Type: ApplicationFiled: December 20, 2013Publication date: July 3, 2014Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Minoru TAKAHASHI, Junpei MOMO, Yutaka SHIONOIRI
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Patent number: 8750023Abstract: An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.Type: GrantFiled: September 12, 2011Date of Patent: June 10, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuma Furutani, Yutaka Shionoiri
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Patent number: 8716814Abstract: The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.Type: GrantFiled: July 7, 2005Date of Patent: May 6, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kiyoshi Kato, Jun Koyama, Yutaka Shionoiri
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Publication number: 20140117932Abstract: An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the strength of a radio wave radiated to the surroundings. Before power is supplied to a moving object, a radio wave for alignment of antennas is output from a power feeding device. That is, radio waves are output from a power feeding device in two stages. In a first stage, a radio wave is output to align positions of antennas of the power feeding device and the moving object. In a second stage, a radio wave is output to supply power from the power feeding device to the moving object.Type: ApplicationFiled: January 3, 2014Publication date: May 1, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun KOYAMA, Yutaka SHIONOIRI
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Patent number: 8712481Abstract: To provide for a movable electronic device a power receiving device that when charging a battery, simplifies charging of the battery from a power feeder, which is a power supply means, and does not have faults due to an external factor relating to a relay terminal, or damage of the relay terminal, that are caused by directly connecting the battery and the power feeder, and further, to provide an electronic device including the power receiving device. An antenna circuit and a booster antenna for supplying electric power are provided in a movable electronic device. The antenna circuit receives a radio signal such as an electromagnetic wave via the booster antenna, and electric power that is obtained through the receiving of the radio signal is supplied to the battery through a signal processing circuit.Type: GrantFiled: July 22, 2010Date of Patent: April 29, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Jun Koyama, Yoshiyuki Kurokawa, Shunpei Yamazaki, Takayuki Ikeda, Takeshi Osada, Tomoaki Atsumi, Masato Ishii
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Patent number: 8698219Abstract: A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×109 times of writing.Type: GrantFiled: January 11, 2011Date of Patent: April 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yusuke Sekine, Yutaka Shionoiri, Kiyoshi Kato, Shunpei Yamazaki
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Patent number: 8692653Abstract: Objects of the invention are to provide a semiconductor device including an RFID, which can transmit and receive individual information without a check of remaining capacity of the battery and a change of the battery in accordance with deterioration over time of the battery for a driving power supply; and which maintains a favorable communication state even when electric power, as a power supply for driving, from an external radio wave or electromagnetic wave (carrier wave) is not sufficient. A battery is provided as a power supply for supplying electric power in the RFID, and electric power obtained by a power generation element is charged in the battery.Type: GrantFiled: March 12, 2007Date of Patent: April 8, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Konami Izumi, Jun Koyama, Yoshiyuki Kurokawa, Shunpei Yamazaki, Tomoaki Atsumi, Takeshi Osada, Takayuki Ikeda, Masato Ishii
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Publication number: 20140077786Abstract: One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented.Type: ApplicationFiled: November 25, 2013Publication date: March 20, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Junpei Sugao
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Publication number: 20140042496Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.Type: ApplicationFiled: October 22, 2013Publication date: February 13, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takuro OHMARU, Yutaka SHIONOIRI
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Publication number: 20140035671Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.Type: ApplicationFiled: October 8, 2013Publication date: February 6, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
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Patent number: 8624548Abstract: An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the strength of a radio wave radiated to the surroundings. Before power is supplied to a moving object, a radio wave for alignment of antennas is output from a power feeding device. That is, radio waves are output from a power feeding device in two stages. In a first stage, a radio wave is output to align positions of antennas of the power feeding device and the moving object. In a second stage, a radio wave is output to supply power from the power feeding device to the moving object.Type: GrantFiled: February 1, 2011Date of Patent: January 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Yutaka Shionoiri
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Patent number: 8614910Abstract: An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line.Type: GrantFiled: July 20, 2011Date of Patent: December 24, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yutaka Shionoiri
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Patent number: 8604476Abstract: A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate.Type: GrantFiled: October 11, 2011Date of Patent: December 10, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kiyoshi Kato, Yutaka Shionoiri, Shuhei Nagatsuka, Yuto Yakubo, Jun Koyama
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Publication number: 20130322187Abstract: A semiconductor device in which the power consumption of a register is low is provided. Further, a processing unit whose operation speed is high and whose power consumption is low is provided. In the semiconductor device, a register operating at high speed and a nonvolatile FILO (first-in-last-out) register capable of reading and writing data from/to the register are provided.Type: ApplicationFiled: May 29, 2013Publication date: December 5, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Hidetomo Kobayashi, Yoshiyuki Kurokawa
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Publication number: 20130314152Abstract: An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.Type: ApplicationFiled: August 6, 2013Publication date: November 28, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takanori MATSUZAKI, Yutaka SHIONOIRI
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Patent number: 8593840Abstract: One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented.Type: GrantFiled: February 22, 2011Date of Patent: November 26, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Junpei Sugao
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Patent number: RE44657Abstract: A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.Type: GrantFiled: May 15, 2012Date of Patent: December 24, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroyuki Miyake, Yutaka Shionoiri
