Abstract: A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconductor pattern and a first bottom protection pattern disposed between the first semiconductor pattern and the substrate. A first protection layer is formed on the first patterned structures and the substrate. A part of the first protection layer is located between the first patterned structures. A first opening is formed in the first protection layer between the first patterned structures. The first opening penetrates the first protection layer and exposes a part of the substrate. A first etching process is performed after forming the first opening. A part of the substrate under the first patterned structures is removed by the first etching process for suspending at least a part of each of the first patterned structures above the substrate.

Abstract: A turbomachine airfoil element includes an airfoil that has pressure and suction sides spaced apart from one another in a thickness direction and joined to one another at leading and trailing edges. The airfoil extends in a radial direction a span that is in a range of 0.46-0.59 inch (11.8-14.9 mm). A chord length extends in a chordwise direction from the leading edge to the trailing edge at 50% span and is in a range of 0.73-0.86 inch (18.6-21.9 mm). The airfoil element includes at least two of a first mode with a frequency of 5133±15% Hz, a second mode with a frequency of 8542±15% Hz, a third mode with a frequency of 15487±15% Hz, a fourth mode with a frequency of 18774±15% Hz, a fifth mode with a frequency of 24295±15% Hz and a sixth mode with a frequency of 27084±15% Hz.

Abstract: An airfoil has pressure and suction sides spaced apart from one another in a thickness direction and joined to one another at leading and trailing edges. The airfoil extends in a radial direction a span that is in a range of 0.70-0.83 inch (17.8-21.1 mm). A chord length extends in a chordwise direction from the leading edge to the trailing edge at 50% span is in a range of 0.34-0.45 inch (8.5-11.5 mm). The airfoil element includes at least three of a first mode with a frequency of 3748±15% Hz, a second mode with a frequency of 6416±15% Hz, a third mode with a frequency of 14418±15% Hz, a fourth mode with a frequency of 17417±15% Hz, a fifth mode with a frequency of 19326±15% Hz and a sixth mode with a frequency of 26648±15% Hz.

Abstract: A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

Abstract: A projector includes a light sensor, a micromirror device, a light source and a processor. The light sensor senses an ambient brightness. The micromirror device is controlled by a duty cycle. The light source is controlled by a driving current. The processor receives an image including a plurality of non-black pixels. When a brightness of at least one of the non-black pixels is lower than the ambient brightness, the processor increases one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor increases another one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor performs an image processing process for the brightness of the non-black pixels.

Abstract: A projector includes a light sensor, a micromirror device, a light source and a processor. The light sensor senses an ambient brightness. The micromirror device is controlled by a duty cycle. The light source is controlled by a driving current. The processor receives an image including a plurality of non-black pixels. When a brightness of at least one of the non-black pixels is lower than the ambient brightness, the processor increases one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor increases another one of the duty cycle and the driving current. When the brightness of at least one of the non-black pixels is still lower than the ambient brightness after adjustment, the processor performs an image processing process for the brightness of the non-black pixels.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

Abstract: A fixture for display module inspection is disclosed. The fixture includes a base, a lower rotatable body pivotally mounted on the base, a middle rotatable body hinged with the lower rotatable body, an upper rotatable body hinged with the middle rotatable body and a carrier fixedly connected to the upper rotatable body for carrying a display module. A rotation axis of the lower rotatable body and a rotation axis of the middle rotatable body are arranged orthogonally to each other, the rotation axis of the middle rotatable body and a rotation axis of the upper rotatable body are arranged orthogonally to each other. Rotation position locking mechanisms are respectively provided between the lower rotatable body and the base, between the middle rotatable body and the lower rotatable body, and between the upper rotatable body and the middle rotatable body.

Abstract: The present disclosure provides a data transmission method and a terminal. The method includes respectively allocating, by a terminal, a first download range and a second download range to a first network interface card and a second network interface card according to an obtained download range of to-be-downloaded data; and if the terminal determines that when a preset download time arrives, the first network interface card completes downloading of the first download range and the second network interface card does not complete downloading of the second download range, performing, by the terminal, a first allocation operation at least once. This reduces download duration of to-be-downloaded data.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

Abstract: An optical parameter measurement device and a corresponding method are provided. A light beam from a to-be-tested display panel is split by a beam-splitting assembly into at least two testing light beams. A voltage value corresponding to a first testing light beam is measured by a trans-impedance amplification circuit corresponding to a first optical sensor. Next, an integration time period is determined by a control circuit according to voltage values from the trans-impedance amplification circuit and a predetermined relational model between voltage values corresponding to the light intensities and integration time periods. A voltage value corresponding to a second testing light beam is finely measured by the integration circuit corresponding to a second optical sensor within the integration time period. Finally, the display brightness value of the to-be-tested display panel is determined by the control circuit according to a voltage value from the integration circuit within the integration time period.

Abstract: Embodiments of the present invention provide a network channel allocation method and apparatus, relate to the field of communications technologies, and resolve a prior-art problem that a resource is wasted and an intermittent service stop occurs because of resource contention between applications. The method includes: determining, by a terminal, a candidate network channel based on a network request of a first application, where the candidate network channel includes a network channel on which a communications link port is allowed to be established; and allocating, by the terminal, a target network channel from the candidate network channel to the first application according to at least one attribute of the first application, where the at least one attribute includes: whether an application has a specified network channel, whether an application is a foreground application, an application priority level, and whether an application has a restricted network channel.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

Abstract: A detection device of a GOA circuit of a display panel includes a signal supply unit for supplying a test signal to the GOA circuit; an acquisition unit for determining whether each of the GOA units in the GOA unit group of the GOA circuit has an output signal, if there is an output signal, acquiring the output signal of each of the GOA units in the GOA unit group; wherein part of the GOA units in the GOA circuit constitute the GOA unit group, the GOA unit group at least includes an initial GOA unit and a distal GOA unit of the GOA circuit; a processing unit for determining whether the GOA circuit is abnormal based on the acquired output signal of each of the GOA units in the GOA unit group.