Abstract: A semiconductor memory device and a method for accessing the same are disclosed. The semiconductor memory device includes an oxide heterojunction transistor which includes: an oxide substrate; an oxide film on the oxide substrate, wherein an interfacial layer between the oxide substrate and the oxide film behaves like two-dimensional electron gas; a source electrode and a drain electrode being located on the oxide film and electrically connected with the interfacial layer; a front gate on the oxide film; and a back gate on a lower surface of the oxide substrate, wherein the source electrode and the drain electrode of the oxide heterojunction transistor are respectively connected with a first word line and a first bit line for reading operation, and wherein the front gate and the back gate are respectively connected with a second word line and a second bit line for writing operation.

Abstract: Three new crystalline forms of pemetrexed diacid, preparation methods and uses thereof are disclosed. These preparation processes are simple and have better practicality.

Abstract: Operating splitting methods for splitting a circuit into two sub circuits and analyzing the two sub circuits with improved computation efficiency and processing speed.

Abstract: Three new crystalline forms of pemetrexed diacid, preparation methods and uses thereof are disclosed. These preparation processes are simple and have better practicality.

Abstract: This application describes techniques for applying an algebraic multigrid method to analysis of circuit networks with irregular and regular circuit patterns. Adaptive processing may be applied to the grid coarsening and error smoothing operations to increase the processing speed.

Abstract: Techniques are described for performing analysis of circuits with nonlinear circuit components such as transistors based on a two-stage Newton-Raphson approach.

Abstract: Operating splitting methods for splitting a circuit into two sub circuits and analyzing the two sub circuits with improved computation efficiency and processing speed.

Abstract: Techniques for performing circuits with nonlinear circuit components such as transistors based on a two-stage Newton-Raphson approach.

Abstract: This application describes techniques for applying an algebraic multigrid method to analysis of circuit networks with irregular and regular circuit patterns. Adaptive processing may be applied to the grid coarsening and error smoothing operations to increase the processing speed.