Abstract: Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.

Abstract: A multi-function print server administration service implemented on a server computer receives a request, by a user associated with either a vendor-administrator user account or a system administrator account, to modify a first set of one or more application services enabled on one or more multi-function print devices associated with the vendor-administrator user account. In response to receiving the requests, the multi-function print server generates a modified first set of one or more application services, which implements a modification to the one or more application services based on the received request to modify the first set of one or more application services. The multi-function print server administration service enables the modified first set of one or more application services on the one or more multi-function print devices.

Abstract: A server transaction processing service implemented on the apparatus receives requests to authorize user sessions on multi-function print devices. A server application service implemented on the apparatus receives service task requests, which are requests for services that may be at least partially performed at one or more external servers. The application service then sends the service task requests to the appropriate external servers. The transaction processing service receives requests to end active user sessions. Then the transaction processing service is configured to determine whether any service task requests from user sessions were unsuccessfully executed and generate a subset of unsuccessfully executed service task requests. The transaction processing service may generate refund requests for each user session that contained unsuccessfully executed service task requests and send the refund requests to an authorization and capture service for processing.

Abstract: A server transaction processing service implemented on the apparatus receives requests to authorize user sessions on multi-function print devices. A server application service implemented on the apparatus receives service task requests, which are requests for services that may be at least partially performed at one or more external servers. The application service then sends the service task requests to the appropriate external servers. The transaction processing service receives requests to end active user sessions. Then the transaction processing service is configured to determine whether any service task requests from user sessions were unsuccessfully executed and generate a subset of unsuccessfully executed service task requests. The transaction processing service may generate refund requests for each user session that contained unsuccessfully executed service task requests and send the refund requests to an authorization and capture service for processing.

Abstract: A stain-barrier is described along with methods of its application to a fabric. The stain barrier reduces variability between samples of different dilution or fabric type so that limits of stain detection can be assigned more accurately and precisely and stain detection techniques can be transparently compared.

Abstract: Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a select gate source on the etch stop, a charge storage structure over the select gate source, and a select gate drain over the charge storage structure. The semiconductor device may further include an opening extending vertically into the stack structure to a level adjacent to the source. A channel comprising polysilicon may be formed on a side surface and a bottom surface of the opening. The channel may contact the source at a lower portion of the opening, and may be laterally separated from the charge storage structure by a tunnel oxide. A width of the channel adjacent to the select gate source is greater than a width of the channel adjacent to the select gate drain.

Abstract: An approach is provided for acquiring and integrating data into external services. According to the approach, image and/or video data and identification data are received from a client device. The image and/or video data includes one or more images and/or video data of an object that are acquired by the client device and the identification data is data that uniquely identifies the object. Record data is generated and stored that includes the identification data and at least a reference to the image and/or video data. The image and/or video data and the identification data are transmitted to an external service. This identification data allows an external service to associate the image and/or video data with other data maintained by the external service.

Abstract: A multi-function print server administration service implemented on a server computer receives a request, by a user associated with either a vendor-administrator user account or a system administrator account, to modify a first set of one or more application services enabled on one or more multi-function print devices associated with the vendor-administrator user account. In response to receiving the requests, the multi-function print server generates a modified first set of one or more application services, which implements a modification to the one or more application services based on the received request to modify the first set of one or more application services. The multi-function print server administration service enables the modified first set of one or more application services on the one or more multi-function print devices.

Abstract: A multi-function print server administration service implemented on a server computer receives a request, by a user associated with either a vendor-administrator user account or a system administrator account, to modify a first set of one or more application services enabled on one or more multi-function print devices associated with the vendor-administrator user account. In response to receiving the requests, the multi-function print server generates a modified first set of one or more application services, which implements a modification to the one or more application services based on the received request to modify the first set of one or more application services. The multi-function print server administration service enables the modified first set of one or more application services on the one or more multi-function print devices.

Abstract: The present invention relates to a composite material for high-impact polyvinyl chloride reinforced pipe, belonging to the polymer materials technology field. In order to solve the shortcomings of rigidity and toughness of the existing materials, the present invention provides a composite material for high-impact polyvinyl chloride reinforced pipe, comprising: polyvinyl chloride resin: 100; heat stabilizer: 2.0˜8.0; lubricant: 0.1˜7.0; processing modifier: 0.1˜5; composite toughening agent: 8˜50. The composite toughening agent is a masterbatch mainly composed of an elastic polymer, a dispersant and a nano-montmorillonite, and mass ratio of elastic polymer:dispersant:nano-montmorillonite in the composite toughening agent is 58˜85:0.1˜12:10˜30.

Abstract: A linear mark extending perpendicular to a primary step direction of stepped terrace for a three-dimensional memory device can be employed as a reference feature for aligning a trimming material layer before initiating an etch-and-trim process sequence. The linear mark can be formed as a linear trench or a linear rail structure. The distance between a sidewall of each trimming material layer and the linear mark can be measured at multiple locations that are laterally spaced apart perpendicular to the primary step direction to provide statistically significant data points, which can be employed to provide an enhanced control of the staircase patterning process. Likewise, locations of patterned stepped surfaces can be measured at multiple locations to provide enhanced control of the locations of vertical steps in the stepped terrace.

Abstract: Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.

Abstract: Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a select gate source on the etch stop, a charge storage structure over the select gate source, and a select gate drain over the charge storage structure. The semiconductor device may further include an opening extending vertically into the stack structure to a level adjacent to the source. A channel comprising polysilicon may be formed on a side surface and a bottom surface of the opening. The channel may contact the source at a lower portion of the opening, and may be laterally separated from the charge storage structure by a tunnel oxide. A width of the channel adjacent to the select gate source is greater than a width of the channel adjacent to the select gate drain.

Abstract: A multi-tier memory device includes a first tier structure overlying a substrate and containing a first alternating stack of first insulating layers and first electrically conductive layers, and first memory stack structures each including a first memory film and a first vertical semiconductor channel, a source line overlying the first tier structure, and a second tier structure overlying the source line and containing a second alternating stack of second insulating layers and second electrically conductive layers, and second memory stack structures each including a second memory film and a second vertical semiconductor channel.

Abstract: A stain-barrier is described along with methods of its application to a fabric. The stain barrier can be applied to fabric samples and limits the amount of fabric with which deposited liquid is able to interact. This stain barrier reduces unwanted variability between samples of different dilution or fabric type so that limits of stain detection can be assigned more accurately and precisely and stain detection techniques can be transparently compared.

Abstract: An approach is provided for creating and managing pricing models and subscriptions for packages of computer-implemented applications. As used herein, the term “package” refers to a logical entity that has one or more member computer-implemented applications, where each of the member computer-implemented applications provides one or more services. One or more pricing models may be assigned to a package and made available to subscribers and the pricing models assigned to a package may be changed. Users may subscribe to one or more packages of computer-implemented applications and incur charges based upon the pricing models assigned to the packages of computer-implemented applications to which the users subscribe. Embodiments include providing a graphical user interface for service providers to create and manage packages of computer-implemented applications, define pricing models and to manage pricing model assignments for packages of computer-implemented applications.

Abstract: A method of dividing drain select gate electrodes in a three-dimensional vertical memory device is provided. An alternating stack of insulating layers and spacer material layers is formed over a substrate. A first insulating cap layer is formed over the alternating stack. A plurality of memory stack structures is formed through the alternating stack and the first insulating cap layer. The first insulating cap layer is vertically recessed, and a conformal material layer is formed over protruding portions of the memory stack structures. Spacer portions are formed by an anisotropic etch of the conformal material layer such that the sidewalls of the spacer portions having protruding portions. A self-aligned separator trench with non-uniform sidewalls having protruding portions is formed through an upper portion of the alternating stack by etching the upper portions of the alternating stack between the spacer portions.

Abstract: A method of forming a three-dimensional memory device, includes forming a lower stack structure of insulating and first sacrificial material layers over a substrate, forming first memory openings through the lower stack structure and filling the first memory openings with a sacrificial fill material, replacing the first sacrificial material layers with first electrically conductive layers, forming an upper stack structure of insulating and second sacrificial material layers over the lower stack structure after replacing the first sacrificial material layers, forming second memory openings through the upper stack structure in areas overlying the first memory openings, replacing the second sacrificial material layers with second electrically conductive layers, removing the sacrificial fill material from the first memory openings underneath the second memory openings to form inter-stack memory openings after replacing the second sacrificial material layers, and forming memory stack structures within the inter-st

Abstract: Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.

Abstract: A linear mark extending perpendicular to a primary step direction of stepped terrace for a three-dimensional memory device can be employed as a reference feature for aligning a trimming material layer before initiating an etch-and-trim process sequence. The linear mark can be formed as a linear trench or a linear rail structure. The distance between a sidewall of each trimming material layer and the linear mark can be measured at multiple locations that are laterally spaced apart perpendicular to the primary step direction to provide statistically significant data points, which can be employed to provide an enhanced control of the staircase patterning process. Likewise, locations of patterned stepped surfaces can be measured at multiple locations to provide enhanced control of the locations of vertical steps in the stepped terrace.