Patents by Inventor Zhijian Lu

Zhijian Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060194447
    Abstract: A method of manufacturing an etch stop layer 18, 20, 21 on a semiconductor wafer 2 and the etch stop layer 18, 20, 21 produced by the method. The method includes depositing a dielectric layer 18, 20, 21 and applying a plasma treatment to the semiconductor wafer 2. Also, an etch stop layer 18, 20, 21 on a semiconductor wafer 2 having a modified surface and an amine deficient bulk.
    Type: Application
    Filed: May 12, 2006
    Publication date: August 31, 2006
    Applicant: Texas Instruments Incorporated
    Inventors: Ju-Ai Ruan, Qi-Zhong Hong, Zhijian Lu
  • Patent number: 7090967
    Abstract: A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: August 15, 2006
    Assignee: Infineon Technologies AG
    Inventors: Zhijian Lu, Chieh-Yu Lin
  • Publication number: 20060126175
    Abstract: Viewing screens having highly light absorptive carbon nanotubes, fullerenes and/or fullerides dispersed in a resinous or polymeric material as part of the light absorbing material located between the light transmission apertures. The highly light absorptive composite of carbon nanotubes, fullerenes and/or fullerides and polymeric material may be conductive. A voltage potential having DC and/or AC components or a ground potential may be applied to the surface of the viewing screen. Such a potential may be selected such that it prevents or reduces the build-up of dust on the viewing screen.
    Type: Application
    Filed: August 29, 2005
    Publication date: June 15, 2006
    Inventors: Zhijian Lu, Ilyas Khayrullin
  • Publication number: 20060110901
    Abstract: The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substrate (130) and then forming a base getter material (210) in the via (160). The method further includes forming a photoresist layer (410) over the base getter material (210), the photoresist layer (410) having an opening (420) therein positioned over the via (160), and etching a trench (510) into the substrate (130) using the opening (420) in the photoresist layer (410).
    Type: Application
    Filed: November 19, 2004
    Publication date: May 25, 2006
    Applicant: Texas Instruments, Inc.
    Inventors: Zhijian Lu, Thomas Wolf, Scott Jessen
  • Publication number: 20060088912
    Abstract: The present invention provides compositions and methods useful for purifying recombinant myelin-associated glycoprotein (MAG) and fragments thereof. In particular, the invention provides a one-step purification method for MAG and MAG fragments. Novel forms of human recombinant MAG protein are also disclosed in addition to methods of reliably producing and storing stable recombinant MAG proteins.
    Type: Application
    Filed: July 13, 2005
    Publication date: April 27, 2006
    Applicant: WYETH
    Inventors: Gouying Yan, Yuhong Xie, Janet Paulsen, Jimin Zhang, Dionna Rookey, Brian Bates, Zhijian Lu, Robert Mark, Susie Campos
  • Publication number: 20060081965
    Abstract: A method of manufacturing an etch stop layer 18, 20, 21 on a semiconductor wafer 2 and the etch stop layer 18, 20, 21 produced by the method. The method includes depositing a dielectric layer 18, 20, 21 and applying a plasma treatment to the semiconductor wafer 2. Also, an etch stop layer 18, 20, 21 on a semiconductor wafer 2 having a modified surface and an amine deficient bulk.
    Type: Application
    Filed: October 15, 2004
    Publication date: April 20, 2006
    Inventors: Ju-Ai Ruan, Qi-Zhong Hong, Zhijian Lu
  • Publication number: 20060053502
    Abstract: The invention relates to systems and methods for producing proteins of interest. The invention employs genetically-engineered animal or plant cells that have modified protein folding or processing capacities. In one aspect, the invention features genetically-engineered cells comprising one or more recombinant expression cassettes which encode (1) a protein of interest and (2) a polypeptide that is functional in the unfolded protein response (UPR) pathway of the cells. Co-expression of the polypeptide significantly increases the yield of the protein of interest in the genetically-engineered cells. In one example, the genetically-engineered cells are animal cells, and the co-expressed polypeptide is a component or modulator of an XBP1- or ATF6-mediated UPR pathway.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 9, 2006
    Inventors: Yijie Gao, Nicole Piche, Mei Geng, Stephen Herrmann, Xiaotian Zhong, Ronald Kriz, Zhijian Lu
  • Publication number: 20060040999
    Abstract: Compounds having the structures of Formula I, including pharmaceutically acceptable salts of the compounds, are CETP inhibitors, and are useful for raising HDL-cholesterol, reducing LDL-cholesterol, and for treating or preventing atherosclerosis: In the compounds of Formula I, B or R2 is a phenyl group which has an ortho aryl, heterocyclic, benzoheterocyclic or benzocycloalkyl substituent, and one other position on the 5-membered ring has an aromatic, heterocyclic, cycloalkyl, benzoheterocyclic or benzocycloalkyl substituent connected directly to the ring or attached to the ring through a —CH2—.
    Type: Application
    Filed: July 1, 2005
    Publication date: February 23, 2006
    Inventors: Amjad Ali, Joann Napolitano, Qiaolin Deng, Zhijian Lu, Peter Sinclair, Gayle Taylor, Christopher Thompson, Nazia Quraishi, Cameron Smith, Julianne Hunt, Adrian Dowst, Yi-Heng Chen, Hong Li
  • Patent number: 6989230
    Abstract: In a process of producing low k inter-layer dielectric film in an interconnect structure on a semiconductor body, the improvement of preventing resist poisoning effects, comprising: a) providing an interconnect structure comprising a substrate and metal line on a semiconductor body; b) depositing an antireflective (ARC) coating layer over the substrate and metal line; c) depositing a Si-containing resist coating on the ARC layer; d) affecting photolithography to provide a contact hole in the Si-containing resist coating; e) affecting silylation to obtain a Si-rich film by increasing Si content in the resist coating; f) subjecting the Si-rich film to oxidation to convert it to a low k oxide porous dielectric film; and g) affecting an ARC opening by removing the ARC coating in the contact hole.
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: January 24, 2006
    Assignee: Infineon Technologies AG
    Inventor: Zhijian Lu
  • Patent number: 6968528
    Abstract: Photo reticles (110) are formed comprising a first and second printable features (130), (140) which are connected by a channel assist feature (150). The size of the channel assist feature is such that the channel assist feature will not substantially print on photoresist that is exposed using the reticle. Third printable features (120) can be placed a distance WD from the channel assist feature (150). The channel assist feature will assist in the formation of the third printable feature (120).
    Type: Grant
    Filed: April 2, 2003
    Date of Patent: November 22, 2005
  • Publication number: 20050241672
    Abstract: A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more co-solvents. Solvents may comprise 1-hexanol, 1-propanol, 2-propanol, acetone, ammonia, argon, carbon dioxide, chlorotrifluoromethane, cyclohexane, dichlorodifluoromethane, ethane, ethyl alcohol, ethylene, methane, methanol, n-butane, n-hexane, nitrous oxide, n-pentane, propane, propylene, toluene, trichlorofluoromethane, trichloromethane, water, or combinations thereof.
    Type: Application
    Filed: August 13, 2004
    Publication date: November 3, 2005
    Applicant: Texas Instruments Incorporated
    Inventors: Phillip Matz, Sameer Ajmera, Ju-Ai Ruan, Jinyoung Kim, Zhijian Lu, Laura Matz
  • Publication number: 20050233168
    Abstract: The present invention relates to an organic light emitting device having an emitting layer including a photoalignable organic light emitting material, and the method of aligning the photoalignable organic light emitting material and fabricating devices including such a material.
    Type: Application
    Filed: January 14, 2005
    Publication date: October 20, 2005
    Inventors: John Magno, Zhijian Lu
  • Publication number: 20050059255
    Abstract: A wafer having a top surface including a first material such as silicon dioxide or silicon nitride and a second material such as polysilicon or copper is etched so as to leave elements formed from the second material projecting above the surrounding surface defined by the first material. An opaque layer may be applied over the newly-formed top surface covered by a transparent layer such as a photoresist. The opaque layer has raised features corresponding to the projecting features formed from the second material. These raised features provide contrast and allow an optical system to locate the wafer as, for example, in registering the wafer in a wafer stepper. Alternatively, transparent layers such as an oxide dielectric and a photoresist may be applied after etching. The projecting elements formed by etching remain visible through the transparent layers and similarly allow optical location.
    Type: Application
    Filed: September 12, 2003
    Publication date: March 17, 2005
    Applicants: Infineon Technologies North America Corp., International Business Machines
    Inventors: Lawrence Varnerin, Zhijian Lu, Qiang Wu
  • Patent number: 6852508
    Abstract: This invention provides polynucleotides comprising sequences encoding amino-terminal-modified chemokines, the encoded amino-terminal-modified chemokines, and uses thereof.
    Type: Grant
    Filed: October 20, 1998
    Date of Patent: February 8, 2005
    Assignees: Genetics Institute, LLC, The General Hospital Corporation
    Inventors: Stephen H. Herrmann, Zhijian Lu, John M. McCoy, Stephen L. Swanberg, Bruce Walker, Otto Yang
  • Publication number: 20050020528
    Abstract: This invention provides polynucleotides comprising sequences encoding amino-terminal-modified chemokines, the encoded amino-terminal-modified chemokines, and uses thereof.
    Type: Application
    Filed: August 23, 2004
    Publication date: January 27, 2005
    Inventors: Stephen Herrmann, Zhijian Lu, John McCoy, Stephen Swanberg, Bruce Walker, Otto Yang
  • Publication number: 20040259371
    Abstract: Photoresist patterning defects, such as “kissing” defects, can be reduced by rinsing semiconductor wafers in a surfactant-containing rinse, instead of deionized water, at the end of the development process.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 23, 2004
    Inventor: Zhijian Lu
  • Publication number: 20040197673
    Abstract: Photo reticles (110) are formed comprising a first and second printable features (130), (140) which are connected by a channel assist feature (150). The size of the channel assist feature is such that the channel assist feature will not substantially print on photoresist that is exposed using the reticle. Third printable features (120) can be placed at distances WD from the channel assist feature (150). The channel assist feature will assist in the formation of the third printable feature (120).
    Type: Application
    Filed: April 2, 2003
    Publication date: October 7, 2004
  • Publication number: 20040126705
    Abstract: A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 1, 2004
    Inventors: Zhijian Lu, Chieh-Yu Lin
  • Patent number: 6740594
    Abstract: A method for removing a carbon-containing polysilane from a semiconductor substrate without stripping the polysilane during manufacture of a semiconductor device, the method entailing the steps in the following order of coating a carbon-containing polysilane on a semiconductor substrate and coating a resist on the polysilane; patterning the resist with exposure and development; transferring the pattern from the resist to the polysilane using an etch process selective to the resist; stripping the resist; transferring the pattern from the polysilane to a hardmask using an etch selective to the hardmask; subjecting the polysilane to thermal or plasma/thermal oxidation to convert the polysilane to silicon oxide; and etching the substrate and stripping off the hardmask.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: May 25, 2004
    Assignee: Infineon Technologies AG
    Inventors: Zhijian Lu, Oliver Genz
  • Patent number: 6670646
    Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: December 30, 2003
    Assignee: Infineon Technologies AG
    Inventors: Zhijian Lu, Shahid Butt, Alois Gutmann