Abstract: The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substrate (130) and then forming a base getter material (210) in the via (160). The method further includes forming a photoresist layer (410) over the base getter material (210), the photoresist layer (410) having an opening (420) therein positioned over the via (160), and etching a trench (510) into the substrate (130) using the opening (420) in the photoresist layer (410).

Abstract: A structure including an integrally formed diffuser may be formed by depositing a first layer including a first polymerizable material and another material, and depositing a second layer including a second polymerizable material adjacent the first layer. The first and second layers are simultaneously irradiated with light that causes the first polymerizable material and the second polymerizable material to polymerize. There is not an optical boundary between the first and second layers since the first and second materials are polymerized together.

Abstract: The present invention provides a general charging method applicable to a charging system in the communication field, comprising steps of establishing a charging strategy and performing the charging based upon the charging strategy. The charging strategy comprises a plurality of priorities each of which comprises a plurality of periods of time, and each of the periods of time corresponds to a type of rate segmentation and is provided a plurality of rate segments in each of which there are a plurality of rates. The step of performing the charging comprises steps of: searching for the highest priority in the charging strategy; searching for a corresponding period of time in the priority based upon the time a subscriber uses a service, and if found, performing the charging based upon the rate segments in the period of time; when the charging has been completed or the priorities have been searched through, and if there is any usage quantity that can't be charged, recording it and terminating the charging.

Abstract: A method of manufacturing an etch stop layer 18, 20, 21 on a semiconductor wafer 2 and the etch stop layer 18, 20, 21 produced by the method. The method includes depositing a dielectric layer 18, 20, 21 and applying a plasma treatment to the semiconductor wafer 2. Also, an etch stop layer 18, 20, 21 on a semiconductor wafer 2 having a modified surface and an amine deficient bulk.

Abstract: A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.

Abstract: Viewing screens having highly light absorptive carbon nanotubes, fullerenes and/or fullerides dispersed in a resinous or polymeric material as part of the light absorbing material located between the light transmission apertures. The highly light absorptive composite of carbon nanotubes, fullerenes and/or fullerides and polymeric material may be conductive. A voltage potential having DC and/or AC components or a ground potential may be applied to the surface of the viewing screen. Such a potential may be selected such that it prevents or reduces the build-up of dust on the viewing screen.

Abstract: The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substrate (130) and then forming a base getter material (210) in the via (160). The method further includes forming a photoresist layer (410) over the base getter material (210), the photoresist layer (410) having an opening (420) therein positioned over the via (160), and etching a trench (510) into the substrate (130) using the opening (420) in the photoresist layer (410).

Abstract: The present invention provides compositions and methods useful for purifying recombinant myelin-associated glycoprotein (MAG) and fragments thereof. In particular, the invention provides a one-step purification method for MAG and MAG fragments. Novel forms of human recombinant MAG protein are also disclosed in addition to methods of reliably producing and storing stable recombinant MAG proteins.

Abstract: A method of manufacturing an etch stop layer 18, 20, 21 on a semiconductor wafer 2 and the etch stop layer 18, 20, 21 produced by the method. The method includes depositing a dielectric layer 18, 20, 21 and applying a plasma treatment to the semiconductor wafer 2. Also, an etch stop layer 18, 20, 21 on a semiconductor wafer 2 having a modified surface and an amine deficient bulk.

Abstract: The invention relates to systems and methods for producing proteins of interest. The invention employs genetically-engineered animal or plant cells that have modified protein folding or processing capacities. In one aspect, the invention features genetically-engineered cells comprising one or more recombinant expression cassettes which encode (1) a protein of interest and (2) a polypeptide that is functional in the unfolded protein response (UPR) pathway of the cells. Co-expression of the polypeptide significantly increases the yield of the protein of interest in the genetically-engineered cells. In one example, the genetically-engineered cells are animal cells, and the co-expressed polypeptide is a component or modulator of an XBP1- or ATF6-mediated UPR pathway.

Abstract: Compounds having the structures of Formula I, including pharmaceutically acceptable salts of the compounds, are CETP inhibitors, and are useful for raising HDL-cholesterol, reducing LDL-cholesterol, and for treating or preventing atherosclerosis: In the compounds of Formula I, B or R2 is a phenyl group which has an ortho aryl, heterocyclic, benzoheterocyclic or benzocycloalkyl substituent, and one other position on the 5-membered ring has an aromatic, heterocyclic, cycloalkyl, benzoheterocyclic or benzocycloalkyl substituent connected directly to the ring or attached to the ring through a —CH2—.

Abstract: In a process of producing low k inter-layer dielectric film in an interconnect structure on a semiconductor body, the improvement of preventing resist poisoning effects, comprising: a) providing an interconnect structure comprising a substrate and metal line on a semiconductor body; b) depositing an antireflective (ARC) coating layer over the substrate and metal line; c) depositing a Si-containing resist coating on the ARC layer; d) affecting photolithography to provide a contact hole in the Si-containing resist coating; e) affecting silylation to obtain a Si-rich film by increasing Si content in the resist coating; f) subjecting the Si-rich film to oxidation to convert it to a low k oxide porous dielectric film; and g) affecting an ARC opening by removing the ARC coating in the contact hole.

Abstract: Photo reticles (110) are formed comprising a first and second printable features (130), (140) which are connected by a channel assist feature (150). The size of the channel assist feature is such that the channel assist feature will not substantially print on photoresist that is exposed using the reticle. Third printable features (120) can be placed a distance WD from the channel assist feature (150). The channel assist feature will assist in the formation of the third printable feature (120).

Abstract: A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more co-solvents. Solvents may comprise 1-hexanol, 1-propanol, 2-propanol, acetone, ammonia, argon, carbon dioxide, chlorotrifluoromethane, cyclohexane, dichlorodifluoromethane, ethane, ethyl alcohol, ethylene, methane, methanol, n-butane, n-hexane, nitrous oxide, n-pentane, propane, propylene, toluene, trichlorofluoromethane, trichloromethane, water, or combinations thereof.

Abstract: The present invention relates to an organic light emitting device having an emitting layer including a photoalignable organic light emitting material, and the method of aligning the photoalignable organic light emitting material and fabricating devices including such a material.

Abstract: A wafer having a top surface including a first material such as silicon dioxide or silicon nitride and a second material such as polysilicon or copper is etched so as to leave elements formed from the second material projecting above the surrounding surface defined by the first material. An opaque layer may be applied over the newly-formed top surface covered by a transparent layer such as a photoresist. The opaque layer has raised features corresponding to the projecting features formed from the second material. These raised features provide contrast and allow an optical system to locate the wafer as, for example, in registering the wafer in a wafer stepper. Alternatively, transparent layers such as an oxide dielectric and a photoresist may be applied after etching. The projecting elements formed by etching remain visible through the transparent layers and similarly allow optical location.

Abstract: This invention provides polynucleotides comprising sequences encoding amino-terminal-modified chemokines, the encoded amino-terminal-modified chemokines, and uses thereof.

Abstract: This invention provides polynucleotides comprising sequences encoding amino-terminal-modified chemokines, the encoded amino-terminal-modified chemokines, and uses thereof.

Abstract: Photoresist patterning defects, such as “kissing” defects, can be reduced by rinsing semiconductor wafers in a surfactant-containing rinse, instead of deionized water, at the end of the development process.

Abstract: Photo reticles (110) are formed comprising a first and second printable features (130), (140) which are connected by a channel assist feature (150). The size of the channel assist feature is such that the channel assist feature will not substantially print on photoresist that is exposed using the reticle. Third printable features (120) can be placed at distances WD from the channel assist feature (150). The channel assist feature will assist in the formation of the third printable feature (120).