Patents by Inventor Zhiqiang Wu

Zhiqiang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160196983
    Abstract: A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.
    Type: Application
    Filed: March 17, 2016
    Publication date: July 7, 2016
    Inventors: Xiaomeng Chen, Chien-Hong Chen, Shih-Chang Liu, Zhiqiang Wu
  • Patent number: 9349850
    Abstract: A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon layer over the silicon germanium layer, and performing a first oxidation to oxidize the silicon germanium layer, wherein first silicon germanium oxide regions are generated. A strain releasing operation is performed to release a strain caused by the first silicon germanium oxide regions. A gate dielectric is formed on a top surface and a sidewall of the silicon layer. A gate electrode is formed over the gate dielectric.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: May 24, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jean-Pierre Colinge, Kuo-Cheng Ching, Gwan Sin Chang, Zhiqiang Wu, Chih-Hao Wang, Carlos H. Diaz
  • Patent number: 9343551
    Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacturing a semiconductor device comprises forming a fin structure over a substrate. The fin structure may comprise a lower portion protruding from a major surface of the substrate, an upper portion, and a middle portion between the lower portion and the upper portion, wherein the lower portion and the middle portion differ in composition. The method may further include forming an isolation structure surrounding the fin structure and oxidizing the fin structure. The oxidizing may form a pair of notches extending from sidewalls of the fin structure into the middle portion of the fin structure.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: May 17, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Ching, Chih-Hao Wang, Zhiqiang Wu, Carlos H. Diaz, Jean-Pierre Colinge
  • Publication number: 20160126343
    Abstract: A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions of the isolation regions, wherein the semiconductor fin is over top surfaces of the isolation regions. A gate stack overlaps the semiconductor fin. A source/drain region is on a side of the gate stack and connected to the semiconductor fin. The source/drain region includes an inner portion thinner than the semiconductor fin, and an outer portion outside the inner portion. The semiconductor fin and the inner portion of the source/drain region have a same composition of group IV semiconductors.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 5, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu
  • Patent number: 9317558
    Abstract: Database data is unmasked in order to facilitate its efficient handling by a database engine. In response to a request for data of a masked table including a masked element, an engine identifies a mask interval, and then performs a first join with unmasked elements sharing a common key. The table resulting from this first join is then grouped according to a highest level location of the mask. A second join is then performed between the results of this grouping and the mask interval, to produce a corresponding unmasked table including a plurality of unmasked elements corresponding to the masked element. Unmasking according to embodiments may be particularly useful in leveraging processing power of an in-memory database engine, allowing it to efficiently perform batch processing of requests for masked data received from software of an overlying application layer.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: April 19, 2016
    Assignee: SAP SE
    Inventor: Zhiqiang Wu
  • Patent number: 9318606
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having isolation regions, a gate region, source and drain regions separated by the gate region, a first fin structure in a gate region. The first fin structure includes a first semiconductor material layer as a lower portion of the first fin structure, a semiconductor oxide layer as an outer portion of a middle portion of the first fin structure, the first semiconductor material layer as a center portion of the middle portion of the first fin structure and a second semiconductor material layer as an upper portion of the first fin structure. The semiconductor device also includes a source/drain feature over the substrate in the source/drain region between two adjacent isolation regions and a high-k (HK)/metal gate (MG) stack in the gate region, wrapping over a portion of the first fin structure.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: April 19, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hao Wang, Kuo-Cheng Ching, Gwan Sin Chang, Zhiqiang Wu
  • Patent number: 9318322
    Abstract: System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: April 19, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhiqiang Wu, Ken-Ichi Goto, Wen-Hsing Hsieh, Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang
  • Publication number: 20160104776
    Abstract: An embodiment semiconductor device includes a fin extending upwards from a semiconductor substrate. The fin includes an anti-punch through (APT) layer having APT dopants and a channel region over the APT layer. The channel region is substantially free of APT dopants. The semiconductor device further includes a conductive gate stack on a sidewall and a top surface of the channel region.
    Type: Application
    Filed: November 26, 2014
    Publication date: April 14, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu
  • Patent number: 9306067
    Abstract: A nonplanar circuit device having a strain-producing structure disposed under the channel region is provided. In an exemplary embodiment, the integrated circuit device includes a substrate with a first fin structure and a second fin structure disposed on the substrate. An isolation feature trench is defined between the first fin structure and the second fin structure. The circuit device also includes a strain feature disposed on a horizontal surface of the substrate within the isolation feature trench. The strain feature may be configured to produce a strain on a channel region of a transistor formed on the first fin structure. The circuit device also includes a fill dielectric disposed on the strain feature within the isolation feature trench. In some such embodiments, the strain feature is further disposed on a vertical surface of the first fin structure and on a vertical surface of the second fin structure.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: April 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu
  • Patent number: 9299810
    Abstract: A fin-type field effect transistor includes a first fin including a first source, a first drain, and a first channel. The fin-type field effect transistor includes a second fin including a second source, a second drain, and a second channel. The fin-type field effect transistor includes a first semiconductor region under the first fin and a second semiconductor region under the second fin. A first reacted region is adjacent the first semiconductor region while a second reacted region is adjacent the second semiconductor region. The first reacted region has a first dimension causing a first strain in the first channel. The second reacted region has a second dimension causing a second strain in the second channel. The first strain and second strain are substantially equal to one another. A method of fabricating an example fin-type field effect transistor is provided.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: March 29, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Kuo-Cheng Ching, Chih-Hao Wang, Zhiqiang Wu, Carlos H. Diaz, Jean-Pierre Colinge
  • Patent number: 9299784
    Abstract: A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region.
    Type: Grant
    Filed: October 6, 2013
    Date of Patent: March 29, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Xiaomeng Chen, Zhiqiang Wu, Shih-Chang Liu, Chien-Hong Chen
  • Patent number: 9299768
    Abstract: A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.
    Type: Grant
    Filed: October 6, 2013
    Date of Patent: March 29, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Xiaomeng Chen, Zhiqiang Wu, Shih-Chang Liu, Chien-Hong Chen
  • Publication number: 20160087041
    Abstract: The present disclosure describes a fin-like field-effect transistor (FinFET). The device includes one or more fin structures over a substrate, each with source/drain (S/D) features and a high-k/metal gate (HK/MG). A first HK/MG in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial silicon (Si) layer as its upper portion and an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion, and the substrate as its bottom portion. A second HK/MG in a second gate region, wraps over an upper portion of a second fin structure, the second fin structure including an epitaxial SiGe layer as its upper portion, an epitaxial Si layer as it upper middle portion, an epitaxial SiGe layer as its lower middle portion, and the substrate as its bottom portion.
    Type: Application
    Filed: December 4, 2015
    Publication date: March 24, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu
  • Publication number: 20160079427
    Abstract: The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a first fin structure disposed over an n-type FinFET (NFET) region of a substrate. The first fin structure includes a silicon (Si) layer, a silicon germanium oxide (SiGeO) layer disposed over the silicon layer and a germanium (Ge) feature disposed over the SiGeO layer. The device also includes a second fin structure over the substrate in a p-type FinFET (PFET) region. The second fin structure includes the silicon (Si) layer, a recessed silicon germanium oxide (SiGeO) layer disposed over the silicon layer, an epitaxial silicon germanium (SiGe) layer disposed over the recessed SiGeO layer and the germanium (Ge) feature disposed over the epitaxial SiGe layer.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 17, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu, Carlos H. Diaz
  • Publication number: 20160064560
    Abstract: The present disclosure relates to a transistor device having an epitaxial carbon layer and/or a carbon implantation region that provides for a low variation of voltage threshold, and an associated method of formation. In some embodiments, the transistor device has an epitaxial region arranged within a recess within a semiconductor substrate. The epitaxial region has a carbon doped silicon epitaxial layer and a silicon epitaxial layer disposed onto the carbon doped silicon epitaxial layer. A gate structure is arranged over the silicon epitaxial layer. The gate structure has a gate dielectric layer disposed onto the silicon epitaxial layer and a gate electrode layer disposed onto the gate dielectric layer. A source region and a drain region are arranged on opposing sides of a channel region disposed below the gate structure.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Inventors: Tsung-Hsing Yu, Chia-Wen Liu, Yeh Hsu, Shih-Syuan Huang, Ken-Ichi Goto, Zhiqiang Wu
  • Publication number: 20160049338
    Abstract: The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrate in the first gate region. The first fin structure includes an upper semiconductor material member, a lower semiconductor material member, surrounded by an oxide feature and a liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member. The device also includes a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member. Therefore the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner.
    Type: Application
    Filed: October 27, 2015
    Publication date: February 18, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu
  • Patent number: 9263535
    Abstract: The device includes a wafer substrate including an isolation feature, a fin base embedded in the isolation feature, at least one channel disposed above the fin base, and a gate stack disposed around the channel, wherein the gate stack includes a top portion and a bottom portion of the gate stack formed by filling a cavity around the channel such that the top portion and bottom portion are aligned each other. The device further includes at least one source and one drain disposed over the fin base, wherein the channel connects the source and the drain. The device further includes the source and the drain disposed over a fin insulator disposed over the fin base.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: February 16, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jean-Pierre Colinge, Kuo-Cheng Ching, Zhiqiang Wu
  • Publication number: 20160043225
    Abstract: A nonplanar circuit device having a strain-producing structure disposed under the channel region is provided. In an exemplary embodiment, the integrated circuit device includes a substrate with a first fin structure and a second fin structure disposed on the substrate. An isolation feature trench is defined between the first fin structure and the second fin structure. The circuit device also includes a strain feature disposed on a horizontal surface of the substrate within the isolation feature trench. The strain feature may be configured to produce a strain on a channel region of a transistor formed on the first fin structure. The circuit device also includes a fill dielectric disposed on the strain feature within the isolation feature trench. In some such embodiments, the strain feature is further disposed on a vertical surface of the first fin structure and on a vertical surface of the second fin structure.
    Type: Application
    Filed: August 5, 2014
    Publication date: February 11, 2016
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu
  • Patent number: 9257559
    Abstract: A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFet, as compared to a FinFet including fins that do not include a dielectric disposed within a furrow.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo-Cheng Ching, Chih-Hao Wang, Zhiqiang Wu, Carlos H. Diaz
  • Patent number: 9257428
    Abstract: The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a plurality of first fin structures over a substrate. The first fin structure includes a first semiconductor material layer, a second semiconductor material layer disposed over the first semiconductor material layer, being at least partially surrounded by a semiconductor oxide feature. The device also includes a third semiconductor material layer disposed over the second semiconductor material layer and a second fin structures over the substrate and adjacent to one of the first fin structures. The second fin structure includes the first semiconductor material layer and the third semiconductor material layer disposed over the dielectric layer.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Zhiqiang Wu