Patents by Inventor Zhong Zhang

Zhong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220246527
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stack of word line layers and insulating layers that are stacked alternatingly over the substrate, and channel structures formed in a first array region and a second array region of the stack. The first array region and the second array region are positioned at opposing sides of the stack. A first staircase is formed in a connection region of the stack over the substrate, where the connection region is arranged between the first and second array regions. A second staircase is formed in the connection region of the stack over the substrate, and the connection region in the stack includes a separation region between the first and second staircases.
    Type: Application
    Filed: April 20, 2022
    Publication date: August 4, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd
    Inventors: Zhongwang SUN, Zhong ZHANG, Wenxi ZHOU, Zhiliang XIA
  • Publication number: 20220247430
    Abstract: Apparatuses and methods for pipelining memory operations with error correction coding are disclosed. A method for pipelining consecutive write mask operations is disclosed wherein a second read operation of a second write mask operation occurs during error correction code calculation of a first write mask operation. The method may further including writing data from the first write mask operation during the error correction code calculation of the second write mask operation. A method for pipelining consecutive operations is disclosed where a first read operation may be cancelled if the first operation is not a write mask operation. An apparatus including a memory having separate global read and write input-output lines is disclosed.
    Type: Application
    Filed: April 18, 2022
    Publication date: August 4, 2022
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Wei Bing Shang, Yu Zhang, Hong Wen Li, Yu Peng Fan, Zhong Lai Liu, En Peng Gao, Liang Zhang
  • Patent number: 11403899
    Abstract: A method for smart door operation implemented on a computer may include obtaining image data of one or more subjects. The image data may be acquired by one or more cameras in communication with the computer. The method may also include determining, based on the image data, one or more gait features of at least one of the one or more subjects and determining, at least in part based on the one or more gait features, identity information of the at least one of the one or more subjects. The method may further include sending an unlocking signal to a lock based on the unlocking signal so that the lock is unlocked.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: August 2, 2022
    Assignee: SHANGHAI TRUTHVISION INFORMATION TECHNOLOGY CO., LTD.
    Inventor: Zhong Zhang
  • Publication number: 20220231468
    Abstract: The present disclosure discloses a power supply socket with vibration touch keys, and relates to a touch power supply socket used on an electric kettle and a coffee pot. The power supply socket comprises a face shell, a bottom cover, a lower connector, a control circuit board and a power cord, wherein the inner side of the face shell is provided with a vibration motor installing groove, a vibration motor is installed in the vibration motor installing groove, the vibration surface of the vibration motor is in close contact with the bottom plane of the vibration motor installing groove, the vibration motor is electrically connected with the control circuit board, and the vibration motor has synchronous vibration signal feedback when a finger touches a key. The key of the present disclosure has good waterproof, dustproof, LED light guiding and vibrating effects.
    Type: Application
    Filed: October 22, 2021
    Publication date: July 21, 2022
    Applicant: Shenzhen Buydeem Technology Co.
    Inventors: George Mohan ZHANG, Pengrui ZHONG, Shubin ZOU, Haixin WU, Jun WANG, Chenfa KANG
  • Publication number: 20220221618
    Abstract: A lens protection structure includes a base, a polyester film, a first silica gel, a second silica gel, and a protective cover. Each of the base, the polyester film, the first silica gel, and the second silica gel defines a through hole for cooperatively receiving a lens. The polyester film is coupled to a surface of the base, and the first silica gel is coupled to a surface of the base opposite the polyester film. The second silica gel is coupled to the polyester film. The protective cover is coupled to the second silica gel and seals a receiving cavity within the base. At least one air escape channel is defined in the base. The at least one air escape channel communicates the receiving cavity of the base to an exterior of the lens protection structure.
    Type: Application
    Filed: March 9, 2021
    Publication date: July 14, 2022
    Inventors: SHIN-WEN CHEN, LONG-FEI ZHANG, KUN LI, HAO-ZHONG LIU
  • Publication number: 20220213358
    Abstract: An adhesive composition is described comprising a polyisobutylene polymer component; and up to 30 wt.-% of at least one aliphatic multifunctional component comprising at least two ethylenically unsaturated groups selected from (meth)acryl or vinyl ether. The monomer comprises a hydrocarbon moiety with greater than 12 contiguous carbon atoms. When the hydrocarbon moiety is branched, the hydrocarbon moiety comprises side chains with at least two carbon atoms. The aliphatic multifunctional component is sufficiently compatible such that crosslinked adhesive composition at a thickness of 20 microns has a haze of less than 3%. Also described are adhesive articles.
    Type: Application
    Filed: May 19, 2020
    Publication date: July 7, 2022
    Inventors: Vasav Sahni, Jason D. Clapper, John W. McAllister, Albert I. Everaerts, Jacob P. Johnson, Zhong Chen, Ying Zhang, Benjamin J. Bending
  • Patent number: 11377941
    Abstract: A gasflow distribution device includes an outer pipe, a gland, a filter screen, and a filling block with a pore structure. The outer pipe is a hollow outer pipe, used for placing the filling block, with an open upper end and a lower end with a bottom of which the center part is provided with a bottom hole, wherein the filling block is sealed to an inner wall of the outer pipe. The gland has a bottom end provided with a circular groove for setting the filter screen, and a top end distributed evenly with a plurality of top holes through the gland. The gland is connected to the outer pipe. The device can distribute gasflow proportionally, and can be used for separate-layer gas injection.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: July 5, 2022
    Assignee: PETROCHINA COMPANY LIMITED
    Inventors: Xinglong Chen, Jingyao Wang, Chengming Zhang, Shitou Wang, Jiazhong Wu, Zhong Ren
  • Patent number: 11380629
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A peripheral circuit is formed on a first substrate. A first semiconductor layer is formed on a second substrate. A supporting structure and a second semiconductor layer coplanar with the supporting structure are formed on the first semiconductor layer. A memory stack is formed above the supporting structure and the second semiconductor layer. The memory stack has a staircase region overlapping the supporting structure. A channel structure extending vertically through the memory stack and the second semiconductor layer into the first semiconductor layer is formed. The first substrate and the second substrate are bonded in a face-to-face manner.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: July 5, 2022
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Kun Zhang, Linchun Wu, Zhong Zhang, Wenxi Zhou, Zongliang Huo
  • Publication number: 20220208780
    Abstract: A 3D memory device includes a memory stack having a memory block. The memory block includes a first memory array structure, a staircase structure, a second memory array structure in a first lateral direction, and a plurality of fingers in a second lateral. The staircase structure includes a staircase zone and a bridge structure adjacent to the staircase zone in the second lateral direction. The 3D memory device also includes a source-select-gate (SSG) cut structure extending in a SSG of the memory stack and between adjacent ones of the plurality of fingers of the memory block. The SSG cut structure is between a first finger and a second finger, the first finger includes a string. The staircase zone includes a staircase conductively connected to memory cells in the string in each of the first memory array structure and the second memory array structure through the bridge structure.
    Type: Application
    Filed: January 29, 2021
    Publication date: June 30, 2022
    Inventor: Zhong ZHANG
  • Publication number: 20220208775
    Abstract: A 3D memory device includes a memory stack including a memory block. The memory block includes a first memory array structure, a staircase structure, a second memory array structure in a first lateral direction, and a plurality of strings in a second lateral direction. The staircase structure includes a staircase zone and a bridge structure adjacent to the staircase zone. The 3D memory device also includes a SSG cut structure. The SSG cut structure includes a first portion between a first string and a second string and extends in the bridge structure in the first lateral direction. The staircase zone includes a first staircase conductively connected to first memory cells in the first string through the bridge structure and a second staircase conductively connected to second memory cells in the second string in the first memory array structure through the bridge structure.
    Type: Application
    Filed: January 29, 2021
    Publication date: June 30, 2022
    Inventor: Zhong ZHANG
  • Publication number: 20220197401
    Abstract: A terminal control system and method, and a terminal device are provided. The terminal control system includes: a detection chip and at least one terminal key arranged on a side surface of a terminal device. The detection chip is connected to the terminal key. The terminal key is configured to generate an inductive capacitance and an interelectrode capacitance corresponding to an external control instruction, in response to a reception of the external control instruction. The detection chip is configured to detect the inductive capacitance and the interelectrode capacitance; determine inductive capacitance variation corresponding to the inductive capacitance and interelectrode capacitance variation corresponding to the interelectrode capacitance; determine a control type corresponding to the control instruction according to the inductive capacitance variation and the interelectrode capacitance variation, and trigger the terminal device to perform a control operation corresponding to the control type.
    Type: Application
    Filed: May 14, 2020
    Publication date: June 23, 2022
    Inventors: Tao CHENG, Zhong ZHANG, Jiantao CHENG, Liming DU, Hongjun SUN
  • Patent number: 11342264
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stack of word line layers and insulating layers that are stacked alternatingly over the substrate, and channel structures formed in a first array region and a second array region of the stack. The first array region and the second array region are positioned at opposing sides of the stack. A first staircase is formed in a connection region of the stack over the substrate, where the connection region is arranged between the first and second array regions. A second staircase is formed in the connection region of the stack over the substrate, and the connection region in the stack includes a separation region between the first and second staircases.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: May 24, 2022
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Zhongwang Sun, Zhong Zhang, Wenxi Zhou, Zhiliang Xia
  • Publication number: 20220157846
    Abstract: A 3D memory device includes a memory stack and a support structure. The memory stack, on a substrate, includes a core region and a non-core region neighboring the core region. The support structure extends in the non-core region and into the substrate. The support structure includes a first support portion and a second support portion over the first support portion. The first support portion has a stiffness higher than the second support portion.
    Type: Application
    Filed: December 10, 2020
    Publication date: May 19, 2022
    Inventors: Zhong Zhang, Yuhui Han, Wenxi Zhou
  • Publication number: 20220139837
    Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. The fabrication method includes disposing an alternating dielectric stack on a substrate, wherein the alternating dielectric stack having first and second dielectric layers alternatingly stacked on top of each other. Next, a plurality of contact openings can be formed in the alternating dielectric stack such that a dielectric layer pair can be exposed inside at least one of the plurality of contact openings. The method further includes forming a film stack of alternating conductive and dielectric layers by replacing the second dielectric layer with a conductive layer, and forming a contact structure to contact the conductive layer in the film stack of alternating conductive and dielectric layers.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Zhongwang SUN, Zhong ZHANG, Wenxi ZHOU, Lei LIU, Zhiliang XIA
  • Publication number: 20220139941
    Abstract: Embodiments of 3D memory devices having a concentric staircase structure and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory array structure and a concentric staircase structure in an intermediate of the memory array structure. The concentric staircase structure includes a plurality of concentric zones in a radial direction in a plan view. Each of the plurality of concentric zones includes a plurality of stairs in a tangential direction in the plan view.
    Type: Application
    Filed: January 12, 2021
    Publication date: May 5, 2022
    Inventors: Kun Zhang, Cuicui Kong, Zhong Zhang, Wenxi Zhou
  • Publication number: 20220130854
    Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack, a semiconductor layer, a supporting structure, a spacer structure, and a contact structure. The memory stack includes interleaved conductive layers and dielectric layers and includes a staircase region in a plan view. The semiconductor layer is in contact with the memory stack. The supporting structure overlaps the staircase region of the memory stack and is coplanar with the semiconductor layer. The supporting structure includes a material other than a material of the semiconductor layer. The spacer structure is outside the memory stack and is coplanar with the supporting structure and the semiconductor layer. The contact structure extends vertically and is surrounded by the spacer structure.
    Type: Application
    Filed: January 12, 2021
    Publication date: April 28, 2022
    Inventors: Cuicui Kong, Zhong Zhang, Linchun Wu, Kun Zhang, Wenxi Zhou
  • Publication number: 20220115322
    Abstract: A memory device includes a substrate; and a stack structure, including alternately arranged first dielectric layers and electrode layers. In a first lateral direction, the memory device includes an intermediate region and array regions. In a second lateral direction, the stack structure includes a first block and a second block, each including a wall-structure region. In the intermediate region, wall-structure regions of the first block and the second block are separated by a staircase structure. The memory device further includes a beam structure, located in the intermediate region and including at least a plurality of discrete first beam structures, each extending along the second lateral direction and connecting the wall-structure regions of the first block and the second block; and a plurality of second dielectric layers, located in the beam structure. In the first beam structures, the second dielectric layers is alternated with the first dielectric layers.
    Type: Application
    Filed: November 9, 2020
    Publication date: April 14, 2022
    Inventors: Zhong ZHANG, Kun ZHANG, Wenxi ZHOU, Zhiliang XIA
  • Publication number: 20220115392
    Abstract: A three-dimensional memory includes a stack structure, a dummy structure and a gate line slit. The stack structure includes gate line layers and isolation layers stacked alternatively in the vertical direction. The dummy structure includes a first dummy section and a second dummy section. The gate line slit has one end extending into a gap formed by at least one of the first dummy section or the second dummy section. At least one of the first dummy section and the second dummy section partially overlaps a projection of the gate line slit onto the horizontal plane to realize connection between the dummy structure and the gate line slit.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Inventors: Zhong Zhang, Yuhui Han, Cuicui Kong, Kun Zhang
  • Patent number: 11297708
    Abstract: The system for lighting control may include a non-transitory storage medium storing executable instructions for lighting control, a communication component operatively connected to the non-transitory storage medium, at least one imaging device configured to capture images related to an area, and one or more illuminating device configured to light the area. The system may also include at least one processor in communication with the non-transitory storage medium. When executing the set of instructions, the at least one processor may cause the system to obtain image data relating to an area captured by the at least imaging device and determine at least one parameter relating to at least one of the one or more illuminating devices. The system may further include a control component configured to operate the at least one of the one or more illuminating devices to light the area based on the determined at least one parameter.
    Type: Grant
    Filed: July 7, 2020
    Date of Patent: April 5, 2022
    Assignee: SHANGHAI TRUTHVISION INFORMATION TECHNOLOGY CO., LTD.
    Inventor: Zhong Zhang
  • Publication number: 20220102247
    Abstract: Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a method for forming a semiconductor device includes forming a spacer structure from a first surface of the base structure into the base structure, forming a first contact portion surrounded by the spacer structure, and forming a second contact portion in contact with the first contact portion. The second contact extends from a second surface of the base structure into the base structure.
    Type: Application
    Filed: December 13, 2021
    Publication date: March 31, 2022
    Inventors: Linchun Wu, Kun Zhang, Zhong Zhang, Wenxi Zhou, Zhiliang Xia