Patents by Inventor Zvonimir Z. Bandic

Zvonimir Z. Bandic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10459793
    Abstract: A data storage device may include a non-volatile memory array and a controller. The non-volatile memory array may include a plurality of dies. Each die of the plurality of data dies may include a plurality of words, where a word is an access unit of a die. The controller may be configured to store user data to a respective first word of at least a first die and a second die of the plurality of data dies. A page of user data may include the user data stored at the respective first words of the at least first die and second die. The controller may also be configured to store parity data to a first portion of a first word of a third die. The controller may be further configured to store metadata to a second portion of the first word of the third die.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: October 29, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Kiran Kumar Gunnam, Seung-Hwan Song
  • Patent number: 10423339
    Abstract: A method may include writing data to a hard drive. In some examples, the method may include receiving, by an extent allocator module, a command to write data. The command may include data and a logical block address (LBA) specified by the host. The method may also include mapping, by the extent allocator module, the LBA specified by the host to a drive LBA. The method may further include sending, from the extent allocator module, a command to write the data at the drive LBA.
    Type: Grant
    Filed: October 6, 2015
    Date of Patent: September 24, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Cyril Guyot, Adam C. Manzanares, Noah Watkins
  • Patent number: 10373528
    Abstract: The present disclosure generally relates to a method of burning a file in a memory device after the file has been read. Once a file has been read, an algorithm uses the memory device to create errors that the error correction code (ECC) cannot decode the error. In creating the error, the entire word line is destroyed physically rather than logically so that retrieving information from that particular word line is no longer possible. In creating the error, adjacent word lines are not affected. The error renders the file burned.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: August 6, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Robert Eugeniu Mateescu, Minghai Qin, Chao Sun
  • Patent number: 10360973
    Abstract: In this disclosure, data mapping based on three dimensional lattices that have an improved sum rate (i.e., lifetime capacity) with low read latency is disclosed. During the write, a memory location is written to multiple times prior to erasure. Specifically, for the first write, there are 4/3 bits per cell available for writing, which is about 10.67 kB per cell are used for data storage. Then, for the second write, there is one bit per cell, which is 8 kB per cell for data storage. If considering a block with 128 different cells and writing 32 kB of data, the first write results in 42.66 data writes while the second write results in 32 writes for a total of 74.66 writes. Previously, the number of writes for 32 kB would be 64 writes. Thus, by writing twice prior to erasure, more data can be stored.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: July 23, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Robert Eugeniu Mateescu, Minghai Qin, Chao Sun
  • Patent number: 10290353
    Abstract: NAND cell error remediation technologies are disclosed. The remediation technologies are applicable to 3D NAND. In one example, a storage device may include a processor and a memory device comprising NAND flash memory. The processor is configured to detect an error condition associated with a first page of the NAND flash memory, and determine whether the error condition is associated with a read disturbance or with a retention error. The processor is configured to initiate, if the error condition is associated with the read disturbance, a refresh operation with respect to the page to write data stored at the first page to a second page of the NAND flash memory, and initiate, if the error condition is associated with the retention error, a reprogramming operation with respect to the page to rewrite the data stored at the first page to the first page of the NAND flash memory.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: May 14, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Seung-Hwan Song, Viacheslav Anatolyevich Dubeyko, Zvonimir Z. Bandic
  • Patent number: 10290350
    Abstract: A first write operation is received. The first write operation includes a SET operation. The SET operation is configured to place a cell of the non-volatile memory (NVM) device in a relatively low-resistance state. A second write operation is received. A first electrical pulse is applied to a first cell of the NVM device. The first electrical pulse is applied to place the first cell in the relatively low-resistance state. A second electrical pulse is applied to a second cell of the NVM device. The second electrical pulse is applied before the first electrical pulse has concluded. The second cell and the first cell are both within a single tile of the NVM device.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: May 14, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Won Ho Choi, Jay Kumar
  • Patent number: 10290346
    Abstract: Aspects of the disclosure provide a method and a data storage apparatus for storing fractional bits per cell with low-latency read per page. In various embodiments, the memory cells are configured to store a fractional number of bits per cell using a multi-page construction with reduced number of read per page as compared to a single page construction. The data storage apparatus store data in a plurality of non-volatile memory (NVM) cells configured to store information in a plurality of pages, wherein each of the NVM cells is programmable to one of L program states for representing a fractional number of bits. The data storage apparatus reads a first part of the data from a first page of the plurality of pages by applying M number of read voltages to the plurality of NVM cells, wherein the M number of read voltages is less than L?1 program states.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: May 14, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Minghai Qin, Seung-Hwan Song
  • Patent number: 10283199
    Abstract: A storage device includes a cross-point non-volatile memory (NVM) device that includes a first subset of cells. Cells of the first subset of cells may share either a bitline or a wordline. There may be at least one buffer cell on a respective bitline or wordline between each adjacent pair of cells from the first subset of cells. The storage device includes a control module. The control module is configured to receive a set of I/O operations. The control module is configured to execute a first subset of the set of I/O operations in parallel across the first subset of cells of the cross-point memory component. The control module may execute the first subset of the set of I/O operations such that I/O operations are not executed at the respective buffer cells.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: May 7, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Won Ho Choi, Jay Kumar
  • Patent number: 10275175
    Abstract: Techniques for providing file system functionality over a PCIe interface are disclosed. In some embodiments, the techniques may be realized as a method for providing file system functionality over a PCIe interface including receiving from a host device a storage command, specially devised for such a standard protocol, at a PCIe-based device controller, parsing, using at least one computer processor of the PCIe-based device controller, the storage command, traversing, using PCIe-based device controller, one or more portions of file system metadata of an associated storage media device, wherein the PCIe-based device controller is configured to traverse the one or more portions of file system metadata based on the parsed storage command independent of any subsequent communication with the host device, and returning data to the host device.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: April 30, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Frank R. Chu, Qingbo Wang, Damien Cyril Daniel Le Moal
  • Patent number: 10243881
    Abstract: Embodiments described herein generally relate to the use of three-dimensional solid state memory structures, both volatile and non-volatile, utilizing a Network-on-Chip routing protocol which provide for the access of memory storage via a router. As such, data may be sent to and/or from memory storage as data packets on the chip. The Network-on-Chip routing protocol may be utilized to interconnect unlimited numbers of three-dimensional memory cell matrices, spread on a die, or multiple dies, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits include a reduction in total density as compared to two-dimensional solid state memory structures utilizing a Network-on-Chip routing protocol, improved signal integrity, larger die areas, improved bandwidths and higher frequencies of operation.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: March 26, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Luis Cargnini, Kurt Allan Rubin, Dejan Vucinic
  • Patent number: 10175890
    Abstract: The present disclosure generally relates to methods of reading data from a memory device using non-binary ECCs. The memory device includes multiple memory cells where each memory cell has multiple pages that are arranged in distinct layouts for physical addresses thereof. When a read request is received from a host device to obtain data from a specific page of a specific memory cell of a memory device, rather than reading the data from all pages of the memory cell, the data can be read from just the desired page and then decoded. Following decoding, the data can be delivered to the host device. Because only the data from a specific page of a memory cell is read, rather than the entire memory cell, the read latency is reduced when compared to reading the entire memory cell.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: January 8, 2019
    Assignee: Western Digital Technologies, Inc.
    Inventors: Zvonimir Z. Bandic, Kiran Kumar Gunnam, Minghai Qin
  • Patent number: 10157656
    Abstract: A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: December 18, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Jeffery Robinson Childress, Luiz M. Franca-Neto, Jordan Asher Katine, Neil Leslie Robertson
  • Patent number: 10152435
    Abstract: A system includes a bus, at least one processor coupled to the bus, and a storage device coupled to the bus. The storage device includes storage class memory, a buffer; and a controller. The controller is configured to receive an instruction to provide data to the bus. Responsive to receiving the instruction to provide data to the bus, the controller is configured to retrieve data from the storage class memory, update the buffer to represent the data retrieved from the storage class memory, and output, at the bus, an indication that data responsive to the instruction to provide data to the bus is available at the buffer. The at least one processor is configured to refrain from modifying local data corresponding to the instruction to provide data to the bus after the controller receives the instruction to provide data to the bus and before the controller outputs the indication.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: December 11, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Luis Vitorio Cargnini, Dejan Vucinic, Qingbo Wang
  • Publication number: 20180351577
    Abstract: Embodiments of a data storage device include a non-volatile memory and a controller coupled to the non-volatile memory. The controller includes a decoder configured to decode a non-binary code, such as a low-density parity-check (LDPC) code. The decoder decodes the code by generating variable-node-to-check-node message vectors and by generating check-node-to-variable-node message vectors. When generating variable-node-to-check-node message vectors, the decoder considering a first number and then a second greater number of components of the variable-node-to-check-node message vectors. Embodiments of a method of decoding non-binary codes, such as non-binary LDPC codes, include generating variable node message vectors and check node message vectors in logarithm form. The check node message vectors are generated at a first complexity less than a full complexity of considering all components of the variable node message vectors and generated at a second complexity greater than the first complexity.
    Type: Application
    Filed: May 30, 2017
    Publication date: December 6, 2018
    Inventors: Minghai QIN, Zvonimir Z. BANDIC, Dejan VUCINIC
  • Patent number: 10133625
    Abstract: A storage device may include a primary storage array comprising a plurality of memory devices, one or more parity memory devices, and a controller configured to store a block of data. The controller may be configured to store the block of data by at least: writing the block of data to the primary storage array, determining parity data for the block of data, and writing at least a portion of the determined parity data to the one or more parity memory devices.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: November 20, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Robert E. Mateescu, Seung-Hwan Song
  • Patent number: 10049076
    Abstract: The present disclosure relates to methods and systems for implementing a high-speed serial bus with inhomogeneous lane bundles and encodings. A system for transmitting information can include a bus with a plurality of lanes and a host in communication with a target. The host can run an application that writes data to and reads data from storage. The host can assign a first plurality of lanes and a first encoding to a first bundle and assign a second plurality of lanes and a second encoding to a second bundle. The host can also evaluate a bandwidth requirement for the read and write instructions and evaluate a bus performance. The host can also regroup the first bundle or the second bundle based on bandwidth requirements and bus performance and can assign a third plurality of lanes and a third encoding to the at least one of the first bundle and the second bundle.
    Type: Grant
    Filed: April 4, 2016
    Date of Patent: August 14, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Dejan Vucinic, Zvonimir Z. Bandic
  • Publication number: 20180218773
    Abstract: A storage device includes a cross-point non-volatile memory (NVM) device that includes a first subset of cells. Cells of the first subset of cells may share either a bitline or a wordline. There may be at least one buffer cell on a respective bitline or wordline between each adjacent pair of cells from the first subset of cells. The storage device includes a control module. The control module is configured to receive a set of I/O operations. The control module is configured to execute a first subset of the set of I/O operations in parallel across the first subset of cells of the cross-point memory component. The control module may execute the first subset of the set of I/O operations such that I/O operations are not executed at the respective buffer cells.
    Type: Application
    Filed: February 23, 2018
    Publication date: August 2, 2018
    Inventors: Zvonimir Z. Bandic, Won Ho Choi, Jay Kumar
  • Publication number: 20180211703
    Abstract: The present disclosure, in various embodiments, describes three-dimensional (3D) vertical resistive random access memory (ReRAM) structures. In one embodiment, a memory device includes a resistive memory element and a selector coupled in series with the resistive memory element. A turn-on voltage of the selector is greater than a bias voltage of the memory device in an unselected state such that the selector remains in a turn-off state when the memory device is unselected, and the selector is configured to have substantially the same resistance in both a forward bias direction and a reverse bias direction in a turn-on state.
    Type: Application
    Filed: May 5, 2017
    Publication date: July 26, 2018
    Inventors: Won Ho Choi, Jay Kumar, Daniel Bedau, Zvonimir Z. Bandic, Seung-Hwan Song
  • Patent number: 10025652
    Abstract: Embodiments of the present disclosure generally relate to an improved method and system for error correction in non-volatile memory cells. The method includes writing data to a first location in non-volatile memory from a block of user data stored in DRAM and verifying the written data matches the block of user data. If the written data fails verification, the method further includes writing an error location pointer indicative of one or more error locations in the first location to a second location in non-volatile memory. Writing the one or more error locations to the error location pointer includes verifying the written error location pointer matches an address of the one or more error locations in the first location to ensure integrity of the error location pointer. Use of the error location pointer results in non-volatile memory with increased data rate, decreased read latency and a low probability of data loss.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: July 17, 2018
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Zvonimir Z. Bandic, Kiran Kumar Gunnam, Robert Eugeniu Mateescu, Minghai Qin
  • Publication number: 20180197607
    Abstract: A first write operation is received. The first write operation includes a SET operation. The SET operation is configured to place a cell of the non-volatile memory (NVM) device in a relatively low-resistance state. A second write operation is received. A first electrical pulse is applied to a first cell of the NVM device. The first electrical pulse is applied to place the first cell in the relatively low-resistance state. A second electrical pulse is applied to a second cell of the NVM device. The second electrical pulse is applied before the first electrical pulse has concluded. The second cell and the first cell are both within a single tile of the NVM device.
    Type: Application
    Filed: February 20, 2018
    Publication date: July 12, 2018
    Inventors: Zvonimir Z. BANDIC, Won Ho CHOI, Jay KUMAR