Abstract: The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, wherein the second semiconductor structure includes a conductive through silicon via, a second bonding dielectric at a back surface of the second semiconductor structure, a second bonding metallization surrounded by the second bonding dielectric and directly contacting the second bonding dielectric, and a conductive through via over a second portion of the first semiconductor structure different from the first portion.

Abstract: A microelectronics package comprising a substrate, the substrate comprising a dielectric and at least first and second conductor level within the dielectric, where the first and second conductor levels are separated by at least one dielectric layer. The microelectronics package comprises an inductor structure that comprises a magnetic core. The magnetic core is at least partially embedded within the dielectric. The inductor structure comprises a first trace in the first conductor level, a second trace in the second conductor level, and a via interconnect connecting the first and second traces. The first trace and the second trace extend at least partially within the magnetic core.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to series inductors and methods of manufacture. A structure includes a plurality of wiring levels each of which include a wiring structure connected in series to one another. A second wiring level being located above a first wiring level of the plurality of wiring levels. A wiring structure on the second wiring level being at least partially outside boundaries of the wiring structure of the first wiring level.

Abstract: An electronic component includes an insulating layer, a low voltage conductor pattern formed inside the insulating layer, a high voltage conductor pattern formed inside the insulating layer such as to face the low voltage conductor pattern in an up/down direction, and a withstand voltage enhancement structure of conductive property formed inside the insulating layer and along the high voltage conductor pattern such as to protrude further outside than the low voltage conductor pattern in plan view.

Abstract: The technology relates to an integrated circuit (IC) package. The IC package may include a packaging substrate, an IC die, and an integrated voltage regulator die. The IC die may include a metal layer and a silicon layer. The metal layer may be connected to the packaging substrate. The integrated voltage regulator die may be positioned adjacent to the silicon layer and connected to the packaging substrate via one or more through mold vias or through dielectric vias. The IC die may be an application specific integrated circuit (ASIC) die.

Abstract: An illustrative embodiment of a packaged integrated circuit includes: an integrated circuit chip having a SerDes signal pad; and a package substrate having a core via and an arrangement of micro-vias connecting the SerDes signal pad to an external contact for solder ball connection to a PCB trace. The core via has a first parasitic capacitance, the solder ball connection is associated with a second parasitic capacitance, and the arrangement of micro-vias provides a pi-network inductance that improves connection impedance matching. An illustrative method embodiment includes: obtaining an expected impedance of the PCB trace; determining parasitic capacitances of a core via and a solder ball connection to the PCB trace; minimizing the core via capacitance; calculating a pi-network inductance that improves impedance matching with the PCB trace; and adjusting a micro-via arrangement between the core via and the solder ball connection to provide the pi-network inductance.

Abstract: An analog front-end (AFE) device and method for a high baud-rate receiver. The device can include an input matching network coupled to a first buffer device, which is coupled to a sampler array. The input matching network can include a first T-coil configured to receive a first input and a second T-coil configured to receive a second input. The first buffer device can include one or more buffers each having a bias circuit coupled to a first class-AB source follower and a second class-AB source follower. The sampling array can include a plurality of sampler devices configured to receive a multi-phase clocking signal. Additional optimization techniques can be used, such as having a multi-tiered sampler array and having the first buffer device configured with separate buffers for odd and even sampling phases. Benefits of this AFE configuration can include increased bandwidth, sampling rate, and power efficiency.

Abstract: A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.

Abstract: A low-resistance thick-wire integrated inductor may be formed in an integrated circuit (IC) device. The integrated inductor may include an elongated inductor wire defined by a metal layer stack including an upper metal layer, middle metal layer, and lower metal layer. The lower metal layer may be formed in a top copper interconnect layer, the upper metal layer may be formed in an aluminum bond pad layer, and the middle metal layer may comprise a copper tub region formed between the aluminum upper layer and copper lower layer. The wide copper region defining the middle layer of the metal layer stack may be formed concurrently with copper vias of interconnect structures in the IC device, e.g., by filling respective openings using copper electrochemical plating or other bottom-up fill process. The elongated inductor wire may be shaped in a spiral or other symmetrical or non-symmetrical shape.

Abstract: A microelectronic device has bump bonds and an inductor on a die. The microelectronic device includes first lateral conductors extending along a terminal surface of the die, wherein at least some of the first lateral conductors contact at least some of terminals of the die. The microelectronic device also includes conductive columns on the first lateral conductors, extending perpendicularly from the terminal surface, and second lateral conductors on the conductive columns, opposite from the first lateral conductors, extending laterally in a plane parallel to the terminal surface. A first set of the first lateral conductors, the conductive columns, and the second lateral conductors provide the bump bonds of the microelectronic device. A second set of the first lateral conductors, the conductive columns, and the second lateral conductors are electrically coupled in series to form the inductor. Methods of forming the microelectronic device are also disclosed.

Abstract: An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.

Abstract: Disclosed herein are peripheral inductors for integrated circuits (ICs), as well as related methods and devices. In some embodiments, an IC device may include a die having an inductor extending around at least a portion of a periphery of the die.

Abstract: A semiconductor device including: a semiconductor substrate; a seed layer that is formed on the semiconductor substrate; and wiring that is formed on the seed layer and includes parallel row portions that are arranged at intervals from each other, and in which penetration passages that penetrate the parallel row portions in a direction in which the parallel rows lined up are formed in the parallel row portions.

Abstract: Methods and apparatuses for use in tuning reactance are described. Open loop and closed loop control for tuning of reactances are also described. Tunable inductors and/or tunable capacitors may be used in filters, resonant circuits, matching networks, and phase shifters. Ability to control inductance and/or capacitance in a circuit leads to flexibility in operation of the circuit, since the circuit may be tuned to operate under a range of different operating frequencies.

Abstract: Embodiments disclosed herein include electronic packages with embedded magnetic materials and methods of forming such packages. In an embodiment, the electronic package comprises a package substrate, where the package substrate comprises a plurality of dielectric layers. In an embodiment a plurality of passive components is located in a first dielectric layer of the plurality of dielectric layers. In an embodiment, first passive components of the plurality of passive components each comprise a first magnetic material, and second passive components of the plurality of passive components each comprise a second magnetic material. In an embodiment, a composition of the first magnetic material is different than a composition of the second magnetic material.

Abstract: Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: An inlay for a chip card. The inlay includes a module coupling antenna for inductively coupling to a chip module antenna of a chip module and a card reader coupling antenna for inductively coupling to a reader antenna of an external card reader. The card reader coupling antenna is electrically connected to the module coupling antenna. The inlay also includes a chip capacitor module that is electrically connected to the card reader coupling antenna for enabling the card reader coupling antenna to resonate at a predetermined frequency. The chip capacitor module includes at least one passive component for storing electrical energy. The at least one passive component has a capacitance within a range from 40 picofarads to 140 picofarads and a major area that is smaller than 2.6 square millimetres.

Abstract: An electronic component includes an insulating layer, a low voltage conductor pattern formed inside the insulating layer, a high voltage conductor pattern formed inside the insulating layer such as to face the low voltage conductor pattern in an up/down direction, and a withstand voltage enhancement structure of conductive property formed inside the insulating layer and along the high voltage conductor pattern such as to protrude further outside than the low voltage conductor pattern in plan view.

Abstract: A semiconductor device including: a first silicon layer including a first single crystal silicon and a plurality of first transistors; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, a connection path from the fifth metal layer to the second metal layer, where the connection path includes a via disposed through the second level, where the via has a diameter of less than 450 nm, where the fifth metal layer includes a global power distribution grid, and where a typical thickness of the fifth metal layer is greater than a typical thickness of the second metal layer by at least 50%.

Abstract: It is highly desirable in electronic systems to conserve space on printed circuit boards (PCB). This disclosure describes voltage regulation in electronic systems, and more specifically to integrating voltage regulators and associated passive components into semiconductor packages with at least a portion of the circuits whose voltage(s) they are regulating.

Abstract: Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.

Abstract: An inlay for a chip card. The inlay includes a module coupling antenna for inductively coupling to a chip module antenna of a chip module and a card reader coupling antenna for inductively coupling to a reader antenna of an external card reader. The card reader coupling antenna is electrically connected to the module coupling antenna. The inlay also includes a chip capacitor module that is electrically connected to the card reader coupling antenna for enabling the card reader coupling antenna to resonate at a predetermined frequency. The chip capacitor module includes at least one passive component for storing electrical energy. The at least one passive component has a capacitance within a range from 40 picofarads to 140 picofarads and a major area that is smaller than 2.6 square millimetres.

Abstract: A packaged electronic device includes a die pad directly connected to a first set of conductive leads of a leadframe structure, a semiconductor die attached to the conductive die pad, a conductive support structure directly connected to a second set of conductive leads, and spaced apart from all other conductive structures of the leadframe structure. A magnetic assembly is attached to the conductive support structure, and a molded package structure that encloses the conductive die pad, the conductive support structure, the semiconductor die, the magnetic assembly and portions of the conductive leads, the molded package structure including a top side, and an opposite bottom side, wherein the lamination structure is centered between the top and bottom sides.

Abstract: A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.

Abstract: A package is disclosed. The package includes a base die. The base die includes voltage regulating circuitry and input and output (I/O) circuitry. The I/O circuitry surrounds the voltage regulating circuitry. The package also includes a top set of dies. The top set of dies includes a plurality of dies that include logic circuitry and a plurality of dies that include passive components. The plurality of dies that include passive components surround the plurality of dies that include logic circuitry. The plurality of dies that includes passive components is coupled to the logic circuitry and to the voltage regulating circuitry.

Abstract: Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.

Abstract: Embodiments disclosed herein include electronics packages with improved thermal pathways. In an embodiment, an electronics package includes a package substrate. In an embodiment, the package substrate comprises a plurality of backside layers, a plurality of front-side layers, and a core layer between the plurality of backside layers and the plurality of front-side layers. In an embodiment, an inductor is embedded in the plurality of backside layers. In an embodiment, a plurality of bumps are formed over the front-side layers and thermally coupled to the inductor. In an embodiment, the plurality of bumps are thermally coupled to the core layer by a plurality of vias.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate including a front surface and a back surface; a backside metallization layer formed over the semiconductor substrate, the backside metallization layer being closer to the back surface than to the front surface of the semiconductor substrate, at least a portion of the backside metallization layer forming an inductor structure; and an electrically non-conductive material formed in the semiconductor substrate, the electrically non-conductive material at least partially overlapping the inductor structure from a top view, and the electrically non-conductive material including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: Embodiments include an electronic package that includes a first layer that comprises a dielectric material and a second layer over the first layer, where the second layer comprises a magnetic material. In an embodiment, a third layer is formed over the second layer, where the third layer comprises a dielectric material. In an embodiment, the third layer entirely covers a first surface of the second layer. In an embodiment a first conductive layer and a second conductive layer are embedded within the second layer. In an embodiment, sidewalls of the first conductive layer and the second conductive layer are substantially vertical.

Abstract: A composite member (1) satisfies the following expressions. X/(E×|CTE(B)?CTE(A)|)?50, X/(E×|CTE(B)?CTE(C)|)?50, Y/|CTE(B)?CTE(A)|×L(BA)?50, and Y/|CTE(B)?CTE(C)|×L(BC)?50. X: shear bond strength (MPa) between the heat dissipating base substrate and heat generating member, Y: fracture elongation of the thermoconductive insulating adhesive film, E: modulus of elasticity (MPa) of the thermoconductive insulating adhesive film, CTE(A): linear expansion coefficient (° C.?1) of the heat dissipating base substrate, CTE(B): linear expansion coefficient (° C.?1) of the thermoconductive insulating adhesive film, CTE(C): linear expansion coefficient (° C.

Abstract: A semiconductor package may include a substrate, including an inductor array including inductor structures, and a semiconductor chip and a voltage regulator each on the substrate. Each of the inductor structures may include an input terminal, an output terminal, a coil between the input terminal and the output terminal, and conductive wirings. The inductor structures may be apart from one another in a second horizontal direction. Each of the coils may include a lower horizontal winding wound horizontally, an upper horizontal winding wound horizontally, and a conductive via. In a plan view, the coils may be arranged in zigzags, and the coils and the conductive wirings may be alternately arranged in the second horizontal direction.

Abstract: A microelectronics package comprises a substrate that comprises a dielectric and at least two conductor layers within the dielectric, and an inductor structure having a magnetic core at least partially within the dielectric and extending at least between a first conductor layer and a second conductor layer. The inductor structure comprises at least one conductor that extends horizontally at least partially within the magnetic core. The conductor extends in the z-direction within the magnetic core between the first conductor layer and the second conductor layer. One or more vias extend within the dielectric adjacent to the magnetic core between the first conductor layer and the second conductor layer. The conductor of the inductor has a length extending through the magnetic core that is greater than a width of the conductor.

Abstract: Embodiments include one or more air core inductors (ACIs) and a method of forming the ACIs. The ACI includes a first inductor loop on a substrate. The first inductor loop has a first line and a second line. The first line has a first thickness that is greater than a second thickness of the second line. The ACI also includes a dielectric over the substrate and the first and second lines. The first line has a top surface above a top surface of the second line. The ACI further includes a second inductor loop on the dielectric and the first inductor loop. The second inductor loop has is coupled to the top surface of the first line of the first inductor loop. The first inductor loop may also have a third thickness, where the third thickness is the distance between the top surfaces of the first and second line.

Abstract: In some examples, an electronic device comprises a first magnetic member, a first adhesive layer abutting the first magnetic member, a second magnetic member, a second adhesive layer abutting the second magnetic member, and a laminate member between the first and second adhesive layers. The laminate member comprises first and second transformer coils, an electromagnetic interference (EMI) shield coil, and a set of thermally conductive members coupled to the EMI shield coil and extending in three dimensions. At least some of the thermally conductive members extend vertically through a thickness of the laminate member so as to be exposed to top and bottom surfaces of the laminate member. The electronic device includes a thermally conductive component coupled to at least one thermally conductive member in the set of thermally conductive members.

Abstract: A patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer. The shielding layer includes a first main portion and a plurality of branch portions. The first main portion is T-shaped. The branch portions are connected to the first main portion.

Abstract: A capacitance sensing system for sensing frost and ice accumulation. The capacitance sensing system comprises a first capacitor formed by a portion of a metal heat exchanger and a sensor electrode electrically isolated from the metal heat exchanger, a tank oscillator comprising a second capacitor and an inductor connected in parallel with each other and coupled in parallel with the first capacitor, and a circuit coupled to the tank oscillator. The circuit coupled to the tank oscillator is configured to determine a resonant frequency of the tank oscillator, determine a capacitance value based on the resonant frequency of the tank oscillator, determine that the capacitance value is greater than a predefined threshold, and transmit a heater activation command in response to determining the capacitance value is greater than the predefined threshold.

Abstract: In one embodiment, a tuning network includes: a controllable capacitance; a first switch coupled between the controllable capacitance and a reference voltage node; a second switch coupled between the controllable capacitance and a third switch; the third switch coupled between the second switch and a second voltage node; a fourth switch coupled between the second voltage node and a first inductor; the first inductor having a first terminal coupled to the fourth switch and a second terminal coupled to at least the second switch; and a second inductor having a first terminal coupled to the second terminal of the first inductor and a second terminal coupled to the controllable capacitance.

Abstract: A semiconductor structure is provided. The semiconductor structure include a substrate and a first dielectric layer having at least one via over the substrate. The first dielectric layer includes a first portion having a first thickness and a second portion having a second thickness greater than the first thickness. The semiconductor structure further includes a second dielectric layer containing at least one first conductive line overlying the first portion of the first dielectric layer and at least one second conductive line overlying the second portion of the first dielectric layer. The at least one first conductive line includes a first conductive portion and a conductive cap, and the at least one second conductive line including a second conductive portion having a top surface coplanar with a top surface of the conductive cap.

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.

Abstract: A semiconductor package may include a composite magnetic inductor that is formed integral with the semiconductor substrate. The composite magnetic inductor may include a composite magnetic resin layer and a plurality of conductive layers arranged such that the composite magnetic resin layer is interleaved between successive conductive layers. The resultant composite magnetic inductor may be disposed between dielectric layers. A core layer may be disposed proximate the composite magnetic inductor. A build-up layer may be disposed proximate the core layer or proximate the composite magnetic inductor in a coreless semiconductor substrate. A semiconductor die may couple to the build-up layer. The composite magnetic inductor beneficially provides a greater inductance than external inductors coupled to the semiconductor package.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

Abstract: A portable communication device is provided, which includes a housing including a rear cover; a battery disposed in the housing; NFC circuitry; wireless charging circuitry; MST circuitry; an FPCB including a plurality of layers substantially parallel to each other, at least a portion of the FPCB being disposed between the battery and the rear cover; an NFC coil electrically connected with the NFC circuitry, the NFC coil including a first portion and a second portion formed at different layers of the FPCB; a wireless charging coil electrically connected with the wireless charging circuitry, the wireless charging coil including a third portion and a fourth portion formed at different layers of the FPCB; and an MST coil electrically connected with the MST circuitry, the MST coil including a fifth portion and a sixth portion at different layers of the FPCB.

Abstract: A package has a first region and a second region. The package includes a first die, a second die, an encapsulant, and an inductor. The second die is stacked on and bonded to the first die. The encapsulant is aside the second die. At least a portion of the encapsulant is located in the second region. The inductor is located in the second region. A metal density in the first region is greater than a metal density in the second region.

Abstract: A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

Abstract: One example discloses a near-field wireless device, including: a stack of layers distributed along a first axis; a first near-field antenna having a conductive surface and embedded in a first layer within the stack of layers; wherein the conductive surface is configured to carry non-propagating quasi-static near-field electric-induction signals for on-body near-field communications; a second near-field antenna having an inductive loop and embedded in a second layer within the stack of layers; wherein the inductive loop is configured to carry non-propagating quasi-static near-field magnetic-induction signals for off-body near-field communications; wherein the first and second layers are different layers; and wherein the first and second antennas are not in galvanic contact.

Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

Abstract: An inductor in a device package and a method of forming the inductor in the device package are described. The inductor includes a first conductive layer disposed on a substrate. The inductor also has one or more hybrid magnetic additively manufactured (HMAM) layers disposed over and around the first conductive layer to form one or more via openings over the first conductive layer. The inductor further includes one or more vias disposed into the one or more via openings, wherein the one or more vias are only disposed on the portions of the exposed first conductive layer. The inductor has a dielectric layer disposed over and around the one or more vias, the HMAM layers, and the substrate. The inductor also has a second conductive layer disposed over the one or more vias and the dielectric layer.