LIGHT-EMITTING DIODE DEVICE
A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
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1. Technical Field
A light-emitting diode device is disclosed.
2. Reference to Related Application
This application claims the right of priority based on TW application Ser. No. 096143129, filed Nov. 13, 2007, entitled “LIGHT-EMITTING DEVICE PACKAGE”, U.S. application Ser. No. 12/292,161, filed Nov. 13, 2008, entitled “LIGHT-EMITTING DEVICE PACKAGE”, and the contents of which are incorporated herein by reference.
3. Description of the Related Art
Generally, light-emitting diodes (LEDs) having transparent substrates are divided into face-up type and flip-chip type. For the face-up type, the light-emitting diodes are attached to carriers by gels or metals; for flip-chip type, the light-emitting diodes are attached to carriers by metals or solders with the attached surface as the light extraction surface of the light-emitting diode or the surface parallel to it. Because the light extracted from the light-emitting layer of the light-emitting diodes are 360 degree, the light emitting downward is generally reflected to the front of the light extraction side by the reflecting layers or extracted from the transparent substrates. The thickness of the transparent substrate should be properly adjusted so that the brightness of the light extraction is acceptable. Besides, when the size of the light-emitting diodes is larger, there are more reflected light passing through the multi-quantum well (MQW) in the light-emitting layer. The light efficiency is reduced because of light absorption.
A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
The accompanying drawings are included to provide easy understanding of the invention, and are incorporated herein and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to illustrate the principles of the invention.
Reference is made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
The material of the growth substrate can be transparent material such as Sapphire, ZnO, or AlN. The growth substrate can also be high thermal-dissipative materials such as diamond like carbon (DLC), graphite, Si, SiC, GaP, GaAs, or LiAlO2.
Referring to
The material of the support substrate can be transparent material or electrically insulating material such as sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, or AlN. The support substrate can also be high thermal-dissipative materials or reflective materials such as Cu, Al, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, diamond like carbon (DLC), graphite, carbon fiber, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), Si, IP, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO2, or LiAlO2.
The material of the transparent substrate can be sapphire, diamond, glass, epoxy, quartz, acrylate, ZnO, AlN, or SiC.
As shown in
The material of the connecting layer can be insulating material such as polyimide, BCB, PFCB, MgO, SU8, epoxy, Acrylic Resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, glass, Al2O3, SiOx, TiO2, SiNX, SOG, or other organic adhesive material. The material of the connecting layer can also be a conductive material such as ITO, MO, SnO, CTO, ATO, AZO, ZTO, IZO, Ta2O5, DLC, Cu, Al, Sn, Au, Ag, Ti, Ni, Pb, Cr, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, or Au alloy, and so on. The material of the connecting layer can also be a semiconductor layer such as ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, and so on.
The multi-LED structure 800 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of the light-emitting device 800 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701a and a second electrode (ex. n electrode) 701b of the carrier 701 respectively. Diffusers 702 are filled in the light-emitting diode device 30 to scatter the light emitted from the light-emitting device 800. The light (as the arrows indicating in
The multi-LED structure 900 is attached to the transparent substrate 404 and electrically connected to the circuit (not shown in the figure) on the transparent substrate 404 through directly bonding, solder bonding, and/or wire bonding. The transparent substrate 404 of a light-emitting device 900 is further attached to a carrier 701 having a reflective surface 703 by an adhering material 704 wherein the carrier 701 is a printed circuit board, a ceramics substrate, or a silicon substrate. In a preferred embodiment, the transparent substrate 404 is approximately perpendicular to the carrier 701. The circuit (not shown in the figure) of the transparent substrate 404 is electrically connected to a first electrode (ex. p electrode) 701a and a second electrode (ex. n electrode) 701b of the carrier 701 respectively. The diffusers 702 are filled in the light-emitting diode device 40 to scatter the light emitted from the light-emitting device 900. The light (as the arrows indicating in
Claims
1. A light-emitting device, comprising:
- a carrier comprising a platform;
- a transparent substrate formed on the platform comprising a first surface;
- a multi-LED structure, comprising: a first light-emitting structure formed on the first surface, comprising: a first first-type semiconductor layer; a first second-type semiconductor layer; and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, comprising: a second first-type semiconductor layer; a second second-type semiconductor layer; and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure;
- wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
2. The light-emitting device according to claim 1, wherein the angle between the first surface of the transparent substrate and the platform is 45-135 degree.
3. The light-emitting device according to claim 1, wherein the first light-emitting structure is electrically connected to the second light-emitting structure in series.
4. The light-emitting device according to claim 1, wherein the first light-emitting structure is electrically connected to the second light-emitting structure in parallel.
5. The light-emitting device according to claim 1, further comprising a reflective layer between the first light-emitting structure and the second light-emitting structure.
6. The light-emitting device according to claim 1, further comprising an adhering material adhering the transparent substrate to the platform.
7. The light-emitting device according to claim 1, further comprising a lens positioned over the carrier.
8. The light-emitting device according to claim 1, wherein the carrier further comprising a reflecting layer formed on the inner surface of the carrier.
9. The light-emitting device according to claim 1, wherein the transparent substrate further comprising a phosphor material.
10. The light-emitting device according to claim 1, wherein the carrier is a printed circuit board, a ceramics substrate, or a silicon substrate.
11. The light-emitting device according to claim 1, wherein the first light-emitting structure comprises GaN series material and the second light-emitting structure comprises AlGaInP series material.
12. The light-emitting device according to claim 1, wherein the multi-LED structure further comprises an intermediate substrate formed between the first light-emitting structure and the second light-emitting structure.
13. The light-emitting device according to claim 12, wherein the transparent substrate and/or the intermediate substrate comprises sapphire, diamond, glass, polymer, epoxy, quartz, acrylate, ZnO, AlN, or SiC.
14. The light-emitting device according to claim 1, wherein the multi-LED structure is separated from the platform by a predetermined distance.
15. The light-emitting device according to claim 1, wherein the connecting layer comprises a conductive material, a semiconductor material, or a non-conductive material.
Type: Application
Filed: Oct 26, 2011
Publication Date: Feb 16, 2012
Applicant: EPISTAR CORPORATION (Hsinchu)
Inventor: Chia-Liang HSU (Hsinchu)
Application Number: 13/282,317
International Classification: H01L 33/06 (20100101);