Abstract: A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a wall. The light conversion layer is disposed on the light-emitting element. The wall covers a sidewall of the light conversion layer and extends to a portion of an upper surface of the light conversion layer.

Abstract: A Light Emitting Diode (LED) array precursor is provided. The LED array precursor comprises a substrate having a substrate surface, a first LED stack, a p++ layer, a n++ layer and a second LED stack. The first LED stack is provided on a first portion of the substrate surface. The first LED stack comprises a plurality of first Group III-nitride layers defining a first semiconductor junction configured to output light having a first wavelength wherein a n-type side of the first semiconductor junction is orientated towards the substrate surface. The p++ layer is provided on the first LED stack, the p++ layer comprising a Group III-nitride. The n++ layer has a first portion covering the p++ layer of the first LED stack and a second portion covering a second portion of the substrate surface, wherein a tunnel junction is formed at an interface between the n++ layer and the p++ layer, the n++ layer comprising a Group III-nitride.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A display substrate includes a substrate and a light-emitting device layer which includes a first electrode layer, a light-emitting functional layer, and a second electrode layer that are sequentially stacked in a direction away from the substrate. The first electrode layer includes a reflective layer, an insulating layer, and a transparent conductive layer that are sequentially stacked in the direction away from the substrate. In a red sub-pixel region, a thickness of a first portion of the insulating layer is within a range of about 1000 ? to about 2500 ?. In a green sub-pixel region, a thickness of a second portion of the insulating layer is within a range of about 500 ? to about 2000 ?. In a blue sub-pixel region, a thickness of a third portion of the insulating layer is within a range of about 1500 ? to about 3000 ?.

Abstract: A quantum error correcting code with dynamically generated logical qubits is provided. When viewed as a subsystem code, the code has no logical qubits. Nevertheless, the measurement patterns generate logical qubits, allowing the code to act as a fault-tolerant quantum memory. Each measurement can be a two-qubit Pauli measurement.

Abstract: Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.

Abstract: In an element provided with a QD layer including QD phosphor particles, a first hole transport layer located between a first electrode and the QD layer is formed of a continuous film of a first carrier transport material. A second hole transport layer located between the first hole transport layer and the QD layer includes nanoparticles formed of a second carrier transport material.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.

Abstract: A barrier film for a wavelength conversion sheet, which can effectively suppress adhering of a light guide plate to the wavelength conversion sheet and suppresses damaging of a wavelength conversion sheet, a light guide plate, a diffusion plate, etc. A barrier film includes at least a barrier layer and base material layers. The barrier film has stacked on one surface thereof a mat layer including a resin and fillers which at least partially project from the mat layer. In a plan view, the proportion of the projecting fillers from the mat layer that are viewed as having a particle size at least twice the thickness of the mat layer is 20-80% of the total fillers projecting from the mat layer, and the total number of fillers in a square of 1 mm2 in the plan view of the mat layer is 1800 or more.

Abstract: Arrays of integrated analytical devices and their methods for production are provided. The arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The integrated devices allow the highly sensitive discrimination of optical signals using features such as spectra, amplitude, and time resolution, or combinations thereof. The arrays and methods of the invention make use of silicon chip fabrication and manufacturing techniques developed for the electronics industry and highly suited for miniaturization and high throughput.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: A light-emitting device includes doped layer arranged on a substrate. The doped layer is n-doped or p-doped. A multiple quantum well is arranged on the doped layer and includes a plurality of adjacent pairs of quantum wells and quantum barriers. An electron blocking layer is arranged on the multiple quantum well. The doped layer, the electron blocking layer, the quantum wells, and all of the quantum barriers except for the last quantum barrier include a first III-nitride alloy. The last quantum barrier includes a second III-nitride alloy that is different from the first III-nitride alloy. The second III-nitride alloy has a bandgap larger than a bandgap of the last quantum well and smaller than a bandgap of the electron blocking layer. An interface between the last quantum barrier and the electron blocking layer exhibits a polarization difference between 0 and 0.012 C/m2.

Abstract: A display device includes an electrode layer including a first electrode; and a second electrode; light emitting elements on the electrode layer; an insulating layer on the light emitting elements and including openings exposing at least one of ends of a part of the light emitting elements; and a contact electrode corresponding to each of the openings, the insulating layer includes a fixing pattern between the first electrode and the second electrode; a division pattern intersecting the fixing pattern; a connection pattern connecting a first end of the fixing pattern to a first end of the division pattern; and a base portion surrounding the fixing pattern, the division pattern, and the connection pattern, the base portion is connected to a second end of the fixing pattern and a second end of the division pattern and spaced apart from the connection pattern.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. The backplane can have a different coefficient of thermal expansion (CTE) than the array of LEDs. During bonding of the backplane to the array of LEDs, CTE mismatch can cause misalignment of bonding sites. The higher the bonding temperature, the greater the misalignment of bonding sites. Lower temperature bonding, using materials with lower melting or bonding temperatures, can be used to mitigate misalignment during bonding so that interconnects can be more closely spaced, which can allow LEDs to be more closely spaced, to enable a higher-resolution display.

Abstract: A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element, a first reflective film, and an insulating film. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material; the layer containing a light-emitting material includes a region interposed between the first electrode and the second electrode; the first electrode has a light-transmitting property; and the first electrode has a first thickness. The first electrode is interposed between a region of the first reflective film and the layer containing a light-emitting material, and the first reflective film has a second thickness. The insulating film includes a first opening portion, and the first opening portion overlaps with the first electrode. The insulating film has a first step-like cross-sectional shape, and the first step-like cross-sectional shape surrounds the first opening portion.

Abstract: A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.

Abstract: A package includes: a bottom portion having a mounting surface; and a lateral wall portion having a top surface and including: a lateral wall having a rectangular outer shape in a top view and surrounding the mounting surface, and a stepped portion formed along the lateral wall below the top surface. In the top view, the stepped portion includes a wide portion and a narrow portion that are two regions having different widths. The narrow portion is formed on a portion along a one side of an entire circumference of the lateral wall.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: A display device includes a plurality of pixels, a first bank defining light emission regions of the plurality of pixels, a first electrode and a second electrode which are spaced apart from each other in each of the light emission regions, and a plurality of light emitting elements disposed between the first electrode and the second electrode. The first bank, the first electrode, and the second electrode include a same material.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

Abstract: A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

Abstract: A method for producing a transferable array of light emitting devices includes forming a plurality of light emitting devices on a temporary substrate, forming at least one supporting member that is directly connected to a release layer of at least one of the light emitting devices, connecting a supporting substrate only with the at least one supporting member so that the at least one supporting member extends from the release layer of the at least one of the light emitting devices to the supporting substrate and so that the light emitting devices are spaced apart from the supporting substrate, and removing the temporary substrate. The transferable array produced by the method is also disclosed.

Abstract: Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, the light emitting layer, and the second layer can each comprise a superlattice.

Abstract: A light-emitting device includes: a first light-emitting element portion including: an n-side nitride semiconductor layer, a first light-emitting layer disposed on the n-side nitride semiconductor layer, and a first p-side nitride semiconductor layer disposed on the first light-emitting layer; a second light-emitting element portion including: a second light-emitting layer disposed on the n-side nitride semiconductor layer, and a second p-side nitride semiconductor layer disposed on the second light-emitting layer; an n-side electrode connected to the n-side nitride semiconductor layer; a first p-side electrode disposed on the first p-side nitride semiconductor layer via an upper n-type semiconductor layer disposed on the first p-side semiconductor layer; and a second p-side electrode connected to the second p-side nitride semiconductor layer. A composition of the second light-emitting layer is different from a composition of the first light-emitting layer.

Abstract: Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.

Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.

Abstract: Apparatus and associated methods relate to a graveside communications device exchanging multimedia between a grave and a user's communications device remote from the grave, activating an energy emitter configured by the graveside device to physically interact with the grave responsive to the remote user's activity, and sending to the user's communication device a live indication of the interaction. In an illustrative example, the device at the grave may include a video camera. The user's device may be configured to exchange multimedia with the graveside device. In some examples, the energy emitter may be a laser pointer directed at the grave. The remote user's activity may be, for example, the user1 s voice captured by the user's smartphone modulating the laser pointer light. Various examples may advantageously provide graveside telepresence, permitting a user physical interaction with a grave, and providing live indication of the interaction to the user.

Abstract: A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.

Abstract: A display panel includes: plurality of pixel circuits arranged on base substrate, at least one pixel circuit includes a drive transistor and a first switch transistor an active layer arranged on base substrate and including a first active portion and a second active portion, the first active portion configured to form a channel portion of the drive transistor, the second active portion is configured to form a second electrode connection portion of the first switch transistor; and a first conductive layer arranged on a side of the active layer away from the base substrate, the first conductive layer includes a first conductive portion, a portion of the first conductive portion used to form a gate electrode of the drive transistor another portion is electrically connected to the second active portion, and a channel length of the channel portion of the drive transistor is greater than a channel width.

Abstract: This specification discloses LEDs in which the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer. The reflector may, for example, be a conventional specular reflector disposed on or adjacent to a surface of the semiconductor diode structure. Alternatively, the reflector may or comprise a nanostructured layer. The reflector may comprise a nanostructured layer and a specular reflector, with the nanostructured layer disposed adjacent to the specular reflector between the specular reflector and the active region.

Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.

Abstract: A wearable display system includes a light projection system having one or more emissive microdisplays, e.g., micro-LED displays. The light projection system projects time-multiplexed left-eye and right-eye images, which pass through an optical router having a polarizer and a switchable polarization rotator. The optical router is synchronized with the generation of images by the light projection system to impart a first polarization to left-eye images and a second different polarization to right-eye images. Light of the first polarization is incoupled into an eyepiece having one or more waveguides for outputting light to one of the left and right eyes, while light of the second polarization may be incoupled into another eyepiece having one or more waveguides for outputting light to the other of the left and right eyes. Each eyepiece may output incoupled light with variable amounts of wavefront divergence, to elicit different accommodation responses from the user's eyes.

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a first pixel; the first pixel includes a first display element, a first color conversion layer, and a first absorption layer; the first display element emits first light; the first absorption layer overlaps with the first display element; and the first absorption layer absorbs the first light. Furthermore, the first color conversion layer is sandwiched between the first display element and the first absorption layer; the first color conversion layer converts the first light into second light; and the second light has a spectrum including a high proportion of light with a long wavelength compared with the first light.

Abstract: A quantum dot includes a core and a plurality of shell layers surrounding the core. The core has a band gap less than that of the outermost shell layer, and the outermost shell layer has a band gap less than that of a second shell layer. Thus, a light emitting device including the quantum dot according to an embodiment may have an improved lifespan of the device and excellent luminous efficiency characteristics.

Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.

Abstract: The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

Abstract: Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component is bonded to a second component using dielectric bonding and metal bonding. The first component includes an active light emitting layer between oppositely doped semiconductor layers. The second component includes a substrate having a different thermal expansion coefficient than the first component. First contacts of the first component are aligned to second contacts of the second component. A dielectric material of the first component is then bonded to a dielectric material of the second component. The metal bonding is performed between the first contacts and the second contacts, after the dielectric bonding, and using annealing. The bonded structure has a concave or convex shape before the metal bonding. Run-out between the first contacts and the second contacts is compensated through temperature-induced changes in a curvature of the bonded structure during the metal bonding.

Abstract: There is provided a display device. The display device includes an optical structure disposed to increase the amount of light emitted from a light-emitting diode; and a bank coupled with the optical structure.

Abstract: The present disclosure discloses a quantum dot light emitting device and application thereof. The quantum dot light emitting device includes: an anode and a cathode disposed oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot light emitting layer, wherein a material of the hole transport layer is a copper-based quantum dot with a short-chain ligand on a surface.

Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.

Abstract: A display panel and a manufacturing method of the display panel are provided. The display panel includes: a first substrate, a second substrate disposed opposite to the first substrate, a driving circuit disposed opposite to the first substrate and adjacent to a side of the second substrate, and a color resist layer disposed opposite to the driving circuit and adjacent to a side of the first substrate; wherein the color resist layer includes colorized color resist layers and a colorized quantum dot layer, and the driving circuit is a bottom-emission type light-emitting-diode (LED) driving circuit.

Abstract: A quantum dot display panel and a manufacturing method thereof are provided. The quantum dot display panel includes an array substrate; a luminescent layer disposed on the array substrate; an encapsulation layer disposed on the luminescent layer; and a color filter layer disposed on the encapsulation layer. The color filter layer includes a plurality of pixel areas. Each of the plurality of pixel areas includes a plurality of sub-pixel filter layers. Each of the sub-pixel filter layers is made of a quantum dot material. A color of a light excited by the quantum dot material is the same as a color of the sub-pixel filter layer. An upper surface of at least one of the sub-pixel filter layers forms a concave structure. The quantum dot display panel provided by the embodiment of the present disclosure enhances the light extraction rate and the display effect of the quantum dot display panel.

Abstract: The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

Abstract: Various embodiments include methods of fabricating an array of self-aligned vertical solid state devices and integrating the devices to a system substrate. The method of fabricating a self-aligned vertical solid state device comprising: providing a semiconductor substrate, depositing a plurality of device layers on the semiconductor substrate, depositing an ohmic contact layer on an upper surface of one of the plurality of device layers, wherein the device layers comprises an active layer and a doped conductive layer, forming a patterned thick conductive layer on the ohmic contact layer; and selectively etching down the doped conductive layer that does not substantially etch the active layer.

Abstract: The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.