Abstract: This disclosure is related to post processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structure such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. In another example, dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with the transferred micro devices. In another example, color conversion layers are integrated into the system substrate to create different output from the micro devices.

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

Abstract: Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

Abstract: A time of flight system may include one or more microLEDs and a photodetector monolithically integrated with integrated circuitry of the time of flight system. The microLEDs may be doped to provide increased speed of operation.

Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

Abstract: The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength.

Abstract: A light emitting element includes a first light emitting part having a first active layer, a tunnel junction part, and a second light emitting part having a second active layer. The first active layer includes a plurality of first well layers, and a first barrier layer positioned between two adjacent first well layers among the first well layers. The second active layer includes a plurality of second well layers, and a second barrier layer positioned between two adjacent second well layers among the second well layers. The second barrier layer includes a nitride semiconductor layer that contains aluminum and gallium, and has an aluminum composition ratio higher than an aluminum composition ratio of the first barrier layer. An aluminum composition ratio peak of the second barrier layer is located on a first light emitting part side of the second barrier layer.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1?1 and 0?y1<1. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A display panel includes a substrate, light-emitting diodes, and a cured opaque encapsulant layer. The light-emitting diodes are disposed on a first surface of the substrate. The cured opaque encapsulant layer is disposed on the first surface and a side surface of the substrate, and surrounds the light emitting diodes. A second surface of the cured opaque encapsulant layer facing away from the substrate is a rough surface.

Abstract: An optoelectronic device includes a substrate, at least one first light-emitting diode and at least one second light-emitting diode, each first light-emitting diode having a first primary doped semiconductor portion, a first secondary active semiconductor portion, and a first tertiary doped semiconductor portion. Each second light-emitting diode includes a second primary doped semiconductor portion, a second secondary active semiconductor portion, and a second tertiary doped semiconductor portion. A first external lateral portion is configured to allow the first atomic species to diffuse until the first secondary active semiconductor portion reaches an atomic concentration of indium between 13% and 20%. A second external lateral portion is configured to allow the first atomic species to diffuse until the second secondary active semiconductor portion reaches an atomic concentration of indium between 20% and 40%.

Abstract: The disclosure provides an electronic device which includes a substrate structure, a driving component, and a conductive pattern. The driving component and the conductive pattern are formed on the substrate structure, and the thickness of the conductive pattern is greater than or equal to 0.5 ?m and less than or equal to 15 ?m.

Abstract: A laterally heterogenous wavelength-converting optical element includes pixel regions surrounded by border regions; each includes down-converting phosphor particles bound by a coating or solid medium. The pixel regions are aligned with LEDs of an array. The phosphor regions differ with respect to one or more of compositions, particle sizes, coating thicknesses, refractive indices, or voids (size, number density, or volume fraction). Those difference(s) can result in the border regions exhibiting larger optical scattering, which can improve contrast of down-converted light emitted by adjacent pixels of the array.

Abstract: A semiconductor structure comprising a matrix having a first cubic Group-III nitride with a first band gap, and a second cubic Group-III nitride having a second band gap and forming a region embedded within the matrix. The second cubic Group-III nitride comprises an alloying material which reduces the second band gap relative to the first band gap, a quantum wire is defined by a portion within the region embedded within the matrix, the portion forming a one-dimensional charge-carrier confinement channel, wherein the quantum wire is operable to exhibit emission luminescence which is optically polarised.

Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal dir

Abstract: A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a wall. The light conversion layer is disposed on the light-emitting element. The wall covers a sidewall of the light conversion layer and extends to a portion of an upper surface of the light conversion layer.

Abstract: A Light Emitting Diode (LED) array precursor is provided. The LED array precursor comprises a substrate having a substrate surface, a first LED stack, a p++ layer, a n++ layer and a second LED stack. The first LED stack is provided on a first portion of the substrate surface. The first LED stack comprises a plurality of first Group III-nitride layers defining a first semiconductor junction configured to output light having a first wavelength wherein a n-type side of the first semiconductor junction is orientated towards the substrate surface. The p++ layer is provided on the first LED stack, the p++ layer comprising a Group III-nitride. The n++ layer has a first portion covering the p++ layer of the first LED stack and a second portion covering a second portion of the substrate surface, wherein a tunnel junction is formed at an interface between the n++ layer and the p++ layer, the n++ layer comprising a Group III-nitride.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A display substrate includes a substrate and a light-emitting device layer which includes a first electrode layer, a light-emitting functional layer, and a second electrode layer that are sequentially stacked in a direction away from the substrate. The first electrode layer includes a reflective layer, an insulating layer, and a transparent conductive layer that are sequentially stacked in the direction away from the substrate. In a red sub-pixel region, a thickness of a first portion of the insulating layer is within a range of about 1000 ? to about 2500 ?. In a green sub-pixel region, a thickness of a second portion of the insulating layer is within a range of about 500 ? to about 2000 ?. In a blue sub-pixel region, a thickness of a third portion of the insulating layer is within a range of about 1500 ? to about 3000 ?.

Abstract: A quantum error correcting code with dynamically generated logical qubits is provided. When viewed as a subsystem code, the code has no logical qubits. Nevertheless, the measurement patterns generate logical qubits, allowing the code to act as a fault-tolerant quantum memory. Each measurement can be a two-qubit Pauli measurement.

Abstract: Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.

Abstract: In an element provided with a QD layer including QD phosphor particles, a first hole transport layer located between a first electrode and the QD layer is formed of a continuous film of a first carrier transport material. A second hole transport layer located between the first hole transport layer and the QD layer includes nanoparticles formed of a second carrier transport material.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.

Abstract: A barrier film for a wavelength conversion sheet, which can effectively suppress adhering of a light guide plate to the wavelength conversion sheet and suppresses damaging of a wavelength conversion sheet, a light guide plate, a diffusion plate, etc. A barrier film includes at least a barrier layer and base material layers. The barrier film has stacked on one surface thereof a mat layer including a resin and fillers which at least partially project from the mat layer. In a plan view, the proportion of the projecting fillers from the mat layer that are viewed as having a particle size at least twice the thickness of the mat layer is 20-80% of the total fillers projecting from the mat layer, and the total number of fillers in a square of 1 mm2 in the plan view of the mat layer is 1800 or more.

Abstract: Arrays of integrated analytical devices and their methods for production are provided. The arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The integrated devices allow the highly sensitive discrimination of optical signals using features such as spectra, amplitude, and time resolution, or combinations thereof. The arrays and methods of the invention make use of silicon chip fabrication and manufacturing techniques developed for the electronics industry and highly suited for miniaturization and high throughput.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: A light-emitting device includes doped layer arranged on a substrate. The doped layer is n-doped or p-doped. A multiple quantum well is arranged on the doped layer and includes a plurality of adjacent pairs of quantum wells and quantum barriers. An electron blocking layer is arranged on the multiple quantum well. The doped layer, the electron blocking layer, the quantum wells, and all of the quantum barriers except for the last quantum barrier include a first III-nitride alloy. The last quantum barrier includes a second III-nitride alloy that is different from the first III-nitride alloy. The second III-nitride alloy has a bandgap larger than a bandgap of the last quantum well and smaller than a bandgap of the electron blocking layer. An interface between the last quantum barrier and the electron blocking layer exhibits a polarization difference between 0 and 0.012 C/m2.

Abstract: A display device includes an electrode layer including a first electrode; and a second electrode; light emitting elements on the electrode layer; an insulating layer on the light emitting elements and including openings exposing at least one of ends of a part of the light emitting elements; and a contact electrode corresponding to each of the openings, the insulating layer includes a fixing pattern between the first electrode and the second electrode; a division pattern intersecting the fixing pattern; a connection pattern connecting a first end of the fixing pattern to a first end of the division pattern; and a base portion surrounding the fixing pattern, the division pattern, and the connection pattern, the base portion is connected to a second end of the fixing pattern and a second end of the division pattern and spaced apart from the connection pattern.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. The backplane can have a different coefficient of thermal expansion (CTE) than the array of LEDs. During bonding of the backplane to the array of LEDs, CTE mismatch can cause misalignment of bonding sites. The higher the bonding temperature, the greater the misalignment of bonding sites. Lower temperature bonding, using materials with lower melting or bonding temperatures, can be used to mitigate misalignment during bonding so that interconnects can be more closely spaced, which can allow LEDs to be more closely spaced, to enable a higher-resolution display.

Abstract: A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element, a first reflective film, and an insulating film. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material; the layer containing a light-emitting material includes a region interposed between the first electrode and the second electrode; the first electrode has a light-transmitting property; and the first electrode has a first thickness. The first electrode is interposed between a region of the first reflective film and the layer containing a light-emitting material, and the first reflective film has a second thickness. The insulating film includes a first opening portion, and the first opening portion overlaps with the first electrode. The insulating film has a first step-like cross-sectional shape, and the first step-like cross-sectional shape surrounds the first opening portion.

Abstract: A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.

Abstract: A package includes: a bottom portion having a mounting surface; and a lateral wall portion having a top surface and including: a lateral wall having a rectangular outer shape in a top view and surrounding the mounting surface, and a stepped portion formed along the lateral wall below the top surface. In the top view, the stepped portion includes a wide portion and a narrow portion that are two regions having different widths. The narrow portion is formed on a portion along a one side of an entire circumference of the lateral wall.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: A display device includes a plurality of pixels, a first bank defining light emission regions of the plurality of pixels, a first electrode and a second electrode which are spaced apart from each other in each of the light emission regions, and a plurality of light emitting elements disposed between the first electrode and the second electrode. The first bank, the first electrode, and the second electrode include a same material.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

Abstract: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

Abstract: A method for producing a transferable array of light emitting devices includes forming a plurality of light emitting devices on a temporary substrate, forming at least one supporting member that is directly connected to a release layer of at least one of the light emitting devices, connecting a supporting substrate only with the at least one supporting member so that the at least one supporting member extends from the release layer of the at least one of the light emitting devices to the supporting substrate and so that the light emitting devices are spaced apart from the supporting substrate, and removing the temporary substrate. The transferable array produced by the method is also disclosed.

Abstract: Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, the light emitting layer, and the second layer can each comprise a superlattice.

Abstract: A light-emitting device includes: a first light-emitting element portion including: an n-side nitride semiconductor layer, a first light-emitting layer disposed on the n-side nitride semiconductor layer, and a first p-side nitride semiconductor layer disposed on the first light-emitting layer; a second light-emitting element portion including: a second light-emitting layer disposed on the n-side nitride semiconductor layer, and a second p-side nitride semiconductor layer disposed on the second light-emitting layer; an n-side electrode connected to the n-side nitride semiconductor layer; a first p-side electrode disposed on the first p-side nitride semiconductor layer via an upper n-type semiconductor layer disposed on the first p-side semiconductor layer; and a second p-side electrode connected to the second p-side nitride semiconductor layer. A composition of the second light-emitting layer is different from a composition of the first light-emitting layer.

Abstract: Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.

Abstract: Apparatus and associated methods relate to a graveside communications device exchanging multimedia between a grave and a user's communications device remote from the grave, activating an energy emitter configured by the graveside device to physically interact with the grave responsive to the remote user's activity, and sending to the user's communication device a live indication of the interaction. In an illustrative example, the device at the grave may include a video camera. The user's device may be configured to exchange multimedia with the graveside device. In some examples, the energy emitter may be a laser pointer directed at the grave. The remote user's activity may be, for example, the user1 s voice captured by the user's smartphone modulating the laser pointer light. Various examples may advantageously provide graveside telepresence, permitting a user physical interaction with a grave, and providing live indication of the interaction to the user.

Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.

Abstract: A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.

Abstract: A display panel includes: plurality of pixel circuits arranged on base substrate, at least one pixel circuit includes a drive transistor and a first switch transistor an active layer arranged on base substrate and including a first active portion and a second active portion, the first active portion configured to form a channel portion of the drive transistor, the second active portion is configured to form a second electrode connection portion of the first switch transistor; and a first conductive layer arranged on a side of the active layer away from the base substrate, the first conductive layer includes a first conductive portion, a portion of the first conductive portion used to form a gate electrode of the drive transistor another portion is electrically connected to the second active portion, and a channel length of the channel portion of the drive transistor is greater than a channel width.

Abstract: This specification discloses LEDs in which the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer. The reflector may, for example, be a conventional specular reflector disposed on or adjacent to a surface of the semiconductor diode structure. Alternatively, the reflector may or comprise a nanostructured layer. The reflector may comprise a nanostructured layer and a specular reflector, with the nanostructured layer disposed adjacent to the specular reflector between the specular reflector and the active region.

Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.