Incoherent Light Emitter Patents (Class 257/13)
  • Patent number: 10998481
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: May 4, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • Patent number: 10988686
    Abstract: Disclosed is a luminescent particle including a first material, wherein the luminescent particle includes at least one particle including a second material and at least one nanoparticle dispersed in the second material; wherein the first material and the second material have a bandgap superior or equal to 3 eV; and wherein the luminescent particle is a colloidal particle. Also disclosed is a light emitting material, a support and an optoelectronic device.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: April 27, 2021
    Assignee: NEXDOT
    Inventors: Michele D'amico, Alexis Kuntzmann, Robin Faideau
  • Patent number: 10985259
    Abstract: GaN HEMT device structures and methods of fabrication are provided. A masking layer forms a p-dopant diffusion barrier and selective growth of p-GaN in the gate region, using low temperature processing, reduces deleterious effects of out-diffusion of p-dopant into the 2DEG channel. A structured AlxGa1-xN barrier layer includes a first thickness having a first Al %, and a second thickness having a second Al %, greater than the first Al %. At least part of the second thickness of the AlxGa1-xN barrier layer in the gate region is removed, before selective growth of p-GaN in the gate region. The first Al % and first thickness are selected to determine the threshold voltage Vth and the second Al % and second thickness are selected to determine the Rdson and dynamic Rdson of the GaN HEMT, so that each may be separately determined to improve device performance, and provide a smaller input FOM (Figure of Merit).
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: April 20, 2021
    Assignee: GaN Systems Inc.
    Inventor: Thomas Macelwee
  • Patent number: 10985285
    Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: April 20, 2021
    Assignee: The Regents of the University of California
    Inventors: Benjamin P. Yonkee, Asad J. Mughal, David Hwang, Erin C. Young, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 10978660
    Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: April 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Young Chung, Eun Joo Jang, Oul Cho, Hyun A Kang, Tae Hyung Kim, Yun Sung Woo, Jeong Hee Lee
  • Patent number: 10978618
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: April 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JuHeon Yoon, Jung Hwan Kil, Tae Hun Kim, Hwa Ryong Song, Jae In Sim
  • Patent number: 10971653
    Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: April 6, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Alexander Tonkikh, Peter Stauss
  • Patent number: 10971649
    Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: April 6, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Ho Na, Oh Min Kwon, June O Song, Jeong Tak Oh
  • Patent number: 10964842
    Abstract: The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: March 30, 2021
    Assignee: Samsung Display Co., Ltd.
    Inventor: Yeon Goog Sung
  • Patent number: 10964844
    Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: March 30, 2021
    Assignee: FACEBOOK TECHNOLOGIES, LLC
    Inventor: Stephan Lutgen
  • Patent number: 10957814
    Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: March 23, 2021
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Lung Tsai, Hsueh-Hsing Liu
  • Patent number: 10950744
    Abstract: A light receiving element is obtained by: forming a first mask having a first opening and a second opening; performing etching by using the first mask, to allow the etching to progress at a higher rate in the second opening than in the first opening; forming a second mask having a third opening and a fourth opening; performing etching by using the second mask, to form a mesa in a region interposed by the third opening, and an n-type contact region in the fourth opening; and forming a first electrode on the mesa and a second electrode on the n-type contact region, the first electrode being electrically connected to the third layer, the second electrode being electrically connected to the first layer, wherein a region covered with the first mask and exposed through the fourth opening of the second mask turns into the n-type contact region after the etching using the second mask.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: March 16, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Daisuke Kimura, Sundararajan Balasekaran
  • Patent number: 10941338
    Abstract: Highly stable films containing semiconductor nanoparticles (“quantum dots”) are prepared from resins containing a fast-curing inner phase having a high glass transition temperature (Tg) and certain inner phase/outer phase combinations. The resins may comprise an inner phase and outer phase (but may appear to be a single phase due to their homogeneous appearance when viewed using an optical microscope). The method provides a highly scalable and cost-effective procedure for preparing films that are resistant to light, elevated temperatures, moisture, and oxygen.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: March 9, 2021
    Assignee: Nanoco Technologies Ltd.
    Inventors: Amilcar Pillay Narrainen, Cong-Duan Vo, Imad Naasani, Abu Mohammad Imroz Ali
  • Patent number: 10944026
    Abstract: A semiconductor light emitting device includes: an n-type clad layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material containing silicon (Si); an intermediate layer provided on the n-type clad layer and containing Si; an active layer of an AlGaN-based semiconductor material provided on the intermediate layer; and a p-type semiconductor layer provided on the active layer. A distribution of an Si concentration in a direction in which the n-type clad layer, the intermediate layer, and the active layer are stacked has a local peak at least at a position of the intermediate layer.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: March 9, 2021
    Assignee: Nikkiso Co., Ltd.
    Inventors: Yusuke Matsukura, Cyril Pernot
  • Patent number: 10937649
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 2, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 10930889
    Abstract: A light-emitting device includes: a first electrode; a second electrode; and an organic layer that is provided between the first electrode and the second electrode and is formed by stacking a first light-emitting layer and a second light-emitting layer in order from the first electrode side, in which light emitted from the organic layer is reflected by an interface between the first light-emitting layer and the first electrode, passes through the second electrode, and is emitted to the outside of the light-emitting device, a first light-transmitting layer, a second light-transmitting layer, and a third light-transmitting layer are provided on a side of the second light-emitting layer opposite to the first light-emitting layer in order from the second light-emitting layer side, and predetermined conditions are satisfied.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: February 23, 2021
    Assignee: Sony Corporation
    Inventor: Toshihiro Fukuda
  • Patent number: 10920957
    Abstract: In an embodiment, a light source module may include a substrate, a light emitter comprising a light source disposed on one surface of the substrate and including an array of light emitting elements configured to emit light, a support disposed on the one surface of the substrate and accommodating at least a portion of the light emitter, and a transparent member comprising transparent material disposed over the support. The transparent member may include a pattern layer disposed on a first surface of the transparent member and configured to change a pattern of the light output from the light emitting elements, and a first meta-surface disposed on a second surface of the transparent member and including a plurality of first unit structures configured to change an angle of the light that passed through the pattern layer.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: February 16, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yongchan Keh, Byeonghoon Park, Youngkwon Yoon
  • Patent number: 10923619
    Abstract: A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. Each stress control layer includes stress control regions separated from adjacent stress control regions by a predetermined spacing. The stress control layer induces one of a tensile stress and a compressive stress in an adjacent semiconductor layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: February 16, 2021
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
  • Patent number: 10923629
    Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: February 16, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Alexander Tonkikh, Peter Stauss
  • Patent number: 10910793
    Abstract: A laser or light emitter for operation at a cryogenic temperature includes a single quantum well layer, an n-type barrier layer directly on a first surface of the single quantum well layer, and a p-type barrier layer directly on a second surface of the single quantum well layer opposite the first surface of the single quantum well layer. The single quantum well layer is between the p-type barrier layer and the n-type barrier layer and the compositions of the n-type barrier layer and the p-type barrier layer are graded.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: February 2, 2021
    Assignee: HRL Laboratories, LLC
    Inventors: Daniel Yap, Rongming Chu, Andrew Pan
  • Patent number: 10903195
    Abstract: A manufacturing method of a micro-LED display device comprises forming a plurality of thin-film transistor array areas that includes a plurality of thin-film transistor arrays on a first substrate; forming a plurality of micro-LED array areas that includes a plurality of micro-LED arrays on a second substrate; transferring the plurality of micro-LED array areas that correspond to the plurality of thin-film transistor array areas onto the first substrate; forming a bank film on a third substrate over the first substrate; patterning the bank film to form a first bank layer that corresponds to a boundary area between the plurality of micro-LED arrays and a second bank layer that corresponds to an edge area of the plurality of micro-LED array areas, to form a pixel area and a pixel array area, and to remove the bank film in a boundary area between the second bank layers adjacent to each other; cutting the third substrate and the first substrate along a scribe zone that is set in a boundary area between the second
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: January 26, 2021
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Wonjin Choi, Geesung Chae
  • Patent number: 10903404
    Abstract: An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and comprises a second reg
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: January 26, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Seung Hwan Kim, Won Ho Kim, Chong Cook Kim, Deok Won Seo, Yeo Jae Yoon, Kwang Ki Choi
  • Patent number: 10892358
    Abstract: An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, an insulating doped region disposed in the gallium nitride layer and the aluminum gallium nitride layer, and two sidewall insulating structures disposed at two sides of the insulating doped region respectively.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: January 12, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Wen-Jung Liao
  • Patent number: 10886442
    Abstract: A phosphor containing particle including a core portion which is a particulate matter of resin including a constitutional unit derived from an ionic liquid with a semiconductor nanoparticle phosphor dispersed therein and a shell portion which is a matter in a form of a layer of resin which includes a constitutional unit derived from an ionic liquid and coats at least a portion of the core portion, and a phosphor containing particle including a particulate matter of resin including a constitutional unit derived from an ionic liquid with a semiconductor nanoparticle phosphor dispersed therein and a metal oxide layer coating at least a portion of the particulate matter of resin. A light emitting device including a light source and a wavelength converter in which phosphor containing particles are dispersed in a translucent medium, and a phosphor containing sheet in which phosphor containing particles are dispersed in a sheet-shaped translucent medium.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: January 5, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Tatsuya Ryohwa, Kanako Nakata, Hiroshi Fukunaga, Makoto Izumi
  • Patent number: 10886161
    Abstract: A method for manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including first dopant atoms and second dopant atoms, and forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium (Ge) layer may include the first dopant atoms diffused from the first substrate by growth temperature in the forming step. Additionally, the method for manufacturing a semiconductor device may further include annealing after growth of the germanium (Ge) layer so that the germanium (Ge) layer may include second dopant atoms.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: January 5, 2021
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hyung-jun Kim, Sanghyeon Kim, Hansung Kim, Seong Kwang Kim, Hyeong Rak Lim
  • Patent number: 10879422
    Abstract: A light emitting element includes: a first conductivity type semiconductor rod having a plurality of side surfaces arranged to form a polygonal column shape; an active layer formed of a semiconductor and covering the side surfaces; and a second conductive type semiconductor layer covering the active layer. The active layer includes a plurality of well layers respectively disposed over at least two adjacent side surfaces among the plurality of side surfaces. Adjacent well layers among the plurality of well layers are separated from each other along a ridge line where the at least two adjacent side surfaces are in contact with each other. The active layer further includes a ridge portion formed of a semiconductor and disposed on the ridge line, the ridge portion connecting the adjacent well layers. A bandgap of the ridge portion is wider than a bandgap of each of the plurality of well layers.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: December 29, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Atsuo Michiue
  • Patent number: 10879491
    Abstract: A display apparatus includes a substrate including a first area, a second area surrounding the first area, and a third area between the first area and the second area. A plurality of display elements disposed in the second area include a first display element and a second display element spaced apart from each other. A thin-film encapsulation layer includes an organic encapsulation layer covering the plurality of display elements. An inorganic encapsulation layer is on the organic encapsulation layer. A planarization layer partially covers the thin-film encapsulation layer in the third area. The inorganic encapsulation layer includes a first surface facing the planarization layer and a second surface facing in an opposite direction. The first surface has a roughness that is greater than a roughness of the second surface. In addition, other various embodiments may be provided.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: December 29, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Inkyung Yoo, Heena Kim, Youngseok Baek
  • Patent number: 10879423
    Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: December 29, 2020
    Assignees: PANASONIC CORPORATION, RIKEN
    Inventors: Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Hideki Hirayama
  • Patent number: 10873019
    Abstract: A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: December 22, 2020
    Assignee: Equal1.Labs Inc.
    Inventors: Dirk Robert Walter Leipold, George Adrian Maxim, Michael Albert Asker
  • Patent number: 10873005
    Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: December 22, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Youn Joon Sung, Yong Gyeong Lee, Min Sung Kim, Su Ik Park
  • Patent number: 10873048
    Abstract: A quantum-dot (QD) light emitting diode and a quantum-dot light emitting display device are disclosed. The QD light emitting diode includes first and second electrodes facing each other; a QD emitting material layer between the first and second electrodes and including a QD; a first charge auxiliary layer between the first electrode and the QD emitting material layer; and a second charge auxiliary layer between the QD emitting material layer and the second electrode, wherein the QD includes a core, a shell surrounding the core and a ligand contacting a portion of the shell, and wherein the first charge auxiliary layer contacts the ligand, and the second charge auxiliary layer contacts the shell.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: December 22, 2020
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Tae-Yang Lee, Jong-Kwan Bin, Kyung-Kook Jang, Seul-Gi Choi
  • Patent number: 10868216
    Abstract: The present application relates to a light emitting diode chip including: a first semiconductor layer and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are laminated to each other, and have an exposed upper surface respectively. An electrode is provided on the upper surfaces of the first semiconductor layer and the second semiconductor layer respectively. The electrode has a first recess in a direction perpendicular to the upper surface.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: December 15, 2020
    Inventors: Rubo Xing, Dong Wei, Xiaolong Yang, Huimin Liu
  • Patent number: 10868213
    Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: December 15, 2020
    Assignee: Lumileds LLC
    Inventors: Robert David Armitage, Isaac Harshman Wildeson, Parijat Pramil Deb
  • Patent number: 10861897
    Abstract: An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: December 8, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Takeshi Uchida, Jun Iba
  • Patent number: 10854785
    Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: December 1, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur
  • Patent number: 10847757
    Abstract: Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: November 24, 2020
    Assignee: Carbon Nanotube Technologies, LLC
    Inventor: Huaping Li
  • Patent number: 10833425
    Abstract: An antenna device for providing a higher data transmission rate in a wireless communication system is provided. The antenna device includes a first radiating body mounted to a side surface of a multiple layer circuit board to transmit and receive a wireless signal and a second radiating body mounted to a top surface of the multiple layer circuit board and electrically connected to the first radiating body to transmit and receive the wireless signal together with the first radiating body.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: November 10, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jungmin Park, Byungchul Kim, Hyunjin Kim, Kwanghyun Baek, Youngju Lee, Jinsu Heo
  • Patent number: 10833221
    Abstract: Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: November 10, 2020
    Assignee: BOLB INC.
    Inventors: Jianping Zhang, Ying Gao, Ling Zhou
  • Patent number: 10833234
    Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence that generates radiation, the semiconductor layer sequence has an emission side and a rear side opposite said emission side, a mirror for the generated radiation on the rear side, a carrier that is transmissive to the radiation generated, on the emission side, and a reflector housing on side surfaces of the carrier, the reflector housing is impermeable to the generated radiation and configured for diffuse reflection of generated radiation and includes a radiation exit opening, wherein at least one of a width of an opening in the reflector housing and an area of the radiation exit opening decrease(s) in a direction away from the emission side, and a maximum emission of the generated radiation takes place in an emission angle range of 30° to 60°, relative to a perpendicular to the emission side.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: November 10, 2020
    Assignee: OSRAM OLED GmbH
    Inventor: Christopher Wiesmann
  • Patent number: 10825859
    Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: November 3, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Robert R. Rhodehouse
  • Patent number: 10825871
    Abstract: An organic light-emitting display apparatus includes a substrate; a pixel electrode over the substrate; a pixel-defining layer including an opening that exposes at least a portion of the pixel electrode; an intermediate layer, which is over the portion of the pixel electrode exposed by the opening and includes an organic emission layer; a counter electrode over the intermediate layer; and an encapsulating structure, which is over the counter electrode and includes at least one inorganic layer and at least one organic layer, and the at least one organic layer includes quantum dots and is in the opening.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: November 3, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Wonmin Yun, Yisu Kim, Eungseok Park, Byoungduk Lee, Yunah Chung, Yoonhyeung Cho, Yongchan Ju
  • Patent number: 10826003
    Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: November 3, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dongbin Um, Joonsam Kim, Jinsic Min, Euncheol Son, Kyeongyeol Heo
  • Patent number: 10825959
    Abstract: A display device is disclosed, wherein the display device includes a light emitting unit, including: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; and a protecting layer disposed on the second semiconductor layer, wherein the protecting layer includes a first position and a second position, and the first position in the protection layer is closer to the second semiconductor layer than the second position in the protection layer, wherein a first oxygen atomic percentage at the first position is less than a second oxygen atomic percentage at the second position.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: November 3, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Jia-Yuan Chen, Kuan-Feng Lee, Tsung-Han Tsai, Hsiao-Lang Lin, Jui-Jen Yueh
  • Patent number: 10816143
    Abstract: An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type AlxGa1-xN layer (0<x??0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type AlxGa1-xN layer (0<x??0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: October 27, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Hyun Chui Lim, Jae Woong Han
  • Patent number: 10818855
    Abstract: A method of manufacturing an organic light emitting diode display is provided. The method includes: pasting a backboard to an underside of the flexible substrate by a viscosity-variable adhesive; severing the backboard located in the bended region from the backboard located in the non-bended region; peeling off the backboard located in the bended region; and performing a viscosity enhancement treatment to the viscosity-variable adhesive on the non-bended region.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: October 27, 2020
    Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventor: Wu Li
  • Patent number: 10811559
    Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: October 20, 2020
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: I-Kai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Ming-Chi Chou
  • Patent number: 10804435
    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 13, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chang-Tai Hisao, I-Lun Ma, Hao-Yu Chen, Shu-Fen Hu, Ru-Shi Liu, Chih-Ming Wang, Chun-Yuan Chen, Yih-Hua Renn, Chien-Hsin Wang, Yung-Hsiang Lin
  • Patent number: 10804441
    Abstract: A light-emitting device is provided. The light-emitting device includes a substrate including a plurality of pixels, each pixel including a plurality of subpixels designed to emit light with different colors. The plurality of subpixels includes a first subpixel designed to emit red light, a second subpixel designed to emit green light, and a third subpixel designed to emit blue light. The first subpixel includes a first light source formed on the substrate, a red light-emitting layer covering the first light source, and a first yellow color filter covering the red light-emitting layer. The second subpixel includes a second light source formed on the substrate, a green light-emitting layer covering the second light source, and a second yellow color filter covering the green light-emitting layer. The third subpixel includes a third light source formed on the substrate. A method for fabricating the light-emitting device is also provided.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: October 13, 2020
    Assignee: Visera Technologies Company Limited
    Inventors: Wei-Ko Wang, Chia-Hui Wu
  • Patent number: 10804318
    Abstract: A micro light-emitting diode display including a substrate and at least one pixel and a reflective layer is provided. The substrate has at least a portion that is transparent to visible light. The pixel includes an opaque electrode, a micro light-emitting diode, and a filling material. The opaque electrode is present on the substrate. The micro light-emitting diode is present on and in contact with the opaque electrode. A vertical projection of the micro light-emitting diode projected on the substrate at least partially overlaps with a vertical projection of the opaque electrode projected on the substrate. The filling material is present on the micro light-emitting diode and the substrate. The reflective layer is present on the filling material. A vertical projection of the reflective layer projected on the substrate at least partially overlaps with said portion of the substrate.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: October 13, 2020
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventor: Li-Yi Chen
  • Patent number: 10795230
    Abstract: A display device including a substrate having a display area to display an image and a non-display area, at least one pixel provided on the substrate, a first insulating layer provided on the substrate, and including a first opening at a area adjacent to the display area, a second insulating layer provided on the first insulating layer, and including a second opening at the area adjacent to the display area, and an encapsulation layer covering the first opening, the second opening, and a portion of the non-display area. The pixel includes a first electrode provided on the first insulating layer, and a second electrode provided on the second insulating layer. At least one of the first electrode and the second electrode includes a metal layer. At least one of sides of the first opening includes a plurality of slopes having different inclinations.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: October 6, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong Ryuk Park, Jin Wook Seo, Sung Young Shin