Abstract: One example provides a method of generating a high dynamic range image via a differential TOF pixel comprising an array of pixels each having a first polyfinger and a second polyfinger, the first polyfinger and the second polyfinger being independently controllable to integrate current during an integration period, the method comprising, during the integration period, controlling the first polyfinger for a first exposure time, during the integration period, controlling the second polyfinger for a second exposure time, the second exposure time being shorter than the first exposure time, and for each pixel of the plurality of pixels, comparing a charge collected at the first polyfinger and a charge collected at the second polyfinger to a threshold, and selecting one of the charge collected at the first polyfinger and the charge collected at the second polyfinger for inclusion in the HDR image.

Abstract: A display device according to an embodiment of the present invention includes: a base material including a display region having a plurality of pixels and a frame region; a lower electrode provided in each of the plurality of pixels; an organic material layer arranged on the lower electrode; an upper electrode arranged on the organic material layer and covering the display region; a conductor portion provided in the frame region and connected to the upper electrode; and a rib provided on the conductor portion, wherein the upper electrode is arranged on the conductor portion via the rib, a first contact portion where the upper electrode and the conductor portion contact each other is located in the frame region, the rib has a side surface located at an opposite side of the first contact portion from the display region, and an end portion of the upper electrode faces the side surface.

Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).

Abstract: Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a method for manufacturing a light emitting apparatus involves forming a plurality of semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a light emission layer between the first semiconductor layer and the second semiconductor layer. The method further involves forming an electrical contact and a spacer. The electrical contact is formed on a surface of the first semiconductor layer. The spacer is formed on the surface of the first semiconductor layer, around the electrical contact. After forming the spacer, the plurality of semiconductor layers is etched to form a mesa with sidewalls that extend from an outer edge of the spacer. The spacer operates as an etch mask that causes the electrical contact to be substantially centered between opposing sidewalls of the mesa.

Abstract: An organic light emitting device includes a first substrate including a display area and a non-display area, and a dummy metal layer disposed on the first substrate in the non-display area. The dummy metal layer includes a first dummy metal layer and a second dummy metal layer that overlap each other. The organic light emitting device further includes an insulating layer disposed between the first dummy metal layer and the second dummy metal layer in a cross-sectional view, a second substrate covering the first substrate, and a sealant disposed between the first substrate and the second substrate and overlapping the dummy metal layer. The first dummy metal layer is electrically connected to the second dummy metal layer, and the sealant contacts the second dummy metal layer.

Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

Abstract: A display apparatus includes a first pixel and a second pixel. Each of the first and second pixels includes a first sub-pixel which emits light having a first color, a second sub-pixel which emits light having a second color different from the first color, a third sub-pixel which emits light having a third color different from the first and second colors, and an infrared sub-pixel which emits infrared light. The infrared light emitted from the infrared sub-pixel in the first pixel and the infrared light emitted from the infrared sub-pixel in the second pixel have different intensities from each other.

Abstract: An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Abstract: A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and a covering part configured to cover the laminated structure, wherein the columnar parts have a light emitting layer, and the covering part is provided with a through hole penetrating the covering part.

Abstract: A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

Abstract: An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: The present disclosure provides a binding backplane and a manufacturing method thereof, a backlight module and a display device. The binding backplane includes: a substrate; a first trace layer on the substrate; a planarizing layer on a side of the first trace layer away from the substrate; a second trace layer on the planarizing layer and including a connecting portion and a binding portion; a surface protective layer on the second trace layer away and exposing the binding portion; and a conductive reflection structure on a side of the surface protective layer close to the substrate, wherein the conductive reflection structure includes a grounding portion, a distance between a surface of the grounding portion away from the substrate and the substrate is not greater than a distance between a surface of the binding portion away from the substrate and the substrate.

Abstract: The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.

Abstract: A light-emitting device, an electronic device, and a display device each consume less power are provided. The light-emitting device includes a first light-emitting element, a second light-emitting element, and a third light-emitting element that share an EL layer. The EL layer includes a layer containing a light-emitting material that emits blue fluorescence and a layer containing a light-emitting material that emits yellow or green phosphorescence. Light emitted from the second light-emitting element enters a color filter layer or a second color conversion layer, and light emitted from the third light-emitting element enters a first color conversion layer.

Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

Abstract: Disclosed in an embodiment is a semiconductor device package comprising: a body comprising a cavity; a semiconductor device disposed within the cavity; and a light transmission member disposed on an upper portion of the cavity, wherein the body comprises a first conductive part and a second conductive part disposed to be spaced apart from each other in a first direction, a first insulating part disposed between the first conductive part and the second conductive part, and a second insulating part disclosed in an edge region where a lower surface and side surfaces of the body meet, wherein the cavity comprises a stepped portion on which the light transmission member is disposed, and wherein the second insulating part overlaps with the stepped portion in a vertical direction of the body.

Abstract: Luminescent microspheres and a preparation method thereof are disclosed. The preparation method includes: 1) preparing cadmium oxide-doped silica microspheres; 2) adding the silica microspheres to a mixed solution of octadecene/oleic acid or trioctylamine (TOA)/oleic acid, and heating a resulting mixture to a boiling point so that the microspheres swell at high temperature and the oleic acid penetrates into the microspheres to react with CdO to obtain an organic cadmium-adsorbed silica suspension; and 3) adding a selenium precursor to the obtained organic cadmium-adsorbed silica suspension to obtain the luminescent microspheres, where, the selenium precursor reacts with the adsorbed organic cadmium to form CdSe.

Abstract: A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

Abstract: Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

Abstract: Provided is a light emitting device including a lower electrode, an upper electrode disposed to face the lower electrode, a quantum dot light emitting layer between the lower electrode and the upper electrode, an electron transport layer between the lower electrode and the quantum dot light emitting layer, and a hole transport layer between the upper electrode and the quantum dot light emitting layer, wherein the quantum dot light emitting layer includes a quantum dot, and a first ligand on a surface of the quantum dot, and a second ligand on the surface of the quantum dot.

Abstract: A phosphor-converted light-emitting device comprising an emitter device configured to emit a spectrum of electromagnetic radiation, a conversion layer comprising at least one phosphor, the conversion layer being configured to convert electromagnetic radiation of the spectrum into electromagnetic radiation of a different further spectrum, and a blocking layer configured to attenuate electromagnetic radiation outside the further spectrum, the conversion layer being arranged between the emitter device and the blocking layer.

Abstract: A light-emitting apparatus includes an LED element substrate containing a wiring pattern provided on a surface side of the substrate, at least one light-emitting device mounted on amounting area of the substrate and electrically connecting to the wiring pattern, a connecting substrate provided on the LED element substrate, and a transparent member provided over a top surface of the light-emitting device. The connecting substrate has a light-transmitting section provided in a position corresponding to a position of the light-emitting device to suppress the broadening of light emitted from the light-emitting device. The light-transmitting section causes the light from the light-emitting device to pass through or to transmit.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and an active layer that includes AlGaN and is located on the n-type cladding layer. Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.

Abstract: A vertical light emitting diode structure with high current dispersion and high reliability comprises a conductive substrate with a central region and a side region; a light emitting semiconductor layer is disposed on the central region; an ohmic contact metal layer is disposed at a center of the light emitting semiconductor layer; an N-type electrode is disposed at the side region and is connected with the ohmic contact metal layer and the N-type electrode through an N-type electrode bridging structure; a working current is diffused from the center of the light emitting semiconductor layer to have high current dispersion, so that the problem of heat dissipation of local high current caused by the design that the N-type electrode is disposed on the edge can be solved.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a buffer layer disposed between an active layer and a substrate. The active layer overlies the substrate. The substrate and the buffer layer include a plurality of pillar structures that extend vertically from a bottom surface of the active layer in a direction away from the active layer. A top electrode overlies an upper surface of the active layer. A bottom electrode underlies the substrate. The bottom electrode includes a conductive body and a plurality of conductive structures that respectively extend continuously from the conductive body, along sidewalls of the pillar structures, to a lower surface of the active layer.

Abstract: A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

Abstract: A light-emitting device includes a substrate with light-emitting units. The light-emitting units include a first light-emitting unit, a second light-emitting unit, and one or more of third light-emitting units. Each of the light-emitting units includes a first semiconductor layer, an active layer and a second semiconductor layer. An insulating layer includes a first insulating layer opening and a second insulating layer opening formed on each of the light-emitting units. A first extension electrode covers the first light-emitting unit and the first extension electrode covers the first insulating layer opening on the first light-emitting unit. A second extension electrode covers the second light-emitting unit and the second extension electrode covers the second insulating layer opening on the second light-emitting unit. First and second electrode pads cover different parts of the light-emitting units.

Abstract: A light-emitting device includes: a substrate; and a laminated structure provided at the substrate and having a plurality of columnar parts. The columnar part has: an n-type first semiconductor layer; a p-type second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The first semiconductor layer is provided between the light-emitting layer and the substrate. An end part on a side opposite to a side of the substrate, of the light-emitting layer, has a first facet surface. An end part on a side opposite to a side of the substrate, of the second semiconductor layer, has a second facet surface. A relation of ?2??1 is satisfied, where ?1 is a taper angle of the first facet surface, and ?2 is a taper angle of the second facet surface. ?1 is 70° or smaller, and ?2 is 30° or greater.

Abstract: The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.

Abstract: A light-emitting package includes a substrate having a mounting area, one or more light-emitting devices mounted on the mounting area of the substrate, a transparent resin section having a light transmitting property for sealing the one or more light-emitting devices, and a light-reflective member molded on one part of the substrate, which is outside the mounting area on which the one or more light-emitting devices are mounted. There is a distance greater than zero between the light-reflective member and the mounting area.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

Abstract: A method of manufacturing a display device 1 includes: providing a substrate including at least one sub-pixel defined therein and a first wiring disposed for the sub-pixel, and the light-emitting element that includes a first electrode disposed on a lower surface and a second electrode disposed on at least two lateral surfaces intersecting with each other; mounting the light-emitting element on the substrate and electrically connecting the first electrode to the first wiring; forming a resin member covering the at least one light-emitting element, on the substrate, exposing a portion of the second electrode from an upper surface of the resin member by removing an upper portion of the resin member; and forming a second wiring with a mesh shape on the resin member such that a portion of the second wiring is disposed on the light-emitting element to electrically connect the second wiring to the second electrode.

Abstract: A nitride semiconductor light-emitting element includes an active layer including an AlGaN-based barrier layer, a p-type contact layer located on an upper side of the active layer, and an electron blocking stack body located between the active layer and the p-type contact layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer. The first electron blocking layer is located on the active layer side and has a higher Al composition ratio than an Al composition ratio in the barrier layer. The second electron blocking layer is located on the p-type contact layer side and has a lower Al composition ratio than an Al composition ratio in the barrier layer.

Abstract: The present disclosure provides a chip transfer substrate, a chip transfer device and a chip transfer method. The chip transfer substrate includes a substrate, a plurality of bases spaced apart from each other on the substrate, the plurality of bases being configured to carry micro light emitting diodes (Micro LEDs) to be transferred and being movable on the substrate; and a plurality of distance adjusting components each arranged between two adjacent bases and configured to adjust a distance between the two adjacent bases.

Abstract: LED donor substrates and conductive architectures for on-wafer testing are described. In an embodiment, an array of LEDs is supported by an array of electrically conductive stabilization posts. The electrically conductive stabilization posts can be coupled with a test pad for on-wafer testing prior to transferring the LEDs to a receiving substrate.

Abstract: Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form PMOS transistors comprising germanium nanostructure channels and NMOS transistors comprising silicon nanostructure channels. In an example, a first silicon and silicon germanium stack is oxidized to transform silicon to silicon oxide regions, which are removed to form germanium nanostructure channels for PMOS transistors. In another example, silicon and germanium layers within a second silicon and silicon germanium stack are removed to form silicon nanostructure channels for NMOS transistors. PMOS transistors having germanium nanostructure channels and NMOS transistors having silicon nanostructure channels are formed as part of a single fabrication process.

Abstract: A light-emitting device includes: an anode electrode; a cathode electrode; a plurality of light-emitting layers sandwiched between the anode electrode and the cathode electrode; and a light absorption layer disposed between the plurality of light-emitting layers and a light extraction surface, wherein the plurality of light-emitting layers include InP based quantum dots and are configured to emit at least green color of light and red color of light, and the light absorption layer selectively absorbs light at 570 to 610 nm.

Abstract: A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and to emit light having a longer wavelength than that of light emitted from the second LED sub-unit.

Abstract: To provide a method for driving a semiconductor device, by which influence of variation in threshold voltage and mobility of transistors can be reduced. The semiconductor device includes an n-channel transistor, a switch for controlling electrical connection between a gate and a first terminal of the transistor, a capacitor electrically connected between the gate and a second terminal of the transistor, and a display element. The method has a first period for holding the sum of a voltage corresponding to the threshold voltage of the transistor and an image signal voltage in the capacitor; a second period for turning on the switch so that electric charge held in the capacitor in accordance with the sum of the image signal voltage and the threshold voltage is discharged through the transistor; and a third period for supplying a current to the display element through the transistor after the second period.

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

Abstract: In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and ?2>?1, in which ?1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and ?2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.

Abstract: A white LED including red phosphor, at least one blue LED chip and at least one green LED chip, wherein a red light, a blue light and a green light are mixed simultaneously to produce a white light. The red phosphor comprises a first red phosphor and a second red phosphor. The first red phosphor is made from a substance having structure formula M2AX6:Mn4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a backlight module. The adjustably colored points of a device comprising M2AX6:Mn4+ are achieved by adding a second red phosphor to the red phosphor comprising M2AX6:Mn4+.

Abstract: A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer

Abstract: An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.

Abstract: A light emitting device includes a vertical stack of a light emitting diode and a field effect transistor that controls the light emitting diode. An isolation layer is present between the light emitting diode and the field effect transistor, and an electrically conductive path electrically shorts a node of the light emitting diode to a node of the field effect transistor. The field effect transistor may include an indium gallium zinc oxide (IGZO) channel and may be located over the isolation layer. Alternatively, the field effect transistor may be a high-electron-mobility transistor (HEMT) including an epitaxial semiconductor channel layer and the light emitting diode may be located over the HEMT.