Incoherent Light Emitter Patents (Class 257/13)
  • Patent number: 10263156
    Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: April 16, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Yi-Ru Huang, Yu-Yun Lo, Chih-Ling Wu, Jing-En Huang, Shao-Ying Ting
  • Patent number: 10263141
    Abstract: A semiconductor light-emitting device according to an embodiment of the present disclosure includes a nitride-based first light-emitting layer. The first light-emitting layer has an InaGa1?aN layer (a?0), and has a plurality of first island-shaped regions that include InbGa1?bN (b>a) inside the InaGa1?aN layer.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: April 16, 2019
    Assignee: Sony Corporation
    Inventors: Yuuki Isobe, Hidekazu Kawanishi
  • Patent number: 10263143
    Abstract: A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: April 16, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Xue Wang, Markus Broell, Stefan Barthel
  • Patent number: 10263145
    Abstract: A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising AlxGa1-xN (0<x?1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 16, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Hun Jang, Seung Keun Nam, Jeong Soon Yim, Won Hee Choi
  • Patent number: 10256355
    Abstract: A photoelectric converter includes two semiconductor layers forming a p/n junction as a photoelectric conversion layer. At least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and the quantum dot integrated film includes two or greater quantum dot layers having different energy levels. In a case that the quantum dot integrated film is a p-type, a quantum dot layer having a large difference between an energy level (Bv) of a valence band and a Fermi level (Ef) is disposed closer to a p/n junction surface.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: April 9, 2019
    Assignee: KYOCERA CORPORATION
    Inventor: Toru Nakayama
  • Patent number: 10256365
    Abstract: A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: April 9, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
  • Patent number: 10249787
    Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: April 2, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Tobias Meyer, Thomas Lehnhardt, Matthias Peter, Asako Hirai, Juergen Off, Philipp Drechsel, Peter Stauss
  • Patent number: 10243103
    Abstract: Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and a LIGHTING DEVICE. An ultraviolet light emitting diode according to an embodiment includes: a substrate; a first undoped GaN layer including a planar upper surface and a V-pit on the substrate; a first nitride layer on the V-pit of the first undoped GaN layer; a first undoped AlGaN-based semiconductor layer on the first undoped GaN layer and the first nitride layer; and a second undoped GaN layer on the first undoped AlGaN-based semiconductor layer, wherein the first undoped AlGaN-based semiconductor layer includes a first region on the planar upper surface of the first undoped GaN layer and a second region located on the V-pit of of the first undoped GaN layer, and wherein an Al concentration of the first region may be greater than that of the second region.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: March 26, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Chan Keun Park
  • Patent number: 10243107
    Abstract: A light emitting device includes a resin molding, first and second leads, and a light emitting element. The resin molding includes a front surface defining an opening, and a lower surface adjacent to the front surface. The first and second leads each includes an outer lead portion and an inner lead portion. The outer lead portion protrudes from the lower surface of the resin molding, and includes a bent portion bent along the lower surface. A surface on an inner side of the bent portion including a first recessed section. The inner lead portion includes an embedded portion embedded in the resin molding, and an exposed portion exposed in the opening. A surface of the embedded portion opposite from the surface where the first recessed section is provided includes a second recessed with a part of the resin molding being positioned in the second recessed section.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: March 26, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Tetsuya Ishikawa, Gensui Tamura
  • Patent number: 10243114
    Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: March 26, 2019
    Assignee: Nanosys, Inc.
    Inventors: Jason Hartlove, Veeral Hardev, Shihai Kan, Jian Chen, Jay Yamanaga, Christian Ippen, Wenzhuo Guo, Charles Hotz, Robert Wilson
  • Patent number: 10234753
    Abstract: The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: March 19, 2019
    Assignee: Unique Materials Co., Ltd.
    Inventors: Pi-Tai Chou, Shang-Wei Chou
  • Patent number: 10235920
    Abstract: A graphene display, and the graphene display's driving method and device are disclosed. The graphene display driving method includes: obtaining the grey-level values of the three primary colors of a pixel to be input; determining the colors and the grey-level values of the two dynamic subpixels and the static subpixel according to the grey-level values of the pixel's three primary colors and a pre-determined correspondence relationship between three primary colors' grey-level values and four primary colors' grey-level values; and applying driving voltages respectively corresponding to the colors and grey-level values of the two dynamic subpixels and the static subpixel to the two dynamic subpixels and the static subpixel. The present disclosure is able to achieve a greater gamut, enhance display quality, and reduce power consumption of the display.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: March 19, 2019
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Yong Fan
  • Patent number: 10236321
    Abstract: A light-emitting component includes a light-emitting element, a thyristor, and a light-absorbing layer. The thyristor includes a semiconductor layer having a bandgap energy smaller than or equal to a bandgap energy equivalent to a wavelength of light emitted by the light-emitting element. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked. The light-absorbing layer absorbs the light emitted by the light-emitting element.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: March 19, 2019
    Assignee: FUJI XEROX CO., LTD.
    Inventor: Takashi Kondo
  • Patent number: 10236663
    Abstract: A semiconductor optical device includes a laminated structure constituted of a first compound semiconductor layer of an n type, an active layer, and a second compound semiconductor layer of a p type, the active layer including at least 3 barrier layers and well layers interposed among the barrier layers, and the semiconductor optical device satisfying Egp-BR>Egn-BR>EgWell when a bandgap energy of the barrier layer adjacent to the second compound semiconductor layer is represented by Egp-BR, a bandgap energy of the barrier layer between the well layers is represented by EgWell, and a bandgap energy of the barrier layer adjacent to the first compound semiconductor layer is represented by Egn-BR.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: March 19, 2019
    Assignee: SONY CORPORATION
    Inventors: Katsunori Yanashima, Kunihiko Tasai
  • Patent number: 10236269
    Abstract: A semiconductor device has a semiconductor chip adhesively bonded to a die pad. An area having large irregularities is formed on an upper side surface of the semiconductor chip to be covered by an encapsulating resin, and an area having small irregularities is formed on a lower side surface of the semiconductor chip, thereby improving adhesive strength between the semiconductor chip and the encapsulating resin and preventing penetration of moisture from outside.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: March 19, 2019
    Assignee: ABLIC INC.
    Inventor: Makoto Takesawa
  • Patent number: 10236409
    Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: March 19, 2019
    Assignee: Lumileds LLC
    Inventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
  • Patent number: 10229959
    Abstract: An organic electroluminescence (EL) display panel including pixels arranged in a matrix, the organic EL display panel includes: a substrate; pixel electrode layers made of a light-reflective material and arranged on the substrate in a matrix; an insulating layer provided at least above row and column outer edges of the pixel electrode layers and above inter-regions on the substrate between the row and column outer edges; an organic functional layer provided above the pixel electrode layers; and a counter electrode layer made of a light-transmissive material and is provided above the organic functional layer, wherein the organic functional layer includes light-emitting layers that are provided in regions above the pixel electrode layers where the insulating layer is not provided, the light-emitting layers causing organic electroluminescence, and the insulating layer has an optical density of 0.5 to 1.5 in a direction of the substrate when viewed in plan.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: March 12, 2019
    Assignee: JOLED INC.
    Inventors: Kaoru Abe, Takashi Osako, Kenichi Nendai
  • Patent number: 10225907
    Abstract: A light emitting device, a fabricating method thereof, and a display device are disclosed. In the light emitting device, a light emitting functional layer includes at least two QD light emitting layers which emit light of different colors, and a transparent insulating layer which is arranged between any two neighboring QD light emitting layers. The light emitting device has a reduced power consumption, and the problem of shift in color of the emitted light due to high-energy excitons transfer is overcome.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: March 5, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Xu, Shi Shu, Xiaolong He, Jikai Yao
  • Patent number: 10224454
    Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: March 5, 2019
    Assignee: Cree, Inc.
    Inventors: Thomas A. Kuhr, Robert David Schmidt, Daniel Carleton Driscoll, Brian T. Collins
  • Patent number: 10222002
    Abstract: This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: March 5, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chiu-Lin Yao, Min-Hsun Hsieh, Been-Yu Liaw, Wei-Chiang Hu, Po-Hung Lai, Chun-Hung Liu, Shih-An Liao, Yu-His Sung, Ming-Chi Hsu
  • Patent number: 10217911
    Abstract: A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: February 26, 2019
    Assignee: GLO AB
    Inventors: Martin Schubert, Daniel Bryce Thompson, Michael Grundmann, Nathan Gardner
  • Patent number: 10217953
    Abstract: A quantum dot light-emitting device, a fabricating method thereof, and a display substrate are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: February 26, 2019
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Yuedi He, Boris Kristal, Yanzhao Li, Jie Sun
  • Patent number: 10217819
    Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: February 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Minhyun Lee, Haeryong Kim, Hyeonjin Shin, Seunggeol Nam, Seongjun Park
  • Patent number: 10217905
    Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: February 26, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sun Woo Park, Dong Hyun Sung, Dae Hee Lee, Byoung Woo Lee, Kwang Ki Choi, Jae Cheon Han
  • Patent number: 10217906
    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: February 26, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Wen-Hung Chuang, Cheng-Lin Lu
  • Patent number: 10208899
    Abstract: A light source includes a semiconductor light emitting device; and a wavelength converter. The wavelength converter includes: a substrate; a phosphor layer disposed on the substrate; and a light reflective layer disposed on the substrate so as to surround the phosphor layer. The phosphor layer includes phosphor particles and a first matrix material in which the phosphor particles are dispersed. The light reflective layer includes inorganic compound particles and a second matrix material in which the inorganic compound particles are dispersed. The inorganic compound particles have a refractive index higher than that of the first matrix material. The first matrix material has a refractive index higher than that of the phosphor particles. The phosphor particles have a refractive index higher than that of the second matrix material.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: February 19, 2019
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Kazuma Mima, Yoshihisa Nagasaki, Takahiro Hamada, Takashi Ohbayashi, Yukihiko Sugio
  • Patent number: 10211057
    Abstract: A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency ? of less than 0.7.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: February 19, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Anton Mauder, Thomas Raker, Hans-Joachim Schulze, Wolfgang Werner
  • Patent number: 10211384
    Abstract: An LED apparatus is provided. The LED apparatus includes a plurality of substrate layers, each substrate layer corresponding to one of a plurality of sub-pixels of a pixel; a heat sink plate provided on a first side of each substrate layer, the heat sink plate including a patterned area provided between adjacent substrate layers of the plurality of substrates layers; a fluorescence provided on the heat sink plate overlapping at least a portion of one of the plurality of substrate layers; and a plurality of light emitting diodes, each light emitting diode formed on a second side opposite to the first side of each substrate layer.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: February 19, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-hoon Jung, Dae-sik Kim
  • Patent number: 10205054
    Abstract: A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: February 12, 2019
    Assignee: GLO AB
    Inventors: Linda Romano, Ping Wang
  • Patent number: 10199539
    Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: February 5, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ki Yon Park, Yu Dae Han
  • Patent number: 10199534
    Abstract: A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: February 5, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • Patent number: 10199530
    Abstract: The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that is disposed on a first conductive semiconductor layer and generates ultraviolet wavelength; an electron blocking layer that is disposed on the active layer; a second conductive semiconductor layer that is disposed on the electron blocking layer; a third conductive semiconductor layer that is disposed on the second conductive semiconductor layer; and an electrode that is disposed on the third conductive semiconductor layer, in which the second and third conductive semiconductor layers include an AlGaN semiconductor, and in which the third conductive semiconductor layer has a lower aluminum composition than that of the second conductive semiconductor layer and has an electrical contact resistance with the electrode that is lower than that of the second conductive semiconductor layer.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: February 5, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hae Jin Park
  • Patent number: 10193019
    Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: January 29, 2019
    Assignees: Everlight Electronics Co., Ltd., Southern Taiwan University of Science and Technology
    Inventor: Ming-Lun Lee
  • Patent number: 10192992
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Patent number: 10193021
    Abstract: A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: January 29, 2019
    Assignees: STANLEY ELECTRIC CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki Togawa, Masakazu Sugiyama
  • Patent number: 10186634
    Abstract: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light-emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is of a conductivity type opposite to that of the first semiconductor layer and is formed on the light-emitting functional layer. The light-emitting layer has a base layer with a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, and a quantum well structure layer formed from at least one quantum well layer and at least one barrier layer that are formed on the base layer. Each of the at least one quantum well layer has an InGaN composition so that the In composition increases as the distance to the second semiconductor layer decreases.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: January 22, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventor: Yusaku Fujii
  • Patent number: 10177195
    Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 8, 2019
    Assignee: Intel Corporation
    Inventors: Khaled Ahmed, Kunjal Parikh, Peter L. Chang
  • Patent number: 10170632
    Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: January 1, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Takeshi Osada, Shunpei Yamazaki
  • Patent number: 10164147
    Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: December 25, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Wenhong Sun, Alexander Dobrinsky, Maxim S. Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Patent number: 10165659
    Abstract: An LED lighting control device is provided that is capable of being wirelessly and remotely controlled without the need for an Internet connection. The LED lighting control device is configured to be operated in a manual mode of operations and in remote mode of operations. In the remote mode of operations, the LED lighting control device is remotely and wirelessly controlled by a user operating a Bluetooth-enable device that wireless communicates with the LED lighting control device to cause the LED lighting control device to control operations of outdoor LED lighting that is electrically coupled to the LED lighting control device.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: December 25, 2018
    Assignee: J & J ELECTRONICS, LLC
    Inventors: Alan V. Diep, Michael P. Babb
  • Patent number: 10164041
    Abstract: A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom portion of the fin, the fin having a dummy gate formed thereover, the dummy gate having a gate sidewall spacer on sidewalls thereof; forming a FIN-void and an under-FIN cavity in the STI layer; forming first spacers by filling the under-FIN cavity and FIN-void with a first fill; removing the dummy gate, thereby exposing both FIN-bottom and FIN-top portions of the fin underneath the gate; creating an open area underneath the exposed FIN-top by removing the exposed FIN-bottom; and forming a second spacer by filling the open area with a second fill; wherein a distance separates a top-most surface of the second spacer from a bottom-most surface of the FIN-top portion. A GAA FinFET formed by the method is also disclosed.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: December 25, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi
  • Patent number: 10153258
    Abstract: An LED module includes: a substrate including main, rear, and bottom surfaces; a first light emitting element disposed on the main surface; a conductive layer formed on the substrate and electrically coupled with the first light emitting element; a first conductive bonding layer interposed between the first light emitting element and the conductive layer; a main surface insulating film formed on the main surface and covering a portion of the conductive layer; and a first wire, wherein the main surface and the rear surface face opposite directions, the bottom surface connects long sides of the main and rear surfaces, the conductive layer includes a first wire bonding portion where the first wire is bonded, and the main surface insulating film includes a first insulating portion including a portion interposed between the first light emitting element and the first wire bonding portion when viewed in a thickness direction of the substrate.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: December 11, 2018
    Assignee: Rohm Co., Ltd.
    Inventor: Masahiko Kobayakawa
  • Patent number: 10153448
    Abstract: A display device is provided including a first electrodes arranged in a matrix shape above an insulation surface, a bank covering an end part of the first electrode and having an opening part exposing an upper surface of the first electrode, an organic layer covering the opening part and including a light emitting layer, and a second electrode covering the bank and the organic layer, wherein the bank has an upper surface part and an inclined part between the upper surface part and an opening in the bank, and a surface of the inclined part has a plurality of concave and convex parts.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: December 11, 2018
    Assignee: Japan Display Inc.
    Inventor: Toshio Tojo
  • Patent number: 10147845
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 4, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Patent number: 10141529
    Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: November 27, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang, John J. Yurkas
  • Patent number: 10141477
    Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: November 27, 2018
    Assignee: Lumileds LLC
    Inventors: Lekhnath Bhusal, Theodore Chung, Parijat Deb
  • Patent number: 10134962
    Abstract: Provided is a quantum dot LED package structure comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier layer and a top silica gel layer, wherein the inorganic barrier layer covers the external bracket and the quantum dot layer light emitting chip on the bottom bracket to package the external bracket and the quantum dot layer light emitting chip; the external bracket and the quantum dot layer light emitting chip are packaged by using the inorganic barrier layer, and a top silica gel layer is provided on the inorganic barrier layer, and the water and oxygen barrier condition that the existing package structure simply using the silica gel layer cannot meet can be satisfied and good heat dissipation can be provided. Thus, the issues of mass production difficulty, high cost, low luminous efficiency, difficulty to achieve narrow border application can be solved.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: November 20, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Yong Fan
  • Patent number: 10134949
    Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: November 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jai Won Jean, Min Ho Kim, Min Hwan Kim, Jang Mi Kim, Chul Min Kim, Jeong Wook Lee, Jae Deok Jeong, Yong Seok Choi
  • Patent number: 10134952
    Abstract: The invention relates to a light emitting device, a manufacturing method thereof and a display device. The light emitting device comprises: a substrate, and a first electrode layer, a second electrode layer and a light emitting layer arranged above the substrate, the light emitting layer being disposed between the first electrode layer and the second electrode layer, the light emitting layer comprises a hole transport layer having a first thickness which is capable of avoiding performance degradation of the light emitting device.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: November 20, 2018
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaolong He, Shi Shu, Wei Xu, Zhanfeng Cao, Jikai Yao
  • Patent number: 10128411
    Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1?XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: November 13, 2018
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Yasuhiro Takenaka, Yoshiki Saito, Shinichi Matsui, Daisuke Shinoda, Hisayuki Miki, Hironao Shinohara