Incoherent Light Emitter Patents (Class 257/13)
  • Patent number: 11329175
    Abstract: A semiconductor relay includes: a substrate; a semiconductor layer of a direct transition type which is on the substrate and which has semi-insulating properties; a p-type semiconductor layer on at least part of the semiconductor layer; a first electrode; and a second electrode. The first electrode is electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer. The second electrode is spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, and the first electrode includes a first opening part.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: May 10, 2022
    Assignee: Panasonic Holdings Corporation
    Inventors: Nanako Hirashita, Satoshi Tamura, Daisuke Shibata, Shinji Ujita
  • Patent number: 11329243
    Abstract: The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: May 10, 2022
    Inventors: Yuanchun Wu, Shibo Jiao, Shuren Zhang, Jing Chen, Lixi Wang, Jiangyong Pan, Yan Tu
  • Patent number: 11322908
    Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: May 3, 2022
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Toru Takayama, Tohru Nishikawa, Tougo Nakatani, Katsuya Samonji, Takashi Kano, Shinji Ueda
  • Patent number: 11322647
    Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: May 3, 2022
    Assignee: Silanna UV Technologies Pte Ltd
    Inventors: Johnny Cai Tang, Chun To Lee, Guilherme Tosi, Christopher Flynn, Liam Anderson, Timothy William Bray, Petar Atanackovic
  • Patent number: 11322656
    Abstract: A semiconductor light emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material; an active layer of an AlGaN-based semiconductor material provided on a first top surface of the n-type clad layer; and an n-side electrode provided on a second top surface of the n-type clad layer adjacent to the first top surface. The n-side electrode includes a first metal layer on the second top surface containing titanium (Ti) and a second metal layer on the first metal layer containing aluminum (Al). A root-mean-square roughness (Rq) of a top surface of the second metal layer is 5 nm or less.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: May 3, 2022
    Assignee: NIKKISO CO., LTD.
    Inventors: Haruhito Sakai, Noritaka Niwa, Tetsuhiko Inazu
  • Patent number: 11319487
    Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: May 3, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong Hee Lee, Eun Joo Jang, Hyun A Kang, Tae Hyung Kim
  • Patent number: 11309686
    Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: April 19, 2022
    Assignee: SONY CORPORATION
    Inventors: Hiroshi Nakajima, Tatsushi Hamaguchi, Jugo Mitomo, Susumu Sato, Masamichi Ito, Hidekazu Kawanishi
  • Patent number: 11309454
    Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: April 19, 2022
    Assignees: Marubun Corporation, Shibaura Machine Co., Ltd., RIKEN, ULVAC, Inc., Tokyo Ohka Kogyo Co., Ltd., Nippon Tungsten Co., Ltd., Dai Nippon Printing Co., Ltd., Dowa Holdings Co., Ltd.
    Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Kanji Furuta, Takeshi Iwai, Yohei Aoyama, Yasushi Iwaisako, Tsugumi Nagano, Yasuhiro Watanabe
  • Patent number: 11302845
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer of an AlGaN-based semiconductor material provided on the n-type clad layer and configured to emit deep ultraviolet light having a wavelength of not shorter than 300 nm and not longer than 360 nm; and a p-type semiconductor layer provided on the active layer. The n-type clad layer is configured such that a transmittance for deep ultraviolet light having a wavelength of 300 nm or shorter is 10% or lower.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: April 12, 2022
    Assignee: NIKKISO CO., LTD.
    Inventors: Tetsuhiko Inazu, Cyril Pernot
  • Patent number: 11302852
    Abstract: A display panel and a method of manufacturing a display panel are provided. In a solution, a plurality of grooves are formed on at least one metal layer by an etching process, and a connection portion and the at least one metal layer are connected by an adhesive. The adhesive can flow into the grooves during a bonding process to form a plurality of protrusions to fill the grooves, thereby increasing a contact area with the at least one metal layer and increasing bonding strength between the adhesive and the at least one metal layer. It is possible to avoid poor soldering, dark spots, and the like of a light emitting device.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: April 12, 2022
    Inventor: Lijun Zhang
  • Patent number: 11295971
    Abstract: An adsorption device includes a magnetic plate and a limiting layer. A surface of the magnetic plate includes a first region and a plurality of second regions spaced apart from each other. The first region and each second region do not overlap with each other. The first region forms a magnetic pole of the magnetic plate, and each second region forms the opposite magnetic pole of the magnetic plate. The limiting layer covers the first region. Each second region is exposed to the limiting layer and configured for adsorbing a small-scale LED as a target object.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: April 5, 2022
    Assignee: Century Technology (Shenzhen) Corporation Limited
    Inventors: Po-Liang Chen, Yung-Fu Lin, Hirohisa Tanaka, Yasunori Shimada
  • Patent number: 11282985
    Abstract: The present invention discloses a flip-chip LED chip used in a backlight and a producing method thereof. The flip-chip LED chip used in the backlight comprises a substrate, an epitaxial layer, a transparent conductive layer, an insulating layer, a first reflecting layer, a second reflecting layer, a first electrode, and a second electrode. In the present invention, the first reflecting layer and the second reflecting layer are formed on both sides of the substrate. By adjusting the reflectance of the first reflecting layer and the second reflecting layer, the light emitted by the epitaxial layer is reflected by the first reflecting layer and the second reflecting layer, resulting in 20-40% of the light being emitted from the back of the chip, and 60-80% of the light being emitted from the side of the chip. This increases the light uniformity of the LED backlight.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: March 22, 2022
    Assignee: FOSHAN NATIONSTAR SEMICONDUCTOR CO., LTD
    Inventors: Liang Xu, Caixia Jin, Cheng Li, Chiaming Chuang
  • Patent number: 11281045
    Abstract: Provided are a wavelength conversion layer and a display device. A color conversion element comprises: a wavelength conversion layer; one or more low refractive layers which are disposed on and/or under the wavelength conversion layer and have a lower refractive index than the wavelength conversion layer; and one or more capping layers which are disposed between the wavelength conversion layer and the low refractive layers and/or on a surface opposite to a surface of each of the low refractive layers which faces the wavelength conversion layer.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: March 22, 2022
    Assignee: Samsung Display Co., Ltd.
    Inventors: Taek Joon Lee, Young Gu Kim, Keun Chan Oh, Sun Young Chang, Hye Lim Jang, Baek Kyun Jeon, Jin Soo Jung, Kyung Seon Tak, Jae Jin Lyu, Moon Jung Baek
  • Patent number: 11276989
    Abstract: The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: March 15, 2022
    Assignee: Comptek Solutions Oy
    Inventors: Vicente Calvo Alonso, Johnny Dahl, Jouko Lang
  • Patent number: 11276833
    Abstract: A method for manufacturing a quantum dots layer including providing a substrate on which a first electrode, a second electrode, and a third electrode are disposed; providing a first mixed solution including a first quantum dots, which have been surface-treated to have a first polarity, on the first to third electrodes; providing a second polarity opposite to the first polarity to the first electrode resulting in deposition of the first quantum dots on the first electrode; and drying the first mixed solution to form a first quantum dots layer.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: March 15, 2022
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sungmo Yeon
  • Patent number: 11275238
    Abstract: The invention relates to an active screen (220), i.e. to a light-emitting screen, comprising a matrix array of modules (222) that each form one pixel, and a matrix array (260) of control elements that are intended to address each of these modules, respectively. According to the invention, each module comprises at least three light-emitting submodules (224) that each include a three-dimensional light-emitting structure (250), and each control element is intended to individually address each submodule. A head-up display (1) comprising such a screen (220), and a device (24) for projecting images, said device being suitable for transmitting, in the direction of a semitransparent mirror (10) the images generated by said screen, is also described.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: March 15, 2022
    Assignee: VALEO COMFORT AND DRIVING ASSISTANCE
    Inventors: Fran├žois Grandclerc, Pierre Mermillod
  • Patent number: 11271138
    Abstract: A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AlN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: March 8, 2022
    Assignee: THE BOEING COMPANY
    Inventors: Shanying Cui, Danny Kim
  • Patent number: 11271033
    Abstract: Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: March 8, 2022
    Assignee: Lumileds LLC
    Inventors: Costas Dimitropoulos, Sungsoo Yi, John Edward Epler, Byung-Kwon Han
  • Patent number: 11264535
    Abstract: An LED has: a substrate formed as a substrate layer; a buffer layer formed on the substrate layer; and an N? doped layer formed on the buffer layer. A first dual color blue/green MQW active region, a negative electrode, and a second dual color blue/green MQW active region formed on the N? doped layer. A first P? doped layer is formed on the first dual color blue green MQW active region. A second P? doped layer is formed on the second dual color blue green MQW active region. A first P+ doped layer is formed on the first P? doped layer. A second P+ doped layer is formed on the second P? doped layer. A first positive electrode is formed on the first P+ doped layer. A second positive electrode is formed on the second P+ doped layer. A blue/green LED with red luminescence materials emits a full spectrum.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: March 1, 2022
    Inventor: Jyh-Chia Chen
  • Patent number: 11264441
    Abstract: An organic light emitting display apparatus includes a substrate; a thin film transistor which is disposed over the substrate; a first electrode which is disposed over the substrate and electrically connected to the thin film transistor; a passivation layer which covers the thin film transistor and contacts a predetermined region of an upper surface of the first electrode; an intermediate layer which is disposed over the first electrode, includes an organic emission layer, and contacts a predetermined region of the passivation layer; and a second electrode which is disposed over the intermediate layer.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: March 1, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seong-Hyun Jin, Seong-Ho Kim
  • Patent number: 11257687
    Abstract: A method for repairing etching damage on a nitride-based epitaxial layer of an optoelectronic device and an optoelectronic device attributable thereto are provided. The method includes: providing a nitrogen-containing working liquid and a annealing apparatus having a reaction chamber; heating the reaction chamber to a predetermined temperature; atomizing the nitrogen-containing working liquid, and introducing the thus formed nitrogen-containing spray into the reaction chamber; and subjecting the optoelectronic device to an annealing treatment in the reaction chamber in the presence of the nitrogen-containing spray, so as to repair the etching damage on the nitride-based epitaxial layer.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: February 22, 2022
    Assignee: National Chung-Hsing University
    Inventors: Tung-Hsing Wu, Shuo-Huang Yuan, Chih-Yi Yang
  • Patent number: 11257795
    Abstract: A chip-scale LED package structure includes a white light emitting unit for emitting a white light, a red flip-chip LED for emitting a red light, a green flip-chip LED for emitting a green light, a blue flip-chip LED for emitting a blue light, and an encapsulation layer. The encapsulation includes an encapsulation resin and a plurality of refractive particles distributed in the encapsulation resin. The encapsulation layer encapsulates the white light emitting unit, the red flip-chip LED, the green flip-chip LED, and the blue flip-chip LED. Moreover, electrodes of the white light emitting unit, electrodes of the red flip-chip LED, electrodes of the green flip-chip LED, and electrodes of the blue flip-chip LED are exposed from the encapsulation layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: February 22, 2022
    Assignees: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., LITE-ON TECHNOLOGY CORPORATION
    Inventors: Tien-Yu Lee, Chih-Yuan Chen, Wei-Lun Tsai, Chien-Tung Huang, Wei-Hsun Hsu, Wei-Chien Hung
  • Patent number: 11258050
    Abstract: An organic light-emitting display device capable of improving luminance and light extraction efficiency thereof while preventing image blur, and a method for manufacturing the same is disclosed. In accordance with the device and the method, image blur is suppressed and luminance and light-emitting efficiency are improved by forming micro-lenses on an encapsulating layer for protecting organic light-emitting elements at precise positions corresponding to the elements in a self-aligned and self-assembled manner.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: February 22, 2022
    Assignee: LG Display Co., Ltd.
    Inventors: Byungjoo Lee, Youngbok Lee, Keongjin Lee, Taeyoung Heo, Wonsik Lee
  • Patent number: 11257980
    Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: February 22, 2022
    Assignee: KAISTAR LIGHTING(XIAMEN) CO., LTD.
    Inventors: Ben-Jie Fan, Jing-Qiong Zhang, Yi-Qun Li, Hung-Chih Yang, Tsung-Chieh Lin, Ho-Chien Chen, Shuen-Ta Teng, Cheng-Chang Hsieh
  • Patent number: 11256022
    Abstract: A polarization recycling backlight and a multiview display employ a polarization-selective scattering feature configured to preferentially scatter out a first polarization component of guided light and a polarization conversion structure configured to convert a portion of a second polarization component of the guided light into the first polarization component. The polarization conversion structure includes a subwavelength grating.
    Type: Grant
    Filed: July 12, 2020
    Date of Patent: February 22, 2022
    Assignee: LEIA INC.
    Inventors: Francesco Aieta, Xuejian Li, Thomas Hoekman, David A. Fattal
  • Patent number: 11251166
    Abstract: A fluidic assembly emissive display panel is presented with a plurality of wells exposing LED interfaces. Each LED interface is made up of a planar first interconnect platform having an x-axis first depth and is configured to accept an axial LED first electrode mounting wing. A planar second interconnect platform has the first depth and is configured to accept an axial LED second electrode mounting wing. A groove is interposed between the first and second interconnect platforms and has an x-axis second depth, greater than the first depth, and is configured to accept an axial LED body locking tooth. The axial LEDs have an inorganic LED body with two symmetrical locking teeth. First and second electrode mounting wings are electrically connected to corresponding LED interface first and second interconnect platforms, and aligned in a plane orthogonal to stacked LED body semiconductor layers.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: February 15, 2022
    Assignee: eLux, Inc.
    Inventors: Paul J. Schuele, Kenji Sasaki, Kurt Ulmer, Jong-Jan Lee
  • Patent number: 11248764
    Abstract: Provided is a lighting device, comprising: a light source module comprising: at least one light source disposed on a printed circuit board; and a resin layer disposed on the printed circuit board so that the light source is embedded; a light reflection member formed on at least any one of one side surface and another side surface of the resin layer; and a diffusion plate having an upper surface formed on the light source module, and a side wall which is integrally formed with the upper surface and formed to extend in a lower side direction and which is adhered onto the light reflection member, wherein a first separated space is formed between the light source module and the upper surface of the diffusion plate, whereby flexibility of the product itself can be secured, and durability and reliability of the product can be also improved.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: February 15, 2022
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Kwang Ho Park, Chul Hong Kim, Hyun Duck Yang, Moo Ryong Park, Jun Chul Hyun
  • Patent number: 11245053
    Abstract: Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: February 8, 2022
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Khaled Ahmed, Anup Pancholi
  • Patent number: 11239214
    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a display device. The display panel includes: a substrate; a plurality of driving electrodes and a micro light emitting diode located on a surface of the substrate, wherein respective electrodes of the micro light emitting diode are located at a side of the micro light emitting diode facing away from the substrate; and a plurality of driving wires respectively electrically coupling the respective electrodes of the micro light emitting diode to the plurality of driving electrodes.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: February 1, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Minghua Xuan, Xiaochuan Chen, Dongni Liu, Han Yue
  • Patent number: 11227973
    Abstract: Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges f
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: January 18, 2022
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Rak Jun Choi, Byeoung Jo Kim
  • Patent number: 11226447
    Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: January 18, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Hyung Kim, Eun Joo Jang, Shin Ae Jun, Hyun A Kang, Yongwook Kim, Na Youn Won, Hyo Sook Jang
  • Patent number: 11227978
    Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: January 18, 2022
    Assignee: Epistar Corporation
    Inventors: Wen-Luh Liao, Cheng-Long Yeh, Ko-Yin Lai, Yao-Ru Chang, Yung-Fu Chang, Yi Hsiao, Shih-Chang Lee
  • Patent number: 11217763
    Abstract: To provide a light-emitting device that can obtain fluorescence having a narrow spectrum more efficiently, a light-emitting device includes: a light-emitting layer in which thermally activated delayed fluorescence bodies and quantum dots are dispersed; a first electrode in a lower layer than the light-emitting layer; and a second electrode in an upper layer than the light-emitting layer, wherein a light emission spectrum of the thermally activated delayed fluorescence bodies and an absorption spectrum of the quantum dots at least partially overlap each other.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: January 4, 2022
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Yuto Tsukamoto, Shinichi Kawato, Tokiyoshi Umeda, Manabu Niboshi, Youhei Nakanishi, Hisayuki Utsumi, Masayuki Kanehiro, Shota Okamoto
  • Patent number: 11217709
    Abstract: In a graphene-semiconductor heterojunction photodetector and a method of manufacturing the same according to the present inventive concept, a source electrode and a test electrode are formed to face each other on a graphene layer, and a drain electrode is formed in a direction perpendicular to a central region portion of the graphene layer, so that the drain electrode may be physically separated from the graphene layer. Further, charges formed at the central region portion of the graphene layer are transmitted to the drain electrode through a substrate, so that high photosensitivity may be secured, and a high output voltage may be secured for the applied light. Accordingly, the drain electrode is formed at a side surface of the graphene layer, so that the size of the drain electrode may be easily controlled, and a high output voltage may be obtained.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: January 4, 2022
    Inventors: Byoung Hun Lee, Kyoung Eun Chang
  • Patent number: 11217726
    Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: January 4, 2022
    Assignee: SOKO KAGAKU CO., LTD.
    Inventors: Akira Hirano, Yosuke Nagasawa, Shigefusa Chichibu, Kazunobu Kojima
  • Patent number: 11217724
    Abstract: A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part cont
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: January 4, 2022
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Duk Hyun Park, Byung Hak Jeong
  • Patent number: 11217567
    Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: January 4, 2022
    Inventors: Jonathan S. Steckel, Jean-Jacques P. Drolet, Roland Van Gelder, Kelly C. McGroddy, Ion Bita, James Michael Perkins, Andreas Bibl, Sajjad A. Khan, James E. Pedder, Elmar Gehlen
  • Patent number: 11205887
    Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: December 21, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Rei Hashimoto, Shinji Saito, Tomohiro Takase, Tsutomu Kakuno, Yuichiro Yamamoto, Kei Kaneko
  • Patent number: 11201260
    Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: December 14, 2021
    Assignee: XIAMEN CHANGELIGHT CO., LTD.
    Inventors: Zhi Wan, Gang Yao, Xiangjing Zhuo, Zhiwei Lin
  • Patent number: 11169328
    Abstract: A photonic structure is provided. The photonic structure includes a semiconductor substrate, a buried oxide layer over the semiconductor substrate, an optical coupling region over the buried oxide layer, and an oxide structure embedded in the semiconductor substrate. The optical coupling region is tapered toward a terminus of the optical coupling region located at an edge of the semiconductor substrate. The optical coupling region overlaps the oxide structure in a plan view.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chan-Hong Chern, Min-Hsiang Hsu
  • Patent number: 11158994
    Abstract: A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the substrate is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: October 26, 2021
    Assignee: Silanna UV Technologies Pte Ltd
    Inventors: Johnny Cai Tang, Petar Atanackovic
  • Patent number: 11152540
    Abstract: A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: October 19, 2021
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 11152543
    Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: October 19, 2021
    Assignee: SOKO KAGAKU CO., LTD.
    Inventors: Akira Hirano, Yosuke Nagasawa
  • Patent number: 11145789
    Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: October 12, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
  • Patent number: 11139456
    Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies periodically such as distributed Bragg reflectors, aligned nematic liquid crystals, and holographically recorded gratings.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: October 5, 2021
    Assignee: RED BANK TECHNOLOGIES LLC
    Inventors: John N. Magno, Gene C. Koch
  • Patent number: 11133436
    Abstract: A light emitting element includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer disposed over the first conductivity type semiconductor layer; a first electrode and a second electrode disposed over the second conductivity type semiconductor layer and spaced apart from each other; and a light emitting layer disposed over the second conductivity type semiconductor layer and, in a top view, positioned between the first electrode and the second electrode.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: September 28, 2021
    Assignee: NICHIA CORPORATION
    Inventor: Toshihiko Kishino
  • Patent number: 11131914
    Abstract: A wavelength conversion member includes: a substrate; a wavelength converter including phosphor particles excited by excitation light and a binder layer that fixes or adheres the adjacent phosphor particles to one another, the wavelength converter being provided on a front surface side of the substrate; and a light reflecting film that reflects fluorescent light radiated by the phosphor particles, the light reflecting film being provided on at least a part of an interface between the substrate and the wavelength converter, wherein a refractive index of the phosphor particles is larger than a refractive index of the binder layer. It is preferable that the binder layer include nanogaps which are voids with an average diameter of 300 nm or less in an inside.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: September 28, 2021
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tatsuya Okuno, Masahiro Nakamura, Youshin Lee
  • Patent number: 11127914
    Abstract: A light emitting device includes a plurality of unit light emitting regions on a substrate. At least one of the unit light emitting regions includes at least one pair of first and second electrodes that are spaced apart, at least one first bar-type LED in a first layer on the substrate, and at least one second bar-type LED in a second layer on the substrate. At least one of the first bar-type LED or the second bar-type LED is electrically connected between the first electrode and the second electrode.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: September 21, 2021
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Deok Im, Jong Hyuk Kang, Dae Hyun Kim, Joo Yeol Lee, Chi O Cho, Hyun Min Cho
  • Patent number: 11126058
    Abstract: The present invention provides a highly reliable, high-speed, and low-loss semiconductor optical modulation element that protects a pin junction structure in a modulation region against reverse voltage ESD by configuring an additional capacity having a thyristor structure between a plurality of feeding pad electrodes. An n-type contact layer, an n-type cladding layer, a non-doped core/cladding layer, a p-type cladding layer, and a p-type contact layer are sequentially laminated on the substrate surface. A Mach-Zehnder interferometric waveguide and a plurality of feeding pad installation sections are formed by dry etching. The n-type contact layer and the n-type cladding layer are removed except for a modulation region of the Mach-Zehnder interferometric waveguide and a feeding region in which the feeding pad installation sections are formed so that the modulation region and the semiconductor of the lower part of the feeding region are electrically isolated from each other.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: September 21, 2021
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Yoshihiro Ogiso, Hiroyasu Mawatari, Nobuhiro Kikuchi
  • Patent number: 11121290
    Abstract: A barrier free quantum dot particles film includes a free standing layer comprising shielded quantum dot particles; wherein the shielded quantum dot particles are formed by shielding quantum dot particles by at least one shielding method; wherein the shielded quantum dot particles are characterized in resisting at least one condition selected from the group consisting of high temperature, high humidity and water; and wherein the shielded quantum dot particles are dispersed in an acrylate adhesive. A method of fabricating a barrier free quantum dot particles free standing film is also disclosed. The method of fabrication of shielded quantum dot particles film on a light emitting diode (LED) lens is also disclosed.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: September 14, 2021
    Assignee: Nano and Advanced Materials Institute Limited
    Inventors: Chi Ho Kwok, Chi Hin Wong, Wing Yin Yung, Chenmin Liu