Abstract: Provided are a quantum dot display panel, a preparation method, and a display device. The quantum dot display panel includes a backlight module, a quantum dot color filter structure, a first reflecting layer and a second reflecting layer. The quantum dot color filter structure is positioned on a light exit side of the backlight module. The quantum dot color filter structure includes at least a red quantum dot color filter unit, a green quantum dot color filter unit and a composite quantum dot color filter unit. The first reflecting layer is arranged on a side of the quantum dot color filter structure facing away from the backlight module. The first reflecting layer covers the red quantum dot color filter unit and the green quantum dot color filter unit. The second reflecting layer is arranged on a side of the backlight module facing away from the quantum dot color filter structure.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A display apparatus including a display substrate, a plurality of light emitting devices disposed on the display substrate, at least one of the light emitting devices including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, and a molding layer covering side surfaces of the light emitting devices and exposing upper surfaces thereof, in which the third LED sub-unit is disposed closer to an upper surface of the light emitting device than the first LED sub-unit.

Abstract: A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite from the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. A diameter of each of the plurality of first holes is less than a wavelength of light generated by the light-emitting layer. A distance between adjacent first holes of the plurality of first holes is less than the wavelength of light generated by the light-emitting layer.

Abstract: A thin film transistor includes a semiconductor layer, a first gate electrode disposed at one side of the semiconductor layer, a first gate insulating layer disposed between the first gate electrode and the semiconductor layer, a second gate electrode and a third gate electrode disposed at another side of the semiconductor layer, and a second gate insulating layer. The second gate electrode is separated from the third gate electrode. The second gate insulating layer is disposed between the second and third gate electrodes and the semiconductor layer. An orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the second gate electrode on the semiconductor layer. The orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the third gate electrode on the semiconductor layer.

Abstract: The present disclosure provides a micro-light-emitting diode display apparatus and a method of manufacturing the same. Provided is a micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus including a driving circuit substrate, a first electrode provided on the driving circuit substrate, one or more micro-light-emitting diodes (LEDs) provided on the first electrode, an insulating layer provided on the one or more micro-LEDs, a via pattern provided in the insulating layer, electrical contacts provided in the via pattern, and a second electrode provided on the electrical contacts, wherein the via pattern exposes a portion of the one or more micro-LEDs.

Abstract: A method for manufacturing a three-dimensional semiconductor diode device comprises providing a substrate comprising a silicon substrate and a first oxide layer formed on the silicon substrate; depositing a plurality of stacked structures on the substrate, each of the stacked structures comprising a dielectric layer and a conductive layer; etching the stacked structures through a photoresist layer which is patterned to form at least one trench in the stacked structures, a bottom of the trench exposing the first oxide layer; depositing a second oxide layer on the stacked structures and the trench; depositing a high-resistance layer on the second oxide layer, the high-resistance layer comprising a first polycrystalline silicon layer and a first conductive compound layer; and depositing a low-resistance layer on the high-resistance layer, the low-resistance layer comprising a second polycrystalline silicon layer and a second conductive compound layer.

Abstract: A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

Abstract: A capacitor includes an active layer, a gate insulation layer on the active layer, a gate electrode on the gate insulation layer, an interlayer insulating layer on the gate electrode, and a first electrode on the interlayer insulating layer and connected to the active layer through at least one contact hole.

Abstract: A display device, includes: a substrate including pixel areas and a transmissive area between the pixel areas; a pixel circuit layer including at least one transistor on each of the pixel areas; and a light-emitting element layer on the pixel circuit layer and including at least one light-emitting element at each of the pixel areas and coupled to the at least one transistor, and a transparent organic layer at the transmissive area, wherein the light-emitting element layer further includes: a first electrode at the pixel areas, a first inorganic layer at the first electrode, an organic layer covering the first inorganic layer and the transparent organic layer, and a second inorganic layer on the organic layer.

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

Abstract: A display device includes a display unit. The display unit includes a light emitting unit and a light converting layer disposed on the light emitting unit. The display unit emits a green output light under an operation of a highest gray level. The green output light has an output spectrum, wherein an intensity integral of the output spectrum from 380 nm to 489 nm is defined as a first intensity integral, an intensity integral of the output spectrum from 490 nm to 780 nm is defined as a second intensity integral, a ratio of the first intensity integral over the second intensity integral is defined as a first ratio, and the first ratio is greater than 0% and less than or equal to 7.5%.

Abstract: A display, system and method of providing a display are described. The display includes sets of microLEDs. Each set of microLEDs corresponds to one of a plurality of pixels of the display and produces a combination of light that forms a color of the corresponding one of the pixels. Lenses control an emission angle and emission profile of the light emitted by the sets of microLEDs. Each set of microLEDs has a red microLED that emits red light, a green microLED that emits green light, a blue microLED that emits blue light, and another microLED that emits light along a red-green locus. The red-green locus light is selected to enhance efficiency at a white point to compensate for reduced emission from the red microLED dependent on a size of the red microLED.

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

Abstract: A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Abstract: A drive backboard includes: a first conductive layer including bonding pins and first connecting lines, an insulating layer including first via holes and second via holes, a second conductive layer including connecting electrodes and second connecting lines and a conductive protective layer including first protective structures and second protective structures. The first via hole exposes the bonding pin, one end of a first connecting line electrically connects a bonding pin, and the other end reaches the second via hole. One end of a second connecting line electrically connects a connecting electrode, and the other end electrically connects the first connecting line through the second via hole. The first protective structure covers the bonding pin, and the second protective structure covers the second connecting line formed at the position of the second via hole. The pattern of the conductive protective layer is complementary to the pattern of the insulating layer.

Abstract: A pixel structure and a manufacturing method therefor, an array substrate, and a display device are provided. The pixel structure includes a pixel electrode, an active layer, a source/drain electrode layer, and a common electrode which are located on a base substrate. The pixel electrode is located between the base substrate and the common electrode. The source/drain electrode layer includes a first electrode and a second electrode which are electrically connected to the active layer, and the second electrode is electrically connected to the pixel electrode. The active layer is located between the base substrate and the source/drain electrode layer. The active layer includes a first surface close to the source/drain electrode layer. The source/drain electrode layer includes a second surface close to the active layer. Partial edge of the first surface is aligned with partial edge of the second surface.

Abstract: A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: A display, system and method of providing a display are described. The display includes sets of microLEDs. Each set of microLEDs corresponds to one of a plurality of pixels of the display and produces a combination of light that forms a color of the corresponding one of the pixels. Lenses control an emission angle and emission profile of the light emitted by the sets of microLEDs. Each set of microLEDs has a red microLED that emits red light, a green microLED that emits green light, a blue microLED that emits blue light, and another microLED that emits light along a red-green locus. The red-green locus light is selected to enhance efficiency at a white point to compensate for reduced emission from the red microLED dependent on a size of the red microLED.

Abstract: A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.

Abstract: A method of producing an optoelectronic lighting device includes providing a laser chip carrier on which two edge emitting laser chips, arranging a carrier including two optical elements onto the laser chip carrier, forming a respective optical connection by an optical material between a respective laser facet and a respective optical element, singulating the two laser chips by dividing the laser chip carrier between the two laser chips to form two mutually divided laser chip carrier parts, wherein the dividing includes dividing the carrier between the two optical elements to form two mutually divided carrier parts each including one of the two optical elements, such that two singulated laser chips arranged on the respective divided laser chip carrier part are formed, the respective laser facets of which are optically connected to the respective optical element of the respective carrier part by the optical material.

Abstract: An OLED display and associated methods, including a substrate; a first electrode; a second electrode; and an organic emission layer between the first and second electrodes, the organic emission layer including first-third organic emission layers, wherein the third organic emission layer is commonly disposed on the first electrode in the first-third subpixels, the first organic emission layer is in the first subpixel, the second organic emission layer is on the third organic emission layer in the first to third subpixels, an intermediate layer is between the first organic emission layer and the third organic emission layer in the first subpixel and between the second organic emission layer and the third organic emission layer in the second subpixel, and a HTL is between the first organic emission layer and the intermediate layer in the first subpixel and between the second organic emission layer and the intermediate layer in the second subpixel.

Abstract: An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain electrode and an active layer, a first electrode electrically connected to the drain electrode and disposed at a pixel area, and a second electrode covering an upper and a side surface of the source electrode. The second electrode is spaced apart from the first electrode.

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

Abstract: Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: A display panel is provided, which includes a transparent substrate, a first thin film transistor (TFT), a second TFT, a transparent bottom electrode, a capacitance layer, a transparent top electrode, an opposite substrate and a display medium layer. The transparent substrate has a display region and a peripheral region. The display region has sub-pixel regions, and at least one sub-pixel region at least includes a capacitance region and a transistor region. The first and the second TFTs are disposed on the transistor region of the transparent substrate. The transparent bottom electrode, the capacitance layer and the transparent top electrode are sequentially disposed on the capacitance region of transparent substrate, in which the transparent bottom electrode is connected to a source/drain electrode of the first TFT, and the transparent top electrode is connected to a source/drain electrode of the second TFT.

Abstract: A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer.

Abstract: Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract: The present invention provides a pixel structure including a substrate, a first metal pattern layer, an insulating layer, a second metal pattern layer, a passivation layer, and a conductive protection layer. The substrate has at least one pixel region. The first patterned metal layer is disposed on the substrate, and has a top surface. The insulating layer is disposed on the first patterned metal layer and the substrate, and is in contact with the top surface of the first patterned metal layer. The second patterned metal layer is disposed on the insulating layer in the pixel region, and includes a source and a drain. The passivation layer is disposed on the second patterned metal layer and the insulating layer. A top surface of the source is in contact with the passivation layer, and the conductive protection layer is disposed on the drain.

Abstract: A light emitting device includes a serially-connected LED array of a plurality of LED cells epitaxially formed on a substrate. The LED array includes a first LED cell, and a second LED cell adjacent to each other, and a serially-connected LED sub-array including at least three LED cells intervening the first and the second LED cells. Each LED cell includes a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein the distance between the first semiconductor layer of the first LED cell and that of the second LED cell is larger than 30 ?m, and one of the first semiconductor layers and/or one of the second semiconductor layers of the LED cells includes a round corner with a radius of curvature not less than 15 ?m.

Abstract: A display panel includes a lower substrate, an upper substrate and a liquid crystal layer. The liquid crystal layer includes a plurality of domains, a horizontal domain boundary texture area and a vertical domain boundary texture area. The domains are disposed in a matrix shape. The horizontal domain boundary texture area extends in a first direction in a boundary between the domains adjacent to each other in a second direction and has a slope of a liquid crystal slowly (e.g., less) inclined compared to that of the domains. The vertical domain boundary texture area extends in the second direction in a boundary between the domains adjacent to each other in the first direction and has a width larger than that of the horizontal domain boundary texture area.

Abstract: A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.

Abstract: In a chip package, semiconductor dies in a vertical stack of semiconductor dies or chips (which is referred to as a ‘plank stack’) are aligned by positive features that are mechanically coupled to negative features recessed below the surfaces of adjacent semiconductor dies. Moreover, the chip package includes an interposer plate at approximately a right angle to the plank stack, which is electrically coupled to the semiconductor dies along an edge of the plank stack. In particular, electrical pads proximate to a surface of the interposer plate (which are along a stacking direction of the plank stack) are electrically coupled to pads that are proximate to edges of the semiconductor dies by an intervening conductive material, such as solder balls or spring connectors. Note that the chip package may facilitate high-bandwidth communication of signals between the semiconductor dies and the interposer plate.

Abstract: The present invention provides a photovoltaic cell having a large short-circuit current density and a large photoelectric conversion efficiency.

Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.

Abstract: An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths ?1 and ?2, respectively, where the inequalities of ?1<?2 and d1<d2 are satisfied.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity.

Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract: A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.