METHOD OF MAGNETIC MEIDA MANUFACTURING
The embodiments disclose a method of creating a mask by depositing a protection layer that mechanically strengthens patterned features that are imprinted into a resist layer that is deposited onto a magnetic layer, implanting mechanically strengthened patterned resist layer features into the magnetic layer using ion implantation and removing the resist layer and the mask to expose at least a portion of the magnetic layer.
Patterning of recording stacks may have side-effects including size deformation and feature position shifting in stacks including bit-patterned media (BPM) as feature densities have increased for example a density of 0.5 Tera dots per square inch (Td/in2) and above.
In a following description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration a specific example in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present embodiments.
General Overview:It should be noted that the descriptions that follow, for example, in terms of a method of magnetic media manufacturing is described for illustrative purposes and the underlying system can apply to any number and multiple types of stacks. In one embodiment, the conformal protection layer can be configured using a first thickness of conformal protection layer materials. The conformal protection layer can be configured to include a sacrificial layer of a second thickness of conformal protection layer materials and can be configured to include a third thickness of conformal protection layer materials of one embodiment.
The conformal deposition of a protection layer on imprinted resist layer on a magnetic layer on top of a substrate 100 is used for bonding imprint resist features 150 and protecting imprint resist features from damage caused by other processing 154 and eliminates a de-scum process 170. The partial etch-back and planarization to create a mask 110 eliminates a reverse tone mask formation process 180 releasing stress formed during processes including reverse tone mask formation 158. Lessening the number of steps used in stack fabrication processing 190 and using the conformal protection layer created mask is used for reducing pattern feature size deformation and dislocations 160 thereby increasing pattern feature uniformity 165 in patterned stacks including bit patterned media (BPM) including BPM with pattern densities greater than 0.5 Tera dots per square inch (Td/in2) of one embodiment.
Detailed Description:The first thickness of conformal protection layer materials 210 is processed using a partial etch-back and planarization 110 including an isotropic plasma etch 240 and slanted beam milling 242 to a level above the tops of the imprinted resist layer 244 creating a mask 246. Creating a mask 246 eliminates a reverse tone mask formation process 180. Processing description continue as shown in
A partial etch-back and planarization of the third thickness of conformal deposited materials 270 using processes including an isotropic plasma etch 240 and slanted beam milling 242 to the conformal protection layer stops on the tops of the imprinted resist features 272 creating a high selectivity mask 280. Creating a high selectivity mask 280 eliminates a reverse tone mask formation process 180 releasing stress formed during reverse tone mask formation 274. Further processing is described in
Following ion implantation 310 cleaning mask and resist residue above the magnetic layer by lifting it off 130 includes using lift off cleaning processes 320 including solvent 322, baking 324 and plasma strip 326. The lift off cleaning processes 320 includes using solvent, baking and plasma strip processes separately or in combinations prior to a deposition of a carbon over coat (COC) layer 140. The deposition of carbon over coat (COC) layer protects the patterned magnetic layer during back-end processing including lube, buff, etc. 340.
Lessening the number of steps used in stack fabrication processing 190 produces reduced cost of stack manufacturing 330. The conformal protection layer protecting imprint resist features from damage caused by other processing 154 by bonding imprint resist features 150 of
An ion implantation in magnetic layer 450 using ion beam exposure 455 is used to pattern the magnetic layer 402 using the imprinted resist features 406 and mask. The ion beam exposure 455 passes through the etch-backed first thickness of conformal protection layer 440 and imprinted resist features 406 into the magnetic layer 402 to the substrate 400. The ion beam exposure 455 is used for creating ion implanted magnetic layer materials 312 and magnetic layer magnetic patterned recording features 314 including for example dots in a bit patterned media (BPM) of one embodiment. The processing is further described in
The deposition of a carbon over coat (COC) layer 140 uses chemical vapor deposition (CVD) 212 in creating a COC protection layer 490. Creating a COC protection layer 490 is used for protecting the ion implanted magnetic layer materials 312 and magnetic layer magnetic patterned recording features 314 in the magnetic layer 402 above the substrate 400 prior to fabrication processes that follow of one embodiment.
Conformal Protection Layer Stop:A process is used for etching back the third thickness of conformal protection layer to the stop 530 using an isotropic plasma etch back 534. The etching back to conformal protection layer stop 510 creates an etched back third thickness of conformal protection layer 540 used for creating a high selectivity mask 538. Creating a high selectivity mask 538 is used for transferring the imprinted resist features 406 of the imprinted resist layer 404 to the magnetic layer 402 deposited on the substrate 400 of one embodiment. The processing is further described in
The cleaning mask and resist residue above the magnetic layer 470 using a lift off using baking and plasma strip 550 is removing the etched back third thickness of conformal protection layer 540, conformal protection layer stop 510 and imprinted resist layer 404. The cleaning mask and resist residue above the magnetic layer 470 is exposing the ion implanted magnetic layer materials 312 and magnetic layer magnetic patterned recording features 314 in the magnetic layer 402 of one embodiment. Descriptions of continuing processes are shown in
The foregoing has described the principles, embodiments and modes of operation of the present embodiments. However, the invention should not be construed as being limited to the particular embodiments discussed. The above described embodiments should be regarded as illustrative rather than restrictive, and it should be appreciated that variations may be made in those embodiments by workers skilled in the art without departing from the scope of the present embodiments as defined by the following claims.
Claims
1. A method comprising:
- depositing a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and
- creating the magnetic recording features in areas not underneath the resist features through ion implantation.
2. (canceled)
3. The method of claim 1, wherein the deposition of the conformal protection layer comprises performing chemical vapor deposition (CVD).
4. The method of claim 1, wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC).
5. The method of claim 1, further comprising etching at least a portion of the conformal protection layer by performing an isotropic plasma etch.
6-7. (canceled)
8. The method of claim 1, further comprising lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination.
9-20. (canceled)
21. An apparatus, comprising:
- means for depositing a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and
- an ion implantation system configured to create the magnetic recording features in areas not underneath the resist features.
22. The apparatus of claim 21, wherein the means for depositing the conformal protection layer comprises a chemical vapor deposition (CVD) system.
23. The apparatus of claim 21, wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC).
24. The apparatus of claim 21, further comprising an isotropic plasma etcher configured to etch at least a portion of the conformal protection layer.
25. The apparatus of claim 21, further comprising means for lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination.
26. The apparatus of claim 21, further comprising a chemical vapor deposition system configured to deposit a carbon over-coat (COC) layer.
27. The apparatus of claim 21, further comprising a sputtering system configured to deposit a carbon over-coat (COC) layer.
28. An apparatus comprising:
- a deposition system configured to deposit a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and
- an ion implantation system for creating the magnetic recording features in areas not underneath the resist features.
29. The apparatus of claim 28, wherein the deposition system comprises a chemical vapor deposition (CVD) system.
30. The apparatus of claim 28, wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC).
31. The apparatus of claim 28, further comprising an isotropic plasma etcher configured to etch at least a portion of the conformal protection layer.
32. The apparatus of claim 28, further comprising means for lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination.
33. The apparatus of claim 28, further comprising a chemical vapor deposition system configured to deposit a carbon over-coat (COC) layer.
34. The apparatus of claim 28, further comprising a sputtering system configured to deposit a carbon over-coat (COC) layer.
35. The method of claim 1, further comprising depositing a carbon over-coat (COC) layer over the magnetic layer through CVD.
Type: Application
Filed: Mar 12, 2013
Publication Date: Jun 26, 2014
Inventors: Michael Feldbaum (San Jose, CA), Koichi Wago (Sunnyvale, CA), David Kuo (Palo Alto, CA)
Application Number: 13/797,819
International Classification: G11B 5/84 (20060101);