Abstract: According to one embodiment, a head suspension assembly includes a support plate, a wiring member on the support plate, and a magnetic head mounted on the wiring member. The magnetic head includes a slider, a head element, connection pads, and a laser oscillation element on the slider. The wiring member includes a plurality of first connection terminals each having a bonding surface bonded to a connection pad of the slider and a second connection terminal including a bonding surface bonded to a connection pad of the laser oscillation element and a non-bonding surface opposite to the bonding surface. The wiring member includes a cover layer covering at least a part of the non-bonding surface of the second connection terminal.

Abstract: A method of fabricating a near field transducer (NFT) in a thermally assisted magnetic recording (TAMR) head is disclosed. In some embodiments, the method includes: depositing a dielectric layer and a template layer on a waveguide core; patterning the template layer to form a template; depositing an Au NFT layer; planarizing the Au NFT layer to generate a planar layer; depositing an upper NFT layer; applying a peg patterning mask; etching the upper NFT layer and the planar layer that includes the Au NFT layer; removing the template; and depositing a dielectric material and planarizing an upper surface that includes the upper NFT layer.

Abstract: The disclosure relates to a press plate for creating deep structures in panel-like products, for example in wood-based boards or laminates made of resin-coated papers, composed of a metallic base body, in which strip-shaped and/or frame-like webs, which have a higher thermal conductivity than the base body, are inserted in depressions provided.

Abstract: The present disclosure concerns a method for fabricating a magnetoresistive element comprising a magnetic tunnel junction including a tunnel barrier layer, a first ferromagnetic layer and a second ferromagnetic layer; a writing current layer; and an interconnect layer configured for supplying the writing current to the writing current layer. A gap is provided in the interconnect layer such that the latter comprises two discontinuous interconnect segments extending along a layer plane and connecting the writing current layer in series. The method comprises: depositing the interconnect layer, writing current layer, second ferromagnetic layer, tunnel barrier layer and first ferromagnetic layer; forming the gap in the interconnect layer; filling the gap with the gap material; and forming the pillar by performing a single etch step until the interconnect layer, acting as a stop layer, is reached.

Abstract: An embedded device includes a substrate including a magnetic random access memory (MRAM) region, the MRAM region having a cell block region, magnetic tunnel junction (MTJ) modules in the cell block region, each of the MTJ modules including a MTJ pattern, an insulating interlayer structure covering the MTJ modules, and magnetic field shielding structures in the insulating interlayer structure and adjacent to an outside of the cell block region, each of the magnetic field shielding structures extending in a vertical direction to face at least from an upper end of the MTJ pattern to a lower end of the MTJ pattern, and each of the magnetic field shielding structures including a ferromagnetic material.

Abstract: A main object of the present disclosure is to provide a reflection-type optical encoder scale capable of sufficiently reducing the reflectance on a low reflection region. The present disclosure achieves the object by providing a reflection-type optical encoder scale comprising a high reflection region and a low reflection region alternately placed on a substrate, wherein the low reflection region includes a low reflection portion including a metallic chromium film formed on the substrate, and a chromium oxide film and a chromium nitride film randomly formed on the metallic chromium film; and the high reflection region has higher reflectance of incident light from opposite side to the substrate of the reflection-type optical encoder scale, than the low reflection region.

Abstract: A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.

Abstract: A heat-assisted magnetic recording head comprises a near-field transducer (NFT). The NFT comprises a near-field emitter configured to heat a surface of a magnetic disk, and a hybrid plasmonic disk. The hybrid plasmonic disk comprises a plasmonic region and a thermal region. The plasmonic region comprises a first material or alloy that is a plasmonic material or alloy. The thermal region comprises a second material or alloy that is different than the first material or alloy.

Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

Abstract: A heat-assisted magnetic recording head includes a near-field transducer (NFT). The NFT includes a near-field emitter configured to heat a surface of a magnetic disk, and a plasmonic disk. The plasmonic disk is coupled to the near-field emitter and includes rhodium or iridium.

Abstract: A magnetic field detection device, containing a) a first soft magnetic body containing a1) a first plate including a first surface having a first outer edge; and a2) a first protrusion disposed directly or indirectly on the first surface of the first plate at a first arrangement position set back from the first outer edge, the first protrusion including a first tip on an opposite side to the first surface; and b) a magnetic detector provided in a vicinity of the first tip, wherein the magnetic detector has a magnetic sensing direction along the first surface, and the first protrusion is capable of bending a direction of a first magnetic flux, which comes into the first plate, along the first surface.

Abstract: The present disclosure relates to a magnetic recording head having dual layer leading shield or leading edge shield (LES). The layer closest to the main pole of the magnetic recording head has a shallow flare to enhance shape anisotropy while the layer farthest away from the main pole has a steep flare to initiate reversal of the direction of magnetization for the layer during the initialization. The layer closest to the main pole will retain a direction of magnetization that matches the direction of magnetization of the initialization direction. Both layers are sufficiently thick to ensure a two domain state that is favorable from an energy balance point of view.

Abstract: A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.

Abstract: Methods and systems for imaging and cutting semiconductor wafers and other microelectronic device substrates are disclosed herein. In one embodiment, a system for singulating microelectronic devices from a substrate includes an X-ray imaging system having an X-ray source spaced apart from an X-ray detector. The X-ray source can emit a beam of X-rays through the substrate and onto the X-ray detector, and X-ray detector can generate an X-ray image of at least a portion of the substrate. A method in accordance with another embodiment includes detecting spacing information for irregularly spaced dies of a semiconductor workpiece. The method can further include automatically controlling a process for singulating the dies of the semiconductor workpiece, based at least in part on the spacing information. For example, individual dies can be singulated from a workpiece via non-straight line cuts and/or multiple cutter passes.

Abstract: A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle ? other than 90°. A detection value depends on the direction of the first magnetization.

Abstract: The present disclosure relates to novel compounds, pharmaceutical compositions containing such compounds, and their use in prevention and treatment of cancer and related diseases and conditions. In some embodiments, the compounds disclosed herein exhibit androgen receptor degradation activity.

Abstract: A bottom electrode structure for a magnetic tunnel junction (MTJ) containing device is provided. The bottom electrode structure includes a mesa portion that is laterally surrounded by a recessed region. The recessed region of the bottom electrode structure is laterally adjacent to a dielectric material, and a MTJ pillar is located on the mesa portion of the bottom electrode structure. Such a configuration shields the recessed region from impinging ions thus preventing deposition of resputtered conductive metal particles from the bottom electrode onto the MTJ pillar.

Abstract: A miller, a non-transitory computer readable medium, and a method. The miller may include an ion beam column that may be configured to form a vertical surface in an object by applying a milling process that may include forming a vertical surface by irradiating, for a certain period of time, an area of an upper surface of an object by a defocused ion beam that comprises multiple rays. During the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam. The focal plane of the defocused ion beam is located below the upper surface of the object.

Abstract: According to one embodiment, a suspension assembly includes a support plate having a distal end portion and a base end portion, a wiring member having a gimbal portion and provided on the support plate, and a magnetic head mounted on the gimbal portion. In the gimbal portion, the wiring member includes a head mounting region where the magnetic head is mounted, and an etching region including a recess located and formed at least partially in the head mounting region. The magnetic head is bonded to the head mounting region of the wiring member by an adhesive filled in the head mounting region and the recess.

Abstract: An NAND or NOR logic device has multiple layers of ferromagnetic material separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. The anti-magnetic response in a layer below a layer magnetized with a polarity is summed in a region which is coupled to an output, the output generating at least one of a NAND, or NOR logic function on applied input magnetization.

Abstract: A method for forming a memory device is provided. The method including forming a memory cell stack over a lower interconnect layer over a substrate, the memory cell stack includes a data storage layer over a bottom metal. A first dielectric layer is formed over the memory cell stack. A first masking layer is formed over the first dielectric layer. The first masking layer overlies a center portion of the first dielectric layer and leaves a sacrificial portion of the first dielectric layer uncovered. A first etch of the first dielectric layer is formed according to the first masking layer. An inter-metal dielectric (IMD) layer is formed over the memory cell stack. A top electrode is formed within the IMD layer over the memory cell stack. An upper interconnect layer is formed over the top electrode. The upper and lower interconnect layers comprise a different material than the top electrode.

Abstract: A production method for a magnetic material, which is expressed by a chemical structure formula Fe(Al1-xMnx)2O4, where 0<x<1, and exhibits ferromagnetism, includes: preparing a mixed aqueous solution by dissolving, in distilled water, Fe nitrate, Al nitrate, and an oxide including Mn, the Fe nitrate, the Al nitrate, and the oxide being parent materials; preparing a metal-citric acid complex by mixing citric acid and ethylene glycol with the mixed aqueous solution; obtaining a precursor by boiling the metal-citric acid complex to a gel and drying the gel; and obtaining the magnetic material by sintering the precursor.

Abstract: The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a plurality of memory cells, each memory cell having a variable impedance that varies in accordance with a respective data value stored therein; and a read circuit configured to read the data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change corresponding to the variable impedance of the selected memory cell.

Abstract: The present disclosure relates to separating parts (e.g., sliders and/or row bars) from an adhesive and carrier during the manufacture of parts to be used in a data storage device such as a hard disc drive.

Abstract: A display substrate and a method of manufacturing a display substrate, the display substrate including a base substrate; a gate electrode on the base substrate; an insulation layer on the gate electrode; a source electrode and a drain electrode on the insulation layer and overlapping the gate electrode; and a pixel electrode electrically connected to the drain electrode, wherein a cavity is formed between the gate electrode and the insulation layer.

Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

Abstract: The magnetic recording medium includes a non-magnetic support; a non-magnetic layer including a non-magnetic powder and a binding agent on the non-magnetic support; and a magnetic layer including a ferromagnetic powder, a binding agent, and a non-magnetic powder on the non-magnetic layer, in which a skewness Rsk obtained using an atomic force microscope in a measurement region of a surface of the magnetic layer having a size of 5 ?m×5 ?m is greater than 0, a maximum peak height Rmax is equal to or smaller than 30.0 nm, and the number of projections having a height equal to or greater than 10 nm is equal to or greater than 10, and a magnetic recording and reproducing device including: this magnetic recording medium; and a magnetic head.

Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

Abstract: A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks. The process of manufacture, in one embodiment, includes patterning a mask, after patterning the mask, etching (a) through a first layer of electrically conductive material to form an electrically conductive electrode and (b) through a third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure. The process further includes providing insulating material on or over the sidewalls of the second synthetic antiferromagnetic structure and, thereafter, etching through (a) a second tunnel barrier layer to provide sidewalls thereof, (b) a second layer of ferromagnetic material to provide sidewalls thereof, (c) a first tunnel barrier layer to provide sidewalls thereof, and (d) a first layer of ferromagnetic material to provide sidewalls of the first synthetic antiferromagnetic structure.

Abstract: A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.

Abstract: A magnetic head, according to one embodiment, includes a rowbar substrate having a tape support surface and a gap surface at a substrate edge. A closure is positioned opposite the gap surface of the rowbar substrate, the closure forming a portion of the tape support surface. A recessed gap region is interposed between the gap surface of the rowbar substrate and the closure, the recessed gap region having a recessed gap profile that extends between the gap surface of the rowbar substrate and the closure, the recessed gap region having a transducer row with at least one magnetic sensor on the gap surface of the rowbar substrate. An insulation layer is positioned over the recessed gap profile of the recessed gap region.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.

Abstract: A process and device is disclosed for etching a magnetroresistive random access memory device which includes at least one magnetic tunnel junction stack structure which includes an insulating layer disposed between first and second magnetic layers. The process includes the step of contacting a substrate with a chlorine containing plasma at a temperature no greater than 30 degrees Centigrade under conditions effective to convert at least a portion of the first and second magnetic layers and the insulating layer into metal chlorides. Next, the resulting product of the contacting step is treated with an organic solvent under conditions effective to remove the metal chlorides. The treatment can include rinsing away the metal chlorides either by dissolving the metal chlorides, or by reacting the metal chlorides with a reactive organic solvent, or both.

Abstract: A method for recording a magnetic resonance data set relating to a region that is moved at least partly and periodically includes prompting a trigger signal. The method also includes emitting a saturation pulse to at least partially saturate magnetization of an examination region as a function of the trigger signal.

Abstract: A magnetoresistive (MR) sensor shield shields against both down track and cross-track interference and is formed in a single deposition step. A “tail” portion of the shield is eliminated by including a non-magnetic material adjacent to opposite sides of a middle portion of the sensor stack.

Abstract: A recording head that includes a bearing surface and a write pole having a front surface that forms a portion of the bearing surface. The recording head also includes a side shield for the write pole. The side shield includes a low saturation magnetization cap layer having a front surface that forms a portion of the bearing surface. The side shield also includes a main side shield layer having a saturation magnetization that is higher than a saturation magnetization value of the low saturation magnetization cap layer.

Abstract: A method includes forming a write pole layer having a front surface, a leading surface, a trailing surface and side surfaces connecting the leading surface to the trailing surface. The method also includes forming side shield layers proximate to the side surfaces of the write pole layer. A patterned sacrificial layer is deposited over the side shield layers, and a trailing surface bevel is formed on the write pole layer.

Abstract: A method and system provides a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) transducer. The method and system include forming the disk of the NFT and forming the pin of the NFT. The disk is formed from a first material. The pin is formed from a second material different from the first material. The pin contacts the disk. At least a portion of the pin is between the disk and an air-bearing surface (ABS) location.

Abstract: A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard mask sidewall is etch transferred through the remaining MTJ layers including a reference layer, free layer, and tunnel barrier between the free layer and reference layer. The etch transfer may be completed in a single RIE step that features a physical component involving inert gas ions or plasma, and a chemical component comprised of ions or plasma generated from one or more of methanol, ethanol, ammonia, and CO. In other embodiments, a chemical treatment with one of the aforementioned chemicals, and a volatilization at 50° C. to 450° C. may follow an etch transfer through the MTJ stack with an ion beam etch or plasma etch involving inert gas ions.

Abstract: This ion milling device is provided with a vacuum chamber (105), an exhaust device (101) for evacuating the interior of the vacuum chamber, a sample stage (103) for supporting a sample (102) to be irradiated inside the vacuum chamber, a heater (107) for heating the interior of the vacuum chamber, a gas source (106) for introducing into the vacuum chamber a gas serving as a heating medium, and a controller (110) for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes).

Abstract: A method for fabricating a magnetic core includes depositing a magnetic layer on a dielectric layer, forming a first photoresist layer on the magnetic layer and patterning the first photoresist layer, etching the magnetic layer through the patterned first photoresist layer, in which a first section of the magnetic layer exposed by the first photoresist layer remains on the dielectric layer after the magnetic layer is etched, removing the patterned first photoresist layer, forming a second photoresist layer on the magnetic layer and patterning the second photoresist layer, etching the magnetic layer through the patterned second photoresist layer, and removing the second photoresist layer.

Abstract: A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Abstract: A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks. The process of manufacture, in one embodiment, includes patterning a mask, after patterning the mask, etching (a) through a first layer of electrically conductive material to form an electrically conductive electrode and (b) through a third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure. The process further includes providing insulating material on or over the sidewalls of the second synthetic antiferromagnetic structure and, thereafter, etching through (a) a second tunnel barrier layer to provide sidewalls thereof, (b) a second layer of ferromagnetic material to provide sidewalls thereof, (c) a first tunnel barrier layer to provide sidewalls thereof, and (d) a first layer of ferromagnetic material to provide sidewalls of the first synthetic antiferromagnetic structure.

Abstract: A second protective film is formed by applying high-viscosity resin by an inkjet method, in two patterns that extend parallel to and along a boundary between a first protective film and a plating film, the boundary being sandwiched between the two patterns. A low-viscosity resin is applied between these first and second patterns of the second protective film by the inkjet method. The low-viscosity resin has a viscosity that is lower than that of the high-viscosity resin for forming the second protective film, and a fluidity that is higher than that of the high-viscosity resin and thus, leaks and spreads into a gap between the first protective film and the plating film. The third protective film adheres to the first and second patterns, is formed across the boundary between the first protective film and the plating film, and is embedded in the gap whereby the gap is plugged.

Abstract: An optical device and a method of manufacturing an optical device, including a ridge waveguide second, and a strip-loaded ridge waveguide section, comprises applying two different protective layers and two separate etches at two different depths. The protective layers overlap to protect the same section of the optical device, and to limit the surfaces of optical device to exposure to multiple etches, except at edges where the protective layers overlap.

Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

Abstract: A semiconductor structure includes a substrate, a hole which includes a top hole and a bottom hole in communication with each other in the substrate, and a filler in the top hole and the bottom hole, wherein the top hole tapers toward the bottom hole, and a side surface of the top hole and a side surface of the bottom hole form an obtuse angle.

Abstract: A method for manufacturing a glass substrate comprises a surface processing step of performing surface processing for forming unevenness on a glass surface. In the surface processing step, protruded portions having a height of 1nm or more from an average line of a roughness curve are dispersedly formed on the glass surface. In the surface processing step, the surface processing is performed such that a protruded portion area ratio is 0.5 to 10%. The protruded portion area ratio is a ratio of an area of the protruded portions with respect to an area of any rectangular region. The rectangular region has a square shape with a side length of 1 ?m. In the surface processing step, in a case where the rectangular region is equally divided into at least one hundred divided regions having a square shape, the surface processing is performed such that a protruded portion content ratio is 80% or more.