Method for manufacturing microphone chip
A method for manufacturing a microphone chip, includes steps of: providing a first underlay, and depositing insulating oxide layers at both sides; depositing the component layers on the insulating oxide layers respectively; depositing the tetraethyl orthosilicate oxide layers on the component layers; etching the tetraethyl orthosilicate oxide layers; patterning various deposition layers in the first underlay; providing the second underlay; depositing the oxide layers on the substrate; etching and patterning oxide layer; releasing the back plate; combining the first underlay and the second underlay by welding the tetraethyl orthosilicate oxide layer on the first underlay and the oxide layer on the second underlay under ambient temperature; etching the second underlay to form the back cavity; etching the first underlay to release the diaphragm and obtaining the microphone chip.
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The present invention relates to a method for manufacturing a microphone, and more particularly to a method for manufacturing a chip of a MEMS microphone.
DESCRIPTION OF RELATED ARTSo far, in all the methods of manufacturing the microphone based on the semi-conductor material, polycrystalline silicon is deposited on the substrate to form the diaphragm and back plate, due to the deposit of multi-layer structure, the processes including the high temperature bonding etc. make it hard to control the stress of the diaphragm and back plate, it is very hard to improve its sensitivity and consistency.
Therefore, it is necessary to provide an improved method for a microphone chip to overcome above disadvantage.
Many aspects of the embodiment can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the present disclosure. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
The present invention will hereinafter be described in detail with reference to an exemplary embodiment. To make the technical problems to be solved, technical solutions and beneficial effects of present disclosure more apparent, the present disclosure is described in further detail together with the figures and the embodiment. It should be understood the specific embodiment described hereby is only to explain this disclosure, not intended to limit this disclosure.
Referring to
A method for manufacturing the microphone chip includes the following steps:
Step I (S1): as shown in
Step II (S2): as shown in
Step III (S3): As shown in
Step IV (S4): as shown in
Step V (S5): as shown in
Step VI (S6): as shown in
Step VII (S7): as shown in
Step VIII (S8): as shown in
Step IX (S9): as shown in
Step X (S10): as shown in
Step XI (S11): as shown in
Step XII (S12): as shown in
In this embodiment, it combines the tetraethyl orthosilicate oxide layer and the oxide layer with the oxide layer of the second underlay by welding under ambient temperature, in order to maintain the inherent stress from the component layer of the microphone chip in the similar stress area, meanwhile, it can also reduce the impact to the component layer from the externally thermal stress. In addition, the composite diaphragm structure has many preheating intervals that can be used for adjusting the stress of the component layer by aiming at different product; the manufacturing method doesn't need additional plasma processing procedure, in order to reduce the processing steps.
It is to be understood, however, that even though numerous characteristics and advantages of the present exemplary embodiment have been set forth in the foregoing description, together with details of the structures and functions of the embodiment, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms where the appended claims are expressed.
Claims
1. A method for manufacturing a microphone chip, comprising the steps of:
- Step I: Providing a first underlay including a first surface and a second surface opposite to the first surface, and then depositing insulating oxide layers on the first surface and second surface respectively;
- S2: Depositing a component layer on the insulating oxide layers of the first surface and second surface respectively;
- S3: Depositing a tetraethyl orthosilicate oxide layer on the surfaces of the component layers on the first surface and the second surface respectively;
- S4: Etching the tetraethyl orthosilicate oxide layer on the first surface of the first underlay for exposing the component layer, while removing the entire tetraethyl orthosilicate oxide layer on the second surface;
- S5: Patterning the insulating oxide layer, component layer and tetraethyl orthosilicate oxide layer on the first surface with the photoetching technology;
- S6: Providing a second underlay including a substrate with a third surface and the fourth surface corresponding opposite to the third surface, and a oxide layer and monocrystalline silicon layer deposited on the third surface;
- S7: Depositing oxide layers on the monocrystalline silicon layers of the described fourth surface and third surface respectively;
- S8: Etching the oxide layer on the monocrystalline silicon layer and then patterning this oxide layer with the photoetching technology for forming a plurality of anti-stick protrusions;
- S9: Etching acoustic holes in the monocrystalline silicon layer for releasing the back plate;
- S10: Combining the first underlay and the second underlay by contacting the tetraethyl orthosilicate oxide layer on the first surface of the first underlay to the oxide layer on the surface of the monocrystalline silicon layer of the second underlay; combining the tetraethyl orthosilicate oxide layer and the oxide layer on the surface of the monocrystalline silicon layer by welding under ambient temperature;
- S11: Etching the oxide layers on the substrate of the second underlay and the fourth surface for forming a back cavity;
- S12: Etching to the component layer from the second surface of the first underlay, for releasing the diaphragm and obtain the microphone chip.
2. The method of manufacturing a microphone chip as described in claim 1, wherein, between the procedure S3 and S4, it also involves passivation finish to the first surface of the first underlay.
3. The method of manufacturing a microphone chip as described in claim 2, wherein before the procedure S10, it involves passivation finish to the first surface of the first underlay and the third surface of the second underlay, and then cleaning the described first surface and third surface.
4. The method of manufacturing a microphone chip as described in claim 3, wherein, the first underlay is grinded and the component layer and insulating oxide layer on the second surface of the first underlay should be removed.
5. The method for manufacturing the microphone chip as described in claim 4, wherein, between the procedure S10 and S11, the first underlay and second underlay that are combined together should be annealed under low temperature.
6. The method of manufacturing the microphone chip as described in claim 5, wherein, the described annealing temperature should be between 700° C.˜900° C.
7. The method of manufacturing the microphone chip as described in claim 1, wherein, the insulating oxide layer is a silicon oxide layer.
8. The method of manufacturing the microphone chip as described in claim 1, wherein, the component layer is polycrystalline silicon layer.
9. The method of manufacturing the microphone chip as described in claim 1, wherein, after the S12, a step of depositing the conduction layers on the first underlay and the second underlay respectively is further conducted.
10. The method of manufacturing the microphone chip as described in claim 1, wherein, in S10, in the process of welding under the ambient temperature, the scope of the ambient temperature is 22±3° C.
Type: Application
Filed: Oct 19, 2016
Publication Date: Jun 8, 2017
Applicant: AAC Technologies Pte. Ltd. (Singapore city)
Inventors: Goh Wan Ling Serene (Singapore), Loo Li Eng (Singapore), Tan Qiu Yu Veronica (Singapore), Xiaohui Zhong (Singapore), Lin Yih Shung (Singapore), Lai Kah Keen (Singapore)
Application Number: 15/297,516