WAFER SUSCEPTOR
Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.
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The present application is a continuation of International Application No. PCT/CN2020/113762, filed on Sep. 7, 2020, all contents of which are incorporated herein by reference in its entirety.
TECHNICAL FIELDThe present application relates to a semiconductor manufacturing device, in particular to a wafer susceptor used for Metal-Organic Chemical Vapor Deposition (MOCVD).
BACKGROUNDGraphite discs are essential accessories for MOCVD devices. Currently, commonly used graphite discs are generally circular, some grooves are distributed on the graphite discs and used for accommodating substrates, and these substrates are used for growing epitaxial layers. A graphite disc is made of high-purity graphite and coated with SiC coating on its surface. In an epitaxial growth process, a graphite disc with a substrate is heated by radiation using a heating wire in a MOCVD reaction chamber.
Based on the above descriptions, it is necessary to provide a wafer susceptor structure used in a MOCVD device that can effectively improve heating uniformity of a wafer epitaxy.
SUMMARYA purpose of the present application is to provide a wafer susceptor that can effectively improve heating uniformity of a wafer epitaxy by adjusting a shape of a bottom of a groove, to improve quality and epitaxy of III-V group nitride epitaxial growth and intra-wafer wavelength uniformity of a photoelectric epitaxial wafer.
The present application provides a wafer susceptor, including at least one groove, where the groove includes: a groove bottom, where the groove bottom is divided by a first dividing line passing through a center of the groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes: a groove bottom surface; and a convex structure, formed on the groove bottom surface, where an edge of the convex structure is located on the groove bottom surface, the edge of the convex structure does not coincide with an edge of the groove bottom surface, and the groove bottom has an uncovered region that is not covered by the convex structure. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region.
As an optional technical solution, the first dividing line is a straight line, and the first dividing line is perpendicular to a first center line passing through the center of the wafer susceptor and the center of the groove; or the first dividing line is an arc with the center of the wafer susceptor as a center and a distance between the center of the wafer susceptor and the center of the groove as a radius.
As an optional technical solution, a surface of the convex structure is a curved surface, the curved surface is provided with a vertex, and a projection of the vertex on a horizontal plane is located in the second region of the groove bottom.
As an optional technical solution, the projection of the vertex on the horizontal plane is located on a first center line.
As an optional technical solution, an area of the uncovered region in the first region is larger than that of the uncovered region in the second region.
As an optional technical solution, the uncovered region includes a first uncovered region and a second uncovered region, the first uncovered region and the second uncovered region are respectively distributed on both sides of the first center line, and the first uncovered region and the second uncovered region are distributed symmetrically or asymmetrically about the first center line.
As an optional technical solution, the first uncovered region is provided with a first trench, and an included angle between a horizontal plane and a side surface, close to the center of the groove, of the first trench is a first inclination angle θ1, where 0 ≤ θ1 ≤ 90°; and the second uncovered region is provided with a second trench, and an included angle between the horizontal plane and a side surface, close to the center of the groove, of the second trench is a second inclination angle θ2, where 0 ≤ θ2 ≤90°.
As an optional technical solution, where the first inclination angle θ1 is equal or unequal to the second inclination angle θ2.
As an optional technical solution, where an opening area of the first trench is equal or unequal to an opening area of the second trench.
As an optional technical solution, where the curved surface of the convex structure is composed of innumerable curves staring from the vertex to the edge of the convex structure, a curvature radius of each of the innumerable curves is a fixed value; a point, closest to the center of the wafer susceptor, on the edge of the convex structure is a first edge point, and a point, farthest away from the center of the wafer susceptor, on the edge of the convex structure is a second edge point; and curvature radii of the innumerable curves gradually decrease from the first edge point to the second edge point along the edge of the convex structure.
Compared with the prior art, the present application has the following technical effects.
A groove bottom of a wafer susceptor in the present application is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface, a surface of the convex structure is a curved surface, a vertex of the curved surface is located in the second region of the groove bottom, and the groove bottom has an uncovered region that is not covered by the convex structure. The uncovered area has a downward trench. A design structure of the groove bottom of the wafer susceptor well resolves a problem of a relatively large gap between a III-V group nitride wafer and the groove bottom due to a centrifugal force and a convex structure, to constantly maintain a reasonable gap between the wafer susceptor and the wafer subjected to a rotational centrifugal force of the wafer susceptor, which reduces an impact of the centrifugal force on growth of the wafer, guarantees stable temperature and air flow, and enables a thermal field to be distributed more evenly, thereby improving quality of the epitaxial wafer and wavelength uniformity of the light-emitting epitaxial wafer, and increasing yield. Therefore, the wafer susceptor in this application has an extensive application prospect in fields of semiconductor manufacturing devices designing and manufacturing.
To make the foregoing and other purposes, features, and advantages of this application more obvious and understandable, the following describes optional embodiments below in detail in combination with the accompanying drawings.
The following clearly describes the technical solutions in the embodiments of this application in combination with the accompanying drawings in the embodiments of this application.
An average height of the convex structure located in a second region is greater than that of the convex structure located in a first region.
The groove 20 includes a groove bottom and a groove side portion. The groove bottom is divided by a first dividing line L1 into a first region S1 close to the center C of the wafer susceptor and a second region S2 away from the center C of the wafer susceptor. The first dividing line L1 passes through a center O of the groove. The groove bottom includes a groove bottom surface and a convex structure 210 formed on the groove bottom surface. An edge of the convex structure 210 is located on the groove bottom surface, the edge of the convex structure 210 does not coincide with an edge of the groove bottom surface, and the groove bottom has an uncovered region 230 that is not covered by the convex structure 210. An average height of the convex structure 210 located in the second region S2 is greater than that of the convex structure 210 located in the first region S1. Due to a rotational centrifugal force of the wafer susceptor 10, the wafer 30 moves in a direction away from the center C of the wafer susceptor, but the convex structure at the groove bottom makes a gap between a part of the wafer 30 away from the center C of the wafer susceptor 10 and the bottom of the wafer susceptor 10 relatively large, which results in a relatively large difference in the distance between the wafer and the bottom of the groove 20. In the present application, a distribution location and a height distribution of the convex structure 210 at the groove bottom are adjusted, so that a height of a part of the convex structure away from the center C of the wafer susceptor is increased properly, and a height of a part of the convex structure close to the center C of the wafer susceptor is reduced properly, to maintain a reasonable gap between the groove 20 of the wafer susceptor 10 and the wafer 30 subjected to a rotational centrifugal force of the wafer susceptor, which reduces an impact of the centrifugal force on growth of the wafer, guarantees stable temperature and air flow, and enables a thermal field to be distributed more evenly, thereby improving quality of the epitaxial wafer.
As shown in
Specifically, as shown in
According to the foregoing embodiments of the present application, a location of the vertex of the convex structure 210 and a location distribution and height distribution of the convex structure 210 at the groove bottom are adjusted, so that a height of a part of the convex structure away from the center C of the wafer susceptor is increased properly, to constantly maintain a reasonable gap between the groove 20 of the wafer susceptor 10 and a wafer subjected to a rotational centrifugal force of the wafer susceptor, thereby reducing an impact of the centrifugal force on growth of the wafer. A trench structure is provided in the uncovered region of the groove bottom, to further adjust a structure of the groove bottom, so that the structure of the groove 20 is better adapted to growth of the wafer, to offset an impact of a centrifugal force in a growth process.
In addition, distribution positions of the convex structure 210 and the uncovered region 230 at the groove bottom are subject to actual application requirements, and can be designed with reference to factors such as a location of a radiant heat source, a direction of airflow, and a size of the airflow.
In conclusion, a groove bottom of a wafer susceptor in the present application is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface, a surface of the convex structure is a curved surface, a vertex of the curved surface is located in the second region of the groove bottom, and the groove bottom has an uncovered region that is not covered by the convex structure. The uncovered area has a downward trench. A design structure of the groove bottom of the wafer susceptor well resolves a problem of a relatively large gap between a III-V group nitride wafer and the groove bottom due to a centrifugal force and a convex structure, to constantly maintain a reasonable gap between the wafer susceptor and the wafer subjected to a rotational centrifugal force of the wafer susceptor, which reduces an impact of the centrifugal force on growth of the wafer, guarantees stable temperature and air flow, and enables a thermal field to be distributed more evenly, thereby improving quality of the epitaxial wafer and wavelength uniformity of the light-emitting epitaxial wafer, and increasing yield. Therefore, the wafer susceptor in this application has an extensive application prospect in fields of semiconductor manufacturing devices designing and manufacturing.
In this application, the wafer susceptor may be made of graphite. However, a material of the wafer susceptor is not particularly limited in this application. A person in the art know that, another material may be selected according to a design requirement. The foregoing descriptions are merely preferred embodiments of this application, but are not intended to limit this application. For a person skilled in the art, various changes and variations can be made in this application. Any modification, equivalent replacement, or improvement made without departing from the spirit and principle of this application shall fall within the protection scope of this application.
Claims
1. A wafer susceptor, comprising at least one groove, wherein the groove comprises:
- a groove bottom, wherein the groove bottom is divided by a first dividing line passing through a center of the groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor, and the groove bottom comprises:
- a groove bottom surface; and
- a convex structure, formed on the groove bottom surface, wherein an edge of the convex structure is located on the groove bottom surface, the edge of the convex structure does not coincide with an edge of the groove bottom surface, and the groove bottom has an uncovered region that is not covered by the convex structure,
- wherein an average height of the convex structure located in the second region is greater than that of the convex structure located in the first region.
2. The wafer susceptor according to claim 1, wherein the first dividing line is a straight line, and the first dividing line is perpendicular to a first center line passing through the center of the wafer susceptor and the center of the groove.
3. The wafer susceptor according to claim 1, wherein the first dividing line is an arc with the center of the wafer susceptor as a center and a distance between the center of the wafer susceptor and the center of the groove as a radius.
4. The wafer susceptor according to claim 1, wherein a surface of the convex structure is a curved surface, the curved surface is provided with a vertex, and a projection of the vertex on a horizontal plane is located in the second region of the groove bottom.
5. The wafer susceptor according to claim 4, wherein the projection of the vertex on the horizontal plane is located on a first center line, and the first center line passes through the center of the wafer susceptor and the center of the groove.
6. The wafer susceptor according to claim 1, wherein an area of the uncovered region in the first region is larger than that of the uncovered region in the second region.
7. The wafer susceptor according to claim 1, wherein the uncovered region comprises a first uncovered region and a second uncovered region, the first uncovered region and the second uncovered region are respectively distributed on both sides of a first center line, and the first uncovered region and the second uncovered region are distributed symmetrically or asymmetrically about the first center line, wherein the first center line passes through the center of the wafer susceptor and the center of the groove.
8. The wafer susceptor according to claim 7, wherein the first uncovered region and the second uncovered region are independent of each other.
9. The wafer susceptor according to claim 7, wherein the first uncovered region and the second uncovered region are connected to each other as a whole.
10. The wafer susceptor according to claim 9, wherein a width of the uncovered region on the first center line is d1, and a distance, on the first center line, from the center of the groove to the edge of the groove bottom surface is R, 0 ≤ d1 ≤ ⅟6R.
11. The wafer susceptor according to claim 7, wherein the first uncovered region is provided with a first trench, and an included angle between a horizontal plane and a side surface, close to the center of the groove, of the first trench is a first inclination angle θ1, wherein 0 ≤ θ1 ≤ 90°; and the second uncovered region is provided with a second trench, and an included angle between the horizontal plane and a side surface, close to the center of the groove, of the second trench is a second inclination angle θ2, wherein 0 ≤ θ2 ≤ 90°.
12. The wafer susceptor according to claim 11, wherein the first inclination angle θ1 is equal or unequal to the second inclination angle θ2.
13. The wafer susceptor according to claim 11, wherein an opening area of the first trench is equal or unequal to an opening area of the second trench.
14. The wafer susceptor according to claim 11, wherein the first trench and the second trench are connected to form an integral trench, and the integral trench is located in the first region.
15. The wafer susceptor according to claim 5, wherein the curved surface of the convex structure is composed of innumerable curves staring from the vertex to the edge of the convex structure, a curvature radius of each of the innumerable curves is a fixed value.
16. The wafer susceptor according to claim 15, wherein a point, closest to the center of the wafer susceptor, on the edge of the convex structure is a first edge point, and a point, farthest away from the center of the wafer susceptor, on the edge of the convex structure is a second edge point; and curvature radii of the innumerable curves gradually decrease from the first edge point to the second edge point along the edge of the convex structure.
17. The wafer susceptor according to claim 16, wherein a distance from the projection of the vertex on the horizontal plane to the center of the groove is d, and a distance, on the first center line, from the center of the groove to the edge of the groove bottom surface is R, 0 ≤ d ≤ ⅟6R.
Type: Application
Filed: Dec 2, 2022
Publication Date: Apr 6, 2023
Applicant: ENKRIS SEMICONDUCTOR, INC. (Suzhou)
Inventors: Kai CHENG (Suzhou), Liyang ZHANG (Suzhou)
Application Number: 18/073,862