Power semiconductor module

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Description

FIG. 1 is a front perspective view of a power semiconductor module showing my new design;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a left side elevational view thereof;

FIG. 5 is a right side elevational view thereof;

FIG. 6 is a top plan view thereof;

FIG. 7 is a bottom plan view thereof; and,

FIG. 8 is an exploded perspective view of a power semiconductor module showing my new design.

The broken lines illustrate portions of the power semiconductor module and form no part of the claimed design.

Claims

The ornamental design for power semiconductor module as shown.

Referenced Cited
U.S. Patent Documents
D653633 February 7, 2012 Soyano
D673914 January 8, 2013 Witkowski
D853342 July 9, 2019 Auer
D859321 September 10, 2019 Li
D900355 October 27, 2020 Schrama
D920937 June 1, 2021 Umeda
D967772 October 25, 2022 Katou
D1014444 February 13, 2024 Ishigami
D1078669 June 10, 2025 Bogen
20100295572 November 25, 2010 Ryu
20130260592 October 3, 2013 Lee
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20230341436 October 26, 2023 Arai
Patent History
Patent number: D1122883
Type: Grant
Filed: Nov 11, 2024
Date of Patent: Apr 21, 2026
Inventor: Chin-Feng Lin (New Taipei City)
Primary Examiner: Rosemary K Tarcza
Application Number: 29/972,564