Power semiconductor module
Description
The broken lines illustrate portions of the power semiconductor module and form no part of the claimed design.
Claims
The ornamental design for power semiconductor module as shown.
Referenced Cited
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Patent History
Patent number: D1122883
Type: Grant
Filed: Nov 11, 2024
Date of Patent: Apr 21, 2026
Inventor: Chin-Feng Lin (New Taipei City)
Primary Examiner: Rosemary K Tarcza
Application Number: 29/972,564
Type: Grant
Filed: Nov 11, 2024
Date of Patent: Apr 21, 2026
Inventor: Chin-Feng Lin (New Taipei City)
Primary Examiner: Rosemary K Tarcza
Application Number: 29/972,564
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)