Semiconductor element
- Canon
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Description
FIG. 1 is a front elevational view of a semiconductor element showing my new design;
FIG. 2 is a rear elevational view thereof;
FIG. 3 is a top plan view thereof;
FIG. 4 is a bottom plan view thereof; and
FIG. 5 is a left side elevational view thereof, the right side elevational view being the same.
Referenced Cited
U.S. Patent Documents
Foreign Patent Documents
3833753 | September 1974 | Garboushian |
3846734 | November 1974 | Pauza et al. |
4663833 | May 12, 1987 | Tanaka et al. |
0235503 | September 1987 | EPX |
0197839 | December 1982 | JPX |
0219949 | December 1984 | JPX |
0217651 | October 1985 | JPX |
0172352 | August 1986 | JPX |
Patent History
Patent number: D317592
Type: Grant
Filed: Jul 2, 1987
Date of Patent: Jun 18, 1991
Assignee: Canon Kabushiki Kaisha (Tokyo)
Inventor: Tetsuo Yoshizawa (Yokohama)
Primary Examiner: Susan J. Lucas
Assistant Examiner: Joel Sincavage
Law Firm: Fitzpatrick, Cella, Harper & Scinto
Application Number: 7/69,579
Type: Grant
Filed: Jul 2, 1987
Date of Patent: Jun 18, 1991
Assignee: Canon Kabushiki Kaisha (Tokyo)
Inventor: Tetsuo Yoshizawa (Yokohama)
Primary Examiner: Susan J. Lucas
Assistant Examiner: Joel Sincavage
Law Firm: Fitzpatrick, Cella, Harper & Scinto
Application Number: 7/69,579
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)