Abstract: Structures and methods are disclosed in which a layer stack can be formed with a plurality of layers of a metal, where each of the layers of metal can be separated by a layer of a dielectric. An opening in the layer stack can be formed such that a semiconductor layer beneath the plurality of layers of the metal is uncovered. One or more vertical channel structures can be formed within the opening by epitaxial growth. The vertical channel structure can include a vertically oriented transistor. The vertical channel structure can include an interface of a silicide metal with a first metal layer of the plurality of metal layers. The interface can correspond to one of a source or a drain connection of a transistor. The silicide metal can be annealed above a temperature threshold to form a silicide interface between the vertical channel structure and the first metal layer.

Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate by using a processing gas; a rotary table that is rotatably provided in the processing chamber; a stage on which the substrate is to be placed and that is configured to be rotatable relative to the rotary table at a position spaced apart from a center of rotation of the rotary table, a lift pin configured to be displaced relative to the stage to raise and lower the substrate; and a housing configured to house the lift pin when the lift pin is not unexposed from the stage. The lift pin and the housing have a closing structure that closes a gap between the lift pin and the housing.

Abstract: A backside reveal method includes providing a semiconductor material substrate, depositing an epitaxial high-k etch stop layer on the semiconductor material substrate, forming an integrated circuit device layer on the epitaxial high-k etch stop layer, and attaching a carrier substrate to a front side of the integrated circuit device layer. The method further includes removing a portion of a thickness of the semiconductor material substrate to leave a remaining portion of the thickness of the semiconductor material substrate, removing, by a first selective etching, the remaining portion of the semiconductor material substrate, and removing, by a second selective etching, the epitaxial high-k etch stop layer to expose a backside of the integrated circuit device layer. The epitaxial high-k etch stop layer has good lattice match and high etch selectivity relative to the semiconductor material substrate.

Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening; (b) forming a first layer containing a nitrogen atom and a hydrogen atom by using a first processing gas, on a side wall of a recess that is formed in the etching target film corresponding to the opening; (c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas; and (d) after (c), etching the recess by using a third processing gas.

Abstract: A method of processing a substrate that includes receiving a patterned photoresist formed over a substrate, the patterned photoresist defining initial openings, each of the initial openings including a first side and an opposite second side along a first direction; depositing a mask material preferentially on the first side within the initial openings using an oblique deposition process performed at a first angle inclined from the first side; and removing a portion of the patterned photoresist using an oblique etch process performed at a second angle inclined from the second side, the mask material and a remaining portion of the patterned photoresist defining final openings.

Abstract: A semiconductor device includes a transistor structure that includes a two-dimensional (2D) material around at least a dielectric structure. The transistor structure includes a first source/drain structure in contact with the first 2D material. The transistor structure includes a second source/drain structure in contact with the 2D material. The transistor structure includes a gate structure around at least the 2D material.

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.

Abstract: A controller is configured to control a liquid supply to change a landing position of a liquid on a surface of a substrate continuously by discharging the liquid toward the surface of the substrate from a first liquid discharge nozzle while moving the first liquid discharge nozzle. The controller is also configured to derive discharge position deviation information of the liquid supply by comparing first temperature information based on a spot temperature measured by a temperature measurement device when the first liquid discharge nozzle is moved along a first nozzle path and second temperature information based on the spot temperature measured by the temperature measurement device when the first liquid discharge nozzle is moved along a second nozzle path which is different from the first nozzle path.

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

Abstract: A substrate processing apparatus includes a processing container, a stage, an edge ring, a lifter, and circuitry. The stage has a first mounting surface and a second mounting surface. The edge ring is placed on the second mounting surface. The lifter moves the edge ring with respect to the second mounting surface. Plasma processing of the substrate is performed while the substrate is positioned on the first mounting surface. Further, a first cleaning process is performed in which a first bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface and then a second cleaning process is formed in which a second bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface.

Abstract: Conformal semiconductor chucks are disclosed. The semiconductor chucks can include a first portion comprising a first vacuum pad. The semiconductor chucks can include a second portion exhibiting greater compliance than either of the first portion or a third portion. The semiconductor chucks can include the third portion comprising a second vacuum pad.

Abstract: A system and a method directed to a monitoring system of semiconductor processing chambers is provided. In particular, monitoring of any chemical formation on a chamber and a wafer of a semiconductor processing chamber using in-situ laser induced fluorescence is provided. The monitoring system and method detect issues before they become a problem for the semiconductor processing chambers by providing diagnosis on chamber health and mechanisms for associated process shifts with a faster turnaround time.

Abstract: A part transporting device for transporting a consumable part includes a part housing, a container, a robot arm, and a moving mechanism. The part housing accommodates an unused consumable part and a used consumable part. The container has an opening to be connected to a processing device and a gate valve for opening or closing the opening, the container being configured to accommodate the part housing. The robot arm is provided in the container and has at least one end effector at a tip end thereof, the robot arm transferring the used consumable part from the processing device through the opening to accommodate the used consumable part in the part housing and transferring the unused consumable part from the part housing to load the unused consumable part into the processing device through the opening. The moving mechanism has a power source and is configured to move the part transporting device.

Abstract: A system includes a vacuum chamber having a wafer chuck therein and side windows slanted relative to the wafer chuck. A wafer stage is positioned below the wafer chuck and configured to rotate the wafer chuck and move the wafer chuck vertically. Illumination optics, including an illumination corrector lens, are configured to receive light and direct the light through an illumination vacuum window of the side windows to an optical spot on the wafer. Collection optics, including a collection corrector lens, are configured to receive the light from the optical spot through a collection vacuum window of the side windows and direct the light to a detector. A transfer module is configured to move the illumination optics and the collection optics parallel to the illumination vacuum window and the collection vacuum window respectively. The illumination corrector lens and the collection corrector lens are configured to reduce chromatic aberration.

Abstract: A processing liquid is sent to a discharge nozzle through a processing liquid valve to discharge the processing liquid from the discharge nozzle toward a substrate. The processing liquid valve controls a flow of the processing liquid in a flow channel that is connected to the discharge nozzle, depending on a pressure of a working fluid that is supplied thereto. A fluid pressure adjustment unit adjusts behavior of a variation of a pressure of the working fluid that is supplied to the processing liquid valve, depending on an adjustment parameter that is set variably. The processing liquid that is sent to the discharge nozzle through the processing liquid valve is limited to stop discharge of the processing liquid from the discharge nozzle. Correlation data are acquired between a working fluid parameter that indicates behavior of a variation of a pressure of the working fluid and the adjustment parameter.

Abstract: There is provided a maintenance device comprising: a case having an opening whose size corresponds to a second gate of a vacuum processing device disposed in a processing chamber having a first gate and the second gate different from the first gate, the first gate and the second gate being used for loading and unloading substrates, the opening being capable of being attached to the second gate in a detachable manner and an airtight manner; a depressurization mechanism configured to reduce a pressure in the case; and a suction mechanism disposed in the case and configured to enter the processing chamber through the opening and conduct suction of deposits on an object in the processing chamber.

Abstract: A liquid processing apparatus includes multiple stages on each of which a substrate is to be placed; multiple nozzles shared by the multiple stages, and each for supplying a processing liquid to the substrate; a camera shared by the multiple nozzles, and for monitoring states of the multiple nozzles; and an imaging condition changing program module for causing circuitry to change an imaging condition of the camera according to a monitoring condition.

Abstract: A measuring system according to an exemplary embodiment acquires a measurement value indicating electrostatic capacitance between a measuring device and a transport fork for transporting the measuring device. The transport fork includes a target electrode. The measuring device includes a first sensor provided on a base board. The first sensor includes a central electrode and peripheral electrodes. The central electrode acquires electrostatic capacitance for reflecting a distance with the target electrode. The peripheral electrodes are disposed around the central electrode to acquire electrostatic capacitance for reflecting an amount of deviation in a horizontal direction with respect to the target electrode of the transport fork.