Abstract: A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.

Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to mov

Abstract: A detecting method includes: supplying a bias power to a lower electrode, and supplying a source power to an upper electrode or the lower electrode; and detecting an output value of a sensor attached to a chamber. The detecting the output value of the sensor includes (a) specifying a first phase of a bias waveform for each cycle of the bias waveform, (b) specifying a second phase of a source waveform after a predetermined first time elapses from a timing when the first phase is specified, and (c) sampling the output value of the sensor after a predetermined second time elapses from a timing when the second phase is specified. The steps (a) to (c) are repeated for each cycle of the bias waveform.

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

Abstract: A substrate processing apparatus includes a carrier block on which a carrier configured to store a substrate is placed, first processing block including a plurality of first processing modules, and a first transport mechanism shared by the plurality of first processing modules to transport the substrate, second processing block overlapping the first processing block, including a plurality of second processing modules, and a second transport mechanism shared by the plurality of second processing modules to transport the substrate, and configured to transport the substrate to the carrier block. The substrate processing apparatus includes a lifting and transferring mechanism including a shaft extending in a horizontal direction and a support part configured to face and support the substrate, and a rotation mechanism configured to rotate the support part around the shaft such that an orientation of the support part is changed between a first orientation and the second position.

Abstract: A substrate processing method is provided. The method includes a) causing a substrate to be attracted to an electrostatic chuck, and b) processing the substrate. The method includes c) determining a charge removal temperature based on information preliminarily stored in a storage, thereby adjusting a surface temperature of the electrostatic chuck to be greater than or equal to the determined charge removal temperature, the information indicating a relationship between a maximum surface temperature of the electrostatic chuck, during substrate processing, and a residual charge amount for the processed substrate. The method includes d) removing a charge from the processed substrate.

Abstract: An inspection apparatus includes: a probe card having a probe to be in contact with an object to be inspected; an upper module having a mounting portion on which the object to be inspected is mounted; a movement mechanism that is configured to support the upper module to be liftable and lowerable and that is able to move the upper module in a horizontal direction; and a lifting and lowering mechanism that is provided under the movement mechanism and that is able to push up the upper module toward the probe card, wherein an axis passing through a point of action of a pushing force when the lifting and lowering mechanism pushes up the upper module and an axis passing through a point of action of a load received by the probe card are arranged at positions to be common.

Abstract: A plasma processing apparatus includes a plasma chamber that accommodates a substrate having a film including a side wall surface and a bottom surface that define an opening; and a controller that controls a process on the substrate in the plasma chamber. The controller includes a sequencer that performs a sequence including forming a precursor layer on the opening of the film; and generating a plasma to form a protective film on the side wall surface of the opening of the film from the precursor layer and to etch the bottom surface of the opening of the film. The controller simultaneously forms the protective film on the side wall surface of the opening of the film and etches the bottom surface of the opening of the film.

Abstract: A substrate processing apparatus includes a nozzle for discharging a processing solution, a processing solution supply part for supplying the processing solution to the nozzle and a controller. The processing solution supply part includes a tank, a first conduit for guiding the processing solution from the tank to the nozzle, a pump installed in the first conduit, and a filter having first and second spaces, and a filtering member for separating between the first space and the second space. The controller performs a first control process of controlling the processing solution supply part to flow the processing solution from the first space to the second space through the filtering member by the pump, and after the first control process, a second control process of controlling the processing solution supply part to flow the processing solution from the second space to the first space through the filtering member by the pump.

Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

Abstract: A static random access memory (SRAM) structure is provided. The structure includes a plurality of SRAM bit cells on a substrate. Each SRAM bit cell includes at least six transistors including at least two NMOS transistors and at least two PMOS transistors. Each of the at least six transistors being lateral transistors with channels formed from nano-sheets grown by epitaxy. The at least six transistors positioned in two decks in which a second deck is positioned vertically above a first deck relative to a working surface of the substrate, wherein at least one NMOS transistor and at least one PMOS transistor share a common vertical gate. A first inverter formed using a first transistor positioned in the first deck and a second transistor positioned in the second deck. A second inverter formed using a third transistor positioned in the first deck and a fourth transistor positioned in the second deck. A pass gate is located in either the first deck or the second deck.

Abstract: An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Abstract: A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.

Abstract: Aspects of the present disclosure provide a method for improving overlay alignment of patterning by correcting wafer shape. For example, the method can include receiving a wafer having a working surface with at least partially-fabricated semiconductor devices, and a backside surface opposite to the working surface. The method can also include forming a first stressor film on the backside surface. The first stressor film can modify overlay alignment of the working surface in a first direction across the working surface of the wafer. The method can also include forming one or more first semiconductor structures on the working surface of the wafer. The first semiconductor structures are aligned in the first direction.

Abstract: There is provided a shower head electrode assembly of a plasma processing apparatus, comprising: an electrode having a plurality of first gas flow paths and having a surface exposed to plasma; and a backing member attached to the electrode and having a plurality of second gas flow paths which communicate with the plurality of first gas flow paths. Each of the plurality of second gas flow paths is a slit-shaped elongated hole, and is configured such that a length of the elongated hole in radial direction is longer than a length of the elongated hole in circumferential direction with respect to a central axis of the shower head electrode assembly.

Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Abstract: In certain embodiments, a method for processing a semiconductor substrate includes depositing a resin film on a substrate that has microfabricated structures defining recesses. The resin film fills the recesses and covers the microfabricated structures. The method includes performing, using a photoacid generator (PAG)-based process, a localized removal of the resin film to remove the resin film to respective first depths in the recesses, at least two depths of the respective first depths being different depths. The method includes repeatedly performing, using a thermal acid generator (TAG)-based process and until a predetermined condition is met, a uniform removal of a remaining portion of the resin film to remove a substantially uniform depth of the resin film in the recesses.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a chamber having at least one gas inlet and at least one gas outlet, a substrate support in the chamber, a plasma generator and a controller configured to cause (a) placing a substrate on the substrate support, the substrate including a target layer having a recess, (b) exposing the substrate to a silicon-containing precursor, thereby forming an adsorption layer on a sidewall of the recess, (c) generating a plasma from a gas mixture in the chamber, the gas mixture including an oxygen-containing gas and a halogen-containing gas, (d) exposing the substrate to the plasma, thereby forming a protection layer on the adsorption layer while etching a bottom of the recess and (e) repeating (b) to (d) in sequence.

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.