Patents Assigned to Tokyo Electron Limited
  • Publication number: 20240087846
    Abstract: A plasma processing apparatus includes: a chamber; a substrate support including a lower electrode; an upper electrode disposed above the substrate support; a first RF power supply that is electrically connected to the upper electrode and generates a first RF signal, in which the first RF signal has a first power level during a first state within a repeating period and a zero power level during second to fourth states within the repeating period; a second RF power supply that is electrically connected to the lower electrode and generates a second RF signal, in which the second RF signal has a zero power level during the first and second states, a second power level during the third state, and a third power level during the fourth state; and a DC power supply that is electrically connected to the upper electrode and generates a DC signal.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Toshiharu WADA, Weifan CHEN, Tangkuei WANG
  • Publication number: 20240087858
    Abstract: A cleaning method according to the present disclosure includes a first cleaning operation and a second cleaning operation, wherein the first cleaning operation includes: supplying a first processing gas to the interior of the chamber; and cleaning a region including the placement region of the stage by generating a first plasma from the first processing gas in a space defined by the placement region and the electrode, and the second cleaning operation includes: holding a dummy substrate at a predetermined position spaced by a predetermined distance from the placement region to face the placement region; supplying a second processing gas to the interior of the chamber; and cleaning a region including a periphery of the placement region of the stage by generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the predetermined position and the electrode.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yubin YEO, Yuki ONODERA, Takamitsu TAKAYAMA
  • Publication number: 20240087855
    Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Shinsuke OKA
  • Publication number: 20240087857
    Abstract: A plasma processing apparatus includes a substrate support. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is disposed on the base and has a central region and an annular region. The chuck electrode is disposed in the central region. The electrode structure is disposed below the chuck electrode in the central region and is placed in an electrically floating state. The electrode structure includes a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors that connect the first electrode layer and the second electrode layer. At least one bias power supply is electrically coupled to the substrate support.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Chishio KOSHIMIZU, Shoichiro MATSUYAMA, Makoto KATO
  • Patent number: 11928810
    Abstract: An abnormality detection apparatus is provided. The abnormality detection apparatus includes a first generation part configured to generate pseudo-abnormal image data by synthesizing a substantially circular image at a random position of an image of normal image data obtained by photographing equipment that includes a liquid supply and supplies a liquid from the liquid supply without an abnormality, a second generation part configured to generate a determination model for determining whether the equipment is normal or abnormal by performing learning of the normal image data and the pseudo-abnormal image data, an acquisition part configured to acquire image data obtained by photographing the equipment, and a detection part configured detect an abnormality in the equipment from the image data acquired by the acquisition part using the determination model.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: March 12, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Motoi Okada
  • Patent number: 11929269
    Abstract: A control method includes: calculating a correction value after a predetermined process is executed; and controlling a control target based on an output value of at least one of a real sensor and a virtual sensor during execution of the predetermined process. The calculating includes correcting an output value of the virtual sensor. The controlling includes: controlling the control target based on an output value of the real sensor while monitoring a failure of the real sensor; correcting an output value of the virtual sensor with the correction value when the real sensor fails; and switching from a control based on the output value of the real sensor to a control based on the output value of the virtual sensor after the correcting the output value of the virtual sensor.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: March 12, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Tatsuya Yamaguchi
  • Patent number: 11927394
    Abstract: A heat treatment apparatus according to one aspect of the present disclosure includes a vertically long process chamber, a heater configured to heat the process chamber, and a cooler configured to cool the process chamber. The cooler includes a plurality of discharge holes provided at intervals along a longitudinal direction of the process chamber to discharge cooling fluid toward the process chamber and a plurality of shutters provided corresponding to the plurality of discharge holes. At least one of the plurality of shutters is configured to move to an open position independently of other shutters.
    Type: Grant
    Filed: March 17, 2022
    Date of Patent: March 12, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Tatsuya Yamaguchi, Toshiyuki Ito
  • Patent number: 11926891
    Abstract: A cleaning method for removing a silicon-containing film deposited in a temperature-adjustable process container by a heater and a cooler includes: stabilizing a temperature in the process container to a cleaning temperature; and removing the silicon-containing film by supplying a cleaning gas into the process container stabilized at the cleaning temperature; wherein in the removing the silicon-containing film, a heating capability of the heater and a cooling capability of the cooler are controlled based on the temperature in the process container.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: March 12, 2024
    Assignee: Tokyo Electron Limited
    Inventor: Masami Oikawa
  • Patent number: 11929234
    Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: March 12, 2024
    Assignees: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventors: Taro Ikeda, Sumi Tanaka, Satoru Kawakami, Masaki Hirayama
  • Patent number: 11927539
    Abstract: This inspection apparatus is for inspecting an inspection subject device. The inspection subject device is formed on an object to be inspected, and is a reverse-side irradiation-type imaging device into which light enters from the reverse side opposite to the side where a wiring layer is provided. This inspection apparatus has: a placement table having a transparent surface on which the object to be inspected is placed; a light irradiation mechanism that is provided in the placement table and that irradiates the to-be-inspected object placed on the placement table with light through the placement surface; and an acquisition unit that acquires in-plane distribution of illuminance of light from the placement table.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: March 12, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Naoki Akiyama, Hiroyuki Nakayama, Susumu Saito
  • Patent number: 11929240
    Abstract: A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: March 12, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takehiro Ueda
  • Patent number: 11929268
    Abstract: A substrate processing system configured to process a substrate includes a carry-in/out unit configured to carry the substrate from/to an outside thereof; a processing unit configured to process a processing surface of the substrate; a cleaning unit provided between the carry-in/out unit and the processing unit when viewed from a top, and configured to clean the processing surface after being processed in the processing unit; a first transfer unit stacked on top of the cleaning unit, and configured to transfer the substrate; and a second transfer unit provided between the processing unit and the first transfer unit when viewed from the top, and configured to transfer the substrate. The first transfer unit transfers the substrate between the carry-in/out unit and the second transfer unit. The second transfer unit transfers the substrate between the first transfer unit and the processing unit and between the processing unit and the cleaning unit.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: March 12, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Munehisa Kodama
  • Publication number: 20240079246
    Abstract: A method for forming a semiconductor device is disclosed. The method includes forming a first metal layer on top of an amorphous mask layer disposed over a substrate. The method includes forming a second metal layer that extends along vertical sidewalls of an opening in the amorphous mask layer. The method includes forming a first recess partially extending into the substrate using the first metal layer and the second metal layer as a first etch mask. The method includes forming a third metal layer that extends along vertical sidewalls of the first recess. The method includes forming a second recess below the first recess using the first to third metal layers as a second etch mask.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Alec Dorfner, Minjoon Park
  • Publication number: 20240079215
    Abstract: A disclosed substrate processing apparatus includes a processing chamber, a substrate support stage. The substrate support provides at least one recess. The at least one recess opens downward. The at least one supply pipe is configured to supply a heat transfer medium to the at least one recess. The at least one partition forms at least one space together with the substrate support stage. The at least one space include the at least one recess. The at least one collection pipe is configured to collect the heat transfer medium from the at least one space. The at least one flow rate adjusting valve that is connected to the at least one supply pipe. The controller is configured to control the at least one flow rate adjusting valve to adjust a flow rate of the heat transfer medium supplied to the at least one supply pipe.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Tetsuma YAGUCHI, Masanori ASAHARA
  • Publication number: 20240077339
    Abstract: There is a method for measuring a deviation amount of a measuring device, comprising: transferring, by using a transfer device, the measuring device to a position in an area specified by transfer position data; acquiring measurement values using four or more sensor electrodes of the measuring device; identifying two or more sensor electrodes among the four or more sensor electrodes, the two or more sensor electrodes outputting, as the measurement values, capacitances that satisfy a reliability standard; and calculating the deviation amount based on the measurement values of the identified two or more sensor electrodes.
    Type: Application
    Filed: September 4, 2023
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Kimihiro YOKOYAMA, Takayuki HATANAKA, Ryoma KOBAYASHI
  • Publication number: 20240079219
    Abstract: In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a processing chamber, a substrate support stage. The piezoelectric element is disposed around an opening of the second nozzle to reduce a cross-sectional area of the opening of the second nozzle in accordance with a voltage applied thereto. The thermoelectric element is disposed between the first collection pipe and the second collection pipe to generate an electromotive force corresponding to a temperature difference between the heat transfer medium in the first collection pipe and the heat transfer medium in the second collection pipe. The drive circuit is configured to apply a voltage corresponding to a magnitude of the electromotive force, to the piezoelectric element.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Masanori ASAHARA
  • Publication number: 20240079452
    Abstract: A transistor structure is disclosed. The structure includes a first lower metal layer extending along one or more lateral directions. The structure includes a first upper metal layer in parallel with the first lower metal layer, wherein the first lower metal layer and the first upper metal layer are spaced from each other with a first isolation material. The structure includes a first channel extending from the first lower metal layer to the first upper metal layer. The structure includes a first dielectric spacer surrounded by the first channel and further by the first lower metal layer. The structure includes a second dielectric spacer also surrounded by the first channel and further by the first upper metal layer. The structure includes a first gate electrode surrounded by the first channel and vertically interposed between the first dielectric spacer and the second dielectric spacer.
    Type: Application
    Filed: September 7, 2022
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Mark I. Gardner, H. Jim Fulford
  • Publication number: 20240079475
    Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first stack over a substrate, including first dielectric layers and second dielectric layers alternately stacked on top of one another. The method includes replacing a first portion of the first stack with a second stack including first semiconductor layers and second semiconductor layers alternately stacked on top of one another. The method includes removing a second portion of the first stack to expose sidewalls of each of the second semiconductor layers, respectively. The method includes forming, through the removed second portion of the first stack, a pair of first epitaxial structures in contact with a lower one of the second semiconductor layers, respectively. The method includes forming, through the removed second portion of the first stack, a pair of second epitaxial structures in contact with an upper one of the second semiconductor layers, respectively.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Mark I. Gardner, H. Jim Fulford
  • Patent number: 11923170
    Abstract: The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: March 5, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoru Kawakami, Hiroyuki Yamamoto, Taro Ikeda, Masaki Hirayama
  • Patent number: 11919032
    Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 5, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takayuki Ishii, Kazuya Nagaseki, Michishige Saito