Patents Assigned to Tokyo Electron Limited
  • Publication number: 20190221405
    Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.
    Type: Application
    Filed: March 28, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun YAMAWAKU, Chishio KOSHIMIZU, Tatsuo MATSUDO
  • Publication number: 20190221406
    Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus which is disposed in an inner space defined by a processing chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component, wherein a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; transferring the component from the processing chamber to a heating chamber after substrate treatment is performed in the inner space; and heating the component so that depolymerization of the compound forming the film occurs.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takao FUNAKUBO, Ryuichi ASAKO
  • Publication number: 20190218663
    Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus, a surface of the component being included in a surface that defines an inner space formed in a chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component by supplying a first gas and a second gas into the inner space, wherein a compound forming the film is generated by polymerization of a first compound contained in the first gas and a second compound contained in the second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; and removing, after substrate treatment is performed in the inner space, a deposit formed on the film during the substrate treatment by heating the component so that depolymerization of the compound forming the film occurs.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takao FUNAKUBO, Ryuichi ASAKO
  • Publication number: 20190221464
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Application
    Filed: March 22, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Taketoshi TOMIOKA, Hiroki KISHI, Jisoo SUH
  • Patent number: 10354873
    Abstract: Provided is a method of patterning spacers, the method comprising: providing an initial patterned structure in a substrate in a processing chamber, the initial patterned structure comprising an organic mandrel and an underlying layer; exposing the patterned structure in a direct current superposition (DCS) plasma treatment process, the process depositing a layer of a first material on the initial patterned structure; performing an atomic layer conformal deposition process using a second material, the first material providing protection to the organic mandrel at the beginning of the atomic layer conformal deposition process; performing a spacer etch mandrel pull process, the process creating a final patterned structure with a target final sidewall angle; concurrently controlling integration operating variables in the DCS plasma treatment process, the atomic layer conformal deposition process, and the spacer etch mandrel pull process in order to meet the target final sidewall angle and other integration objecti
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: July 16, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Akiteru Ko, Angelique Raley, Sophie Thibaut, Satoru Nakamura, Nihar Mohanty
  • Patent number: 10354915
    Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: July 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tomohisa Hoshino, Masato Hamada, Takashi Tanaka, Yuichiro Inatomi, Yusuke Saito
  • Patent number: 10354896
    Abstract: There is provided a position detection system for use in a processing apparatus including a mounting table configured to mount thereon a disc-shaped target object and a focus ring surrounding a periphery of the mounting table. The system includes a light source configured to generate measurement light, three or more optical elements configured to emit the measurement light as emission light and receive reflected light, a driving unit configured to move each of the optical elements such that a scanning range from the focus ring to the target object is scanned, and a control unit configured to obtain positional relation between the focus ring and the target object based on the reflected light in the scanning range of each of the optical elements.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: July 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kippei Sugita, Kenji Nagai
  • Patent number: 10351952
    Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuo Yabe, Akira Shimizu
  • Patent number: 10354841
    Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: July 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jianping Zhao, Lee Chen, Barton G. Lane, Merritt Funk, Radha Sundararajan
  • Patent number: 10354872
    Abstract: Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A meniscus sensor monitors a position of a meniscus of process fluid at a nozzle. The elongate bladder unit is used to maintain a position of the meniscus at a particular location by selectively expanding or contracting the bladder, thereby moving or holding a meniscus position. Expansion of the elongate bladder is also used for a suck-back action after completing a dispense action.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: July 16, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Anton J. deVilliers, Rodney L. Robison, Ronald Nasman, David Travis, James Grootegoed, Norman A. Jacobson, Jr., David Hetzer, Lior Huli, Joshua S. Hooge
  • Patent number: 10354837
    Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from greater than zero to less than or equal to 60%, and F in a range of greater than zero to less than or equal to 75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: July 16, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Jianping Zhao
  • Publication number: 20190212176
    Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 11, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Masaaki NAGASE, Satoru YAMASHITA, Yohei SAWADA, Kouji NISHINO, Nobukazu IKEDA
  • Publication number: 20190214246
    Abstract: A film forming method for forming a film on a pattern formed on a substrate includes: placing a substrate having a pattern on a pedestal provided in a space configured to perform therein a plasma processing under a reduced pressure environment, an upper electrode configured to supply radio-frequency power being disposed in the space to face the pedestal; adjusting temperature of a main surface of the substrate for each of a plurality of regions on the main surface of the substrate; and after the adjusting, repeating a sequence including a first step of forming a deposition film on the pattern of the substrate and a second step of supplying electric power only to the upper electrode to generate plasma in the space, thereby cleaning the space.
    Type: Application
    Filed: January 9, 2019
    Publication date: July 11, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Takahiro YOKOYAMA
  • Patent number: 10347466
    Abstract: Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3?/8 or less (here, ? is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: July 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takahiro Hirano, Toshihiko Iwao
  • Patent number: 10344382
    Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: July 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideomi Hane, Takahito Umehara, Takehiro Kasama, Tsubasa Watanabe
  • Patent number: 10345246
    Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: July 9, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Xinkang Tian, Ching-Ling Meng, Yan Sun
  • Patent number: 10347482
    Abstract: The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: July 9, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Takayuki Toshima, Shoichi Terada, Junji Nakamura
  • Patent number: 10347742
    Abstract: A method of forming a gate-all-around semiconductor device, includes providing a substrate having a layered fin structure thereon. The layered fin structure includes a channel portion and a sacrificial portion each extending along a length of the layered fin structure, wherein the layered fin structure being covered with replacement gate material. A dummy gate is formed on the replacement gate material over the layered fin structure, wherein the dummy gate having a critical dimension which extends along the length of the layered fin structure. The method further includes forming a gate structure directly under the dummy gate, the gate structure including a metal gate region and gate spacers provided on opposing sides of the metal gate region, wherein a total critical dimension of the gate structure is equal to the critical dimension of the dummy gate.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: July 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jeffrey Smith, Anton Villiers
  • Patent number: 10347503
    Abstract: Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: July 9, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Ian J. Brown, Junjun Liu
  • Patent number: 10347499
    Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: July 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maruyama, Akira Koshiishi, Toshio Haga, Masato Horiguchi, Makoto Kato