Patents Assigned to Tokyo Electron Limited
  • Patent number: 11374101
    Abstract: A semiconductor device includes a first raised feature in a NFET region on a substrate, a first n-type doped epitaxial semiconductor material grown on the first raised feature, the first n-type doped epitaxial material having a first upward facing surface and a first downward facing surface, a first contact metal on the first downward facing surface, and a second contact metal on the first upward facing surface. The device further includes a second raised feature in a PFET region on the substrate, a second p-type doped epitaxial semiconductor material grown on the second raised feature, the second p-type doped epitaxial material having a second upward facing surface and a second downward facing surface, a third contact metal on the second downward facing surface, and a fourth contact metal on the second upward facing surface, wherein the fourth contact metal is different from the second contact metal.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: June 28, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Hiroaki Niimi, Kandabara N Tapily, Takahiro Hakamata
  • Patent number: 11373895
    Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Fumiaki Ariyoshi, Masanori Asahara, Shunsuke Aizawa, Akihito Fushimi
  • Patent number: 11373884
    Abstract: A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: June 28, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Dai Kitagawa, Katsuyuki Koizumi, Tsutomu Nagai, Daisuke Hayashi, Satoru Teruuchi
  • Patent number: 11373883
    Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shota Umezaki, Yoshinori Ikeda
  • Patent number: 11373876
    Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Satoshi Takagi
  • Patent number: 11373886
    Abstract: A substrate processing apparatus includes: a mixer that mixes a first phosphoric acid and an additive serving as raw materials of a processing liquid with each other at a predetermined mixing ratio, thereby preparing a mixed liquid; a mixing ratio corrector that corrects the mixing ratio of the raw materials of the processing liquid; a processing unit that processes a substrate with the processing liquid. The mixer includes a mixing tank that stores the mixed liquid, a first phosphoric acid supply that supplies the first phosphoric acid to the mixing tank, and an additive supply that supplies the additive to the mixing tank. The mixing ratio corrector includes a liquid line through which the mixed liquid is delivered from the mixer to the processing unit, and a second phosphoric acid supply connected to the liquid line so as to supply second phosphoric acid to the liquid line.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hiroshi Yoshida
  • Patent number: 11372058
    Abstract: An impedance matching device includes: a variable capacitor connected between a radio-frequency power supply and a load; a first detector that detects an index value that determines impedance matching between the radio-frequency power supply and the load, and a first state value that indicates a state of a radio-frequency power; a second detector that detects a second state value that indicates a state of radio-frequency power output to the load; an adjustment unit that adjusts a capacitance value of the variable capacitor such that the index value detected by the first detector falls within a target range; and a diagnosis unit configured to diagnose an abnormality of the variable capacitor, the first detector, or the second detector based on the capacitance value adjusted by the adjustment unit, the first state value detected by the first detector, and the second state value detected by the second detector.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hideo Kato
  • Patent number: 11373874
    Abstract: An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Nobuhiro Takahashi, Ayano Hagiwara, Yasuo Asada, Tatsuya Yamaguchi
  • Patent number: 11371143
    Abstract: Provided is a pore-filling method for protecting the pores of a porous material. The method, which is performed using a modified i-CVD technique, involves filling the pores of a porous material with a gas phase monomer within a pressure chamber and subsequently polymerizing the monomer, both within the pores and on the surface of the material as an overburden. The method is solvent-free and can fill and protect pores of any size of any material.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: June 28, 2022
    Assignees: International Business Machines Corporation, Tokyo Electron Limited
    Inventors: Krystelle Lionti, Geraud Jean-Michel Dubois, Willi Volksen, Jacques Faguet
  • Patent number: 11372332
    Abstract: A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl3) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example BxFy gases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Wan Jae Park, Akiteru Ko
  • Publication number: 20220199363
    Abstract: There is provided a plasma processing apparatus comprising: a chamber where a substrate is disposed and processed by plasma generated therein; a substrate attraction portion disposed in the chamber, having therein an electrode, and configured to attract the substrate by a voltage applied to the electrode; a conductive member disposed in the chamber; and a voltage supply configured to apply a voltage to the electrode. A reference potential terminal of the voltage supply is connected to the conductive member, and the voltage supply applies a voltage having as a reference potential a potential of the conductive member to the electrode.
    Type: Application
    Filed: December 23, 2021
    Publication date: June 23, 2022
    Applicant: Tokyo Electron Limited
    Inventor: Yusuke AOKI
  • Publication number: 20220199371
    Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.
    Type: Application
    Filed: December 21, 2021
    Publication date: June 23, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Sho KUMAKURA, Yuta NAKANE
  • Publication number: 20220199412
    Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.
    Type: Application
    Filed: March 11, 2022
    Publication date: June 23, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Takahiro YOKOYAMA, Maju TOMURA, Yoshihide KIHARA, Ryutaro SUDA, Takatoshi ORUI
  • Publication number: 20220199415
    Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to ?40° C. or lower, after the first stage.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 23, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Yusuke TAKINO, Takayuki HOSHI
  • Publication number: 20220199435
    Abstract: A substrate processing system is disclosed, comprising: a vacuum transfer module; a substrate processing module connected to the vacuum transfer module and configured to process a substrate in a depressurized environment; a load-lock module connected to the vacuum transfer module; at least one substrate cooling stage disposed in the load-lock module; at least one substrate transfer robot disposed the vacuum transfer module and having at least one end effector; and a controller configured to control a particle removal operation. The operation includes: cooling at least one dummy substrate placed on said at least one substrate cooling stage to a first temperature; and holding said at least one end effector in any one of a plurality of positions in the vacuum transfer module or the substrate processing module for a first time period in a state where at least one cooled dummy substrate is placed on said at least one end effector.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 23, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Genichi NANASAKI, Daisuke HARA, Hideyuki OSADA, Hikaru NIHEI, Tatsuya MORIOKA, Akihiro MATSUI
  • Patent number: 11367611
    Abstract: There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuji Nishino, Jun Sato
  • Patent number: 11367630
    Abstract: A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Miyako Kaneko, Keiji Tanouchi, Takehiko Orii, Itaru Kanno, Meitoku Aibara, Satoru Tanaka
  • Patent number: 11367642
    Abstract: A substrate processing apparatus includes: a carrier storage rack configured to place and store a carrier that accommodates a substrate; a gas supply configured to supply an inert gas into the carrier placed on the carrier storage rack; and a controller configured to control whether to supply the inert gas into the carrier based on at least one of carrier information and substrate information.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Moriyoshi Kinoshita, Yuji Sasaki, Junichi Sato, Takashi Asakawa
  • Patent number: 11367595
    Abstract: A plasma processing apparatus capable of achieving a uniform plasma space therein is provided. The plasma processing apparatus includes a processing vessel, a mounting table, a shield member, a shutter for an opening configured to be moved up and down, a first driving unit and a second driving unit. The processing vessel has a sidewall, and the sidewall is provided with a transfer path through which a processing target object is carried-in/carried-out. The mounting table is provided within the processing vessel. The shield member is provided along an inner surface of the sidewall to surround the mounting table and provided with an opening facing the transfer path. The first driving unit is configured to move the shutter up and down. The second driving unit is configured to move the shutter in a forward-backward direction with respect to the shield member.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Masaru Isago
  • Patent number: 11367590
    Abstract: A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kosuke Ogasawara, Kentaro Yamaguchi, Takanori Banse