Patents Assigned to Tokyo Electron Limited
  • Publication number: 20240194514
    Abstract: A substrate support disposed inside a plasma processing chamber includes a base electrically connected to at least one power supply, a first dielectric disposed on the base and having a substrate support surface, and a second dielectric disposed on the base to surround the first dielectric and having a ring support surface, wherein the first dielectric includes therein a first heat transfer gas diffusion space, a first electrode disposed above the first heat transfer gas diffusion space, and a conductor that electrically connects the first electrode and the base, and wherein the second dielectric includes therein a second heat transfer gas diffusion space, and a second electrode disposed above the second heat transfer gas diffusion space and electrically connected to a power supply that outputs a common voltage with the base.
    Type: Application
    Filed: February 26, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Makoto KATO
  • Publication number: 20240194459
    Abstract: A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.
    Type: Application
    Filed: January 18, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Kazuya NAGASEKI, Kazuki MOYAMA, Shinji HIMORI, Masanobu HONDA, Satoru TERUUCHI
  • Publication number: 20240194516
    Abstract: Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.
    Type: Application
    Filed: February 19, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Ronald Nasman, Gerrit J. Leusink, Rodney L. Robinson, Hoyoung Kang, Daniel Fulford
  • Publication number: 20240194457
    Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
    Type: Application
    Filed: February 20, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Hajime TAMURA, Yasuharu SASAKI, Shin YAMAGUCHI, Tsuguto SUGAWARA, Katsuyuki KOIZUMI
  • Publication number: 20240194458
    Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
    Type: Application
    Filed: February 20, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Hajime TAMURA, Yasuharu SASAKI, Shin YAMAGUCHI, Tsuguto SUGAWARA, Katsuyuki KOIZUMI
  • Publication number: 20240194504
    Abstract: A processing system includes: a chamber in which a consumable member is installed; a storage module configured to store the consumable member; a position detection sensor configured to detect a position of the consumable member; a vacuum transfer module connected to the chamber and the storage module, the vacuum transfer module having a transfer robot configured to transfer the consumable member between the chamber and the storage module; and a controller. The controller performs processes of: (a) controlling transfer robot to transfer consumable member installed in the chamber to the storage module; (b) detecting position of the consumable member transferred to the storage module by the position detection sensor; and (c) controlling transfer robot to transfer a new consumable member different from the consumable member from the storage module to the chamber at a position adjusted based on the position of the consumable member detected in the process (b).
    Type: Application
    Filed: February 27, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Norihiko AMIKURA, Masatomo KITA
  • Publication number: 20240194507
    Abstract: The storage is configured to store model data generated based on data including, in patterns, a processing condition for substrate processing, an attitude of a movable part that affects a processing result of the substrate processing, and the processing result of the substrate processing. The processing controller is configured to use the model data stored in the storage to control the substrate processing, including control of the processing condition for the substrate processing and control of the attitude of the movable part, according to a condition to be satisfied by the processing result of the substrate processing.
    Type: Application
    Filed: February 23, 2024
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Tsuyoshi MORIYA, Takayuki YAMAGISHI, Haruhiko FURUYA, Kiyoshi MORI
  • Publication number: 20240191356
    Abstract: A disclosed gas supply system includes a gas supply line and a gas recovery line. The gas supply line supplies a heat transfer gas to a gap between a substrate support and a back surface of a substrate. The gas supply line includes first to third portions and a pressure controller. The second portion extends downstream of the first portion. The pressure controller regulates a pressure of the heat transfer gas and is connected between the first portion and the second portion. The third portion connects the second portion and the gap. The gas recovery line is connected to the first and second portions. The gas recovery line includes a pump connected between the first and the second portions. The gas recovery line shares the third portion with the gas supply line. The gas recovery line returns the heat transfer gas from the second portion to the first portion.
    Type: Application
    Filed: April 13, 2022
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventor: Eiichi SUGAWARA
  • Publication number: 20240194478
    Abstract: A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
    Type: Application
    Filed: December 9, 2022
    Publication date: June 13, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Satohiko Hoshino, Scott Lefevre, Yuji Mimura
  • Patent number: 12009240
    Abstract: An apparatus for transporting a substrate includes a transport chamber including a wall having an opening through which carry-in/out of the substrate to/from the substrate processing chamber is performed and a movement surface having a first magnet, a transport module accommodated in the transport chamber to hold the substrate, including a second magnet to which a magnetic force is applied, and configured to be movable along the movement surface in a floating state from the movement surface, an angle adjusting mechanism provided in the transport chamber to switch an angle of the movement surface between a first angle and a second angle which is closer to a vertical state than the first angle, and a transport passage forming a portion of the transport chamber, and including the movement surface at the second angle to which the movement surface switched to the second angle can be connected.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: June 11, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Takehiro Shindo, Toshiaki Kodama
  • Patent number: 12007689
    Abstract: Equipment for coating a wafer is disclosed, where the equipment includes a wafer holder configured to spin the wafer while holding the wafer; a rotary drive configured to spin the wafer holder; a nozzle configured to pour liquid onto a surface to be coated of the wafer; an annular duct disposed circumferentially around the wafer when the wafer is spun by the wafer holder, the duct configured to collect material ejected off an edge of the wafer; and an air knife disposed proximate a backside, the backside being opposite the side to be coated, where the air knife is configured to blow an air curtain through a slot onto an exposed edge region of the backside at a grazing angle of incidence to flow gas radially outward along the backside toward the annular duct.
    Type: Grant
    Filed: May 3, 2022
    Date of Patent: June 11, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Mirko Vukovic, Steven Gueci
  • Patent number: 12009182
    Abstract: A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: June 11, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Ryo Matsubara
  • Patent number: 12009355
    Abstract: Apparatuses, devices and methods for fabricating one or more vertically integrated single bit capacitor-based memory cells is disclosed. A single bit capacitor-based memory cell can include a vertically oriented transistor and a vertically oriented capacitor that is vertically integrated with the transistor, so as to form a memory cell. Aspects of the disclosure include process steps for forming the transistor and the capacitor, including a first metal part of a capacitor, a second metal part of a capacitor and an electrically insulating layer disposed between the two. The transistor and the capacitor also include an electrical contact between them and a layer that insulates the transistor from the base layer or the underlying substrate.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: June 11, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: H. Jim Fulford, Mark I. Gardner, Partha Mukhopadhyay
  • Patent number: 12009189
    Abstract: A method for controlling cleaning of an inner surface of a chamber of a plasma processing apparatus is provided. The method comprises; processing a substrate using plasma generated in the chamber, the substrate being disposed on a substrate support in the chamber and in a region surrounded by an edge ring placed on the substrate support and to which a DC voltage is applied during the plasma generation; measuring a self-bias potential of the edge ring during the plasma generation in said processing the substrate; and controlling the cleaning of the inner surface of the chamber in response to the self-bias potential.
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: June 11, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takashi Tsuto
  • Patent number: 12007692
    Abstract: A nozzle that mixes fluid containing steam or mist of pressurized pure water and processing liquid containing at least sulfuric acid and ejects mixed fluid of the fluid and the processing liquid, the nozzle comprising: at least one first ejection port ejecting the fluid; at least one second ejection port ejecting the processing liquid; and at least one lead-out path being in fluid communication with the at least one first ejection port and the at least one second ejection port and leading out the mixed fluid of the fluid ejected from the at least one first ejection port and the processing liquid ejected from the at least one second ejection port, wherein the at least one first ejection port or the at least one second ejection port is arranged to be directed to position deviated from central axis of the at least one lead-out path in a plan view.
    Type: Grant
    Filed: December 8, 2022
    Date of Patent: June 11, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroki Sakurai, Nobuhiro Ogata, Daisuke Goto, Kanta Mori, Kenji Yada, Yusuke Hashimoto, Shoki Mizuguchi, Yenrui Hsu
  • Patent number: 12009211
    Abstract: Methods are provided herein for forming spacers on a patterned substrate. A self-aligned multiple patterning (SAMP) process is utilized for patterning structures, spacers formed adjacent mandrels, on a substrate. In one embodiment, a novel approach of etching titanium oxide (TiO2) spacers is provided. Highly anisotropic etching of the spacer along with a selective top deposition is provided. In one embodiment, an inductively coupled plasma (ICP) etch tool is utilized. The etching process may be achieved as a one-step etching process. More particularly, a protective layer may be selectively formed on the top of the spacer to protect the mandrel as well as minimize the difference of the etching rates of the spacer top and the spacer bottom. In one embodiment, the techniques may be utilized to etch TiO2 spacers formed along amorphous silicon mandrels using an ICP etch tool utilizing a one-step etch process.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: June 11, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Ya-Ming Chen, Katie Lutker-Lee, Eric Chih-Fang Liu, Angelique Raley, Stephanie Oyola-Reynoso, Shihsheng Chang
  • Patent number: 12009430
    Abstract: Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: June 11, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Sergey Voronin, Christopher Catano, Sang Cheol Han, Shyam Sridhar, Yusuke Yoshida, Christopher Talone, Alok Ranjan
  • Patent number: 12009217
    Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: June 11, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Takahashi, Yu Nunoshige
  • Patent number: 12009219
    Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to ?40° C. or lower, after the first stage.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: June 11, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yusuke Takino, Takayuki Hoshi
  • Publication number: 20240186158
    Abstract: The present disclosure provides a transfer module, comprising: a first transfer chamber; a second transfer chamber, the second transfer chamber capable of accommodating a container accommodating a plurality of objects; and an opening/closing door configured to partition the first transfer chamber and the second transfer chamber, wherein the first transfer chamber has an accommodation portion configured to accommodate the object to be carried into the second transfer chamber, and the container accommodating the plurality of objects is carried into the second transfer chamber, the plurality of objects are transferred from the container to the accommodation portion in the first transfer chamber, the object is transferred from the accommodation portion into the vacuum transfer module, and the object carried out from the vacuum transfer module is transferred into the container without passing through the accommodation portion.
    Type: Application
    Filed: December 1, 2023
    Publication date: June 6, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Norihiko AMIKURA, Makoto SAEGUSA, Toshiaki TOYOMAKI, Seiichi KAISE, Masatomo KITA