Abstract: The plasma processing system includes a plasma processing device, an assistance device, and a control device, in which the assistance device includes a first determination unit for determining, using a first machine learning model, a plurality of control parameters for processing a pre-processing substrate so that a predicted shape of the post-processing substrate conforms a required shape of the post-processing substrate based on a first input related to a structure of the pre-processing substrate, a second input related to a required shape of the post-processing substrate, a third input related to a specification of the plasma processing device, and a fourth input related to a state of the plasma processing device, and a second determination 10 unit for determining an operating condition of the plasma processing device using a second machine learning model, based on the plurality of determined control parameters, the third input, and the fourth input.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, a ground frame, an electricity storage unit, a rectifying and smoothing unit, a power feeding output connector, and a power receiving coil. The rectifying and smoothing unit includes a power feeding input connector comprising a first power feeding input terminal and a second power feeding input terminal, and a rectifying circuit comprising a diode bridge. The power feeding output connector comprises a first feeding output terminal and a second power feeding output terminal which are electrically connectable to the first power feeding input terminal and the second power feeding input terminal. The power receiving coil is electrically connected to the power feeding output connector, and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.

Abstract: An etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative DC voltage to the substrate support.

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, a plasma generator, at least one electromagnet, and a power source. The substrate support is provided in the chamber. The substrate support includes a first region on which a substrate is placeable and a second region which surrounds the first region and on which an edge ring is placed. The plasma generator is configured to generate a plasma in the chamber. The at least one electromagnet is configured to generate a magnetic field localized in an annular space above the edge ring. The power source is electrically connected to the at least one electromagnet and is configured to adjust a strength of the magnetic field.

Abstract: An adjustment method includes: acquiring reference distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a first chamber and a substrate placed at a first substrate support disposed in the first chamber in a first plasma processing apparatus including the first chamber and the first substrate support; acquiring distribution data that is data on a distribution of an ion flux that occurs between plasma generated in a second chamber and a substrate placed at a second substrate support disposed in the second chamber in a second plasma processing apparatus including the second chamber and the second substrate support; and adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

Abstract: In a plasma processing apparatus disclosed, a controller performs repetition of a cycle. The cycle includes supplying a pulse of a source high-frequency power from a high-frequency power supply for generating plasma from gas in a chamber, and supplying a pulse of an electric bias to a substrate support from a bias power supply. The pulse of the electric bias includes a direct current voltage pulse periodically generated at a bias frequency of 1 MHz or less. A repetition frequency of the cycle is 5 kHz or more. A start timing of the pulse of the electric bias is simultaneous with or earlier than a stop timing of the pulse of the source high-frequency power. A stop timing of the pulse of the electric bias is later than the stop timing of the pulse of the source high-frequency power.

Abstract: A technology for reducing variation in an ion flux distribution will be provided. There is provided a plasma processing method for performing plasma processing in a plasma processing apparatus including a chamber and a substrate support disposed in the chamber, the plasma processing performed on a substrate placed at the substrate support by generating plasma in the chamber. The plasma processing method includes: (a) the step of storing, in memory, first distribution data that is data relating to a distribution of an ion flux that occurs between the plasma generated in the chamber and a first substrate placed at the substrate support; (b-a) the step of placing a second substrate at the substrate support; and (b-b) a plasma processing step of generating the plasma in the chamber based on the first distribution data to perform the plasma processing on the second substrate.

Abstract: An information processing apparatus includes a prediction unit configured to calculate, based on a film thickness model representing a relationship between a state of a substrate processing apparatus and a film thickness of a coating film formed on a front surface of a substrate by the substrate processing apparatus and pre-data representing the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, a predicted film thickness when the substrate is processed by the substrate processing apparatus; and an output unit configured to output, based on the predicted film thickness, instruction information on a processing of the substrate before the substrate is processed by the substrate processing apparatus.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, an electricity storage unit, a power transmitting coil, a power receiving coil and at least one driving system. The power transmitting coil is provided outside the plasma processing chamber. The power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil by electromagnetic induction coupling. The at least one driving system is configured to change a distance between the power transmitting coil and the power receiving coil by moving at least one of the power transmitting coil and the power receiving coil.

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a gas supplier for supplying gas into the chamber, a radio-frequency power supply for supplying a source radio-frequency power to generate plasma, and a bias power supply for generating electric bias. During a first processing period, the radio-frequency power supply uses frequencies, which are included in a first frequency set determined to reduce a degree of reflection of the source radio-frequency power from a load, as source frequencies of the source radio-frequency power for each of phase periods in a waveform period of the electric bias. During a second processing period, the radio-frequency power supply uses frequencies, which are included in a second frequency set different from the first frequency set and determined to reduce the degree of reflection, as the source frequencies for each of the phase periods.

Abstract: An information processing method, an information processing system, and a recording medium are provided.

Abstract: Provided is a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; a high frequency power supply; an electrode or an antenna electrically connected to the high frequency power supply; a power consuming member disposed within the plasma processing chamber or the substrate support; an electricity storage unit electrically connected to the power consuming member; a power transmitting coil provided outside the plasma processing chamber; a power receiving coil electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil; at least one metal case that provides a shielded space and accommodates the power transmitting coil and the power receiving coil within the shielded space; and at least one ferrite material that is disposed within the shielded space and is provided to close a space in which the power transmitting coil and the power receiving coil are disposed.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, an electrode or an antenna, a high frequency power supply, a consuming member, an electricity storage unit and a power receiving coil. The electrode or an antenna is disposed such that a space within the plasma processing chamber is located between the electrode or the antenna and the substrate support. The high frequency power supply is configured to generate high frequency power and is electrically connected to the substrate support, the electrode or the antenna. The power consuming member is disposed within the plasma processing chamber or the substrate support. The electricity storage unit is electrically connected to the power consuming member. The power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: A substrate processing method of grinding a first substrate in a combined substrate in which the first substrate and a second substrate are bonded to each other includes measuring a total thickness distribution of the combined substrate; measuring a thickness distribution of the first substrate; calculating a thickness distribution of the second substrate by subtracting the thickness distribution of the first substrate from the total thickness distribution of the combined substrate; deciding a relative inclination between a substrate holder configured to hold the combined substrate and a grinder configured to grind the combined substrate, based on the thickness distribution of the second substrate; and grinding the first substrate while holding the combined substrate at the inclination which is decided.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

Abstract: Aspects of the present disclosure provide a method for creating a product-like surrogate test wafer that mimic a product wafer. For example, the method can include providing a second wafer, forming a stress control layer on the second wafer, and activating the stress control layer according to a first bow measurement of a first wafer to modify an internal stress of the stress control layer such that the second wafer and the stress control layer form a surrogate wafer that has a second bow measurement substantially equal to the first bow measurement.

Abstract: A method of endpoint detection includes performing a surface treatment on a wafer without plasma in a process chamber which includes an outlet configured to output an exhaust gas of the surface treatment. An exhaust plasma is generated from the exhaust gas in a plasma coupler. The exhaust plasma is analyzed to determine an endpoint of the surface treatment. A system includes a process chamber configured to receive a wafer and perform a surface treatment on the wafer without plasma. The process chamber includes an outlet configured to output an exhaust gas of the surface treatment. A plasma coupler is configured to receive the exhaust gas and generate an exhaust plasma therefrom. A detector is configured to receive and analyze the exhaust plasma.

Abstract: A substrate processing apparatus includes a plasma processing chamber, a base arranged inside the plasma processing chamber, and an electrostatic chuck arranged on the base and having a substrate support surface and a ring support surface. The electrostatic chuck is configured to include a plurality of heat-transfer gas supply holes formed in the substrate support surface, an annular seal band formed on the substrate support surface around an outer periphery of the plurality of heat-transfer gas supply holes so as to surround the plurality of heat-transfer gas supply holes, and at least one first protrusion formed on the substrate support surface between a first heat-transfer gas supply hole closest to the seal band among the plurality of heat-transfer gas supply holes and the seal band.