Light emitting diode device

- CREE, INC.
Skip to: Description  ·  Claims  ·  References Cited  · Patent History  ·  Patent History
Description

FIG. 1 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 2 is a top view of the light emitting diode device shown in FIG. 1.

FIG. 3 is a bottom view of the light emitting diode device shown in FIG. 1.

FIG. 4 is a front elevation view of the light emitting diode device shown in FIG. 1.

FIG. 5 is a right side elevation view of the light emitting diode device shown in FIG. 1.

FIG. 6 is a back elevation view of the light emitting diode device shown in FIG. 1.

FIG. 7 is a left side elevation view of the light emitting diode device shown in FIG. 1.

FIG. 8 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 9 is a top view of the light emitting diode device shown in FIG. 8.

FIG. 10 is a bottom view of the light emitting diode device shown in FIG. 8.

FIG. 11 is a front elevation view of the light emitting diode device shown in FIG. 8.

FIG. 12 is a right side elevation view of the light emitting diode device shown in FIG. 8.

FIG. 13 is a back elevation view of the light emitting diode device shown in FIG. 8.

FIG. 14 is a left side elevation view of the light emitting diode device shown in FIG. 8.

FIG. 15 is a bottom perspective view of a light emitting diode device according an embodiment of to the present invention.

FIG. 16 is a top view of the light emitting diode device shown in FIG. 15.

FIG. 17 is a bottom view of the light emitting diode device shown in FIG. 15.

FIG. 18 is a front elevation view of the light emitting diode device shown in FIG. 15.

FIG. 19 is a right side elevation view of the light emitting diode device shown in FIG. 15.

FIG. 20 is a back elevation view of the light emitting diode device shown in FIG. 15.

FIG. 21 is a left side elevation view of the light emitting diode device shown in FIG. 15.

FIG. 22 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 23 is a top view of the light emitting diode device shown in FIG. 22.

FIG. 24 is a bottom view of the light emitting diode device shown in FIG. 22.

FIG. 25 is a front elevation view of the light emitting diode device shown in FIG. 22.

FIG. 26 is a right side elevation view of the light emitting diode device shown in FIG. 22.

FIG. 27 is a back elevation view of the light emitting diode device shown in FIG. 22.

FIG. 28 is a left side elevation view of the light emitting diode device shown in FIG. 22.

FIG. 29 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 30 is a top view of the light emitting diode device shown in FIG. 29.

FIG. 31 is a bottom view of the light emitting diode device shown in FIG. 29.

FIG. 32 is a front elevation view of the light emitting diode device shown in FIG. 29.

FIG. 33 is a right side elevation view of the light emitting diode device shown in FIG. 29.

FIG. 34 is a back elevation view of the light emitting diode device shown in FIG. 29.

FIG. 35 is a left side elevation view of the light emitting diode device shown in FIG. 29.

FIG. 36 is a bottom perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 37 is a top view of the light emitting diode device shown in FIG. 36.

FIG. 38 is a bottom view of the light emitting diode device shown in FIG. 36.

FIG. 39 is a front elevation view of the light emitting diode device shown in FIG. 36.

FIG. 40 is a right side elevation view of the light emitting diode device shown in FIG. 36.

FIG. 41 is a back elevation view of the light emitting diode device shown in FIG. 36; and,

FIG. 42 is a left side elevation view of the light emitting diode device shown in FIG. 36.

The broken lines of FIGS. 1-42 illustrate portions of the various embodiments of the light emitting diode device which form no part of the claimed design.

Claims

The ornamental design for light emitting diode device, as shown and described herein.

Referenced Cited
U.S. Patent Documents
4214251 July 22, 1980 Schairer
4824767 April 25, 1989 Chambers et al.
5334865 August 2, 1994 Fathimulla et al.
5500381 March 19, 1996 Yoshida et al.
5563079 October 8, 1996 Shin et al.
5712175 January 27, 1998 Yoshida
5990531 November 23, 1999 Taskar et al.
6197609 March 6, 2001 Tsutsui et al.
6375340 April 23, 2002 Biebl
6380564 April 30, 2002 Chen
6395572 May 28, 2002 Tsutsui et al.
6410942 June 25, 2002 Thibeault et al.
6462358 October 8, 2002 Lin et al.
6480389 November 12, 2002 Shie
6486499 November 26, 2002 Krames et al.
6489637 December 3, 2002 Sakamoto
6495862 December 17, 2002 Okazaki et al.
6586813 July 1, 2003 Nagahara
6614172 September 2, 2003 Chiu et al.
6642652 November 4, 2003 Collins et al.
6646292 November 11, 2003 Steigerwald et al.
6657236 December 2, 2003 Thibeault et al.
6741029 May 25, 2004 Matsubara
6784462 August 31, 2004 Schubert
6791259 September 14, 2004 Stokes
6828596 December 7, 2004 Steigerwald et al.
6869812 March 22, 2005 Liu
6885036 April 26, 2005 Tarsa et al.
6888171 May 3, 2005 Liu et al.
6946309 September 20, 2005 Camras et al.
6953255 October 11, 2005 Horiuchi
7049639 May 23, 2006 Wang
7141825 November 28, 2006 Horio et al.
7154125 December 26, 2006 Koide et al.
7348212 March 25, 2008 Schiaffino et al.
7439166 October 21, 2008 Milosavljevic et al.
7608497 October 27, 2009 Milosavljevic et al.
7622742 November 24, 2009 Kim et al.
7622746 November 24, 2009 Lester et al.
7648849 January 19, 2010 Lee et al.
7709282 May 4, 2010 Fukshima et al.
7781791 August 24, 2010 Sakai et al.
D631020 January 18, 2011 Chuang
D646235 October 4, 2011 Kuwaharada
D646643 October 11, 2011 Wu
D658139 April 24, 2012 Andrews
D660257 May 22, 2012 Andrews
8212273 July 3, 2012 McKenzie et al.
D675169 January 29, 2013 Chou
8368100 February 5, 2013 Donofrio
D691973 October 22, 2013 Donofrio
D693781 November 19, 2013 Kobayashi
D694201 November 26, 2013 Iino
D698323 January 28, 2014 Noichi
D709464 July 22, 2014 Abare
D710810 August 12, 2014 Noichi
D713804 September 23, 2014 Britt
8835959 September 16, 2014 Nakamura
D718725 December 2, 2014 Reiherzer
D741821 October 27, 2015 Song
D746240 December 29, 2015 Bergmann
9638852 May 2, 2017 Sakai
D790486 June 27, 2017 Reiherzer
D800679 October 24, 2017 Omori
20020017648 February 14, 2002 Kasahara et al.
20020180351 December 5, 2002 McNulty
20030102484 June 5, 2003 Hata
20030218183 November 27, 2003 Micovic et al.
20030227250 December 11, 2003 Nee
20040016936 January 29, 2004 Tanaka et al.
20040135166 July 15, 2004 Yamada
20040183081 September 23, 2004 Shishov
20040217364 November 4, 2004 Tarsa et al.
20040227149 November 18, 2004 Ibbetson
20050082562 April 21, 2005 Ou et al.
20050147923 July 7, 2005 Sawada
20050159009 July 21, 2005 Makiyama et al.
20050211989 September 29, 2005 Horio et al.
20050224821 October 13, 2005 Sakano
20050242364 November 3, 2005 Moustakas
20050258431 November 24, 2005 Smith et al.
20050258450 November 24, 2005 Saxler
20050258451 November 24, 2005 Saxler et al.
20060006414 January 12, 2006 Germain et al.
20060054907 March 16, 2006 Lai
20060063289 March 23, 2006 Negley
20060081869 April 20, 2006 Lu et al.
20060091405 May 4, 2006 Kwak
20060108606 May 25, 2006 Saxler et al.
20060244005 November 2, 2006 Chen
20060273332 December 7, 2006 Kang
20060273333 December 7, 2006 Wu et al.
20060273335 December 7, 2006 Asahara
20070018182 January 25, 2007 Beeson et al.
20070018184 January 25, 2007 Beeson et al.
20070063215 March 22, 2007 Shinichi et al.
20070102715 May 10, 2007 Ko et al.
20070111473 May 17, 2007 Furukawa et al.
20070145380 June 28, 2007 Shum et al.
20070145392 June 28, 2007 Haberern
20070200493 August 30, 2007 Hsu
20070202624 August 30, 2007 Yoon et al.
20070262338 November 15, 2007 Higashi et al.
20080064133 March 13, 2008 Lee et al.
20080157115 July 3, 2008 Chuang et al.
20080182369 July 31, 2008 Jeong et al.
20080203541 August 28, 2008 Makiyama
20080217635 September 11, 2008 Emerson et al.
20080241757 October 2, 2008 Xu et al.
20080251858 October 16, 2008 Ahn et al.
20080258161 October 23, 2008 Edmond
20080274431 November 6, 2008 Nozaki et al.
20080290364 November 27, 2008 Kamiya et al.
20080308322 December 18, 2008 Hsieh et al.
20090039359 February 12, 2009 Yoon
20090050907 February 26, 2009 Yuan
20090108281 April 30, 2009 Keller
20090140272 June 4, 2009 Beeson et al.
20090283787 November 19, 2009 Donofrio et al.
20110163347 July 7, 2011 Hasnain
20130105835 May 2, 2013 Wu
20130328074 December 12, 2013 Lowes
Foreign Patent Documents
1816917 September 2006 CN
102007019776 October 2008 DE
102007046743 April 2009 DE
57042179 March 1982 JP
4284620 October 1992 JP
0811544 April 1996 JP
08111544 April 1996 JP
9129532 May 1997 JP
09153646 June 1997 JP
09008403 October 1997 JP
10189649 July 1998 JP
11150298 June 1999 JP
H11220218 August 1999 JP
2000311704 July 2000 JP
2001308380 November 2001 JP
02299699 October 2002 JP
2002353499 December 2002 JP
2003017757 January 2003 JP
03124522 April 2003 JP
2003347589 December 2003 JP
200447988 February 2004 JP
2004047988 February 2004 JP
3105430 October 2004 JP
2004047988 December 2004 JP
200517289 July 2005 JP
2005244152 September 2005 JP
2005123489 December 2005 JP
2006128727 May 2006 JP
2006216933 August 2006 JP
2006313888 November 2006 JP
2007073965 March 2007 JP
2007511065 April 2007 JP
2007527123 September 2007 JP
200731704 November 2007 JP
WO2008/038842 April 2008 JP
2008112957 May 2008 JP
2008112957 May 2008 JP
2008192782 August 2008 JP
2008205005 September 2008 JP
2008288548 November 2008 JP
2008288548 November 2008 JP
2009049342 March 2009 JP
200988299 April 2009 JP
564584 December 2003 TW
200627674 August 2006 TW
200627675 August 2006 TW
WO 8300408 February 1983 WO
WO 2006006555 January 2006 WO
WO 07136391 November 2007 WO
WO 07136392 November 2007 WO
WO 07141763 December 2007 WO
WO 2007141763 December 2007 WO
WO 09039805 April 2009 WO
Other references
  • Examination Pretrial Report for Japanese Application No. 2015-130167; dated Jul. 28, 2017.
  • Office Action from U.S. Appl. No. 11/738,171, dated Sep. 14, 2015.
  • Office Action from U.S. Appl. No. 14/159,209, dated Nov. 17, 2015.
  • Certificate of Patent for Invention from Chinese Patent Appl. No. ZL200880020777.7, dated Aug. 5, 2015.
  • Foreign OA European Application No. 08745097.9 1551; Dated Mar. 14, 2017.
  • Steigerwald, Daniel A., et al; A GaInN Flip Chip Light Emitting Device Having High Reflectance OHMIC Contact; Nov. 22, 2002; Japanese Application No. 2002-33014.
  • Office Action for Application No. 2015-130167; Dated Mar. 9, 2016.
  • Trial Decision from Japanese Patent Appl. No. 2012-510802, dated Jul. 21, 2015.
  • Notification of the Fifth Office Action from Chinese Patent Appl. No 200880020777.7. dated Jan. 21, 2015.
  • Allowance Decision from Taiwanew Patent Appl. No. 097114378, dated Sep. 5, 2014.
  • Pretrial Report from Japanese Patent Appl. No. 2012-510802, dated Jul. 2, 2014..
  • Office Action from U.S. Appl. No. 11/904,054, dated May 2, 2014.
  • Office Action from Taiwanese Patent Appl. No. 097114378. dated May 12, 2014.
  • Second Office Action from Chinese Patent Appl. No 201080026730.9 dated Apr. 9, 2014.
  • Decision of Dismissal of Amendment from Japanese Patent Appl. No. 2012-510802. dated Feb. 18, 2014.
  • First Office Action from Chinese Patent Appl. No. 201080026730.9, dated Oct. 23, 2013.
  • Notice of Reasons for Rejection from Japanese Patent Application 2010-54010, dated Jun. 26, 2012.
  • Rejection Decision from Chinese Patent Appl. No. 200680020777.7, dated Jul. 3, 2013.
  • Interrogatory from Japanese Patent Appl. No 2010-504160, dated Jul. 16, 2013.
  • Preliminary Examination Report from Japanese Patent Appl. No. 2010-504160, dated Jun. 25, 2013.
  • Notice of Reasons for Rejection from Japanese Patent Application No. 2012-510802, dated May 21, 2013.
  • Interrogation from Japanese Patent Application No. 2009-132243, dated Apr. 23, 2013.
  • Fourth Office Action from Chinese Patent Appl. No. 200380020777.7, dated Feb 17, 2013.
  • Decision of Rejection from Japanese Patent Application No. 2009-132243, dated Oct. 2, 2012.
  • Office Action from U.S. Appl. No. 11/904,064, dated Jul. 26, 2012.
  • Response to OA from U.S. Appl. No. 11/904,064. filed Jan. 28, 2013.
  • Office Action from U.S. Appl. No. 12/432,478, dated Jun. 20, 2012.
  • Response to OA from U.S. Appl. No. 12/432,478, dated Aug. 17, 2012.
  • Office Action from U.S. Appl. No. 12/185,031, dated Jun. 12, 2012.
  • Response to OA from U.S. Appl. No. 12/185,031, filed Aug. 24, 2012.
  • Office Action from U.S. Appl. No. 11/904,064, dated Feb. 25, 2013.
  • Response to OA from U.S. Appl. No. 11/904,064, filed May 24, 2013.
  • Office Action from U.S. Appl. No. 11/904,064, dated Jun. 12, 2013.
  • Response to OA from U.S. Appl. No. 11/904,064, filed Aug. 20, 2013.
  • Office Action from U.S. Appl. No. 13/023,788, dated Mar. 12, 2013.
  • Response to OA from U.S. Appl. No. 13/023,788, filed Jun. 11, 2013.
  • Office Action from U.S. Appl. No. 11/738,171, dated Jun. 27, 2013.
  • Office Action from U.S. Appl. No. 12/432,478, dated Jul. 1, 2013.
  • Office Action from U.S. Appl. No. 13/023,788, dated Jul. 2, 2013.
  • Extended European Search Report for European Patent Application No. 10185708.4, dated Dec. 2, 2010.
  • International Search and Written Opinion for PCT application No. PCT/US2010/024980, dated Oct. 6, 2010.
  • U.S. Appl. No. 12/463,709, filed May 11, 2009, entitled Semiconductor Light Emitting Diodes Having Reflective Structures and Methods of Fabricating Same.
  • U.S. Appl. No. 11/985,410, filed Nov. 14, 2007, Wire Bond Free Wafer Level LED.
  • U.S. Appl. No. 12/329,713, filed Dec. 8, 2008, Light Emitting Diode With Improved Light Extraction.
  • Huang et al. “High-Performance GaN-Based Vertical-Injection Light-Emitting diodes with TiO2-SiO2 Omnidirectional Reflector and n-GaN Roughness” IEEE Photonics Technology Letters. 19(8) 565-567 (2007).
  • Official Notice of Rejection for Japanese Patent Application No. 2006-513442, dated Jun. 8, 2010.
  • Office Action for Korean Patent Application No. 10-2005-7020463, dated Dec. 21, 2010.
  • Grundbacher et al., “Utilization of an Electron Beam Resist Process to Examine the Effects of Asymmetric Gate Recess on the Device Characteristics of AlGaAs/InGaAs PHEMT's,” IEEE, vol. 44. No. 12, Dec. 1997.
  • Office Action from U.S. Appl. No. 12/012,376, dated Jul. 8, 2010.
  • Office Action from U.S. Appl. No. 12/012,376, dated Dec. 3, 2010.
  • Office Action from U.S. Appl. No. 12/432,478, dated Nov. 17, 2010.
  • Office Action from U.S. Appl. No. 11/904,064, dated Apr. 22, 2011.
  • Office Action from U.S. Appl. No. 12/432,478, dated May 16, 2011.
  • Office Action from U.S. Appl. No. 12/165,031, dated Jun. 14, 2011.
  • Notice of Reasons for Rejection from Japanose Patent Appl. No. 2009-132243, dated Oct. 1, 2013.
  • Office Action from Japanese Patent Appl. No. 2012-510802, dated Oct. 8, 2013.
  • Office Action from U.S. Appl. No. 11/904,064, dated Sep. 12, 2013.
  • Response to OA from U.S. Appl. No. 11/904,064, filed Nov. 11, 2013.
  • Office Action from U.S. Appl. No. 11/904,064, dated Jan. 7, 2014.
  • Foreign Office Action for European Appl. No. 8745097.9; dated Jul. 25, 2016.
  • W.H. Southwell: (Gradient-index antireflection coatings, Optical Letters, vol. 8, No. 11, Nov. 1, 1983 (Nov. 1, 1983), p. 584.
  • Second Examination from European Patent Appl. No. 09 159 460.6-1552, dated Feb. 10, 2016.
  • Notice of Reasons for Rejection for Japanese Application No. 2017-098246; Dated Mar. 13, 2018.
  • Summons to Attend Oral Proceedings for European Application No. 09159460.6; Dated May 16, 2018.
Patent History
Patent number: D826871
Type: Grant
Filed: Dec 11, 2014
Date of Patent: Aug 28, 2018
Assignee: CREE, INC. (Durham, NC)
Inventors: Jesse Reiherzer (Wake Forest, NC), Jeremy Nevins (Cary, NC), Joseph Clark (Raleigh, NC)
Primary Examiner: Selina Sikder
Application Number: 29/511,587
Classifications