Transistor

- EPISTAR CORPORATION
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Description

FIG. 1 is a perspective view of a transistor showing my new design;

FIG. 2 is another perspective view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a left side view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a top plan view thereof; and,

FIG. 8 is a bottom plan view thereof.

The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

Claims

The ornamental design for a transistor, as shown and described.

Referenced Cited
U.S. Patent Documents
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2696575 December 1954 Fogg
2829257 April 1958 Elihu
2929753 March 1960 Noyce
2988652 June 1961 Rutz
3002100 September 1961 Rutz
3387286 June 1968 Dennard
4339765 July 13, 1982 Nakamura
4370670 January 25, 1983 Nawata
4408387 October 11, 1983 Kiriseko
4590666 May 27, 1986 Goto
4639757 January 27, 1987 Shimizu
4782378 November 1, 1988 Sekiya
4827322 May 2, 1989 Takata
4835588 May 30, 1989 Nawata
4860082 August 22, 1989 Moriyama
6043507 March 28, 2000 Dennison
D443253 June 5, 2001 Nagase
D524763 July 11, 2006 Nakano
9601604 March 21, 2017 Britton
9748379 August 29, 2017 Hwu
20020189083 December 19, 2002 Matsumoto
Patent History
Patent number: D848384
Type: Grant
Filed: Aug 17, 2017
Date of Patent: May 14, 2019
Assignee: EPISTAR CORPORATION (Hsinchu)
Inventor: Tien-Ching Feng (Hsinchu)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/614,297