Schottky barrier diode having chargeable floating gate
- IBM
A Schottky barrier diode having an encircling floating polycrystalline silicon gate which becomes charged upon avalanche breakdown of the diode. The gate is self-aligned with respect to the Schottky barrier diode metal so that the gate uniformly overhangs the depletion area in the semiconductor when the diode is reverse biased. The gate is insulated from the semiconductor material and from the metal by dielectric layers including silicon dioxide and silicon nitride.
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Description
Patent History
Patent number: T953005
Type: Grant
Filed: Jan 7, 1976
Date of Patent: Dec 7, 1976
Assignee: International Business Machines Corporation (Armonk, NY)
Inventors: Narasipur G. Anantha (Hopewell Junction, NY), Robert C. Dockerty (Highland, NY)
Application Number: 5/647,284
Type: Grant
Filed: Jan 7, 1976
Date of Patent: Dec 7, 1976
Assignee: International Business Machines Corporation (Armonk, NY)
Inventors: Narasipur G. Anantha (Hopewell Junction, NY), Robert C. Dockerty (Highland, NY)
Application Number: 5/647,284
Classifications
Current U.S. Class:
357/15;
357/13;
357/23;
357/52;
357/53;
357/59;
307/238
International Classification: H01L 2948;
International Classification: H01L 2948;
