Abstract: The invention relates to a method for plain dyeing a textile web of fabric by means of a padding mangle. The squeezing force distribution between the rollers of the padding mangles is controlled according to the dye distribution in the web of fabric which is still provided with the initial humidity on the output of the padding mangle, whereby said dye distribution is measured on certain points by means of a dye measuring appliance. Measuring the dye of the humid web of fabric is simplified and the measured result is improved when a dye receiver is used as the dye measuring device, whereby said receiver separately detects the radiation of a white light source according to pure dyes, said radiation being reflected on the web of fabric in a diffuse manner.

Abstract: A method for detecting a non-fixed object in a system (12) is provided. The method includes applying a light emitting substance (13) to at least a portion (14) of an object (10). At least a section (20) of the portion (14) is illuminated with a non-fixed object illuminator (16). The object (10) is detected in the system (12) in response to illuminating the section (20). The object (10) is then determined to be a fixed or non-fixed object.

Abstract: In order to ensure that a starting point of the position detection means is not subjected to the influence of noise, etc in electronic equipment equipped with position detection means for detecting the position of a moving body using an incremental type encoder, in electronic equipment for controlling the deciding of a position of a moving body using an ultrasonic motor comprised of piezoelectric material, an oscillating body, a moving body, pressing means, a pair of electrodes for applying a high-frequency voltage to the piezoelectric material, an oscillator drive circuit for generating the high-frequency voltage, and a control unit, a location detected by the incremental type encoder as a position detection starting point is set to be a position most frequently passed through by the moving body or a position decided upon the most frequently as a starting point, with the incremental type counter being reset to zero by a starting point signal of a starting point signal producing circuit.

Abstract: Method and apparatus for measuring the liquid fill level in bottles while the bottles are still within the turret section of the filler system. A source of focused light, such as that generated by a laser, is directed onto a series of targets positioned on the turret behind the bottles. The beam is directed back through the bottle neck and detected by a remote camera.

Abstract: A fueldraulic metering valve uses pressurized liquid fuel to control flow of gaseous fuel to a jet engine combustion chamber. The valve has a disconnectable body defining a piston chamber and a cavity for an interchangeable venturi nozzle module, both disposed about a stroke axis. A servo valve controls flow of the liquid fuel through the piston chamber and supply and return ports. The liquid fuel drives a piston and pintle assembly to open and close off the throat of the venturi passageway, and thereby control metering of the gaseous fuel, which flow through separate intake and exhaust ports. The gas and liquid fuel are separated by a high temperature seal. The liquid fuel is routed through the piston and a special baffle to dissipate heat transferred to the seal and piston from the hot gaseous fuel. A LVDT position transducer provides feedback to the controller for correcting position error.

Abstract: A method and apparatus for correcting a cock driving device in a beverage dispense. A manipulating lever for a dispensing cock is correctly opened and closed at all times by the cock driving device. The manipulating lever for the dispensing cock is provided with an interlock member which moves back and forth integrally with the lever, and the interlock member is provided with a magnet. A pair of hole elements capable of sensing the magnet are arranged one behind the other, spaced from each other, on a mounting plate arranged on a slider. The magnet is set to face an intermediate position of both hole elements of the slider staying at a standby position, with the dispensing cock staying at a neutral position. A control board moves the slider for correction to a position at which the magnet reaches the intermediate position of the hole elements if the magnet does not face the intermediate position of the pair of hole elements.

Abstract: A solenoid valve for controlling an injection valve of an internal combustion engine has an electromagnet (29), a displaceable armature having an armature plate (28) and an armature pin (27), as well as a control valve element (25) which is displaced with the armature and which cooperates with a valve seat (24) for opening and closing a fuel discharge channel (17) of a control pressure chamber (14) of the fuel injector (1). The armature plate (28) is mounted on the armature pin (27) so as to be slidingly displaceable against the tensioning force of a restoring spring (35) acting on the armature plate (28) under the influence of the inert mass of the armature plate in the closing direction of the control valve element (25), and is pressed by the restoring spring (35) in its rest state against a stop element (26) attached to the armature pin (27). The stop element (26) engages in a recess (60) on the end face (47) of the armature plate (28) facing the electromagnet (29).

Abstract: A rotary two-way servovalve provides a continuously variable orifice size in response to an input rotation while minimizing actuation torque and providing an orifice area, and thus flow, proportional to the input rotational angle. The valve is comprised of a cylindrical spool which is fitted to and rotates within a bore in a body. An axial hole in the spool terminates at one end and is closed at the other end by a plug. An inlet groove at one location along the outside of the spool communicates through radial holes with the axial hole, and this inlet groove is fed fluid under pressure from an inlet hole in the body. A cross hole, which also intersects the axial hole, feeds high pressure fluid to an opposed pair of outlet slots, one of which is positioned to intersect with an outlet port in the body to varying degrees, depending on the angular position of the spool. The second, identical, outlet slot faces the opposite side of the bore so as to balance the side loads on the spool from varying pressures.

Abstract: To provide a maintenance-easy two-port valve capable of easily assembling and disassembling a valve body and a bonnet, and preventing the bonnet from being detached from the valve body by an erroneous operation. In a two-port valve 1 having attachment means for detachably attaching a bonnet 21 to a valve body 2, the attachment means includes a plurality of shafts 16 fixedly attached to a valve body 2 and each having an engagement groove 17 on an upper end portion, a handle 31, a plate 41 rotatably provided between an upper end portion of the bonnet 21 and the handle 31 and having an engagement groove 43 engaged to or disengaged from the retaining groove 17 by rotating the plate 41, and an engagement pin 35 engaged with an engagement hole 44 provided in the plate 41 at a push-down position of the handle 31, transmitting the rotation of the handle 31 to the plate 41 and fixedly attached to the handle 31.

Abstract: An improved butterfly damper for air delivery systems, having multiple rotatable blades, and a centrally located blade rotating, or actuation means. Each blade comprises an offset, or displaced portion to allow concealment of the actuation mechanism upon closure. This offset portion allows the blades, upon closure, to meet and form a seal around the least complex portion of the actuation mechanism.

Abstract: A valve apparatus is disclosed that includes a valve housing, a valve disc, a valve stem, and a handle for operating the valve apparatus between an open and closed position. The apparatus may be integrated with a transformer and a radiator, such that when the handle is rotated to an open position, the disc opens the valve apparatus and does not extend beyond an end surface of the housing of the valve apparatus.

Abstract: A control valve driving mechanism for an internal combustion engine has a construction in which an electric motor is mounted inside a control valve. With this construction, the electric motor is prevented from projecting outward of an intake pipe, and the electric motor for driving the control valve serves also as a bearing for the control valve, and the electric motor for driving the control valve can be mounted in a compact manner, and the number of component parts can be reduced. This control valve driving mechanism thus enables the improvement of space factor and the use of a commercially-available, inexpensive electric motor to reduce the cost.

Abstract: To provide a poppet valve seal mechanism in which a seal member does not fall out from a groove, and the metal touch is not generated. A groove 15 to which a seal member 17 is mounted is formed such that a width of an opening 15a of the groove 15 is smaller than an maximum width of inside of the groove 15 and a cross section area of the groove 15 is smaller than that of the seal member 17. A maximum width of a portion of the seal member 17 accommodated in the groove 15 is greater than a width of the opening of the groove. A width of the opening 15a is constant over its entire peripheral. An inner wall forming the inside of the groove 15 is formed with communication holes 33 and 34 which bring the inside of the groove 15 and the outside of the groove 15 into communication with each other.

Abstract: This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900° C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.

Abstract: There is provided a sintered body at least 80% of which is constituted of a Y-type hexagonal ferrite. The sintered body contains, as main components, a cobalt oxide, a copper oxide, an iron oxide and AO (AO is at least one of BaO or SrO) in predetermined amounts in mol %, more preferably contains MO (MO is at least one of NiO, ZnO or MgO) in a predetermined amount in mol % in addition to the above components, and also contains, as additional components, bismuth oxide (Bi2O3), borosilicate glass, borosilicate zinc glass or bismuth glass in predetermined amounts in wt %. Thus, a sintered body which exhibits good magnetic properties and is usable up to a high frequency band ranging from several hundred megahertz to gigahertz, contains as few hetero phases other than a Y-type hexagonal ferrite as possible and can be calcined at a temperature of not higher than 1,000° C., particularly about 900° C., and a high-frequency circuit component using the sintered body can be provided.

Abstract: In the method for manufacturing ferrite type permanent magnets according to the formula M1-xRxF12-yTyO19:

Abstract: This invention relates to compositions that include at least one fluoroether and at least one hydrofluorocarbon. Included in this invention are compositions of a cyclic or acyclic hydrofluoroether of the formula CaFbH2a+2−bOc wherein a=2 or 3 and 3≦b≦8 and c=1 or 2 and a hydrofluorocarbon of the formula CnFmH2n+2−m wherein 1≦n≦4 and 1≦m≦8. Such compositions may be used as refrigerants, cleaning agents, expansion agents for polyolefins and polyurethanes, aerosol propellants, heat transfer media, gaseous dielectrics, fire extinguishing agents, power cycle working fluids, polymerization media, particulate removal fluids, carrier fluids, buffing abrasive agents, and displacement drying agents.

Abstract: The present invention relates to a antifreeze/coolant composition for use in internal combustion engines which comprises: an anti freeze/coolant for diesel engines which comprises: 1,3 propanediol 97-98% by volume, 95 to 97 percent; nitrite, 0.50 to 1.5%; nitrate, 0.30 to 1.5%; borate, 0.25 to 1.25%; mercaptobenzothiazole, 0.25 to 1.0%; tolyltriazole, 0.30 to 1.1%; benzyltriazole, 0.00 to 1.0%; silicate, 0.25 to 3.0%; antifoam, 0.05 to 0.3%; silicate stabilizer, 0.10 to 1.9%; and dye, 0.00 to 0.02% In another embodiment, the present invention relates to a different antifreeze/coolant composition for use in internal combustion engines which comprises: an anti freeze/coolant for diesel engines which comprises: 1,3 propanediol 97-98% by volume, 95 to 97 percent; nitrite, 0.50 to 1.50%; nitrate, 0.30 to 1.50%; phosphate, 0.50 to 1.60%; mercaptobenzothiazole, 0.25 to 1.00%; tolyltriazole, 0.30 to 1.10%; benzyltriazole, 0.00 to 1.00%; silicate, 0.25 to 3.00%; molybdate, 0.50 to 1.30%; antifoam, 0.05 to 0.

Abstract: A method of inhibiting the formation and deposition of scale forming moieties in aqueous systems by adding water-soluble or water-dispersible polymers is disclosed.

Abstract: The present invention relates to a composition capable of hydrogen sorption in a closed container at low pressure, comprising an unsaturated organic substance and a hydrogenation catalyst.

Abstract: The invention relates to a thermochromic liquid crystalline medium comprising a liquid crystalline host component and an active component, to a thermochromic ink comprising such a thermochromic liquid crystalline medium encapsulated in a light transmissive polymeric material, to the use of a thermochromic medium or ink in decorative applications like pigments, inks and paints, cosmetics, thermodiagnostic applications like medical thermography, thermometry, optical and electrooptical applications, and security applications and devices, to a security marking or device comprising a thermochromic liquid crystalline medium or thermochromic ink and to a document of value comprising such a security marking.

Abstract: The instant invention relates to liquid crystal media comprising a component A, comprising one or more compounds of formula I 1

Abstract: A liquefied color phosphorescent material consisting of a mixture which comprises a stock solution; a colorant; a color-emitting phosphorescent fine pigment particle having an average particle diameter of 7 &mgr;m or less; and an additive for stably dispersing pigments containing a cellulose-based synthetic resin, silica-based powder, cyclohexanone, isophorone and mineral spirit. The pigment particles of colorant and the color-emitting phosphorescent fine pigment particle are enabled to be always maintained in a substantially uniform dispersion state in the stock solution, thereby making it possible to attain a desired emitting color and to coat the phosphorescent material without necessitating the under-coating using a color paint.

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry has a component of abrasives, such as alumina, silica, ceria, etc, an aqueous ozone with determined concentration, and an additive. A pH value of the slurry composition is between 1 and 10.

Abstract: A nano-tube of multi-element system oxide having novel characteristics and expected to gain application to a variety of devices includes a multi-element system oxide containing at least one of Bi, Y, La and Sc as a component thereof and having a tube diameter of less than 1×10−6 m.

Abstract: The invention concerns ionic compounds in which the anionic load has been delocalized. A compound disclosed by the invention is comprised of an amide or one of its salts, including an anionic portion combined with at least one cationic portion M+m in sufficient numbers to ensure overall electronic neutrality; the compound is further comprised of M as a hydroxonium, a nitrosonium NO+, an ammonium —NH4+, a metallic cation with the valence m, an organic cation with the valence m, or an organometallic cation with the valence m. The anionic portion matches the formula RF—SOx—N−Z, wherein RF is a perfluorinated group, x is 1 or 2, and Z is an electroattractive substituent. The compounds can be used notably for ionic conducting materials, electronic conducting materials, colorants, and the catalysis of various chemical reactions.

Abstract: Disclosed is a two-photon absorption composition containing a two-photon absorbing compound having a two-photon absorption cross-section of 102 GM (1 GM=1×10−50 cm4 s molecule−1 photon−1) or more. The high sensitive two-photon absorption composition which can bring about two-photon absorption using a laser having a relatively low power is provided.

Abstract: A nail removing hand tool has been developed. This tool comprises a nail removal means containing continuously curved head portion attached to a handle. The handle is attached to the head portion in such a manner that the continuous curved nature of the upper surface of the head is unimpaired. In one embodiment of the tool, a striker head is incorporated in the structure to provide a device which can perform both nail insertion and nail removal functions.

Abstract: A hand tool having novel features including an outwardly extending protrusion which provides a multitude of various angular substantially V-shaped extracting claws and a downwardly extending protrusion having fastener extracting means thereon, with the fastener extracting means being substantially formed from a cutout in the shape of a partial star interconnected with a teardrop.

Abstract: A new evolution in under fence decor, weed and erosion control. Gatorcap is a gator green colored poly vinyl constructed capping system, that can be placed under all types of outdoor fencing. The advantages of gatorcap besides it's clean uniform look are also to prevent grass and weeds from growing up into the fence. With it's unique flexible overlap on each side of the fence, gatorcap allows you to use your lawn mower or lawn tractor for trimming along fencing by cutting over it's guiding edge. You get a clean uniform trim without the use of lawn trimmers or weed killers that can cause soil damage and rain erosion.

Abstract: A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.

Abstract: A light-emitting semiconductor device includes an active layer interposed between first-side and second-side cladding layer, and at least one of first-side and second-side optical guide layers.

Abstract: The quantum circuit device comprises: an asymmetrical coupled quantum dot of a main quantum dot 3a and an operational quantum dot 3b of a smaller size than the main quantum dot 3c; an asymmetrical coupled quantum dot of a main quantum dot 3c arranged at a distance which does not permit to substantially tunnel from the main quantum dot 3a, and an operation quantum dot 3d having a smaller size than the main quantum dot 3c and arranged at a distance which permits tunneling from the operational quantum dot 3b; and a laser device for applying to the asymmetrical coupled quantum dots a laser beam of a wavelength which resonates an inter-level energy the asymmetrical coupled quantum dots. In the sleep state, electron is present at the ground state of the main quantum dot, where no exchange interaction takes place, and in an operation, the electron is transited to an excited state of the operational quantum dot, whereby the operation is made by the exchange interactions between the adjacent operational quantum dots.

Abstract: The present invention relates to a fabrication method of blue light emitting ZnO thin film phosphor. More particularly, the invention relates to a fabrication method of blue light emitting ZnO thin film phosphor simply by heat treatment without making Al-added alloy.

Abstract: Integrated circuit device probing, testing and burn-in are performed in parallel before device packaging. A multiple die carrier has insets for holding dies with respect to a probe tip substrate, which has an array of contacts arranged to contact test pads on the dies to be tested within the die carrier. A top cover includes a set of pogo pins or similar pressure devices corresponding in number and position to the dies within the die carrier. When the top cover is positioned over the die carrier, the pressure devices on the top cover individually apply pressure to the corresponding dies within the die carrier, thereby holding each die against the corresponding contacts of the probe tip substrate. The fixture has locking mechanisms to hold the top cover, die carrier and probe tip substrate together so as to be stable during testing and burn-in.

Abstract: A memory device includes memory cells having two tunnel junctions in series. In order to program a selected memory cell, a first tunnel junction in the selected memory cell is blown. Blowing the first tunnel junction creates a short across the first tunnel junction, and changes the resistance of the selected memory cell from a first state to a second state. The change in resistance is detectable by a read process. The second tunnel junction has different anti-fuse characteristic than the first tunnel junction, and is not shorted by the write process. The second tunnel junction can therefore provide an isolation function to the memory cell after the first tunnel junction is blown.

Abstract: A polysilicon FET is built atop a SiC diode to form a MOSgated device. The polysilicon FET includes an invertible layer of polysilicon atop the surface of a SiC diode which has spaced diode diffusions. A MOSgate is formed on the polysilicon layer and the energization of the gate causes an inversion channel in the invertible layer to form a majority carrier conduction path from a top source electrode to a bottom drain electrode. Forward voltage is blocked in part by the polysilicon FET and in larger part by the depletion of the silicon carbide area between the spaced diode diffusions.

Abstract: A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.

Abstract: A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Abstract: A semiconductor device is provided in which each pixel includes an electric circuit (a bootstrap circuit) for generating an electric potential that is higher than a voltage given through capacitative coupling. Also, there is provided a semiconductor device in which a sufficient signal amplitude can be attained by using the electric circuit to set a potential difference between both terminals of a photoelectric conversion element to the same value as the power source potential. Further, there is provided a semiconductor device in which the number of manufacturing steps is reduced by using transistors having a single polarity to constitute each pixel, thereby achieving increased yield and reduced costs.

Abstract: A semiconductor device comprising an SOI substrate fabricated by forming a silicon layer 3 on an insulating layer 2, a plurality of active regions 3 horizontally arranged in the silicon layer 3, and element isolating parts 5 having a trench-like shape which is made of an insulator 5 embedded between the active regions 3 in the silicon layer 3, wherein the insulating layer 2 has spaces 6 positioned in the vicinity of interfaces between the active regions and the element isolating parts 5, whereby it becomes possible to reduce fixed charges or holes existing on a side of the insulating layer in interfaces between the silicon layer and the insulating layer, which fixed charges or holes are generated in a process of oxidation for forming the insulating layer on a bottom surface of the silicon layer.

Abstract: An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.

Abstract: An organic light emitting device display may be formed that is suitably passivated while still permitting electrical access to cathodes and anodes via electrical contacts. In one embodiment, a barrier layer may be formed over the light emitting material to prevent moisture or other ambient attack. The barrier layer may be covered with other layers to form an outer and inner via down to the cathode or anode to be contacted. A contact metal may be provided to the anode or cathode. The layers over the barrier layer permit patterning and contact formation while the barrier layer adequately protects the light emitting material during those steps and thereafter.

Abstract: A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag and formed on a p-type semiconductor layer; a protective film with which the first metal layer except a part region is covered; and a second metal layer not containing Ag and formed on the protective film.

Abstract: A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer 12 extended to the surface of the semiconductor chip. Each n−-type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions 14 and p-type well region 13 including an n+-type region 15 is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 &mgr;m or less.

Abstract: Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resistance variable material, and then plating a conductive material to a desired thickness to form a second (upper) electrode.

Abstract: An on-chip voltage sensor that selectively eliminates noise from a voltage measurement is provided. The on-chip voltage sensor has resistive and capacitive components in the voltage divider, thus allowing a voltage on a section of a computer chip to be measured exclusive of high-frequency noise. Further, a method for measuring a voltage on a section of a computer chip using a voltage divider having a resistor and a capacitor is provided. Further, a computer chip having an on-chip voltage sensor is provided. Further, a method and apparatus for observing voltages at multiple locations on an integrated circuit.

Abstract: An ESD protection circuit having a high triggering threshold. The ESD protection circuit comprises a semiconductor-controlled rectifier (SCR) and a bipolar-junction-transistor (BJT). The SCR comprises an anode, an anode gate, a cathode gate and a cathode. The anode is coupled to a first pad. The cathode gate and the cathode are coupled to a second pad. The BJT transistor is parasitic under a metal-on-semiconductor (MOS) transistor and has a collector and an emitter. Either the collector or the emitter is coupled to the anode gate, and the other is coupled only to the second pad. Current generated at the anode is shared by the BJT transistor. A larger current is required to trigger the SCR in the ESD protection circuit of the present invention and result in a latch-up. Thus, latch-up caused by accidental noise is prevented during normal power operations.

Abstract: Field effect transistor structures include a channel region formed in a recessed portion of a substrate. The recessed channel portion permits the use of relatively thicker source/drain regions thereby providing lower source/drain extension resistivity while maintaining the physical separation needed to overcome various short channel effects. The surface of the recessed channel portion may be of a rectangular, polygonal, or curvilinear shape. In a further aspect of the present invention, transistors are manufactured by a process in which a damascene layer is patterned, the channel region is recessed by etch that is self-aligned to the patterned damascene layer, and the gate electrode is formed by depositing a material over the channel region and patterned damascene layer, polishing off the excess gate electrode material and removing the damascene layer.

Abstract: The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.