Abstract: A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40° C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.

Abstract: An induction heating device for heating cooking vessels includes at least three concentric inductors and implements a step of heating a load. For a load covering at least three inductors, at least one intermediate inductor that is covered and that is determined in such a manner as to homogenize the input of heat to the load is not energized during the heating step. Applications of the device include domestic hot plates.

Abstract: The present invention provides an autofocus system for an imaging system, such as an external drum platesetter. The autofocus system automatically focuses each of a plurality of scan lines produced by an imaging system on a supply of recording material, and includes a control loop with scan line to scan line feedforward of a motor command waveform.

Abstract: A method for detecting and compensating inclination of an objective lens includes the steps of: initially driving an optical disk and detecting a record signal while travelling on the track of the optical disk; checking whether a GFS signal according to the rotation of the optical disk is normally detected; checking a center error signal value outputted from the optical pick-up which reads a record data on the optical disk in case that the GFS signal is abnormally detected; and discriminating inclination of the objective lens on the basis of the checked center error signal value, thereby judging inclination of the objective lens quickly and accurately. In order to discriminate inclination of the objective lens by the optical disk driving apparatus, the GFS signal and the center error signal generated according to the rotation of the optical disk are all taken into consideration, so that the inclination of the objective lens in the optical pick-up is accurately and quickly discriminated.

Abstract: A method for wireless power transmission in a system comprising a power transmitter which in turn comprises a first light source and means for directing the light emitted by the first light source to a desired direction, and at least one power receiver comprising a first photo-detector for receiving the emitted light and for converting it into electric current. A second light source included in the power transmitter is used for transmitting light around the light emitted by the first light source and substantially parallel to it, the intensity of the light being lower than that of the light emitted by the first light source. A second photo-detector included in the power receiver is used for detecting the light emitted by the second light source and for transmitting a control signal to the power transmitter in response to a successful reception of the light emitted by the second light source.

Abstract: Beam control over headlamps is performed with the arriving position, a predetermined time later from the present time, as a target position. At this time, the radius of curvature of a traveling road ahead of a vehicle is calculated on the basis of data from a navigation unit, and the arriving position of one's own vehicle is estimated on the basis of an advisable vehicle speed corresponding to the radius of curvature. Thus, the arriving position of one's own vehicle can accurately be estimated by taking into consideration variation in vehicle speed that is likely to occur in the near future.

Abstract: An improved image sensor constructed from a photodiode and a transimpedance amplifier having an input connected to the photodiode. The present invention utilizes a clamping circuit to prevent the potential at the input of the transimpedance amplifier from causing the photodiode to become forward biased. In the preferred embodiment of the present invention, the transimpedance amplifier includes a transistor connecting the input to the output, and the clamping circuit includes a circuit for holding the gate of the transistor at a clamping potential.

Abstract: A bus system and an imager for transferring signals from a plurality of signal streams to an output includes a plurality of signal buses in parallel and a control system. The control system multiplexes the signals from two or more of the plurality of signal streams onto two or more of the plurality of signal buses and allows the signals to substantially charge each of the two or more of the plurality of signal buses before demultiplexing the signals to the output. A method for transferring signals includes multiplexing signals on to two or more of a plurality of signal buses and allowing the signals to substantially charge each of the two or more of the plurality of signal buses before demultiplexing the signals to an output.

Abstract: An optocoupler package is disclosed. The optocoupler package comprises a carrier substrate and a plurality of conductive regions on the carrier substrate. An optoelectronic device, an optically transmissive medium, and a plurality of conductive structures can be on the carrier substrate.

Abstract: A droplet/electrospray device and a liquid chromatography-electrospray system are disclosed. The droplet/electrospray device comprises a substrate defining a channel between an entrance orifice on an injection surface and an exit orifice on an ejection surface, a nozzle defined by a portion recessed from the ejection surface surrounding the exit orifice, and an electrode for application of an electric potential to the substrate to optimize and generate droplets or an electrospray. A plurality of these electrospray devices can be used in the form of an array of miniaturized nozzles. The liquid chromatography-electrospray device comprises a separation substrate defining an introduction channel between an entrance orifice and a reservoir and a separation channel between the reservoir and an exit orifice, the separation channel being populated with separation posts perpendicular to the fluid flow.

Abstract: The present invention relates to a device for testing particles for composition and concentration. The device includes a particle counter, a collector screen, and a mass spectrometer. In one embodiment, the collector screen is positioned to receive particles received by the particle counter, and the mass spectrometer is positioned to receive counted particles retained on the collector screen.

Abstract: Depending on the RF driving voltage amplitude value and the frequency of each frequency component of wideband auxiliary AC voltages, the wideband auxiliary AC voltage comprising plural different frequency components is optimized so that undesired ions having mass-to-charge ratios within the required range will be resonantly ejected from the ion trap electrodes.

Abstract: A charged particle beam method and apparatus use a primary electron beam to irradiate a specimen so as to induce the specimen to emit secondary and backscattered electrons carrying information about topographic and material structure of the specimen, respectively. The specimen may be an article to be inspected. The electrons emitted by the specimen are deflected in the electric field of an electron mirror and detected using an electron detector of the apparatus. The electron mirror permits the detection of the secondary electrons traveling close to the optical axis of the apparatus and corrects the aberrations of the secondary electrons. In addition, the electron mirror accelerates the electrons improving the detection efficiency of the electron detector and enhancing the time-of-flight dispersion characteristics of the secondary electron collection. A second electron mirror can be provided to further control the direction of the electron's landing on the surface of the electron detector.

Abstract: A measurement method and apparatus, which are capable of simply measuring the water content of an object with a high degree of accuracy, is characterized by irradiating the surface of the object with at least two monochromatic light beams having different wave length values, one of the wave length values being less than 1350 nm; measuring the intensity of light for each of the light beams reflected from the surface of the object using a light intensity-measurement unit; obtaining the reflective absorbance (A&lgr;) of each light beam; calculating a reflective-absorbance differences (&Dgr;A&lgr;) between, or a reflective-absorbance ratio (A&lgr;′) of, the respective light beams, respectively; and estimating the water content of the measured object by using the relationship between water content and the reflective-absorbance differences or reflective-absorbance ratio, which relationship stored in a memory device in advance.

Abstract: An isotope gas measuring apparatus for measuring concentrations of components in a sample gas includes two sample cells through which the sample gas passes; a control cell filled with a gas having no absorbance at a wavelength of infrared light to be measured; a light source irradiating infrared light to the sample cells and the control cell; an optical coupler for coupling light permeated from the sample cells and the control cell; a first interference filter disposed between one sample cell and the optical coupler; a second interference filter disposed between the other sample cell and the optical coupler; and an optical detector for detecting infrared light from the optical coupler. The apparatus can minimize an influence of drift, and have a simple structure.

Abstract: A method of the present invention includes exposing a structure to first electromagnetic radiation including at least one wavelength absorbed by a predetermined substance that is to be detected. Such substance can be water, a water-soluble substance, or fungi, the presence of which can be a significant problem in a structure such as a house or building. The method includes sensing second electromagnetic radiation from the structure, the second radiation based on the first radiation. The method also includes determining whether the substance is present in the structure, based on the sensed second radiation. If the substance to be detected is water and the determining step reveals a water-suspect area in the structure, the method can include testing the water-suspect area of the structure to determine whether water is present therein. If water is confirmed by the determination to be present in the structure, the method can include a step of determining the source of the water.

Abstract: A method of the present invention includes exposing a structure to first electromagnetic radiation including at least one wavelength absorbed by a predetermined substance that is to be detected. Such substance can be water, a water-soluble substance, or fungi, the presence of which can be a significant problem in a structure such as a house or building. The method includes sensing second electromagnetic radiation from the structure, the second radiation based on the first radiation. The method also includes determining whether the substance is present in the structure, based on the sensed second radiation. If the substance to be detected is water and the determining step reveals a water-suspect area in the structure, the method can include testing the water-suspect area of the structure to determine whether water is present therein. If water is confirmed by the determination to be present in the structure, the method can include a step of determining the source of the water.

Abstract: A septum electromagnet deflects and splits a particle beam. A preferred embodiment of the septum electromagnet comprises a septum conductor that divides the septum electromagnet to define first and second beam deflecting magnetic pole spaces. First and second magnetic fields are generated in, respectively, the first and second beam deflecting magnetic pole spaces by electric currents flowing through the coils associated with the septum conductor. The direction of the first magnetic field is opposite to the direction of the second magnetic field, such that a particle beam passing through the first beam deflecting magnetic pole space is angularly deflected by an amount and a particle beam passing through the second beam deflecting magnetic pole space is angularly deflected by an opposite amount.

Abstract: A magnetic lens employs a solenoid field containing a passive pole piece that shapes the solenoid field to create a demagnifying lens that has very low geometrical aberrations by adjusting the field upstream and downstream of the gap between the pole pieces to create a negative term in the formula for spherical aberrations, subtracting a significant amount from the contribution to the aberrations that comes from the field in the gap.

Abstract: An improved quadrupole mass spectrometer is described. The improvement lies in the substitution of the conventional hot filament electron source with a cold cathode field emitter array which in turn allows operating a small QMS at much high internal pressures then are currently achievable. By eliminating of the hot filament such problems as thermally “cracking” delicate analyte molecules, outgassing a “hot” filament, high power requirements, filament contamination by outgas species, and spurious em fields are avoid all together. In addition, the ability of produce FEAs using well-known and well developed photolithographic techniques, permits building a QMS having multiple redundancies of the ionization source at very low additional cost.

Abstract: The present invention relates to a device and method for introducing solar radiation energy into a photoreactor. This reactor can be employed for performing photochemical or photobiological reactions, i.e., syntheses, decontamination, disinfection and treatment processes. The device is characterized in that the photoreactor consists of one or more transparent outer tubes irradiated with light from the exterior, the reaction medium being passed through the tubes and thereby exposed to the radiation, wherein one or more empty transparent tubes with a smaller diameter are provided in the interior of said outer tubes, especially in a concentric arrangement, and the reaction medium is passed through the gap formed between an outer and an inner tube or, in the case of several inner tubes, through the gaps formed therebetween.

Abstract: A method based on time-resolved, laser-induced fluorescence spectroscopy for the characterization and fingerprinting of petroleum oils and other complex mixtures. The method depends on exciting the wavelength-resolved fluorescence spectra of samples using ultraviolet pulsed laser radiation, measuring them at specific time gates within the temporal response of the excitation laser pulse, and comparing them in terms of their shapes alone without taking into account their relative intensities. The method provides fingerprints of crude oils without resorting to any kind of approximation, for distinguishing between closely similar crude oils of the same grade, and is useful in remote and non-remote setups, along with applications in fingerprinting blended and non-blended crude oils using different ultraviolet excitation wavelengths. Applications include estimating ∘API gravity of crude oils and monitoring degradation of mineral oils.

Abstract: A stimulable phosphor sheet for radiation image recording and reproducing method is composed of at least two partitioned stimulable phosphor films laminated one or another [the partitioned stimulable phosphor film is composed of plural partitions that divide the stimulable phosphor film on a plane thereof to give plural stripe sections, and a stimulable phosphor layer placed in each stripe section] in such manner that the partitions of one stimulable phosphor film are arranged to cross the partitions of another stimulable phosphor film.

Abstract: An assembly part for constituting a unit in a vacuum column is provided with wirings and wiring terminals. Each wiring is provided on a first insulating film, and is covered with a second insulating film made of an electro-deposited polyimide film. The assembly part is used to constitute a semiconductor manufacturing system such as an electron beam exposure system.

Abstract: The correct handover position between the gripper and the e-chuck is located using a light source and a 2-D photosensor. As the e-chuck is in the loading position it can be driven forwards or backwards in the beam direction by rotating the main whisper scan rotor. The line drawn across the 2-D array by a spot of light from the light source passing through a hole in a flag attached to the e-chuck is recorded. Similarly, the line drawn by a spot of light from the same source passing through a hole in the flag attached to the gripper is also recorded. The point of intersection is the ideal transfer point. For transfer the e-chuck is then driven to this point which can be checked from the 2-D sensor. The gripper is then also driven to the same point and alignment can be checked using the light source and sensor.

Abstract: An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

Abstract: An EUV source (82) that delivers a laser beam (94, 96) asymmetrical relative to first collection optics (88). The first collection optics (88) has an opening (90, 92) for the laser beam (94, 96) that is positioned so that the laser beam (94, 96) is directed towards the plasma off-axis relative to the collection optics (88). Thus, the strongest EUV radiation (98, 100) is not blocked by the target production hardware (84).

Abstract: An apparatus (1) for treatment with radiation for personal care, comprising a housing (2) provided with a UV source (3) and a wall (4) made of UV-transparent material which covers the housing (2) and which has a central area (7) and side areas (8) adjoining the central area (7). The wall (4) has a lower transmission to radiation with a wavelength <320 nm near the central area (7) than near the side areas (8). Thus the effective radiation energy of radiation with a wavelength <320 nm reaching the side portions of the irradiation plane (9) approximates a value of 0.14 W/m2 (European standard EN 60335-2-27), while the effective radiation energy of radiation with a wavelength <320 nm reaching the central portion of the irradiation plane (9) also approximates this value. This results in a practically uniform distribution of effective radiation energy of radiation with a wavelength <320 nm over the radiation surface (9) as a whole.

Abstract: A virtual gauging system for use in a lithographic process is described that includes means for gauging a region at a surface of a wafer when the region is located away from an axis of illumination producing wafer surface data, while other portions of the wafer are being illuminated. The system also includes means for converting the wafer surface data into wafer correction data and means for adjusting a separation distance between an exposure lens and the region at the surface of the wafer based on the correction data when the region is located at the axis of illumination. The means for gauging includes at least two wafer surface gauges located on opposite sides of an illumination slot.

Abstract: A surface sensing device includes an articulating head adapted for attachment to the spindle of a measuring machine and having two relatively rotatable parts capable of rotation about two mutually perpendicular axes. The device additionally includes a stylus assembly having a relatively stiff hollow stylus carrier, and a relatively flexible hollow stylus. An optical transducer system is provided within the stylus assembly and comprises a fixed light source which directs a beam of light towards a stylus tip, and a retro-reflective component at the tip which reflects the beam back to a fixed detector. The arrangement is such that lateral displacement of the stylus tip when the tip is in contact with a surface can be measured directly.

Abstract: A paper sensor uses two sample and hold circuits which are fired by the phase and antiphase of an oscillator that also drives an infrared light emitting diode (LED). These circuits sample the output from a phototransistor. If the outputs from the phototransistor are different when the LED is lit and unlit, then a comparator will give an output, thus synchronously filtering out unwanted infrared light that may cause a false paper reading.

Abstract: At least one qubit in a quantum computing device is created. At least one photon is placed into a superposition of quantum states. The quantum states each have an associated probability amplitude. The quantum states each are associated with a mode from a group of orthogonal modes. The probability amplitudes associated with the quantum states of the at least one photon are temporally separated thereby forming at least one qubit, the alternative values of which are thus temporally identifiable.

Abstract: A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove pattern having a widened portion and narrowed portions provided on both sides of such widened portion. A second multi-layered film is then epitaxially grown on the substrate so as to cover the groove pattern, by successively growing an n-type second lower clad layer, a second active layer, a p-type second upper clad layer and a p-type cap layer. The cap layer is then patterned to thereby form a current injection layer on the second multi-layered film within the groove pattern so as to be extended along the longitudinal direction of such groove pattern.

Abstract: A gap conductor structure for an integrated electronic circuit that may function as an electronic fuse device or as a low capacitance inter level signal line is integrated as part of the semi-conductor chip wiring. The gap conducting structure includes one or more air gap regions of predefined volume that fully or partially exposes a length of interlevel conductor layer in an IC. Alternately, the air gap region may wholly located within the dielectric region below a corresponding conductor and separated by insulator. When functioning as a fuse, the gap region acts to reduce thermal conductivity away from the exposed portion of the conductor enabling generation of higher heat currents in the conducting line with lower applied voltages sufficient to melt a part of the conducting line. The presence of gaps, and hence, the fuses, are scalable and may be tailored to the capacity of currents they must carry with the characteristics of the fuses defined by a circuit designer.

Abstract: A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or more openings, and each of the openings includes one or more overhangs. The overhangs cover a hetero-epitaxial interface region between a film expitaxially grown on the substrate and the substrate itself, thereby preventing a “line-of-sight” view along a surface norm of the substrate in the hetero-epitaxial interface region between the epitaxial film and the substrate. There is only one hetero-epitaxial interface region for each of the openings, which results in only one epitaxial growth front coalescence per opening, thereby reducing the number of highly defective regions from epitaxial growth front coalescence by a factor of two.

Abstract: In a non-volatile semiconductor memory having a peripheral circuit zone and a memory zone including plural memory cells each having a floating gate and a control gate, an interlayer insulator is formed over the control gate of the memory cells and a gate electrode in the peripheral circuit zone. A groove is formed in the interlayer insulator film to longitudinally extend along a word line which constitutes the control gate for a plurality of memory cells arranged in one line. This groove penetrates through the interlayer insulator film to reach the word line over the whole length of the word line. A conducting material is deposited on the interlayer insulator film to fill up the groove so that a plate-shaped contact is formed in the groove. The conducting material is patterned to form an overlying interconnection extending on the interlayer insulator film along the word line.

Abstract: A TDI sensor includes a column of pixels ordered from an initial pixel to a final pixel where each pixel includes reticulated clock conductors arranged to define a reticulation area and a pixel charge handling capacity. The reticulation area of a pixel increases from the final pixel to the initial pixel, and the pixel charge handling capacity increases from the initial pixel to the final pixel. The sensor includes a first bus structure of polysilicon, where the bus structure includes register element sets and each register element set includes a plurality of clock conductors. Each register element set includes a corresponding pixel reticulation area, and the pixel reticulation area of a first register element set is unequal to a pixel reticulation area of another register element set. The sensor also includes a second bus structure of metal disposed substantially diagonally to the first bus structure. The second bus structure includes clock bus sets, and each clock bus set includes bus conductors.

Abstract: A p type well region, a field insulation film, a gate insulation film, and a gate-use poly-Si layer are formed on the surface of a silicon substrate, after which a laminate of a silicon nitride layer and a resist layer is used as a mask in ion implantation, which forms a low-concentration source region, Source contact region, drain region, and drain contact region. Side spacers are formed on both side walls of the gate-use poly-Si layer, after which the laminate of the gate-use poly-Si layer, the side spacers, and the gate insulation film is used along with the field insulation film as a mask to perform ion implantation via the silicon nitride layer, which forms a high-concentration source region and drain region. After a silicide conversion treatment, the unreacted metal is removed, which forms a silicide layer.

Abstract: A contact structure for a ferroelectric memory device integrated in a semiconductor substrate and includes an appropriate control circuitry and a matrix array of ferroelectric memory cells, wherein each cell includes a MOS device connected to a ferroelectric capacitor. The MOS device has first and second conduction terminals and is covered with an insulating layer. The ferroelectric capacitor has a lower plate formed on the insulating layer above the first conduction terminals and connected electrically to the first conduction terminals, which lower plate is covered with a layer of a ferroelectric material and coupled capacitively to an upper plate. Advantageously, the contact structure comprises a plurality of plugs filled with a non-conductive material between the first conduction terminals and the ferroelectric capacitor, and comprises a plurality of plugs filled with a conductive material and coupled to the second conduction terminals or the control circuitry.

Abstract: In a SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method, a multilayer barrier layer with a potential barrier and a diffusion barrier is used to reliably prevent diffusion of impurities between element layers. This allows semiconductor circuits to be produced with smaller structure sizes and with a higher integration density.

Abstract: A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta2O5 films formed on the lower electrodes, composite films formed on the Ta2O5 films and upper electrodes formed on the composite films.

Abstract: A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device (72) provides an enhanced gain operation, while device (88) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.

Abstract: The compensation component is formed with compensation regions in a semiconductor between two electrodes. By varying the second field and/or the first field, a location of a maximum field strength is displaced into the center of the compensation regions between the electrodes.

Abstract: A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. The one or more buried layers create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. The parallel JFET conduction channels provide the HVFET with a low on-state resistance.

Abstract: CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si1−xGex layer is also disposed between the electrically insulating layer and the unstrained silicon active layer. The Si1−xGex layer forms a first junction with the unstrained silicon active layer and has a graded concentration of Ge therein that decreases monotonically in a first direction extending from a peak level towards the surface of the unstrained silicon active layer. The peal Ge concentration level is greater than x=0.15 and the concentration of Ge in the Si1−xGex layer varies from the peak level to a level less than about x=0.1 at the first junction. The concentration of Ge at the first junction may be abrupt. More preferably, the concentration of Ge in the Si1−xGex layer varies from the peak level where 0.

Abstract: A method and structure for a silicon on insulator (SOI) device with a body contact are provided. The body contact is formed by epitaxial growth from a substrate to the body region of the device. The body contact is self-aligned with the gate of the device and is buried within an isolation region outside of the active area of the device. Thus, the body contact does not increase parasitic capacitance in the device, not does the body contact affect device density. No additional metal wiring or contact holes are required.

Abstract: An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure contiguous with the well region, a second isolation structure contiguous with well region and spaced apart from the first isolation structure, a dielectric layer disposed over the well region and the first and second isolation structures, and a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, and a second n-type portion contiguous with the second p-type portion, wherein at least a portion of the first p-type and first n-type portions overlap the first isolation structure and at least a portion of the second p-type and second n-type portions overlap the second isolation structure.

Abstract: A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an emitter resistance and restrain an occurrence of an emitter plug effect. Such bipolar transistor can be utilized in a CMOS semiconductor device.

Abstract: A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.

Abstract: The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of said component, including, on the P region a layer of a platinum silicide, or of a metal silicide having with the P-type silicon a barrier height lower than or equal to that of the platinum silicide.