Abstract: A semiconductor manufacturing process is disclosed that is suitable for making both negative differential resistance (NDR) and non-NDR devices at the same time. An NDR process is thus integrated within a conventional CMOS process so that compatibility with existing fabrication procedures is maintained. In addition, many of the NDR process steps and non-NDR process steps are shared in common to form features of such devices at the same time.

Abstract: A process is disclosed for manufacturing a film that is smooth and has large nitride grains of a diffusion barrier material. Under the process, a nitride of the diffusion barrier material is deposited by physical vapor deposition in an environment of nitrogen. The nitrogen content of the environment is selected at an operating level such that nitride nuclei of the diffusion barrier material are evenly distributed. A grain growth step is then conducted in the nitrogen environment to grow a film of large nitride grains of the diffusion barrier material. Also disclosed is a stack structure suitable for MOS memory circuits incorporating a lightly nitrided refractory metal silicide diffusion barrier with a covering of a nitride of a diffusion barrier material. The stack structure is formed in accordance with the diffusion barrier material nitride film manufacturing process and exhibits high thermal stability, low resistivity, long range agglomeration blocking, and high surface smoothness.

Abstract: The manufacturing method of a semiconductor device includes a step of forming a lower wiring on a semiconductor substrate, a step of forming a layer insulating film on the lower wiring, a step of forming an opening that exposes the lower wiring by removing a part of the layer insulating film, a step of forming a barrier film in the opening and a step of forming an upper wiring in the opening, where the lower wiring and the upper wiring are copper including wirings composed of copper or a copper alloy, the barrier film covers the bottom face and the side face of the opening, and the barrier film on the bottom face of the opening is formed so as to have its thickness to be less than twice the diffusion length of the copper atoms in the barrier film.

Abstract: A method of forming a dual damascene structure comprises the steps of providing a substrate having a first conductive layer formed thereon, and then sequentially forming a first dielectric layer, an anti-reflection layer and a second dielectric layer over the substrate. Next, the first dielectric layer, the anti-reflection layer and the second dielectric layer are patterned to form a first opening that exposes the conductive layer. Thereafter, the second dielectric layer is patterned to form a trench (or second opening) in a position above the first conductive layer. The trench and the first opening together form an opening of the dual damascene structure. Finally, a second conductive material is deposited into the opening and the trench to form conductive lines and the dual damascene structures.

Abstract: A copper interconnect having a transition metal-nitride barrier (106) with a thin metal-silicon-nitride cap (108). A transition metal-nitride barrier (106) is formed over the structure. Then the barrier (106) is annealed in a Si-containing ambient to form a silicon-rich capping layer (108) at the surface of the barrier (106). The copper (110) is then deposited over the silicon-rich capping layer (108) with good adhesion.

Abstract: A method of manufacturing a MOSFET semiconductor device includes forming a gate electrode over a substrate and a gate oxide between the gate electrode and the substrate. Inert dopants are then implanted within the substrate to form amorphized source/drain regions in the substrate extending to a first depth significantly greater than the intended junction depth. The amorphized source/drain regions are implanted with source/drain dopants such that the dopants extend into the substrate to a second depth less than the first depth, above and spaced apart from the end-of-range defect region created at the first depth by the amorphization process. Laser thermal annealing recrystallizes the amorphous regions, activates the source/drain regions and forms source/drain junctions.

Abstract: A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.

Abstract: The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechanical polishing. The present invention applies a low temperature to bake the coated BARC layer before BARC material cross-links and induces the anti-reflective characteristic. Then, the BARC layer is planarized by chemical mechanical polishing. Next, a high temperature baking of the BARC layer is provided before coating the photoresist, so formation of the BARC layer is controlled with minimized variation in surface level and has the antireflective characteristic. Thus, the profile distortion on the via and the critical dimension control for the via are improved by patterning the via on a planar and an anti-reflective surface.

Abstract: A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A process reactor or head holds a workpiece between an upper rotor and a lower rotor. A head lifter lowers the head holding the workpiece into contact with the liquid. The head spins the workpiece during or after contact with the liquid. The upper and lower rotors have side openings for loading and unloading a workpiece into the head. The rotors are axially moveable to align the side openings.

Abstract: A memory cell fabrication avoiding bit line encroaching. A first insulating layer and a first masking layer are formed on a semiconductor substrate with a diffused region. The first masking layer and the first insulating layer are defined to form a first trench above the diffusion region. A second masking layer is formed to fill the first trench, and a hole is formed by removing a portion of the second masking layer above the diffusion region. A bit line contact is formed by removing a portion of the first insulating layer beneath the hole to expose the diffusion region. A bit line contact plug is formed by filling the bit line contact with a first conductive layer. The residual second masking layer and the first masking layer are removed to form a second trench. A bit line is formed by filling the second trench with a second conductive layer.

Abstract: A plasma etching method includes forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber. Substantially all polymer material is plasma etched from the chamber internal surfaces while at least some polymer material remains on the wafer. In another aspect, a semiconductor wafer is positioned on a wafer receiver within a plasma etch chamber. A photoresist layer has previously been formed thereon and has openings formed therethrough. First plasma etching is conducted through openings formed in the photoresist layer with a gas comprising carbon and a halogen to form openings in material on the wafer. A first polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching.

Abstract: A process for planarization of a flash memory cell is described. A first polysilicon pattern having a top is formed over a substrate. A high-density plasma (HDP) oxide layer is deposited on the first polysilicon pattern, wherein the HDP oxide layer has a protuberance over the first polysilicon pattern. The HDP oxide layer and the first polysilicon pattern are partially etched by a sputtering etch technology. In this etching step, the protuberance is removed, the first polysilicon pattern is lowered, and the top of the first polysilicon pattern is rounded. A second polysilicon pattern covering the first polysilicon pattern is formed, wherein the second polysilicon pattern is wider than the first polysilicon pattern.

Abstract: A method of eliminating contamination of tunnel oxide in stacked gates due to SAS photoresist process and preventing of n+ implantation caused by resist residue from the SAS photoresist process in fabricating of semiconductor memory devices is disclosed. The process provides for providing stacked gates separated by trenches on the semiconductor memory device. Source and drain implants are performed on the semiconductor memory device before the SAS etch is accomplished. The trenches between the stacked gates are filled with oxide so as to cover the entire surface of the semiconductor memory device prior to applying a SAS photoresist mask. Then, a SAS photoresist mask is applied to a flat top surface of the semiconductor memory device. A SAS etch is performed on the semiconductor memory device so as to remove the oxide.

Abstract: An opening through an insulating layer between a first layer and a second layer of a semiconductor device is formed where the second layer is a polysilicon or amorphous silicon hard mask layer. The polysilicon or amorphous silicon hard mask layer is etched to form at least one opening through the polysilicon or amorphous silicon hard mask layer using a patterning layer as a mask having at least one opening. The insulating layer is etched to form the opening through the insulating layer using the etched polysilicon or amorphous silicon hard mask layer as a mask. The etched polysilicon or amorphous silicon hard mask layer is nitridized prior to subsequent processing.

Abstract: A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8.

Abstract: There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.

Abstract: Embodiments of the present invention are directed to a method of reducing boron outgassing at trench power IC's oxidation process for the sacrificial oxide layer whereby the threshold voltage of the power ICs can be improved and the yield of the product can be enhanced. Nitrogen is introduced into the furnace in the entire oxidation process, including the main oxidation steps. In the preparing step of ramp up, the ramp up step and the stable step, prior to the main oxidation, nitrogen is introduced in a sufficient flow rate to make the environment near the saturated vapor pressure to reduce boron outgassing at the trench.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: The present invention describes a method for preventing a photoresist layer from delaminating, peeling, away from the surface of a substrate that already contains an etched three dimensional structure such as a hole or a trench. The process comprises establishing a saturated vapor phase of the solvent media used to formulate the photoresist layer, above the surface of the coated substrate as the applied photoresist is heated in order to “cure” or drive off the retained solvent constituent within the layer. By controlling the rate and manner in which solvent is removed from the photoresist layer the layer is stabilized and kept from differentially shrinking and peeling away from the substrate.

Abstract: A glass cleaning wipe comprising a nonwoven fabric containing wood pulp fibers, the nonwoven fabric is impregnated with a glass cleaning composition.

Abstract: A nonwoven web made from a polymeric fiber blend comprising at least one elastomeric polyolefin and at least one nonelastomeric polyolefin useful as the elastic base sheet for a nonwoven laminate is disclosed. Preferably, the polymeric blend will comprise a nonelastomeric resin in the range of from about 10 to about 90 percent by weight, and an elastomeric resin of from about 90 to about 10 percent by weight. The elastomeric polyolefin will have a density of less than about 0.885 g/cm3 and the nonelastomeric polyolefin will have a density of at least about 0.890 g/cm3. In one particular embodiment, the polymeric blend may comprise about 50 percent to about 90 percent by weight of a narrow molecular weight distribution polyethylene and about 50 percent to about 10 percent by weight of a nonelastomeric polyolefin such as a linear low density polyethylene.

Abstract: The invention relates to low-alkali or alkali-free alkaline-earth aluminoborosilicate glasses of the following composition (in wt.-% on an oxide basis) SiO2>49-65; B2O3 0.5-4.5; Al2O3>10-23; MgO>2.7-7; CaO 0.5-10; SrO>15-22; BaO 0.5-7; provided that MgO+CaO+SrO+BaO>20-35; SnO2 0-2; ZrO2 0-2; ZrO2 0-2; TiO20-2; CeO20-1.5; ZnO 0-1; Na2O 0-2; K2O 0-2; provided that Na2O+K2O equals 0-3. The inventive glasses are especially suitable for use as substrates in thin film photovoltaic technology and as glasses for bulbs.

Abstract: The present application is directed to ceramic compositions and, more specifically, to a silicon carbide composition and method of making it through liquid phase sintering. In one embodiment, the present invention is directed to an unsintered ceramic body including a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound and silicon carbide. In another embodiment, the present invention is directed to a method of making a sintered ceramic body. The method includes combining a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound, and silicon carbide to form a green ceramic. The method further includes shaping the green ceramic into a ceramic body and sintering the ceramic body.

Abstract: Sintered alumina of Q value of greater than 25,000 and up to and greater than 45,000 at 10 GHz and at 25° C., useful in useful in dielectric resonators can be obtained by sintering alumina powders with low level of impurities at between 1500° C. and 1600° C. until a density of at least 98% of its theoretical value is obtained.

Abstract: The disclosed invention relates to Bi2O3—ZnO—Ta2O5 dielectric compounds and compositions, and to their manufacture. The compounds of the invention have outstanding K, Q, TCF, and TCC. Examples of these properties include a K of between 58 and 80, a low dielectric loss (tan &dgr;<0.003), and a TCC<30 ppm/° C. Ceramic compositions produced include those represented by Bi2(ZnTa2)xO6x+3 where 0.57≦x≦1.0, Bi2(ZnTay)2/3O((5y+11)/3) where 1.0≦y≦3.0, as well as by Bi2(ZnTay)2/3O((5y+11)/3) where 1.0≦y≦3.0 with the proviso that y is not=2.0. Solid solutions of compounds defined by the formula r(Bi2(Zn1/3Ta2/3)2O7)-(1−r)(Bi3/2Zn2/3)(Zn1/2Ta3/2)O7)) where 0<r<1 also are produced.

Abstract: A method for regenerating deactivated sulfonated cation exchange catalysts comprises washing the deactivated catalyst with phenol-water mixtures comprising about 5-20 wt. % of water in phenol at a temperature of about 70-95° C.

Abstract: Zeolite granulates having improved abrasion resistance, obtained by spraying the zeolite granulates with an aqueous silica sol solution and then optionally drying and calcining them.

Abstract: Co-precipitated CoCuMn and CoCuMg catalysts are used in Fischer-Tropsch synthesis.

Abstract: Disclosed are new catalysts for electroless metallization deposition, particularly catalysts that can be selectively activated and may be free of palladium and/or tin. Catalysts of the invention are preferably employed for electroless copper deposition.

Abstract: A complex catalyst for asymmetric epoxidation of enones containing an optically active binaphthol, lanthanum triisopropoxide, triphenylphosphine oxide substituted with electron withdrawing groups in the parapositions of the phenyl groups, and cumene hydroperoxide or tert-butyl hydroperoxide.

Abstract: The present invention relates to a composition of a carboxylate metal salt in combination with a heated polymerization catalyst to improve the flowability and operability of the catalyst. The invention also relates to methods for preparing the catalyst composition and to its use in a polymerization process.

Abstract: The invention features a photocatalytic body including: a porous medium 12 formed on a substrate 10; and photocatalytic material 14 supported on the porous medium. Supporting the photocatalytic material 14 on the porous medium 12 enables enhancement of its catalytic activity.

Abstract: The invention is directed to a method of synthesising silicoaluminophosphate molecular sieves using synthesis templates that contain at least one dimethylamino moiety. The use of dimethylamino moiety containing templates results in good quality SAPO molecular sieves of CHA framework type.

Abstract: A method of dispersing nanosized catalyst particles on the surface of larger catalyst carrier particles is disclosed. The coating process is done dry and yields high effective surface area of nanosized catalyst particles coated on the surface of catalyst carrier particles. In this process, nanosized catalyst particles and catalyst carriers are mechanically mixed in a high velocity and impact force environment to which catalyst particles are embedded, or filmed, on the surface of catalyst carrier particles without using water or any other additional chemicals. The catalyst composite structure produced comprises better coating uniformity of the catalyst particle on its catalyst carrier. The catalyst particle/catalyst carrier composite produced can be applied to a support structure, such as a monolith as readily used in automotive or other applications.

Abstract: A hydrogenation catalyst and a process for its production, wherein the catalyst can be used for the hydrogenation of nitro groups in nitroaromatics to form the corresponding amines in the presence of water.

Abstract: Disclosed is a heat-sensitive recording material comprising a support and a heat-sensitive coloring layer formed on the support, wherein the heat-sensitive coloring layer contains either composite particles in which a leuco dye is contained in solid resin particles or microcapsules in which a leuco dye and a hydrophobic organic solvent are contained, the heat-sensitive coloring layer optionally contains other leuco dye which forms a color different from the color formed by the leuco dye contained in the composite particles or in the microcapsules, and the developer is N-p-toluenesulfonyl-N′-3-(p-toluenesulfonyloxy)phenylurea.

Abstract: A new agricultural and horticultural fungicide having an excellent control effect is provided. 4-Quinolinol derivatives represented by the following formula: or agriculturally and horticulturally acceptable acid addition salts thereof.

Abstract: Agrochemical compositions having fungicidal action and comprising as active compounds compounds of the formula I where R1 is hydrogen, C1-C6-alkyl, C1-C6-alkylcarbonyl, formyl or C1-C6-haloalkylcarbonyl; R2 is halogen, C1-C6-alkylthio, C1-C6-alkoxy, C3-C6-cycloalkyl-C1-C6-alkoxy, C1-C6-alkoxy-C1-C6-alkyl, halo-C1-C6-alkoxy, C1-C6-alkylsulfonyl, C1-C6-alkylsulfinyl, halo-C1-C6-alkylsulfonyl, cyano or a radical NR13R14; R3-R12 are hydrogen, halogen, C1-C8-cycloalkyl, C1-C6-alkyl, halo-C1-C6-alkyl, C1-C6-alkoxy, halo-C1-C6-alkoxy, C1-C6-alkylsulfonyl, halo-C1-C6-alkylsulfonyl, formyl, C1-C6-alkylcarbonyl, cyano, C1-C6-alkylthio or phenyl, which may be unsubstituted or substituted by halogen, C1-C6-alkyl or halo-C1-C6-alkyl, R13 is hydrogen, C1-C6-alkyl, R14 is C1-C6-alkyl, C1-C8-cycloalkyl or, together with R13 and the nitrogen atom to which they are attached, a saturated or unsaturated heterocyclic five- or six-membered ring which contains one or two heteroatoms selected from the group co

Abstract: For the preparation of pulverulent particle-reduced formulations with the aid of compressed gases, the solid compound to be formulated, a poorly soluble and usually bioactive active compound, is homogeneously ground together with 10-99% by weight (based on the formulation) of a carrier material which is essentially soluble in the compressed gas mixture, in the presence of compressed gas or mixtures thereof in a stirred autoclave having a mechanical grinding device at process temperatures between 10 and 200° C. and at process pressures between 5 and 500 bar, and in a second process stage the compressed gas mixture, usually dimethyl ether, pure propane and/or carbon dioxide, is expanded by lowering the pressure and separated off from the homogenate, which can also be present as a melt.

Abstract: A low water content cleansing composition in toilet bar form is described which includes high levels of emollients having a melting point below 25 C., 12-hydroxystearic acid as a structuring agent, and at least one detersive surfactant. Useful emollients that are liquid at room temperature may include triglycerides, petroleum oil, polyhydric alcohols and silicone oil, and are present in a concentration range of 5 to 60 wt. %. The inventive toilet bars have excellent mush and wear properties.

Abstract: Liquid detergent compositions, are disclosed, comprising a surfactant and a builder mainly comprised of a quaternary ammonium salt of a carboxyl-containing polymer, which has good compatibility with surfactants and is capable of providing excellent detergency, especially, against mud dirt in washing clothes. Detergent compositions, are also disclosed, containing an alkoxylated alcohol nonionic surfactant having a specific distribution constant and narrow molecular weight distribution or an anionic surfactant derived therefrom, together with one or more of a quaternary ammonium or organic amine salt of a carboxyl group-containing polymer, a cationic surfactant and a quaternary ammonium or organic amine salt of a low molecular weight polycarboxylic acid, whereby detergency is synergistically enhanced.

Abstract: A dishwashing cleaning wipe comprising a fabric wherein the fabric is impregnated with a cleaning composition.

Abstract: A process for preparing a free-flowing granular detergent composition with improved storage stability involves granulation of a solid starting material comprising a hydratable salt with a liquid binder and treating the resulting granules in a low shear mixer with from 0.5 to 20 wt % of water.

Abstract: The present invention relates to a method of removing malodor from fabrics; stable, aqueous odor-counteractant composition, preferably for use in the laundry; and articles comprising said composition and instructions for the method and/or benefits to be derived. The composition comprises malodor counteractants such as cyclodextrin, said cyclodextrin being protected from interaction with any other materials that might be present in said composition so as to maintain the cyclodextrin in uncomplexed form and/or, optionally, zeolites, clay, odor blockers, odor reactant such as class I and/or class II aldehydes, essential oil comprising flavanoid, metallic salt, water soluble anionic polymer, etc. to help control odor. Optionally, the composition can also contain low molecular weight polyols, chelating agents, etc. The composition is preferably essentially free of any material that would soil or stain fabric.

Abstract: The present invention relates to softening formulations, and especially fabric softening formulations, which remain clear at relatively low temperatures and at relatively low concentrations of the active fabric softening ingredients. The formulations comprise an active fabric softening composition and an additive corresponding to the formula: R1—Q—(AO)n—R3, where R1 is C1-18 alkyl; Q is O, C(O)0, or NR1; A is CH2CHR2; R2 and R3 are independently at each occurrence H or C1-4alkyl; and n is 2 to 13; with the proviso that at least one R2 is H and at least one R2 is not H. The formulations preferably also contain water and a solvent which can be aliphatic alcohols having 1 to 6 carbon atoms, aryl alkyl alcohols; aliphatic polyalcohols and their alkoxylates, aliphatic ethers, aliphatic esters, or alkylene carbonates and mixtures thereof.

Abstract: Modified ciliary neurotrophic factor, methods for production and methods of use, especially in the treatment of Huntington's disease, obesity, and gestational or non insulin-dependent diabetes mellitus.

Abstract: The present invention is directed to compositions comprising 1-(&bgr;-D-ribofuranosyl)-1H-1,2,4-triazole compounds and either endogenous or exogenous neurotrophic factors. Methods of using such compounds and compositions are also provided. In one aspect, the invention provides methods of using invention compositions and compounds to enhance neurite outgrowth, neuronal survival and neuronal proliferation in mammalian cells. In a preferred embodiment, a 1-(&bgr;-D-ribofuranosyl)1H-1,2,4-triazole compound is infused directly to a desired situs. In a more preferred embodiment the 1-(&bgr;-D-ribofuranosyl)-1,2,4-triazole compound is administered orally. In another aspect, the invention provides methods of treating a neurological disease in a mammal subject. In a further aspect, the invention provides methods of treating neuronal trauma in a mammal subject.

Abstract: The instant invention demonstrates that the 7S domain of type IV collagen disrupts cell aggregation and tissue development. Structural changes in mesoglea, inhibition of cell proliferation, and changes in cell differentiation patterns accompanies the blockage of cell aggregates which indicate that blockage may be due to alterations in mesoglea (extracellular matrix) structure with accompanying effects on cell behavior. Type IV collagen has a critical role in the initial formation of mesoglea and that perturbation of mesoglea formation affects cell division, cell differentiation, and morphogenesis.

Abstract: A method for increasing the synthesis and accumulation of beta-alanylhistidine dipeptides, with a simultaneous increase in the accumulation of creatine, in bodily tissues of humans and animals is described. This is accomplished by causing an increase in the blood plasma concentrations of beta-alanine and creatine, or the blood plasma concentrations of beta-alanine, L-histidine and creatine, by the ingestion or infusion of a composition including beta-alanine, beta-alanine and creatine, or beta-alanine, L-histidine and creatine, or active derivatives thereof.

Abstract: The present invention relates to methods and pharmaceutical preparations for treating or preventing neuronal cell damage in the brain and other tissues in mammals, comprising administering an effective amount of a PACAP, or an agonist, analog or derivative thereof having PACAP neurotrophic activity, in a pharmaceutically acceptable carrier, in a concentration which is effective for protection of neuronal nerve cells in vivo.