Abstract: A safety switch (1, 101) for switching a connection in relation to the status of a device to be monitored. The safety switch (1, 101) utilizes an actuator (2, 102) that that can be inserted into the safety switch (1, 101) from a first side (6, 106) and can be withdrawn from a second side (30, 130). The actuator (2, 102) forms a releasable locking engagement with an actuator receptacle (8, 108) located inside the safety switch (1, 101) to form a signal transfer (14,16). The safety switch (1, 101) also can have an ejector that removes the actuator from the actuator receptacle (8, 108).

Abstract: A mounting unit (1) formed e.g. as a switch block has a downwardly open housing (2) and a base member closing the latter and serving as an actuating element (4) for locking members (9). The actuating element (4) adapted to be urged telescopically into the housing (2) upon insertion into a mounting opening (16) actuates a crank drive for repeatable adjustment of the locking members (9). By strong pressure on the mounting unit (1) one can release the locking members (9) again in simple fashion.

Abstract: There is provided a touch panel for a display device for reducing the whole thickness thereof when the touch panel is attached to the display device, increasing the accuracy of the positional information and improving the display quality and the durability thereof. One resistive layer of a pair of resistive layers disposed opposite to each other across a plurality of insulating dot spacers is laid on a translucent flat plate, and a light conductive plate of a front light unit is integrated with an outer surface side of the translucent flat plate. The translucent flat plate is formed of a PET film in place of a glass plate.

Abstract: A press button switch is constructed to include a seesaw switching mechanism for switching the circuit between on/off positions, a spring-supported press button, and a push member pivoted to the spring-supported press button and controlled by the spring-supported press button to slide along two symmetrical endless sliding tracks and to switch the seesaw switching mechanism between on/off positions.

Abstract: An electric switch has a switch housing, a knob mounted in the housing, a guide gate having latching recesses and arranged inside the switch housing, and a spring-loaded cam follower guided by the guide gate. The switching positions of the switch are defined by interaction of the cam follower with the guide gate and with its latching recesses. The guide gate has damping elements made of elastic material and fitted in the latching recesses.

Abstract: A method is provided for separating particles having different triboelectric propensities. The method utilizes a voltage of less than five volts electrically charge a surface and to reduce the risk of fires and explosions that are associated with particle treatment facilities. The method charges a surface and the surface is used to attract particles. The method does not focus on charging particles. The method also utilizes apparatus in which the electric charge is frictionally produced by a member positioned on the inside of the apparatus.

Abstract: An article sorting system is provided. The system comprises a plurality of inflow lines to convey trays each containing articles to be sorted, a first conveyor to convey the trays introduced from the plurality of inflow lines, a plurality of second conveyors branching off from the first conveyor, a plurality of sorting racks each placed opposite to the second conveyer, each sorting rack having a plurality of slots leading to containers into which articles are placed from the trays according to sorting categories by sorters, a plurality of first delivery conveyors each placed opposite to the sorting rack, each first delivery conveyor conveying the containers pushed thereon from the sorting rack, and a second delivery conveyor to convey the containers from the plurality of first delivery conveyors to a shipment area.

Abstract: A gas insulated switchgear capable of performing maintenance and inspection of a breaker without shutting down a bus line includes a first case containing a breaker and having a bushing for leading a load and a second case containing a plurality of disconnectors and having a plurality of bushings for leading a plurality of bus lines to be connected to the disconnectors. The first case and the second case are connected to each other through a gas partition spacer.

Abstract: A perforated electrode has strategically distributed flushing holes through which a flushing medium is discharged. The electrode can be used for either electrochemical machining (ECM) or electrodischarge machining (EDM). The flushing medium is either electrolyte in ECM or a dielectric fluid in EDM. It is discharged from the tool electrode directly against the workpiece surface or surfaces which are undergoing material removal. This removes heat and sludge or debris.

Abstract: It is an object of the present invention to provide a quartz glass jig excellent in the plasma etching resistant characteristics, which does not generate an abnormal etching and particles when used for a plasma generating apparatus. The above Object is obtained by a plasma resistant quartz glass jig that is used for an apparatus of generating plasma, wherein the surface roughness Ra of the quartz glass surface is in a range of from 5 &mgr;m to 0.05 &mgr;m, the number of microcracks of the surface is not more than 500 microcracks/cm2, and the hydrogen molecule concentration in the quartz glass is at least 5×1016 molecules/cm3.

Abstract: An ion fusion formation (IFF) system uses a plasma welding torch to create ions that heat feedstock for application at a deposition point. A plasma welding torch may use argon gas or the like in order to provide extremely hot ions that impact or collide with the feedstock in order to melt it and enabling application of the melted feedstock to a deposition point on a workpiece. By positioning the workpiece, wire feeder, and/or welding torch, parts, devices, or components can be built in almost any three-dimensional shape. Parts can be manufactured in a “just-in-time fashion” with high precision and predictable performance.

Abstract: A solder reflow system is disclosed that includes a substrate, a solder pad disposed upon the substrate, an optical component disposed upon the solder pad, and a laser positioned above the substrate with laser output focused sufficiently close to the solder pad to reflow the solder when the laser is powered. Also disclosed is a method for reflowing a solder joint, including: providing an optical component assembly including a substrate, a solder pad disposed upon the substrate, solder disposed upon the solder pad, and an optical component disposed upon the solder pad; providing a laser; positioning the laser above the substrate with laser output focused sufficiently close to the solder pad, instead of directly over the solder pad; and powering the laser, thereby transferring energy through the substrate into the solder pad, and reflowing the solder.

Abstract: A laser marking apparatus and method having an energy source which is not substantially transmissible through the substrate of a semiconductor chip, or the substrate of the semiconductor chip is substantially opaque to the energy source for marking the surface of a semiconductor chip, are described herein.

Abstract: A laser beam machining apparatus forms blind holes at predetermined intervals in a workpiece by intermittently irradiating a laser beam from a laser nozzle to the workpiece while the laser nozzle and the workpiece being moved relatively. During the time the workpiece is subjected to machining, the electrostatic capacity between the support member and the laser nozzle is detected by an electrostatic capacity sensor while the workpiece made of conductive material is supported on the support member. The irradiation output power is controlled by a control unit which operates to vary the number of output pulses from the laser nozzle each time one hole is formed according to the result detected in response to variation in the thickness of the workpiece.

Abstract: In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not smaller than 70% with respect to the laser beam. An absorbing substrate is arranged at a position before the laser beam is irradiated onto the mask. The absorbing substrate is for locally absorbing the laser beam and is for absorbing a reflected beam which is reflected by the reflecting surface of the mask when the laser beam is irradiated onto the reflecting surface of the mask.

Abstract: A nozzle system for laser machining capable of maintaining an interference region of a robot in a teaching operation to be substantially the same as that in a laser machining operation. An optical fiber supporting unit is attached to a nozzle body unit having laser beam converging lens for performing a laser machining operation. An optical fiber for supplying a laser beam is connected to an optical fiber connector on the optical fiber supporting unit. A laser machining is performed by combination of the nozzle body unit and the optical fiber supporting member attached to a distal end of a robot arm. In a teaching operation, a camera supporting unit (dummy nozzle) having substantially the same dimension as the nozzle body unit and supporting a camera at a predetermined position is used in place of the optical fiber supporting unit and the nozzle body unit.

Abstract: Disclosed is an apparatus for heating a target substrate by means of light irradiation. The heating apparatus includes a substrate support section for supporting the target substrate, an irradiating light generating section for irradiating the light irradiating regions of the target substrate supported by the substrate support section, and a light irradiating region changing section for changing the light irradiating regions of the target substrate irradiated with the light generated from the irradiating light generation section.

Abstract: In the power supply control circuit, interposed between the power lines 1a and 1b is a serial circuit 21 constructed by connecting in series a radio interference suppression capacitor 2 for suppressing radio interference and a power supply holding switch 4. A node of the radio interference suppression capacitor 2 and the power supply holding switch 4 is connected via an auxiliary power line 1d to a primary side terminal 7a of a stepdown transformer 7, and another primary side terminal 7b of the stepdown transformer 7 is connected to a power line 1b. With the power supply control circuit, reduction of electric power consumption can be realized using a power supply holding switch with a small capacity.

Abstract: A piping system that includes a plurality of pipe made of thermoplastic material, a coupling and an arrangement for securing the pipe to the coupling. The coupling is configured so that either a fusable seal or mechanical seal can be used with the coupling to connect the pipe to the coupling with an electrofusion joining control device. Preferably, the pipe and coupling are made of thermoplastic material.

Abstract: A mineral insulated heating cable comprising two electrical conductors extending along the lengths of the cable and an array of heating elements distributed along the length of the cable and connected in parallel between the conductors. The heating cable is encased in a metal jacket which waterproofs the overall assembly, the jacket being electrically insulated from both the conductors and the heating elements by for example mica or glass fiber tape sheaths. The metal jacket is extruded directly onto the heating cable, or is extruded around and then drawn down onto the heating cable. Thus the structure can withstand high temperatures and yet is waterproof given the provision of the metal jacket.

Abstract: A shrinkage device for rapidly shrinking and outshrinking tools, especially hard metal tools, in so-called shrinkage tension chucks using an induction heating coil, wherein a plurality of shrinkage chucks of paramagnetic or ferromagnetic materials can be positioned on a turntable and brought from a position below the induction coil, which can be lowered, into a cooling position.

Abstract: A microwave delivery system for a cooking appliance includes an electronic control unit and a plurality of magnetrons arranged in a spaced relationship for the introduction of various energy fields into an oven cavity. The electronic control unit creates a phase angle shift between each of the microwave energy fields such that a constructive standing wave propagates about the oven cavity. In this manner, localized hot and cold spots, which can detrimentally affect cooking efficiency, are eliminated without the need for mode stirring or turntables. With this system, the total energy delivered to the oven cavity is the combined energy level of the various microwave energy fields.

Abstract: An electrical-supply-free MOS integrated circuit is described. The circuit comprises: a first semiconductor device having a first current terminal, a first input voltage terminal, and a first common terminal, said semiconductor device having a voltage between said first input voltage terminal and said first common terminal that controls a current flow leaving said first current terminal; and a first opto-electronic device having a first anode connected to said first current terminal and a first cathode connected to a ground to convert an input of incident light into an electrical signal, said first opto-electronic device having photodiode and photovoltaic cell capabilities; wherein a voltage is set between a node of said first current terminal and said first common terminal. The principle of the circuit operation can be used for developing optically controlled electrical-supply-free very large scale integrated circuits (VLSI) at low-cost.

Abstract: A coupling system allows interconnection of multiple light curtains segments but prevents interconnecting dissimilar segment types. A first connector half mounts to a segment while a second connector half mounts to another segment, such that mating the two halves interconnects the two segments. The two mating sections of the connector or coupling system may be formed as matched mating blocks that are mounted in different orientations, depending upon whether they are attached to transmitter or receiver type light curtain segments. One or both mating sections may rotatably mount to its respective segment, thereby providing an articulated connection between the joined segments. In other implementation, one mating section may be formed as a reversible coupler, with the other mating section formed as a mating receptacle that may be conveniently keyed to accept only a particular orientation of coupler.

Abstract: An interleaver employs two birefringent crystals with opposite behavior under temperature variations and chromatic dispersion to achieve temperature stability and to compensate for chromatic dispersion. The interleaver employs a third birefringent crystal made of a birefringent material different from the materials of the other two crystals so that the wavelength components of radiation passing through the interleaver conform to the predetermined International Telecommunications Union grid. One of the three birefringent crystals includes a Faraday rotator placed in a magnetic field. By changing the direction of the magnetic field relative to the optical paths of beams passing through the interleaver, the behavior of the interleaver can be fine tuned to achieve temperature stability and chromatic dispersion compensation in a way that does not require very accurate dimension control of the three crystals.

Abstract: There is disclosed an apparatus in which when a surface having a curved portion, for example, a tire surface is visually inspected, light is uniformly illuminated on the surface. In this apparatus, an image pickup operation is performed by a CCD for a region to be visually inspected, which is illuminated by turning on LEDs. Based on the image pickup result, a density distribution of the region to be visually inspected is prepared. A difference between a target light quantity and light quantity, which is obtained for each field angle of the density distribution at which the region to be visually inspected is illuminated by each light source unit, is calculated and corrected. This correction allows the quantity of light reflected from the region to be visually inspected on the inner peripheral surface to become uniform.

Abstract: Fibre optic apparatus for accurate and repeatable measurements of light comprising one or more wavelength ranges, and system employing the apparatus. The apparatus according to the invention comprises: a directional coupler adapted to lead the light into an optical fibre, said optical fibre containing at least one analysis filter for each wavelength range, said analysis filters consisting of at least one fibre-optical Bragg-grating (FBG) which reflects incident light with a chosen wavelength back through said directional coupler and onto a detector having an associated signal processing unit, a modulator device for pulsing the incident light with a chosen pulse width, and an optical fibre delay line in front of each analysis filter, with a length adapted to provide for a sufficient time delay larger than the pulse width, so that the pulses reflected from each analysis filter at different wavelengths can be separated in time and thereby be demodulated in the signal processing unit.

Abstract: An atomic beam control apparatus controls a position of an atomic beam that passes through a multi-pole magnetic field by irradiating the atomic beam with a light beam. The apparatus includes a probe light generator to generate probe light to detect a position of the atomic beam, a light sensor to receive the probe light, and a current control section to control a current flowing in multi-pole magnetic field generating electrodes controlling the position of the atomic beam. The light beam irradiates the atomic beam so that the atomic beam interacts with both the light beam and the magnetic field, and the position of the atomic beam is controlled by controlling currents fed to the multiple-pole magnetic field generating electrodes based on output values of the light sensor receiving the probe light.

Abstract: A semiconductor calibration wafer that has no charge effect is disclosed. The calibration wafer has a substrate layer and a conductive metal layer. The conductive metal layer completely covers the substrate layer, and has a critical dimension (CD) bar corresponding to a desired CD. The substrate layer may be an oxide layer or another type of substrate layer, whereas the conductive metal layer may be an aluminum layer, a copper layer, or another type of conductive metal layer. Where the calibration wafer is used in conjunction with a scanning electron microscope (SEM) to monitor the CD, the electrons ejected by the SEM do not remain on the semiconductor calibration wafer, but instead are carried away via the conductive metal layer. The calibration wafer is thus not vulnerable to the charge effect.

Abstract: A method and apparatus are provided for providing an ion transmission device or interface between an ion source and a spectrometer. The ion transmission device can include a multipole rod set and includes a damping gas, to damp spatial and energy spreads of ions generated by a pulsed ion source. The multipole rod set has the effect of guiding the ions along an ion path, so that they can be directed into the inlet of a mass spectrometer. The invention has particular application to MALDI (matrix-assisted laser desorption/ionization) ion sources, which produce a small supersonic jet of matrix molecules and ions, which is substantially non-directional, and can have ions travelling in all available directions from the source and having a wide range of energy spreads.

Abstract: A summed TOFMS having a filter for identifying detector outputs that are likely the result of noise rather than ions striking the ion detector. The TOFMS stores a plurality of data values at locations specified by a register that counts clock pulses. The filter receives the ion measurements from the ion detector and generates an output measurement value corresponding to each ion measurement. The filter sets the output measurement value to a predetermined baseline value if the filter determines that the ion measurement is noise, otherwise the filter sets the output measurement value to the ion measurement. An adder, responsive to the clock signal, forms the sum of the data value specified by the register value and the output measurement value and stores the sum in the memory at the location corresponding to the register value.

Abstract: Disclosed is an invention that provides a system and process for focusing light to micron and submicron spot sizes for matrix assisted laser desorption/ionization (MALDI). Moreover, the present invention features a second process and system for creating a correlated optical image of the ion desorption region of a sample substrate.

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

Abstract: A water detecting apparatus includes a source of infra-red radiation which is reflected off an inner surface of a pipe wall onto a mirror directing the infra-red signal along a path to an infra-red detector connected by an electrical signal path to an electronic control. The path is interrupted by a rotating chopper having windows occupied by two optical filters. The first optical filter only passes an infra-red signal of wavelength 1900 nm which is absorbed by water, while the second optical filter only passes an infra-red signal of wavelength 2200 nm, another wavelength absorbed by water, but not to the same extent as the 1900 nm wavelength. The 2200 nm wavelength serves as a reference signal.

Abstract: A fusion device consisting of two colliding ion beams, each produced by a high power, femtosecond regime, chirped pulsed amplification (CPA) laser acceleration device. The CPA laser creates an ionized plasma and subsequently accelerates electrons to multi-MeV energies, thus creating electric fields due to separation of electrons and ions, of sufficient magnitude to accelerate the plasma ions to energies ranging from multi-keV to multi-MeV levels. The magnetic fields created by the laser pulses, as well as the electrons and/or ions, also helps confine the ions to the region of the size of the laser beam focal spot diameter, and thus enhance the collision probability of the counter-streaming ions and provide a sizable population of fusion events. Ion beam generation by high powered, short pulse CPA lasers has been previously demonstrated in thin foil targets.

Abstract: Methods and apparatus are disclosed for performing charged-particle-beam (CPB) microlithography, in which methods and apparatus certain position-measurement marks are detected by appropriate deflections of a charged particle beam. The deflections are performed using a primary deflector and a mark-scanning deflector. For example, the beam is deflected by the primary deflector to illuminate a position-measurement mark on the reticle and a corresponding position-measurement mark on the substrate. The position-measurement mark on the substrate is scanned by minute deflections of the beam as performed by the mark-scanning deflector. Meanwhile, charged particles backscattered from the position-measurement mark on the substrate (as the mark is being scanned) are captured and detected by a detector. The marks are detected at timing moments during normal operation of the primary deflector.

Abstract: The present invention relates to a product irradiator having a cartridge loading system. The cartridge comprises a plurality of carriers or totes which are transported as a single mass into an irradiation chamber for radiation processing. Products contained within the totes are irradiated while on the cartridge, but individual totes are transferred around the radioactive source by a tote transfer system. The cartridge product irradiator permits quick changes of cartridges thereby minimizing the time that the radioactive source is not in use, and also permits good radiation dose uniformity in products. The cartridge product irradiator is thus highly efficient and economical to use.

Abstract: The frequency of light source malfunctions is reduced and inconsistencies in exposure are controlled in a readout exposure apparatus for reading out radiation image data recorded as an electrostatic image on an image detecting device. The readout exposure device includes a light source having a plurality of LED chips, a first optical element for improving the quality of the light output, and a second optical element for focusing the light passing through the first optical element on the face of the image detecting device through two cylindrical lenses. The light output from each LED chip is focused in the direction perpendicular to the lengthwise direction of the light source. By irradiation of the image detecting device by the light not focused along the lengthwise direction of the light source, a plurality of pixels are simultaneously exposed by the light emitted from each light emitting point.

Abstract: The present invention relates to a test structure and a method for forming a test structure over a semiconductor substrate. The test structure comprises a plurality of patterned electrically conductive metal layers within a scribe line. The plurality of metal layers further comprises one or more lower metal layers comprising a plurality of split pads longitudinally spaced along the length of the scribe line, wherein a channel traversing the length of the scribe line is define. One or more top metal layers comprising a plurality of solid pads generally residing over the split pads defines a plurality of columns of pads. One or more conduits generally residing within the channel are associated with one or more lower metal layers and connect two or more split pads associated with the respective one or more lower metal layers, wherein a bow-tie lead is defined.

Abstract: A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250° C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Abstract: An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode, is formed on a portion of the surface of said semiconductor layer, and a gate insulated film is disposed between said gate electrode and said semiconductor layer. A non-single-crystalline channel region is defined within said semiconductor layer just below said gate, electrode. A source region and a drain region are transformed from and defined within said semiconductor layer immediately adjacent to said channel region in an opposed relation, said source and drain regions being crystallized to a higher degree than that of said channel region by selectively irradiating portions of said semiconductor layer using said gate electrode as a mask.

Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

Abstract: This invention provides a liquid crystal display device having high display quality by preventing rays of light diffracted at an end part of a light shielding layer because such rays are irradiated to a semiconductor layer and invite fluctuation of TFT characteristics. To completely cut off the rays of light 117 diffracted at an end part of a third light shielding layer 108, a gate electrode 104 and a second light shielding portion 106 cover a semiconductor layer 103. In consequence, the irradiation of the rays of diffracted light can be prevented, fluctuation of TFT characteristics can be avoided and satisfactory display images can be acquired.

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract: After a light-emitting element exhibiting an emission peak wavelength in a wavelength range of not longer than 500 nm is mounted into a cup-like portion of a base member, the cup-like portion is filled with epoxy group-containing silicone rubber. An aromatic polyamide-based resin is used as a reflector material.

Abstract: An optoelectronic apparatus includes an optoelectronic device, a mounting portion, a frame member surrounding a periphery of the mounting portion, and an optical component. The optical component is placed on an optical component placement portion. The frame member includes a pair of first side walls and a pair of second side walls. Each of the pair of second side walls has a recessed portion and a protruded portion. The optical component is disposed between the protruded portions, and is fixed with an adhesive filled in the recessed portions.

Abstract: A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor, layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductur substrate is employed.

Abstract: An ESD protective transistor comprises a heavily doped p-type base region which is arranged in a lightly doped p-well and which is provided with a first terminal. Furthermore, a heavily doped n-type emitter region is arranged in the lightly doped p-well. A heavily doped n-type collector region is separated from the lightly doped p-well through a lightly doped n-type region and is provided with a second terminal. The heavily doped n-type emitter region is not short-circuited with the heavily doped base region viy a common electrode and is of floating design. The doping types of the respective regions may be reversed.

Abstract: Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting the collector (5) under the base (7) along two parallel sides of the base mesa (7—FIG. 4), and providing a sloped collector edge (5—FIG. 6) along the remaining two parallel sides of the base. The foregoing is accomplished by selective etching and with the four sides of the mesa regions oriented as a non-rectangular parallelogram (7, 9—FIG. 4) in which one pair of sides is in parallel with one of the said [0 0 1] and [0 0 {overscore (1)}] planes of the crystalline structure and the other pair of sides in parallel with one of the [0 1 1] and [0 {overscore (1)} {overscore (1)}] planes of the crystalline structure.

Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).