Abstract: A multi-axis laser scanner and receiver capable of providing laser scanning in multiple fields of view using a microscanner and a fold mirror with a patterned aperture. The fold mirror has a transmissive central region and a periphery that is reflective. Such scanners can be employed in a helicopter to scan in the forward field of view for obstacle detection, and in an upward field of view for air data measurements. Additional fields of view can be added, for example, to provide downward scans to detect height above terrain and ground speed.

Abstract: Optical detector with pulsed emission, particularly of the background suppression cell type, with means for rapid regulation of the emission current. When the voltage signal received V is located outside a regulation interval Z1, the emission current is multiplied or divided by a predetermined factor to bring the signal V rapidly within the interval Z1; when the signal V is within the interval Z1, the emission current is regulated by control means to attain a value corresponding to the adjustment of the signal V to a required value Vopt.

Abstract: A chemical sensing system and method. The system (10) includes a transmitter having a laser for providing a collimated beam of electromagnetic energy at a first frequency and a Q switch in optical alignment with the beam. The system further includes a crystal for shifting the frequency of the beam from the first frequency to a second frequency. A mechanism is included for shifting the beam from the second frequency to a third frequency in the range of 8-12 microns. The system includes a mechanism for switching the polarization state of the second beam and providing third and fourth beams therefrom. The third beam has a first polarization and the fourth beam has a second polarization. The second polarization is orthogonal relative to the first polarization. The frequency shifted third and fourth beams are combined to provide an output beam in the range of 8-12 microns. The output beam is transmitted and a return signal is detected by a receiver in the illustrative chemical sensing application.

Abstract: A fiber optic conversion method is provided that includes receiving a first electrical signal. A second electrical signal is received. The first and second electrical signals are compared. A float signal is generated when the first and second electrical signals comprise substantially a same electrical signal. A determination is made regarding whether optical signals are being received. A light signal is generated while optical signals are being received. A driver mode is entered in response to the float signal and the light signal being generated simultaneously. The driver mode is remained in while the light signal is being generated.

Abstract: A roll arming sensor is provided for determining an arming signal for use on a vehicle for rollover detection. The roll arming sensor includes a light source for generating a light beam and a receiver for detecting the light beam. Disposed substantially horizontal between the light source and receiver are first and second cylindrical members, both oriented substantially parallel to the longitudinal axis of the vehicle. The first and second cylindrical members each have a window extending therethrough for passing the light beam during normal vehicle travel. Each of the first and second cylindrical members are movable to a second position upon experiencing an armed condition, such as a roll event, to prevent the optical beam from passing to the receiver, thereby generating an arming signal for use with a rollover sensor.

Abstract: An optical track sensing device, and in particular to an optical sensor for detecting optical tracking information on a moving medium (or stationary medium and moving sensor). The sensing device relies on self-imaging, rather than optics, and obtains a very acceptable detected signal at other than the self imaging plane of the reflection off a moving medium. This provides more flexibility in the placement of the sensor, while still allowing the elimination of optical components by relying on self-imaging instead. In addition, by providing a pattern over the photodetector with a smaller period, higher frequency harmonics are detected, allowing more precise detection of the position of the medium. In one embodiment, the period of the detector pattern is selected to detect the higher harmonics of the grating on the moving medium.

Abstract: A self contained sensing apparatus includes a housing establishing an interior compartment, the housing having a maximum thickness which is less than the size of a gate opening of a semiconductor wafer processing chamber for inserting the housing into the semiconductor wafer processing chamber for sensing a parameter. The housing includes a window extending through a principal housing surface. A sensor is provided within the housing and generally aligned with the window for sensing at least one parameter. A transmitter is provided within the housing and coupled with the sensor for receiving signals representative of the sensed parameter and transmitting the signals out of the housing.

Abstract: A method and apparatus reduces storage requirements for identifying a sequence of elements in a compound. The storage reduction receives a set of monoisotopic masses designed to address entries from two or more mass spectroscopy data sets according to a fitness function, analyzes the fitness function configured to facilitate identification of a sequence of elements in the compound, determines a minimum address range for addressing entries in each of the two or more mass spectroscopy data sets according to sequence of elements and fitness function analysis and reduces the size of at least one of the two or more mass spectroscopy data sets to selected mass data values according to the minimum address range.

Abstract: The invention relates to a time-of-flight mass spectrometer for acquiring spectra of either primary or daughter ions with high mass precision. All the periodic voltage pulse sequences used in the mass spectrometer—in the ion source, and any precursor ion selector or post-acceleration unit—are run continuously at a fixed base frequency, independently of whether a spectrum is being acquired in the relevant period, in order to avoid any disturbance of the electrical and thermal equilibrium. Ignition delay of the laser after triggering is controlled by switching the output of the clock pulse. The voltage pulse sequences, moreover—once again to avoid settling times—are to be designed in such a way that their voltages and delay times are entirely independent of the mass of the precursor ions. This feature can be achieved through appropriate forming of the delayed ion acceleration voltage pulse.

Abstract: An environmental sampler is configured to deliver a pre-determined volume of external environmental sample and internal standard sample to the mass spectrometer on each cycle of advancing and retracting movement of a sampler rod under control of a stepper motor. This allows the external environmental sample to be accurately analyzed for its trace contents against a known, standard sample in the same sample period, thereby providing a real-time calibration of the analysis results in each sample period. The samples arc taken in precise, pre-determined volumes through two sets of machined grooves formed on the surface of the sampler rod. The sets of machined grooves deliver the samples to the mass spectrometer through alignment with a vacuum channel to an outlet port which is scaled off from the external environment and an internal standard sample reservoir.

Abstract: A microchip-based electrospray device, system, and method of fabrication thereof are disclosed. The electrospray device includes a substrate defining a channel between an entrance orifice on an injection surface and an exit orifice on an ejection surface, a nozzle defined by a portion recessed from the ejection surface surrounding the exit orifice, and an electric field generating source for application of an electric potential to the substrate to optimize and generate an electrospray. A method and system are disclosed to generate multiple electrospray plumes from a single fluid stream that provides an ion intensity as measured by a mass spectrometer that is approximately proportional to the number of electrospray plumes formed for analytes contained within the fluid. A plurality of electrospray nozzle devices can be used in the form of an array of miniaturized nozzles for the purpose of generating multiple electrospray plumes from multiple nozzles for the same fluid stream.

Abstract: A device for manipulating ions which includes a perforated folder of electrically conducted material, a first electrode fixed to the holder and a second electrode extending parallel to the first electrode and spaced from the first electrode and holder. The second electrode is connected to the holder through a rigid support of electrically insulated material.

Abstract: A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.

Abstract: A radiation camera system, comprising: a freely positionable radiation camera; a spatial coordinate determining system that determines the coordinates of the camera; and a receiver which receives the spatial coordinate information and imaging information, generated by the camera and provides imaging information referenced to a coordinate system not fixed in the camera.

Abstract: A system and method for remote emissions detection that uses a composite beam of ultraviolet (UV) and infrared (IR) radiation. The composite beam is used to perform spectroscopic measurements on an emissions source plume. The composite beam is not split during detection, and may, among other things, be used to detect NOx in the emissions plume.

Abstract: An optical system for a gas component analysis includes an emitter for emitting first light beam having a first spectrum, a second emitter for emitting a second light beam at a second spectrum, a first receiver for receiving the first light beam, and a second receiver for receiving the second light beam.

Abstract: An invention is described, which uses terahertz radiation for chemical sensing and gas analysis. Relatively narrow-band THz radiation is generated by impinging an optical pulse train from a short-pulse laser source on a THz emitter. Coherent detection of the resulting THz radiation is accomplished by using a similar optical pulse train to activate the THz sensor. The invention is shown to detect and indicate various concentrations of water vapor in air. Optimal phase biasing conditions give maximum sensitivity to variations in concentration of the species under investigation.

Abstract: Offset arrangement for an infrared detector array, which continuously adjusts the offset in a recursive process. With the aid of a displacement device the image observed by the detector array is continuously shifted over a small distance, the apparent intensity changes arising for a pixel being used for adjusting the offset.

Abstract: A nuclear camera system includes a detector (12) for receiving radiation from a subject (14) in an exam region (16). The detector (12) includes a scintillation crystal (20) that converts radiation events into flashes of light. An array of sensors (22) is arranged to receive the light flashes from the scintillation crystal (20). Each of the photomultiplier sensors (22) generates a respective sensor output value in response to each received light flash. A processor (26) determines when each of the radiation events is detected. At least one of an initial position and an energy of each of the detected radiation events is determined in accordance with respective distances (d1 . . . d19) from a position of the detected event to the sensors (22). An image representation is generated from the initial positions and energies.

Abstract: A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident, is characterized in that the region for detection and charge accumulation/transfer comprises a plurality of transfer electrodes formed in each pixel, and an excess charge removing means arranged in correspondence with one of the transfer electrodes in each pixel.

Abstract: The invention provides a direct conversion flat panel X-ray detector with automatic cancellation of ghost images due to charge trapping. The detector includes a direct X-ray to charge converter, a readout thin film transistor array supported by a glass substrate and on the rear side of the glass substrate, a layer of luminophor which automatically and instantly suppresses the ghosting effect.

Abstract: Servocontrol is achieved on a radiation detector that controls a motor (7) that makes a rod (9) slide, tilting a mobile portion (12) of an absorbing enclosure (2) to open or close a collimation slit (3) and adjust the amount of radiation received by the detection solid (1) to an ideal value for measurement precision. This device can be used particularly in gamma spectrometry.

Abstract: An aberration corrector comprises four stages of electrostatic quadrupole elements, two stages of electrostatic quadrupole elements for superimposing a magnetic potential distribution analogous to the electric potential distribution created by the two central ones of the four stages of the electrostatic quadrupole elements on the electric potential distribution, an objective lens, a manual operation portion permitting a user to modify the accelerating voltage or the working distance, a power supply for supplying voltages to the four stages of electrostatic quadrupole elements, a power supply for exciting the two stages of magnetic quadrupole elements, a power supply for the objective lens, and a control portion for controlling the power supplies according to a manual operation or setting performed on the manual operation portion.

Abstract: A Faraday system for measuring ion beam current in an ion implanter or other ion beam treatment system includes a Faraday cup body defining a chamber which has an entrance aperture for receiving an ion beam, a suppression electrode positioned in proximity to the entrance aperture to produce electric fields for inhibiting escape of electrons from the chamber, and a magnet assembly positioned to produce magnetic fields for inhibiting escape of electrons from the chamber. The chamber may have a relatively small ratio of chamber depth to entrance aperture width.

Abstract: A window allows the introduction of radiation energy into an annular processing chamber filled with a material to be processed. The chamber is formed from coaxial cylinder members rapidly rotating relative to one another. The chamber can be thin enough so that it is short compared to the penetration depth of the radiation through the material, providing even exposure of the material to the radiation. Also, eddies created in the material by the relative rotation enhances the even exposure. When the material inside the annular processing chamber is opaque, resulting in an insignificant penetration depth, the eddies still insure that the material is evenly exposed to the irradiation.

Abstract: A reaction frame having a first reaction frame portion and a second reaction frame portion receives reaction forces from a stage. First reaction frame portion is coupled to ground by a ground rod aligned along the longitudinal side of the first reaction frame portion; second reaction frame portion of the reaction frame is coupled to an interconnect rod passing parallel to the plane defined by the first reaction frame portion and second reaction frame portion. Ends of interconnect rod have a damper therebetween. One end is coupled to the first reaction frame portion while the other end is coupled to the second reaction frame portion. Reaction forces in received by the second reaction frame portion are transferred to ground through the interconnect rod and the first reaction frame portion. Alternately, the interconnect rod does not use the damper when alligned with the ground rod.

Abstract: An electron beam lithography apparatus has a first chamber for holding a workpiece with the first chamber having an outer wall with an opening therein. A second chamber has an electron beam column mounted therein, with the second chamber positioned adjacent the first chamber and having an outer wall having a portion in common with the portion of the outer wall of the first chamber containing the opening. An electron beam column in the second chamber includes an aperture and generates an electron beam through the aperture and the opening at the workpiece. The apparatus includes a first pump for creating a vacuum in the first chamber, a second pump for creating a vacuum in the second chamber, a first vent for permitting gas to enter the first chamber for increasing the pressure in the first chamber, and a second vent for permitting gas to enter the second chamber for increasing the pressure in the second chamber.

Abstract: An electron beam lithography system includes a laser for generating a laser beam, and a beam splitter for splitting the laser beam into a plurality of light beams. The intensity of the light beams is individually modulated. The light beams are of sufficient energy such that, when they impinge on a photocathode, electrons are emitted. Modulation of the light beams controls modulation of the resulting electron beams. The electron beams are provided to an electron column for focusing and scanning control. Finally, the electron beams are used to write a scanning surface, for example, using an interlaced writing strategy.

Abstract: The present invention relates to an electron beam-irradiating reaction apparatus for irradiating a desired object to be treated, such as an exhaust gas, with an electron beam. Conventionally, a scanning tube of an electron beam irradiation device and a reaction device-for receiving the electron beam are rigidly connected. Therefore, excessive stress is applied to a connecting portion between the scanning tube and the reaction device and not only leakage of gas from the connecting portion, but also breakage of a metal window foil provided at an end portion of the scanning tube are likely to occur. In the present invention, to solve such problems, a flexible hermetic sealing member 23 is provided between a portion around the end portion of the scanning tube 12 and a peripheral edge 18a of an electron beam receiving window in a side wall of an electron beam reaction device 18.

Abstract: A method for the elimination of high-energy ion in an EUV light-radiating device includes irradiating a first target with a first exciting laser to produce a laser-produced plasma EUV light source and causing a high-energy ion generated simultaneously with EUV light to collide against plasma produced by irradiating a second target with a second laser to separate the high-energy ion from the orbit of the EUV light. An apparatus for the elimination of a high-energy ion in an EUV light-radiating device includes a device for irradiating a first target with a first exciting laser to produce a plasma EUV light source and induce emission of EUV light, a device for irradiating a second target with a second laser to produce plasma, and a device for causing a high-energy ion generated simultaneously with the EUV light to be delayed by difference between an ion flight time and plasma expansion time for ion elimination and collide against the plasma to separate the high-energy ion from the orbit of the EUV light.

Abstract: When performing a defect inspection of a wafer W, defect observation equipment 3 first inputs defect position data from defect detection equipment 2. After a plurality of measurement points are set, the amount of position shift between the detection coordinate system and the observation coordinate system is measured for each measurement point. Then, the defect observation equipment 3 creates a first-order defect position correction formula in order to make reasonable the defect position in the detection coordinate system, based on the position shift amounts of the measurement points. This first-order defect position correction formula has three terms, for the offset component, the magnification component, and the rotation component of the observation coordinate system with respect to the detection coordinate system. Next, using the defect position correction formula, a defect position detected by the defect detection equipment 2 is corrected.

Abstract: In a solid state radiation detector provided with a sub stripe electrode, an S/N ratio is improved. In an electrostatic recording medium, a first current detection circuit is connected to each line electrode of a stripe electrode and a second current detection circuit is connected to each line electrode of a sub stripe electrode. Upon retrieving an electrostatic latent image, electric currents flowing on the respective line electrodes are detected. In addition, signal synthesizing means synthesizes a signal detected by the first current detection circuit and a signal inverted from a signal detected by the second current detection circuit.

Abstract: Stimulating rays are linearly irradiated onto an area of a stimulable phosphor sheet, and light emitted by the sheet is detected with a CCD line sensor comprising photoelectric converting sections arrayed along the linear area of the sheet exposed to the linear stimulating rays. Accumulated electric charges obtained from each set of n number of the photoelectric converting sections adjacent to one another are read together. The accumulated electric charges, which have thus been read together from the set of the photoelectric converting sections, are taken as an image signal component corresponding to one pixel. The value of n is set in accordance with image recording information and/or diagnostic information.

Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography. In accordance with one embodiment of the invention, there is provided a semiconductor structure including a planarized relaxed Si1−xGex layer on a substrate; and a device heterostructure deposited on said planarized relaxed Si1−xGex layer including at least one strained layer.

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

Abstract: A solid state imager is provided that comprises an imaging array of gated photodiodes. The imager comprises a plurality of photosensor pixels arranged in a pixel array, and each of the photosensor pixels includes a photodiode having a sidewall, the sidewall having a gate dielectric layer disposed thereon, and a field plate disposed around the photodiode body. The field plate comprises amorphous silicon disposed on the gate dielectric layer and extends substantially completely around the sidewall of said photodiode. The field plate is electrically coupled to the common electrode of the imaging array so that the field plate creates an electric field around the photodiode body in correspondence with the potential of said common electrode. A method of fabricating the gated photodiode array is also provided.

Abstract: A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate 10. The thin film transistor includes first gate electrodes 11, a gate insulating film 12, a semiconductor film 13 which is formed on the first gate electrode 11, and a interlayer insulating film 15. The thin film transistor further includes second gate electrodes 70 which are on the interlayer insulating film 15 and at least above channels 13c, and which are connected to the first gate electrodes 11. A reflective display electrode 19 connected to the source of the thin film transistor is elongated to extend above the thin film transistor.

Abstract: A semiconductor device in which a reduction in size and thinness are realized is provided. The semiconductor device of the present invention can realize a reduction in size by forming light emitting elements as a light source, and photodiodes as photoelectric conversion elements on the same substrate. Further, it becomes possible to control two signal lines by using one driver circuit with using an output switching circuit. As a result, it becomes possible to reduce the area occupied by the driver circuits of the semiconductor device, and the semiconductor device can be made smaller.

Abstract: A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

Abstract: A hybrid semiconductor circuit adjustable by a control current for controlling voltage comprising a single high-voltage reversely polarized diode surrounded by at least two diodes emitting infrared radiation fed in series by the control signal and arranged to allow optical interaction with the high-voltage diode, wherein the diodes are encapsulated with a coating resin having a high transmission rate in an infrared domain.

Abstract: A method and apparatus are provided for providing an electro-optic interface for exchanging information signals. The method includes the steps of disposing an optical array adjacent a first side of an optically transparent substrate, such that a plurality of transmission paths of the optical array pass directly through the substrate, applying an optically transparent underfill between the substrate and adjacent optical array with the plurality of transmission paths of the optical array passing directly through the underfill and coupling a plurality of optical signals of the optical array through the optically transparent underfill and optically transparent substrate between the optical array and an optical connector.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).

Abstract: A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

Abstract: A semiconductor device having an MODFET and at least one other device formed on one identical semiconductor substrate, in which an intrinsic region for the MODFET is formed by selective growth in a groove formed on a semiconductor substrate having an insulation film on the side wall of the groove, and single-crystal silicon at the bottom of the groove, is disclosed. The step between the MODFET and the at least one other device mounted together on one identical substrate can be thereby decreased, and each of the devices can be reduced in the size and integrated to a high degree, and the interconnection length can be shortened to reduce power consumption.

Abstract: A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.

Abstract: A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone (20) between a first (21, 23, 31a) and second (22) device regions adjacent to respective first and second opposite surfaces (11, 12) of a semiconductor body 10. Trenched field-shaping regions (40) including a resistive path (42) extend through the voltage-sustaining zone (20) to the underlying second region (22), so as to enhance the breakdown voltage of the device. The voltage-sustaining zone (20) and the trenched field-shaping regions (40) are present in both the active device area (A) and in the peripheral area (P) of the device. A further resistive path (53) extends across the first surface (11), outwardly over the peripheral area (P). This further resistive path (53) provides a potential divider that is connected to the respective resistive paths (42) of successive underlying trenched field-shaping regions (40) in the peripheral area (P).

Abstract: Disclosed herein is a solid-state imaging device having an effective pixel portion, an optical black portion, and a charge transfer register portion commonly provided in the effective pixel portion and the optical black portion, wherein the register width of a portion of the charge transfer register portion in the optical black portion is set larger than the register width of a portion of the charge transfer register portion in the effective pixel portion. With this configuration, the general dynamic range in the solid-state imaging device can be improved.

Abstract: A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

Abstract: An improved MISFET is disclosed which is particularly suited as a replacement for conventional pull-up and load elements such as NDR diodes, passive resistors, and conventional FETs. The MISFET includes a charge trapping layer formed at or extremely near to an interface between a substrate (which can be silicon or SOI) and a gate insulation layer. In this fashion, charge traps can be optimized for extremely rapid trapping and de-trapping of charge because they are extremely close to a channel of hot carriers. The MISFET channel can be shut off during static operations to further reduce power dissipation, and can also be adapted to operate with negative differential resistance.