Patents Issued in June 24, 2004
-
Publication number: 20040119038Abstract: The disclosure pertains to a space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The present invention also pertains to an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.Type: ApplicationFiled: July 12, 2003Publication date: June 24, 2004Applicant: Applied Materials, Inc.Inventors: Mark Crockett, John W. Lane, Michael J. DeChellis, Chris Melcer, Erica R. Porras, Aneesh Khullar, Balarabe N. Mohammed
-
Publication number: 20040119039Abstract: A system used to interface between the drive stage of a unipolar spray dampening control system, and a bipolar valve. The system converts from an input, whose duty cycle is governed by pulse width modulation, to one in which the pulse width is constant and the frequency varied. If the duty cycle conversion is not required, the system can operate in follower mode which allows the converter outputs to follow the input frequency. Also disclosed is a method of controlling a magnetically actuated bistable valve. The method involves receiving a unipolar signal and converting the unipolar signal to a bistable signal. The bistable signal is then sent to a bistable valve causing it to shift from its current state to an opposite state. A state is either a closed or open valve position. The state can be switched again by reversing the current.Type: ApplicationFiled: September 19, 2003Publication date: June 24, 2004Inventors: Michael A. Nierniro, Robert J. Magyar
-
Publication number: 20040119040Abstract: A valve device having a novel vale seat plate is provided. The valve seat plate has an inlet opening, an outlet opening, a front side and a back side. A sealing case covers the front side and inlet and outlet pipes are attached to the back side to communicate respectively with the inlet and outlet openings. A valve element moves to cover the outlet opening on the front side to close the outlet opening. The novel valve seat plate includes at least two plates that are joined to each other. One plate forms the area around the outlet opening and the other plate forms other areas of the valve seat plate.Type: ApplicationFiled: September 12, 2003Publication date: June 24, 2004Inventors: Tetsuhiko Hara, Shigeru Ozawa
-
Publication number: 20040119041Abstract: A throttle body (1) includes a throttle casing (2) and a motor casing (8). The throttle casing has a first main body (3) and a throttle valve (4) disposed within the first main body. The first main body is made of resin. The motor casing (8) has a second main body (9) and a motor (11) disposed within the second main body. The first main body and the second main body are formed separately from each other and are connected to each other via a joint device (27).Type: ApplicationFiled: November 7, 2003Publication date: June 24, 2004Applicant: Aisan Kogyo Kabushiki KaishaInventors: Shinji Kawai, Hisashi Kino
-
Publication number: 20040119042Abstract: Anti-corrosion solutions and processes useful for refrigeration processes are disclosed. Heteropoly complex anions of transitional metal elements can be added to an absorption solution which includes aqueous ammonia, alkali metal hydroxide and/or alkaline earth metal hydroxide, optionally in combination with transition metal compounds or compounds of the metallic elements of Groups IIIa to VIa of the Periodic Table of Elements to minimize corrosion of systems within which the solution is used.Type: ApplicationFiled: December 12, 2003Publication date: June 24, 2004Inventors: Shyam Kumar Verma, George Robert Sandor
-
Publication number: 20040119043Abstract: The invention relates to a defrosting agent containing: a) 51 to 70 percent by weight of an alkali metal carboxylate; b) 0.001 to 1 percent by weight of a surface active agent; c) 0.0001 to 1 percent by weight of a defrothing agent and d) 0.001 to 1 by weight of a corrosion inhibitor and water to 100 percent by weight.Type: ApplicationFiled: October 14, 2003Publication date: June 24, 2004Inventor: Harald Artur Dietl
-
Publication number: 20040119044Abstract: Antifreeze concentrates based on alkylene glycols or derivatives thereof or on glycerol, comprising from 0.0005 to 0.1% by weight of the dye C.I. Reactive Violet 5 (Colour Index No. 18097), based on the total amount of the concentrate.Type: ApplicationFiled: October 2, 2003Publication date: June 24, 2004Inventors: Bernd Wenderoth, Ladislaus Meszaros, Uwe Nitzschke, Stefan Dambach
-
Publication number: 20040119045Abstract: The present invention has for its object to provide a magnetorheological fluid having good dispersion stability and freedom from an unwanted increase in viscosity.Type: ApplicationFiled: January 16, 2004Publication date: June 24, 2004Inventors: Katsuhiko Hata, Takuya Tomura
-
Publication number: 20040119046Abstract: This invention relates to functional fluids incorporating base stocks and base oils that exhibit an unexpected combination of high viscosity index (130 or greater) and a ratio of measured-to-theoretical high-shear/low-temperature viscosity at −30C or lower, and the methods of making them. Specifically, the present invention relates to low-volatility/low-viscosity functional fluids comprising novel base stocks, with particular performance advantages in lubricating materials under high thermal stress, and methods to produce them.Type: ApplicationFiled: October 3, 2003Publication date: June 24, 2004Inventors: James Thomas Carey, Kim Elizabeth Fyfe, Eugenio Sanchez, David J. Baillargeon
-
Publication number: 20040119047Abstract: The use of pentafluoropropene (HFO-1225) and tetrafluoropropene (HFO-1234) in refrigeration equipment is disclosed. These materials are generally useful as refrigerants for heating and cooling, as blowing agents, as aerosol propellants, as solvent composition, and as fire extinguishing and suppressing agents.Type: ApplicationFiled: October 27, 2003Publication date: June 24, 2004Applicant: Honeywell International, Inc.Inventors: Rajiv R. Singh, Hang T. Pham, David P. Wilson, Raymond H. Thomas
-
Publication number: 20040119048Abstract: Process of making aqueous compositions comprising a perborate salt, a polyol, and optionally a builder and a surfactant. The advantageous properties of the composition include increased solubility of the perborate salt, increased available oxygen stability in an aqueous environment, and the capacity to increase the pH upon the dilution. The inventive process includes mixing the ingredients at a temperature below 50° C. and the pH below 10.Type: ApplicationFiled: December 19, 2002Publication date: June 24, 2004Applicant: Unilever Home & Personal Care USA, Divison of Conopco, Inc.Inventors: Yun Peng Zhu, Feng-Lung Gordon Hsu, Kimball James Woelfel
-
Publication number: 20040119049Abstract: Mono-, oligo- and poly-bis(thienyl) arylenes are suitable as as charge transport materials or semiconductors in electrooptical, electronic and electroluminescent devices, to charge transport and semiconductor materials, components and devices comprising mono-, oligo- and poly-bis(thienyl) arylenes.Type: ApplicationFiled: December 3, 2003Publication date: June 24, 2004Inventors: Martin Heeney, Mark Giles, Steven Tierney, Iain McCulloch, Clare Bailey
-
Publication number: 20040119050Abstract: The invention relates to 2,4′-substituted 6-cyclohexyl-trans-decalins of the general formula I 1Type: ApplicationFiled: October 7, 2003Publication date: June 24, 2004Inventors: Matthias Bremer, Detlef Pauluth, Georg Lssem
-
Publication number: 20040119051Abstract: The present invention relates to a liquid crystal composition having a high-speed response property and a liquid crystal display using the same, more particularly to a liquid crystal composition, wherein the liquid crystal has a high phase transition temperature, large birefringence index and modulus of elasticity, and a wide operable nematic temperature range, so that a high-speed response can be obtained to be useful for many liquid crystal devices including LCDs, and a liquid crystal display using the same.Type: ApplicationFiled: November 26, 2003Publication date: June 24, 2004Applicant: Samsung Electronics Co., Ltd.Inventors: Yong-Kuk Yun, Bong-Hee Kim, Bong-Sung Seo, Byeong-Seob Ban
-
Publication number: 20040119052Abstract: The present invention pertains to a novel process for preparing alpha- and beta-methyl-gamma-butyrolactones (MeGBL) and/or 3-Methyltetrahydrofuran (MeTHF) from 3-(hydroxymethyl)tetrahydrofuran (HOMeTHF), 3-formyltetrahydrofuran (FTHF) or a mixture thereof by contacting HOMeTHF, FTHF, or a mixture thereof with a catalyst comprising copper on hydrous zirconia under conditions of temperature and pressure conducive to the formation of MeGBL and/or MeTHF The process may be performed in the presence of an inert atmosphere and/or hydrogen gas. Further, the process may be performed in the presence of a secondary alcohol.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Inventors: William Anthony Beavers, Alexey Victorovitch Ignatchenko
-
Publication number: 20040119053Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.Type: ApplicationFiled: April 12, 2002Publication date: June 24, 2004Inventor: Christopher J. Nagel
-
Publication number: 20040119054Abstract: This invention provides the three novel La,Fe, La,Cr and Sm,Fe substituted barium titanate solid solution ferroelectric compositions with the formula Ba1−xLnxTi1−xMxO3 wherein when Ln is La, M is Fe or Cr, when Ln is Sm,M is Fe and x is from about 0.02 to about 0.06 and mixtures thereof, the novel La,Fe substituted barium strontium titanate solid solution ferroelectric compositions with the formula (Ba1−ySry)1−xLaxTi1−xFex O3 wherein y is greater than zero and less than about 0.6 and x is from about 0.01 to about 0.06 and the novel La,Al substituted barium strontium titanate solid solution ferroelectric compositions with the formula (Ba1−ySry)1−xLax Ti1−x/4−3a/4Ala(x−a)/4O3 wherein denotes a vacancy, y is greater than zero and less than about 0.6, a is from about 0.01 to about 0.06 and x is from 0.02 to about 0.10 with the proviso that x is greater than or equal to a.Type: ApplicationFiled: October 21, 2002Publication date: June 24, 2004Inventors: Dong Li, Munirpallam Appadorai Subramanian
-
Publication number: 20040119055Abstract: This invention provides the novel dielectric BiCu3Ti3FeO12. BiCu3Ti3FeO12 provides good dielectric tunability and low loss over a frequency range of from 10 kHz to 10 MHz and is especially useful in tunable devices such as phase shifters, matching networks, oscillators, filters, resonators, and antennas comprising interdigital and trilayer capacitors, coplanar waveguides and microstrips.Type: ApplicationFiled: October 21, 2002Publication date: June 24, 2004Inventors: Dong Li, Manirpallam Appadorai Subramanian
-
Publication number: 20040119056Abstract: The present invention relates to a plastics molding composition based on polyarylene sulfide and/or on liquid-crystalline plastic, where the molding composition comprises carbon black and graphite and/or metal powder, the carbon black has a specific surface area of from 500 to 1500 m2/g, and a dibutyl phthalate value of from 100 to 700 ml/100 g, and the graphite has a specific surface area of from 1 to 35 m2/g. The molding compositions of the invention have good conductivities, and better flowabilities and mechanical properties.Type: ApplicationFiled: December 2, 2003Publication date: June 24, 2004Inventors: Achim Hofmann, Hans-Gerhard Fritz, Ralf Kaiser
-
Publication number: 20040119057Abstract: Thermochromic compositions that include combinations of at least one color former and at least one Lewis acid in a polymer mixture are disclosed. The thermochromic compositions reversibly change appearance from substantially transparent to substantially non-transparent above a lower critical solution temperature.Type: ApplicationFiled: October 1, 2003Publication date: June 24, 2004Applicant: Spectra Systems CorporationInventors: Nabil M. Lawandy, Timothy J. Driscoll, Charles M. Zepp
-
Publication number: 20040119058Abstract: A protection system including a plurality of wires and a plurality of support members for supporting the plurality of wires. Each support member includes a base and an associated spike positionable in supportive engagement with a ground surface, and an elongate arm releasably connectable to the base and configured for supportably engaging the plurality of wires for supporting the wires relatively parallel and spaced apart to one another above the ground.Type: ApplicationFiled: December 18, 2002Publication date: June 24, 2004Inventor: Brett R. Burdick
-
Publication number: 20040119059Abstract: A fence tensioner includes a bracket adapted to be secured to a fence post, the bracket having upper and lower horizontal plate portions with vertically aligned cylinder openings and vertically aligned locking pin reaction holes therein. A tensioning cylinder is received in the vertically aligned cylinder openings for rotation relative to the upper and lower horizontal plate portions, the tensioning cylinder having at least one slot extending along the cylinder for receiving a fence slat, and flanges at opposite ends thereof that retain the tensioning cylinder in the aligned cylinder openings. Each of the flanges has a circular array of selectively useable locking apertures therein. The upper flange is provided with a profiled opening for receiving a similarly profiled tool for rotating the cylinder. A locking pin is provided that is adapted to extend through the aligned locking pin reaction holes and through a selected pair of aligned locking apertures to lock the fence slat in the tensioned position.Type: ApplicationFiled: December 23, 2002Publication date: June 24, 2004Inventor: Jason T. Reiff
-
Publication number: 20040119060Abstract: A bracket for supporting an elongated rail with respect to a post includes a bracket body with a rail supporting portion and an attachment portion. The rail supporting portion has an opening defined therein for receiving the end of the rail when the bracket body is installed. The opening has a central axis. The attachment portion has a first surface and a second surface spaced therefrom. A fastener receiving passage is defined from the first surface to the second surface. The passage is formed by a first bore extending from the first surface part way to the second surface and a second bore extending part way from the second surface to the first surface. The first and second bores interconnect to find the passage. The central axis of the first and second bores are each generally parallel to the central axis in the opening. The axis of the first and second bores are offset with respect to one another by a distance greater than half the difference in their widths.Type: ApplicationFiled: August 20, 2003Publication date: June 24, 2004Inventors: Richard W. Cantley, Howard Sagermann, Brian David Wood, Peter Paul Heysel, Frederick J. Wheeler
-
Publication number: 20040119061Abstract: A method for performing a single-qubit gate on an arbitrary quantum state. An ancillary qubit is set to an initial state |I>. The data qubit is coupled to an ancillary qubit. The state of the ancillary qubit is measured, and the data qubit and the ancillary qubit are coupled for a first period of time. A method for applying a single-qubit gate to an arbitrary quantum state. A state of a first and second ancillary qubit are set to an entangled initial state |I>. A state of a data qubit and the first ancillary qubit are measured thereby potentially performing a single qubit operation on the arbitrary quantum state. A first result is determined. The first result indicates whether the single qubit operation applied the single qubit gate to the arbitrary quantum state.Type: ApplicationFiled: July 25, 2003Publication date: June 24, 2004Inventors: Lian-Ao Wu, Daniel Amihud Lidar, Alexandre Blais
-
Publication number: 20040119062Abstract: A self-organized nanometer interface structure is disclosed. During the reactive sputtering process, the chemical dynamics difference among reactants induces self-organization to form a special nanometer interface structure. The nanometer interface structure naturally form an interface potential difference so that it has a rectifying effect in a particular range of potential variation range. Therefore, it functions like a diode. Such a self-organized nanometer interface structure can be used in the manufacturing of diodes, transistors, light-emitting devices, and sonic devices. The invention has the advantages of a wide variety of material selections, highly compatible processes, easy operations, and low-cost fabrications.Type: ApplicationFiled: March 4, 2003Publication date: June 24, 2004Inventors: Jong-Hong Lu, Huai-Luh Chang, Chiung-Hsiung Chen, Yi-Ping Huang, Sheng-Ju Liao, Yuh-Fwu Chou, Ho-Yin Pun
-
Publication number: 20040119063Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1−R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.Type: ApplicationFiled: November 25, 2003Publication date: June 24, 2004Applicant: Emcore CorporationInventors: Shiping Guo, David Gotthold, Milan Pophristic, Boris Peres, Ivan Eliashevich, Bryan S. Shelton, Alex D. Ceruzzi, Michael Murphy, Richard A. Stall
-
Publication number: 20040119064Abstract: Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.Type: ApplicationFiled: November 26, 2003Publication date: June 24, 2004Inventors: Jagdish Narayan, Ashutosh Tiwari
-
Publication number: 20040119065Abstract: A semiconductor device includes a memory portion in which a plurality of magneto-resistance effect elements each having a hard-axis of magnetization and an easy-axis of magnetization are arranged and one of binary data is written in all the magneto-resistance effect elements, and a circuit portion to which a write current is supplied to write only the other one of the binary data in only a selected magneto-resistance effect element selected from the magneto-resistance effect elements.Type: ApplicationFiled: March 21, 2003Publication date: June 24, 2004Inventor: Takeshi Kajiyama
-
Publication number: 20040119066Abstract: An organic electroluminescent device includes a transparent substrate having at least first, second and third pixels defined thereon, a first longitudinal bank located between the first pixel and the second pixel, a second longitudinal bank located between the second pixel and the third pixel, and an organic luminous polymer layer over the substrate and between the first longitudinal bank and the second longitudinal bank. The device also includes a transverse bank extending between the first longitudinal bank and the second longitudinal bank. Sidewalls of the longitudinal banks and the transverse bank slope outwardly. The transverse bank has a height which is less than a height of the longitudinal banks. A method of forming the device utilizes nozzle coating or ink-jet coating, and a specially configured mask for producing the banks of differing heights.Type: ApplicationFiled: September 2, 2003Publication date: June 24, 2004Inventors: Chang-Wook Han, Sung-Joon Bae, Hee-Sok Pang, Kwan-Soo Kim
-
Publication number: 20040119067Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: September 30, 2003Publication date: June 24, 2004Applicant: Nitronex CorporationInventors: T. Warren Weeks, Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
-
Publication number: 20040119068Abstract: A covered substrate is described, which comprises: (a) a flexible substrate layer; and (b) a plurality of cooperative barrier layers disposed on the substrate layer. The plurality of cooperative barrier layers further comprise one or more planarizing layers and one or more high-density layers. Moreover, at least one high-density layer is disposed over at least one planarizing layer in a manner such that the at least one high-density layer extends to the substrate layer and cooperates with the substrate layer to completely surround the at least one planarizing layer. When combined with an additional barrier region, such covered substrates are effective for enclosing organic optoelectronic devices, such organic light emitting diodes, organic electrochromic displays, organic photovoltaic devices and organic thin film transistors. Preferred organic optoelectronic devices are organic light emitting diodes.Type: ApplicationFiled: November 13, 2003Publication date: June 24, 2004Inventor: Michael Stuart Weaver
-
Publication number: 20040119069Abstract: Optical transducers disposed on an integrated circuit correspond to test points thereon. The state of optical transducers perceived by an optical sensor is correlated to test points. Alignment of the optical sensor relative to the optical transducers is accomplished electronically or mechanically.Type: ApplicationFiled: December 24, 2002Publication date: June 24, 2004Inventors: Jeff R. Gemar, Mark J. Erlenborn, George Harper, Keith A. Kind, Welborn R. Malpass, Sam L. Spencer, Kewei Yang
-
Publication number: 20040119070Abstract: Structures and methods that facilitate integration and/or isolation of various functions in a microchip system are disclosed. In one embodiment, the integration of the functions is by a multi-chip, sliding linear valve approach. The chips are in continued physical contact. In a second embodiment, the chips are separated and rejoined when they are moved to the preferred position. Surface coating of the joining edges helps prevent leakage and keeps liquid in the capillary channels for both embodiments. Another embodiment relates to miniature valves. Several designs were disclosed, including the linear, edge-contact sliding valve approach. Method to fabricate very small, high aspect ratio holes in glass was also disclosed, which facilitates the above embodiments.Type: ApplicationFiled: August 1, 2003Publication date: June 24, 2004Inventors: David John Roach, Jing Ni, Iuliu-Ioan Blaga, Owe Salven, Stevan Bogdan Jovanovich
-
Publication number: 20040119071Abstract: An electro-optical device for a liquid-crystal apparatus includes TFTs provided above a substrate, pixel electrodes that are provided above the TFTs and that are connected to corresponding relay electrodes via contact holes, a protection insulating film that is provided on the pixel electrodes from the gaps between the pixel electrodes to the edge portions thereof so as to cover end surfaces of the edge portions of the pixel electrodes, and an alignment layer that is provided on a surface including the protection insulating film and that is rubbed. Material residues of the alignment layer are reduced or prevented from being generated or trapped in the vicinities of the edges of the pixel electrodes and in the vicinities of the contact holes. Consequently, brightness irregularities or display irregularities are reduced.Type: ApplicationFiled: November 12, 2003Publication date: June 24, 2004Applicant: Seiko Epson CorporationInventor: Kenichi Takahara
-
Publication number: 20040119072Abstract: A gate of a thin film transistor (TFT) is formed on a surface of a substrate. A gate insulating (GI) layer and an amorphous silicon layer are then sequentially formed on the gate. A dehydrogen treatment is performed thereafter, and a re-crystallizing process is performed to transform the amorphous silicon layer into a crystalline silicon layer. Then, a doped n30 layer is formed on the gate, and portions of the doped n+ layer and the crystalline silicon layer are removed thereafter. Finally, a source and a gate of the thin film transistor are formed on the gate, and a passivation layer is formed to cover the source and the gate.Type: ApplicationFiled: March 24, 2003Publication date: June 24, 2004Inventors: Hsin-Hung Lee, I-Chang Tsao, Chih-Hung Su
-
Publication number: 20040119073Abstract: Soluble, photosensitive precursors of pentacene are synthesized by a one-step Diels-Alder reaction of pentacene with N-sulfinylamides. These precursors may include a photopolymerizable group, which renders the pentacene precursor as a negative tone resist. The pentacene precursor may also include an acid-sensitive protecting group, which in the presence of a photoacid generator and upon exposure to UV light, is removed and the product becomes base soluble. Patterned pentacene thin films may be obtained by exposure to UV light through a mask and/or heating, and used as an active channel material for an organic field effect transistor.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Applicant: International Business Machines CorporationInventors: Ali Afzali Ardakami, Christos D. Dimitrakopoulos, Teresita O. Graham, David R. Medeiros
-
Publication number: 20040119074Abstract: A thin film transistor liquid crystal display (TFT-LCD) and fabrication method thereof. The fabrication method includes depositing a first metal layer on a transparent substrate, patterning the first metal layer to form at least two adjacent gate electrodes, forming a gate insulating layer on the gate electrodes, forming a semiconductor layer on the insulating layer, patterning the semiconductor layer into a predetermined shape, depositing a second metal layer on the transparent substrate, patterning the second metal layer to form a source/drain electrode layer, and depositing an insulating layer on the transparent substrate. A contact hole is defined via the insulating layer, source/drain electrode layer, and gate insulating layer, exposing a part of the surface of transparent substrate between the adjacent gate electrodes. A transparent conductive layer is deposited on the transparent substrate, and a light-shielding matrix is formed directly above the contact hole.Type: ApplicationFiled: August 25, 2003Publication date: June 24, 2004Inventor: Maw-Song Chen
-
Publication number: 20040119075Abstract: The present invention provides an electro-optical device including, on a substrate, data lines extending in a predetermined direction, scanning lines extending orthogonal to the data lines, pixel electrodes and pixel switching elements arranged at intersections of the scanning lines and the data lines, and capacitors including, as first electrodes, conductive layers connected to or extending from the data lines.Type: ApplicationFiled: September 9, 2003Publication date: June 24, 2004Applicant: Seiko Epson CorporationInventor: Masao Murade
-
Publication number: 20040119076Abstract: Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.Type: ApplicationFiled: October 30, 2003Publication date: June 24, 2004Inventor: Sei-Hyung Ryu
-
Publication number: 20040119077Abstract: A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25&lgr;n and has a portion located between about 0.6&lgr;n and 0.75&lgr;n from the electrode, where &lgr;n is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6&lgr;n and 0.75&lgr;n from the electrode and a portion of a second cluster located between about 1.2&lgr;n and 1.35&lgr;n from the electrode.Type: ApplicationFiled: July 31, 2003Publication date: June 24, 2004Inventors: Mira S. Misra, Yu-Chen Shen, Stephen A. Stockman
-
Publication number: 20040119078Abstract: A power LED high in light extraction efficiency is obtained without increasing the operation voltage and degrading the reliability. The power LED comprises: epitaxial growth layers including a first conductive type clad layer, an active layer made of an InGaAlP compound semiconductor on said first conductive type clad layer to generate light, and a second conductive type clad layer formed on said active layer; and a transparent first conductive type GaP substrate made of GaP with a thickness of equal to or more than 150 &mgr;m and having a first surface, said first surface having an area equal to or wider than 0.1 mm2 and bonded to a bonding surface of said first conductive type clad layer via no layer or via a bond layer, an area of said bonding surface of said first conductive type clad layer being smaller than said first surface of said substrate to locally expose said first surface or said bond layer.Type: ApplicationFiled: September 26, 2003Publication date: June 24, 2004Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kuniaki Konno, Junichi Fujiki
-
Publication number: 20040119079Abstract: An light oscillation part including an active layer 20 for generating light by current injection, a tuning layer 24 with an intermediate layer 22 formed between the active layer 20 and the tuning layer 24, for varying an oscillation wavelength by current injection and a diffraction grating 28 formed near the active layer 20 and the tuning layer 24, and a light amplification part including an active layer 20 for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.Type: ApplicationFiled: October 22, 2003Publication date: June 24, 2004Inventors: Akinori Hayakawa, Yoshihiro Sato, Ken Morito, Norihiko Sekine
-
Publication number: 20040119080Abstract: A semiconductor light-emitting device 1 comprises a first semiconductor layer 3, an active layer 5, a second semiconductor layer 7, a third semiconductor layer 9, and a current block semiconductor layer 11. The first semiconductor layer 3 is provided on the surface of GaAs semiconductor. The active layer 5 is provided on the first semiconductor layer 3. The second semiconductor layer 7 is provided on the active layer 5. The third semiconductor layer 9 is provided on the second semiconductor layer 7, and has a pair of side faces 9a, 9b. The current block semiconductor layer 11 is provided on the second semiconductor layer 7 and a pair of side faces 9a, 9b of the third semiconductor layer 9. The third semiconductor layer of a stripe form 9 extends along a predetermined axis. The current block semiconductor layer 11 has a conductivity type different from the third semiconductor layer 9. The active layer 5 is formed of III-V compound semiconductor including at least nitrogen as a V group member.Type: ApplicationFiled: August 12, 2003Publication date: June 24, 2004Inventors: Jun-ichi Hashimoto, Tsukuru Katsuyama
-
Publication number: 20040119081Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.Type: ApplicationFiled: December 11, 2003Publication date: June 24, 2004Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Masayoshi Takemi, Kenichi Ono, Yoshihiko Hanamaki, Chikara Watatani, Tetsuya Yagi, Harumi Nishiguchi, Motoko Sasaki, Shinji Abe, Yasuaki Yoshida
-
Publication number: 20040119082Abstract: Nitride based semiconductor light-emitting devices with a sufficiently low contact resistance p-type electrode and a method of manufacturing the same are disclosed. One such method of manufacturing nitride based semiconductor light-emitting devices includes steps of growing island-like AlGaN films 17 on p-type nitride based semiconductor layer 16, etching a surface of p-type type nitride based semiconductor layer 16 to make uneven portions 18 on its surface by using island-like AlGaN films 17 as a photomask, and forming of a p-type ohmic electrode on an electrode forming region of the uneven portion 18.Type: ApplicationFiled: December 9, 2003Publication date: June 24, 2004Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Hideto Sugawara
-
Publication number: 20040119083Abstract: A white-light LED with omni-directional reflectors includes an LED chip for emitting white-light. A light transmitting material surrounding the LED and phosphor grains is dispersed in order to excite fluorescence via emission of LED. Two omni-directional reflectors are implemented on the top and/or bottom of the LED symmetrically surrounding the light transmitting material and the LED chip. The light from the LED was reflected omni-directionally, via the dielectric omni-directional reflectors, to increasing the efficiency and/or spectral characteristics and uniformity of the visible light emission.Type: ApplicationFiled: March 25, 2003Publication date: June 24, 2004Inventors: Jung-Chieh Su, Jun-Ren Lo, Jim-Yong Chi
-
Publication number: 20040119084Abstract: A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-reflection structure carrier and adheres to the light emitting layer through the transparent adhesive layer.Type: ApplicationFiled: October 29, 2003Publication date: June 24, 2004Inventors: Min-Hsun Hsieh, Wen-Huang Liu
-
Publication number: 20040119085Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.Type: ApplicationFiled: September 24, 2003Publication date: June 24, 2004Applicant: Osram Opto Semiconductor GmbHInventors: Stefan Bader, Michael Fehrer, Wilhelm Stein, Stephan Kaiser, Volker Harle, Berthold Hahn
-
Publication number: 20040119086Abstract: An LED lamp includes at least one LED chip and a wavelength converting portion including a phosphor for transforming the emission of the LED chip into light having a longer wavelength than that of the emission. The LED lamp further includes filtering member. The filtering member is designed such that the spectral transmittance thereof becomes lower in at least a portion of the wavelength range of 550 nm to 605 nm than in the remaining visible radiation range.Type: ApplicationFiled: November 25, 2003Publication date: June 24, 2004Applicant: Matsushita Electric Industrial Co. Ltd.Inventors: Tadashi Yano, Masanori Shimizu, Nobuyuki Matsui, Tatsumi Setomoto, Tetsushi Tamura
-
Publication number: 20040119087Abstract: A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.Type: ApplicationFiled: August 27, 2003Publication date: June 24, 2004Applicant: IXYS CorporationInventors: Subhas C. Bose Jayappa Veeramma, Ulrich Kelberlau