Abstract: The invention relates to a method of calculating the local contrast at each pixel (PC) in a network (Mp) of photosensitive pixels which are arranged in at least one dimension (x, y). The inventive method consists in, during successive image acquisition cycles, producing a signal which is representative of the local luminance at each pixel, said luminance-representative signals being integrated values of luminance values sensed by the respective pixels (pC, pG, pD, pH, pB). The inventive method consists in: sampling the integrated values of the signals representing the luminance values at the pixels adjacent (pG, pD, pH, pB) to a considered pixel (pC), said sampling taking place at an instant in the cycle when the integrated value of the luminance at the considered pixel (pC) is equal to a pre-determined reference value; and determining the local contrast at the considered pixel (pC) on the basis of values thus sampled.

Abstract: Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Abstract: A method and device are provided for placing components in a desired position on at least one substrate. The device includes a movable arm on which at least two image recording device are provided and separated by a predetermined pitch distance. In addition, two placement devices, which are separated by the same pitch distance, are also present on the arm. The spacing between the image recording devices and the placement devices is one pitch distance or a multiple thereof. A picture may be taken of at least one reference element present on a substrate by at least one image recording device, and simultaneously therewith a component may be placed on a substrate by at least one placement device.

Abstract: A color image capture element comprises a plurality of color component photoelectric conversion elements, each disposed with a color filter on a light receiving surface for respectively transmitting different color components, for receiving incoming light and selectively outputting respective color signals corresponding to the intensity of the different color components, and an infrared component photoelectric conversion element, disposed with an infrared transmitting filter on a light receiving surface for transmitting an infrared component, for selectively outputting an infrared signal. This enables the infrared component included in at least one of a plurality of color signals to be corrected, thereby improving the sensitivity of a color image capture apparatus.

Abstract: A single-, two- or three-axis opto-electronic encoder, or error-inputting device, with an optical scale which is overall cylindrical, spherical or volumetric, as opposed to extant planar, circular optical scales; mostly parallel rays of light enter from the cylindrical or spherical surface of the scale, travel, with or without being modulated in intensity due to rotation/rotations of, or distortion/distortions in, the scale, along elliptical and/or circular sectional planes of the scale and exit to fall upon an obstructing opto-electronic sensor or a plurality of such sensors.

Abstract: An optical observation image obtained through an objective lens is displayed on a display unit, and a marker indicating a position of a tip portion of a cantilever is displayed on the optical observation image displayed on the display unit.

Abstract: A radiation detector for detecting radiation such as x-rays. The radiation detector includes a detector having a plurality of pixels, wherein each of the pixels is used for detecting the radiation. The radiation detector also includes a ball grid array (BGA) package having a plurality of solder balls formed on a first side and a plurality of contacts formed on a second side. The BGA package also has a cavity, in which at least one integrated circuit (IC) chip is mounted. The IC chip has a plurality of readout channels, each of the readout channels being coupled to a corresponding one of the pixels via a corresponding one of the solder balls to receive an electrical signal corresponding to the radiation detected by the corresponding one of the pixels.

Abstract: The present invention relates to optical confinements, methods of preparing and methods of using them for analyzing molecules and/or monitoring chemical reactions. The apparatus and methods embodied in the present invention are particularly useful for high-throughout and low-cost single-molecular analysis.

Abstract: An apparatus for mass analyzing molecules includes a mass spectrometer configured to select precursor ions having a mass to charge ratio range, a metastable species generator configured to generate a metastable species for introduction into the mass spectrometer, and a mass detector configured to detect a mass of the product ions. The apparatus also includes interaction region in the mass spectrometer where the precursor ions fragment into product ions via interaction of the precursor ions with the metastable species.

Abstract: An ion mobility/mass spectrometry method and instrument using aerosolized samples and dual positive and negative mode detection is described. Sample preparation methods are also described.

Abstract: Techniques and instrumentation are described for analyses of substances, including complex samples/mixtures that require separation prior to characterization of individual components. A method is disclosed for separation of ion mixtures and identification of ions, including protein and other macromolecular ions and their different structural isomers. Analyte ions are not free to rotate during the separation, but are substantially oriented with respect to the drift direction. Alignment is achieved by applying, at a particular angle to the drift field, a much stronger alternating electric field that “locks” the ion dipoles with moments exceeding a certain value. That value depends on the buffer gas composition, pressure, and temperature, but may be as low as ˜3 Debye under certain conditions.

Abstract: A scanning probe microscope having a cantilever holder is provided which gives a cantilever great amplitude by a small-sized vibrator configurable in a limited space and is stably operated even in environments of high viscous drag such as a liquid. A cantilever base part of a cantilever is fixed to a fixing part of a scanning probe microscopy cantilever holder. A vibrator is mounted on the fixing part. When it is defined that the front side is the side close to a probe and the rear side is the side close to a supporting part of the fixing part along in the longitudinal direction of the cantilever, the vibrator displaces the front and rear sides of the fixing part of the cantilever holder to each other in the opposite directions within the plane orthogonal to the sample surface to vibrate the cantilever in a liquid.

Abstract: Nanotubes and nanotube-based devices are implemented in a variety of applications. According to an example embodiment of the present invention, nanotube tips are coated with metal. In some applications, the metal coating facilitates the resolution of nano-scale magnetic features, such as features smaller than about 20 nanometers. In another embodiment, such metal-coated nanotubes are implemented with magnetic force microscopy (MFM) applications and adapted for implementation with structures and arrangements exhibiting a high aspect ratio, facilitating quantitative analysis of MFM data.

Abstract: A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.

Abstract: A dichroic type narrow-band-pass filter is used as a beamsplitter inside a night vision goggle eyepiece. The filter is combined with appropriately aligned polarizers and liquid crystal type shutter rotators movable between a “P” orientation and an “S” orientation to transmit center band and side band wavelengths of the normal view or night scene for recording, transmitting or enhancing. In the enhanced low light level mode, the intensified visible image presented to the user comprises a 40 degree circular image with a 30 degree by 22.5 degree rectangular display insert.

Abstract: An abnormality detection support device, suitable for a case where rescue operations are made under situations that visibility is disturbed by smoke due to fire, includes an infrared camera, a display which, at least when the infrared camera is in use, comes to be positioned in front of a user's eyes and reproduces an image taken by the infrared camera thereon and a face protector or a helmet, on which the infrared camera and the display are provided, and the infrared camera and the display are arranged to be within an outline of the user's head in a front view when the device is put on the user. The present invention can, therefore, provide the abnormality detection support device which enables an operator to work with both hands available while directly watching the infrared image even under a circumstance that smoke or the like due to occurrence of fire disturbs the field of vision of the operator, and has excellent usability.

Abstract: A thermal sensor structure having one level for an infrared detecting pixel including the sensor associated electronics. The electronics displace a small area thereby having little effect on the fill area of the pixel relative to a level having no pixel electronics. That level has thermally isolation for the substrate through the limited structural attachment to the substrate because of the access vias to the silicon. It has additional isolation because of a pit of removed silicon from the substrate below that one level. The thermal sensor may have an array with a large number of pixels having the one level for the pixels and electronics structure.

Abstract: According to one embodiment, a passive infrared sensor 1 includes an infrared sensing element 4, a pair of lenses 5R and 5L, and main mirrors 22R and 22L. A submirror 24R is disposed on the main mirror 22R. The submirror 24R is configured so that, with respect to the main mirror 22R, the orientation of the submirror 24R is changed by a first predetermined angle in regard to the horizontal direction in a direction away from an attachment surface 30 at the installation time, and the orientation of the submirror 24R is changed by a second predetermined angle in regard to the vertical direction in a direction downward at the installation time. A submirror 23L is disposed on the main mirror 22L.

Abstract: A radiation detector includes a housing, a crystal and a photomultiplier tube supported in the housing. A plurality of elongated, flat plastic or ceramic springs are located radially between the crystal and photomultiplier tube and the housing, and at least one additional spring is located at one end of the crystal.

Abstract: The radiation detector/imaging substrate arrays in an x-ray and gamma-ray radiation energy imaging device are described which use an electrically conductive adhesive to provide electron charge signaling continuity between the detector and read-out substrates of the device. The present device utilizes a plurality of electrically conductive bonds each discretely connecting a pixel contact in the pixel pattern to a signal contact in the signal contact pattern, the bonds being an electrically conductive adhesive. This bonding technique is especially useful in detection/imaging arrays having detector substrates comprising Cadmium and Tellurium compositions. The present invention is practicable with semiconductor detector and read-out substrates with or without “bumped” electrical contacts. The electrically conductive bonds utilize either isotropically or anisotropically conductive adhesives.

Abstract: Electrochemical corrosion of a reflective layer provided in a scintillator panel is prevented. The scintillator panel includes a conductive base member for supporting a wavelength converter layer and a reflective layer for emitting light converted by a phosphor layer to the outside, in which an insulating layer is formed between the conductive base member and the reflective layer. Alternatively, the above problem is solved by a scintillator panel in which the full circumference including the base member surface side of the reflective layer, the wavelength converter layer side of the reflective layer, and end surfaces of the reflective layer is covered with an insulating layer or a protective film for the reflective layer and a radiation imaging device using such a scintillator panel.

Abstract: A radiation image generating system, comprising: a plurality of radiation image detecting apparatuses, each including at least a scintillator layer having a scintillator to emit light according to an entered radiation, a photoelectric conversion layer to detect the light emitted by the scintillator to convert the detected light into electric energy, and a switching element layer having switching elements to accumulate and output the electric energy obtained by the photoelectric conversion layer, the radiation image detecting apparatuses obtaining radiation image information of a subject; and a radiation image generating operation control apparatus including a selection section to select a desired radiation image detecting apparatus among the plurality of radiation image detecting apparatuses, wherein the radiation image generating operation control apparatus includes a display section to display scintillator information of the scintillator used in each of the plurality of radiation image detecting apparatuses

Abstract: A method for detecting single photons of high energy radiation using a detector comprising an array of pixels, each pixel including a charge receptive substrate. The method includes the operations of capturing high energy photons with the pixel array, collecting the charges generated in each pixel by the charge receptive substrate of that pixel, reading out the collected charges and analyzing the read out charges. In addition, a system for detecting single photons of high energy radiation is described. The system includes a pixel array in which each pixel includes a polycrystalline photoconductive film deposited on a charge receptive substrate. The system further includes low noise electronics for reading out the charges generated by high energy photons when the latter interact with the film. Additionally, the system includes a data processor in communication with the low noise electronics.

Abstract: The invention relates to a method and apparatus for determining the intensity distribution of a radiation field. In the method, the ionization caused by the radiation field is detected by parallel ionization detector planes arranged in an ionization chamber, two of which planes are formed of series of wires determining the position of an ionization event in the X and Y directions, which detector planes provide the X and Y co-ordinates X1, Y1 of the ionization event. The ionization event is created by photonuclear reaction products arising from the radiation.

Abstract: The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

Abstract: A method for discharging a sample, the method includes: determining whether to discharge a negatively charged area of a sample or to discharge a positively charged area of the sample; and injecting gas, via an electrode and gas supply component, or setting a first electrode to a first voltage and set the electrode and gas supply component to a second voltage, in response to the determination. A system including: a first electrode adapted to be set to at least a first potential; an electrode and gas supply component, adapted to be set to at least a second potential and to selectively supply gas to a vicinity of the sample; wherein at least one out of the first electrode and the electrode and gas supply component are positioned close to the sample.

Abstract: A method is described for quantitative determination of suitability of an optical material, especially alkali halide and alkaline earth halide single crystals, for optical components exposed to high energy densities, especially of pulsed laser light at wavelengths under 250 nm. In this procedure radiation-dependent transmission of the optical material is determined at ultraviolet wavelengths by fluorescence measurements for fluorescence induced by ultraviolet radiation at these ultraviolet wavelengths. This is accomplished by a method including determining an induced fluorescence maximum of a non-linear absorption process, measuring a slope (|dT/dH|) of a functional relationship representing the dependence of the radiation-dependent transmission on fluence (H) for the induced, fluorescence and determining radiation-dependent transmissions from this slope for particular fluence values.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: An infrared emitter for use with self-propelled aerial targets used to simulate jet aircraft for use as a target for anti-aircraft missile systems. The emitter provides an infrared source that simulates the infrared energy produced by an aircraft. The emitter incorporates a network of platinum beads that are arranged along and between a plurality of parallel stainless steel screens. The network is contained in a heating conduit that is secured to a housing. The housing is provided with an opening to allow for attachment to the exhaust ports of a self-propelled aerial target's engine. Combustion gases produced by the aerial target's engine are expelled through the exhaust port and pass through to the emitter. The gases heat the network of beads and screens thereby causing the network to emit an infrared signature such that the heat seeking/sensing mechanisms of anti-aircraft missiles systems are able to locate and direct the missile to the target.

Abstract: Packaging system for radioactive materials having: a vial with closure for accommodating the radioactive material; a first casing to be opened, enclosing the vial, and essentially made from a transparent material, which has a capture cross-section selected for shielding at least a part of the emitted radiation; and a second casing to be opened, made from a material with a high capture cross-section (Z) for essentially shielding the remaining radiation, the second casing enclosing the first casing.

Abstract: A stainless steel slab containing B, wherein a protecting material is joined onto at least two faces across the bloom from each other in a stainless steel bloom containing B of 0.3–2.5 mass %, being integrated into one-piece by forming a weld metal comprising a stainless steel with chemical composition that satisfies the relationship expressed by following formulas (1)–(4), and a method to produce a steel product by rolling said slab. Further, it is preferable to interpose an insert material between above stainless steel bloom and above protecting material in bonding process. 15?Cr eq?30,??(1) 4?Cr eq?Ni eq?17,??(2) Cr eq=Cr+1.5 Si+Mo?5 B,??(3) Ni eq=Ni+30 (C+N)+0.5 Mn??(4) Herein, each symbol of a chemical element designates the content (mass %) of relevant chemical element contained in steel.

Abstract: A device for sensing currency comprises means for deriving a signal from a currency item and means for deriving values representative of a characteristic or characteristics of the currency item from said signal using an inverse representation of part of the sensing device.

Abstract: An inspection system, and process for use thereof, for inspecting semiconductors or like substrates. The inspection system includes an inspection device and an auxiliary sensor apart from the inspection device. The auxiliary sensor is used to collect height data and generate a map of a semiconductor or like substrate to aids in focusing the inspection device.

Abstract: A tool operates with a guide system to identify the orientation of a tool on a work piece. In one implementation, the tool identifies its orientation with respect to a guide signal supplied by the guide system. In an alternate embodiment, the tool determines its absolute orientation, such as a (x, y) coordinate. The tool includes an action component adapted to alter the work piece, such as a cutting head in a router. A guide detector in the tool detects a position of a guide signal from the guide system. A location detector in the tool receives the position data and employs it to determine the tool's orientation. Based on the detected orientation, the tool decides whether any tool adjustments are necessary. Examples of tool adjustments include the following: adjusting the position of the action component, enabling or disabling the action component, and providing operating indicators to direct a tool operator's use of the tool.

Abstract: An image storage screen or panel, suitable for use in applications related with computed radiography comprises, on a support, a binderless needle-shaped stimulable CsBr:Eu phosphor layer, wherein, besides low amounts of a europium activator or dopant in favor of homogeneous distribution of said activator in the CsBr matrix, presence of well-defined amounts of rubidium halide and cesium chloride in said matrix, and, optionally, further presence of alkali metal, alkaline earth metal and/or metal earth salts, and/or, optionally, other metal salts or oxides, provides a remarkable speed increase, without loss in sharpness.

Abstract: A biochemical analysis data producing method includes the steps of selectively storing one of radiation energy and light energy in a plurality of stimulable phosphor layer regions two-dimensionally formed in a support of a stimulable phosphor sheet and spaced apart from each other, moving the stimulable phosphor sheet and a stimulating ray relative to each other in a main scanning direction and a sub-scanning direction, sequentially irradiating the plurality of stimulable phosphor layer regions so that energy of the stimulating ray projected onto the plurality of stimulable phosphor layer regions per unit area is higher than that projected on regions other than the plurality of stimulable phosphor layer regions, thereby exciting stimulable phosphor contained in the plurality of stimulable phosphor layer regions, and photoelectrically detecting stimulated emission released from the stimulable phosphor layer to produce biochemical analysis data.

Abstract: The invention relates to a method of reading out information items stored in a phosphor layer, in which the phosphor layer is excited to emit emission light and the emission light is sensed by a detector and the detector is moved relative to the phosphor layer. During this process, the detector consecutively senses the emission light emitted in each case by individual regions of the phosphor layer. To reduce the dark noise and the movement blur, provision is made that the detector senses the emission light emitted by a region during an integration time that is less than a forward-travel time for the movement of the detector by the width of the region in the forward-travel direction (V).

Abstract: A read-out device reads out X-rays stored in phosphor layers. To improve image quality, the read-out device is controlled such that an X-ray of a first body part, e.g. of a limb, stored in a phosphor layer is read out by the read-out device controlled in a first read-out mode, and an X-ray of a second, different body part, e.g. of a thorax, stored in the phosphor layer is read out by the read-out device controlled in a second read-out mode. The scan parameters of the read-out device set in the first read-out mode are different from the scan parameters set in the second read-out mode in at least one scan parameter. The scan parameters include, but are not limited to, the size of the pixels, the intensity and/or the width of a focus range of stimulation light on the phosphor layer, the sampling rate of a detector, and a speed of the phosphor layer in relative movement to the read-out device.

Abstract: A breast image obtaining apparatus using a solid-sate detector, or stimulable phosphor panel capable of correctly obtaining image information up to the area closer to the chest wall of a subject. when picking up the image, the solid-state detector is moved to a place close to the side wall of the housing on the chest wall side by the moving means to pick up the image up to the area close to the chest wall, and when reading the image, it is moved to the opposite direction to secure the overrun zone between the side wall of the housing and end of the solid-state detector on the subject side. By completing acceleration or deceleration of the reading light exposure section within this zone, the scanning rate of the reading light exposure section is maintained constant across the entire region of the solid-state detector.

Abstract: A radiation image is read out by causing a linear reading light beam to scan a radiation image sensor, which has a plurality of parallel linear electrodes to output charge signals according to the radiation image upon exposure to a reading light beam in the longitudinal direction of the linear electrodes, and obtaining an image signal by integrating charge signals, output by the respective linear electrodes in response to the scan of the reading light beam. A pulsed light beam which is projected onto the radiation image sensor for a predetermined time in each of the integrating times is employed as the reading light beam, and projection of the pulsed light beam is controlled so that the center of the time for which the pulsed light beam is projected onto the radiation image sensor is earlier than the center of the integrating time.

Abstract: A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.

Abstract: An n-type MOSFET (NMOS) is implemented on a substrate having an epitaxial layer of strained silicon formed on a layer of silicon germanium. The MOSFET includes first halo regions formed in the strained silicon layer that extent toward the channel region beyond the ends of shallow source and drain extensions. Second halo regions formed in the underlying silicon germanium layer extend toward the channel region beyond the ends of the shallow source and drain extensions and extend deeper into the silicon germanium layer than the shallow source and drain extensions. The p-type dopant of the first and second halo regions slows the high rate of diffusion of the n-type dopant of the shallow source and drain extensions through the silicon germanium toward the channel region. By counteracting the increased diffusion rate of the n-type dopant in this manner, the shallow source and drain extension profiles are maintained and the risk of degradation by short channel effects is reduced.

Abstract: The present invention provides a device for frequency-selective detection of electromagnetic radiation in the terahertz region of the electromagnetic spectrum using a lateral semiconductor superlattice, a metal antenna attached to the lateral semiconductor superlattice; and a resonator comprising two mirrors and a substrate. A method for detecting electromagnetic radiation using the device is also provided.

Abstract: An organic electroluminescent (EL) device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising a polymer disposed on the first electrode, a second electrode formed on the emission layer, and a metal infiltration preventing layer, formed between the emission layer and the second electrode, for preventing a second electrode forming metal from infiltrating into the emission layer. A manufacturing method includes operations to prepare the EL device.

Abstract: Formed on a glass substrate is an EL element including an anode, an organic light emitting layer, and a cathode. A first protective film is formed on a surface of the EL element to cover the EL element through a dry process. A second protective film is then formed on a surface of the first protective film to cover the first protective film by using polysilazane through a wet process. Even if an uncovered portion is left in the first protective film owing to the existence of a foreign matter thereon, the second protective film covers the uncovered portion to avoid intrusion of oxygen or other gases, moisture, etc. into the EL element from the outside.

Abstract: An organic TFT including a gate electrode, a source electrode and a drain electrode insulated from the gate electrode, and an organic semiconductor layer that is insulated from the gate electrode and contacts the source electrode and the drain electrode. The length of portions of edges of the source electrode, which contact the organic semiconductor layer and face the drain electrode, is greater than the length of portions of edges of the drain electrode, which contact the organic semiconductor layer and face the source electrode to reduce the contact resistance between the source electrode and the organic semiconductor layer.

Abstract: A new compound derivative that can be used to form a unit molecular film as a rectifier in a molecular electronic device, a new rectifying compound (4,5,9,10-tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester and its derivative (4,5,9,10-Tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester, and methods of synthesizing the compounds are provided.

Abstract: A test structure and a test methodology are provided for testing metal-insulator-metal (MIM) capacitor structures under high temperatures at the wafer level. The test structure includes a resistor formed on a region of dielectric isolation material formed in a semiconductor substrate. The MIM capacitor is formed over the resistor and separated therefrom by dielectric material. A metal thermometer, formed from the same material as the plates of the MIM capacitor, is placed above the resistor and in close proximity to the capacitor. High current is forced through the resistor, causing both the metal thermometer and the MIM capacitor to heat up along with the resistor. The change in resistance of the metal thermometer is monitored. Using the known temperature coeffecient of resistance (TCR) for the metal used to form both the capacitor and the thermometer, changes in the measured resistance of the metal thermometer are converted to temperature.

Abstract: A semiconductor substrate, probe card, and methods for stressing and testing dies on a semiconductor substrate are provided. The semiconductor substrate, typically a semiconductor wafer, comprises dies disposed thereon and a redistribution layer (RDL) for routing signals from a test circuit into dies on the substrate that are not currently under probe. The RDL includes look-ahead contacts associated with a first die set that are electrically connected by traces to dies of a second die set. Upon contact of elements of the probe tester with the look-ahead contacts, required Vcc power, GND ground potential and signals from the probe tester are routed through the traces to the die of the die set not currently under probe. The dies can comprise a built-in self-stress (BISS) circuit and/or a built-in self-test (BIST) circuit for implementing a stress or test sequence.

Abstract: A flat panel display and fabrication method thereof. The present invention uses four etching processes to define a second conducting layer, a doped semiconductor layer and a semiconductor layer. The first etching process is a wet etching using a first resist layer to etch the second conducting layer. The second etching process is executed with an etchant comprising oxygen to etch the doped semiconductor layer and the semiconductor layer, and the first resist layer undergoes ashing during etching so as to become a second resist layer with a channel pattern. The third etching process is another wet etching, and the second conducting layer is etched again using the second resist layer as the etching mask. The fourth etching process is executed to dry etch the doped semiconductor layer using the second resist layer as the etching mask.