Abstract: There are provided electrically conducting polymer compositions comprising an electrically conductive polymer or copolymer and an organic solvent wettable fluorinated acid polymer. Electrically conductive polymer materials are derived from thiophene, pyrrole, aniline and polycyclic heteroaromatic precursor monomers. Non-conductive polymers derived from alkenyl, alkynyl, arylene, and heteroarylene precursor monomers. The organic-solvent wettable fluorinated acid polymer is fluorinated or highly fluorinated and may be colloid-forming. Acidic groups include carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The compositions can be used in organic electronic devices.

Abstract: A conductive polymer of polyaniline (PANi), tetracyanoquinodimethane (TCNQ) and a transferrin family member. The conductive polymer can be used in conductometric assays, including biosensor devices. One particular transferrin family member provided in the polymer is lactoferrin.

Abstract: A method is disclosed for preparing an elastomeric base composition comprising: (I) mixing (A) a silicone base comprising a curable organopolysiloxane, (B) an optional crosslinking agent, (C) a cure agent in an amount sufficient to cure said organopolysiloxane; (II) mixing the product of step (I) with (D) a fluorocarbon elastomer, (E) an optional compatibilizer, (F) an optional catalyst, and (III) dynamically vulcanizing the organopolysiloxane, wherein the weight ratio of fluorocarbon elastomer (D) to silicone base (A) in the elastomeric base composition ranges from 95:5 to 30:70. The cured rubber compositions obtained from the elastomeric base compositions herein have good fuel resistance properties.

Abstract: A base for electric insulating oil comprising an esterification product from a C8-C20 higher fatty acid and a C6-C14 branched aliphatic monohydric alcohol; or a base for electric insulating oil comprising an esterification product from a mixed fatty acid derived from palm oil and/or mixed fatty acid derived from soybean oil and a C1-C5 aliphatic monohydric alcohol or C6-C14 branched aliphatic monohydric alcohol. The thus provided base for electric insulating oil excels in viscosity, fluidity, chemical stability, etc. and is capable of satisfactorily exhibiting electrical characteristics of electric insulating oil.

Abstract: An ultraviolet absorber containing, as an active ingredient, a zinc oxide solid solution of which the surface of a crystal is chemically bonded to a silicic acid and which has an average secondary particle diameter of 1.5 ?m or less and a BET specific surface area of at least 40 m2/g and is represented by the formula (1), (Zn)1-xM3+x-?O.nSiO2 ??(1) wherein M3+ is at least one trivalent metal selected from Al, Fe and Ce, x is in the range of 0<x<0.2, n is in the range of 0.001<n<0.2 and ? is a cationic lattice defect, a process for the production thereof, a sun block cosmetic material containing the above ultraviolet absorber, an ultraviolet absorbable resin composition containing the above ultraviolet absorber, and use of the above resin composition as a packaging material.

Abstract: An equipment handling apparatus is described. The equipment handling apparatus includes a base and a mast coupled to the base, an equipment head coupled to and translatable along the mast, and a mounting device rotatably coupled to the equipment head. In this regard, the mast is aligned along a first axis, and the equipment head includes a rotatable head shaft defining a second axis that is non-parallel to the first axis. The mounting device includes a second shaft independently rotatable about a third axis non-parallel to the second axis. Motive means provide for translating the equipment head, rotating the head shaft, and for rotating the second shaft independent of the head shaft.

Abstract: A fence for retaining silt and providing a visual marker comprising a plurality of stakes, each stake comprising, a generally flat surface having a plurality of holes defined therein and spaced along at least a portion of the flat surface, a strip of fabric, comprising, a lower portion having a first visual indicia associated therewith, an upper portion having a second visual indicia associated therewith distinct from the color of the first portion, the upper and lower portions being connected; and, a plurality of fasteners for fastening the strip of fabric to the plurality of stakes. The fence preferably also includes a wire grid or mesh backing to provide additional strength and support to the lower portion fabric.

Abstract: The present invention provides a thermal switching element that has a quite different configuration from that of a conventional technique and can control heat transfer by the application of energy, and a method for manufacturing the thermal switching element. The thermal switching element includes a first electrode, a second electrode, and a transition body arranged between the first electrode and the second electrode. The transition body includes a material that causes an electronic phase transition by application of energy. The thermal conductivity between the first electrode and the second electrode is changed by the application of energy to the transition body.

Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.

Abstract: A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,?1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

Abstract: An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and the p-type cladding layer, the light-emitting portion being formed on a n-type substrate; and a p-type GaP current spreading layer formed on the light-emitting portion. The p-type GaP current spreading layer is doped with Mg and has a root mean square roughness Rms of 15 nm to 5 ?m on its surface.

Abstract: The present invention relates to 2-functionalized and 2,7-difunctionalized carbazoles and 2,7-carbazolenevinylene oligomers and polymers. More specifically, the present invention relates to a compound of Formula (I): wherein R1 is selected from the group consisting of H, alkyl, and aryl; and wherein R2 and R3 are independently selected from the group consisting of H, alkyl, formyl, hydroxymethyl, trityloxymethyl, acetonitrile, chloromethyl, methylphosphonate, methyltriphenylphosphonium and vinyl. The oligomers and polymers are used in field-effect transistors, light-emitting devices such as light-emitting diodes, and solar cells.

Abstract: Fluoranthene derivatives of the general formula I where the symbols have the following meanings: R1, R2, R3, R4, R5 are each hydrogen, alkyl, an aromatic radical, a fused aromatic ring system, a heteroaromatic radical or —CH?CH2, (E)- or (Z)-CH?CH—C6H5, acryloyl, methacryloyl, methylstyryl, —O—CH?CH2 or glycidyl; where at least one of the radicals R1, R2 and/or R3 is not hydrogen; X is an alkyl radical, an aromatic radical, a fused aromatic ring system, a heteroaromatic radical or a radical of the formula (I?) or an oligophenyl group; n is from 1 to 10 or, in the case of X=oligophenyl group, 1-20; with the proviso that R1, R2, R3 and X are not at the same time phenyl when R4 and R5 are hydrogen.

Abstract: In at least one embodiment of the invention, an OLED device is disclosed in which the surface of one or more layers of the OLED are conditioned with metal nano-particles such that they are disposed along the interface between adjacent layers.

Abstract: Techniques are described for forming a separating structure on an OLED device that is free from deformation. The separating structure prevents adjacent electrodes from contacting one another.

Abstract: An organic bistable device includes a first electrode, a second electrode, and an organic mixture layer, wherein the organic mixture layer is located between the first electrode and the second electrode. While a bias is applied between the first electrode and the second electrode of the bistable device, the doped metal material/particle is used as a mediator for injecting electrons. Therefore, both the writing/erasing cycle times and life time of an organic bistable device are increased. Moreover, the organic bistable device having an organic mixture layer with metal dopants possesses a relatively stable low conductance (off-current) state. Hence, by applying the voltage thereon, the organic bistable device can be well controlled to be turned on or turned off.

Abstract: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

Abstract: The present invention provides an organic electronic device using the compound of the formula (1) and a pyrene derivative having a new structure.

Abstract: An LCD panel includes a first substrate including a first substrate material, a plurality of thin film transistors (“TFTs”) formed on the first substrate material each having a drain electrode, and an organic layer formed on the plurality of TFTs which further includes a color filter layer, a second substrate disposed opposite to the first substrate and including a second substrate material, a main column spacer having a first end connected to the first substrate, and a second end connected to the second substrate, a sub column spacer having a first end connected to one of the first and second substrates, and a second end being spaced apart from the other one of the first and second substrates, and a recessed portion formed in at least one of the first and second substrates corresponding to the sub column spacer.

Abstract: The invention prevents a photocurrent due to external light and a variation in characteristics of transistors or a failure by a short circuit due to the influence of a back channel. A light shield film made of a nonconductive material is formed on an insulation substrate. A back gate insulation film is formed covering the light shield film. An active layer is formed on this back gate insulation film. A gate insulation film is formed covering the active layer, and a gate electrode is formed on the gate insulation film. The light shield film is disposed covering the active layer with the back gate insulation film interposed therebetween, having a function of shielding the active layer from external light entering through the insulation substrate.

Abstract: Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.

Abstract: The present invention provides an efficient test method and system for testing the IC package, such as BGA types of packages. With the present invention, manufacturer can have an easier way in testing various types of packages, including newer types. Manufacturer also can get the testing outcome which is more accurate. Furthermore, help the manufacturer to achieve a quite improvement in IC packaging process.

Abstract: An LSI design support apparatus includes a data acquisition section and an equal processing section. The data acquisition section acquires first position data concerning positions of a plurality of first electrodes provided along a side of a first substrate, and second position data concerning positions of a plurality of second electrodes provided along a side of a second substrate. The equal processing section sets connection relations between the plurality of the first electrodes and the plurality of the second electrodes such that each of the plurality of the first electrodes is connected to one of the plurality of the second electrodes which has a second relative position nearest to a first relative position of the each of the plurality of the first electrodes.

Abstract: A transparent thin film transistor (TFT) and a method of fabricating the same are provided. The transparent TFT includes transparent source and drain electrodes formed of transparent material, a transparent semiconductor activation layer that contacts the source and drain electrodes, that is formed of transparent semiconductor, and in which source and drain regions are formed, and a doping section provided between the transparent source and drain electrodes and the transparent activation layer to have the same doping type as that of the source and drain regions and to have doping concentration different from that of the source and drain regions. At this time, doping during the formation of the doping section is performed by an in-situ method in which a gas containing impurities is sprayed in the same apparatus as the apparatus used for the previous step.

Abstract: As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.

Abstract: According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Abstract: The present invention relates to a flat panel display having high picture quality, high flexibility and high flex-resistance. Specifically, the present invention provides a flat panel display having a plurality of pixels arranged in a matrix shape on a substrate, each of the plurality of pixels comprising a thin film transistor having a channel region containing nanowire, nanorod, nanoribbon, or nanotube, and a display element driven by the thin film transistor. Here, an axial direction of the nanowire, nanorod, nanoribbon, or nanotube is in the same direction as the source-drain direction of a channel region and the flat panel display can be bent so as to intersect with the source-drain direction.

Abstract: A termination value for a pin of a semiconductor device is set to a first value if a pin signal has a first logic state at an edge of a control signal, and to a second value if the pin signal has a second logic state at the edge of the control signal. Alternatively, a respective logic state of a first control signal is determined at an edge of a second control signal, and a respective logic state of the pin signal is determined at the edge of the second control signal. The termination value is set depending on such respective logic states.

Abstract: A liquid crystal display with reduced power consumption and a method of driving the same, in which a liquid crystal display includes a liquid crystal panel including a lower substrate and an upper substrate. The lower substrate has a display region with liquid crystal cells formed at intersections of a plurality of horizontally extending gate lines and a plurality of vertically extending data lines. The upper substrate has color filter regions formed at areas corresponding to the liquid crystal cells. The liquid crystal display includes a data driver for applying data signals to the plurality of data lines, such that the polarities of the data signals are inverted at intervals of at least three liquid crystal cells in a vertical direction and at intervals of one liquid crystal cell in a horizontal direction. The color filter regions adjacent to each other in the vertical direction are formed with color filters having different colors. Also provided is a method of driving the liquid crystal display.

Abstract: An array substrate of a liquid crystal display device includes a substrate, a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel area, a common line parallel to the gate line, a common electrode extending from the common line and including a plurality of vertical portions, a thin film transistor electrically connected to the gate line and the data line, the thin film transistor including a gate electrode connected to the gate line, a semiconductor layer over the gate electrode, a source electrode over the semiconductor layer and connected to the data line, and a drain electrode over the semiconductor layer and spaced apart from the source electrode, wherein a portion of the semiconductor layer partly covers a side of the gate electrode disposed between the data line and the drain electrode, and a pixel electrode in the pixel area, the pixel electrode connected to the drain electrode, and includes a plurality of vertical parts alternating with the

Abstract: A substrate for compound semiconductor device and a compound semiconductor device using the substrate are provided which allow a breakdown voltage to be high, cause little energy loss, and are suitably used for a high-electron mobility transistor etc. An n-type 3C—SiC single crystal buffer layer 3 having a carrier concentration of 1016-1021/cm3, a hexagonal GaxAl1-xN single crystal buffer layer (0?x<1) 4, an n-type hexagonal GayAl1-yN single crystal layer (0.2?y?1) 5 having a carrier concentration of 1011-1016/cm3, and an n-type hexagonal GazAl1-zN single crystal carrier supply layer (0?z?0.8, and 0.2?y?z?1) 6 having a carrier concentration of 1011-1016/cm3 are stacked in order on an n-type Si single crystal substrate 2 having a crystal-plane orientation {111} and a carrier concentration of 1016-1021/cm3. A back electrode 7 is formed in the back of the above-mentioned substrate 2 and a surface electrode 8 is formed on a surface of the above-mentioned carrier supply layer 6.

Abstract: A method is described for forming a nonvolatile one-time-programmable memory cell having reduced programming voltage. A contiguous p-i-n diode is paired with a dielectric rupture antifuse formed of a high-dielectric-constant material, having a dielectric constant greater than about 8. In preferred embodiments, the high-dielectric-constant material is formed by atomic layer deposition. The diode is preferably formed of deposited low-defect semiconductor material, crystallized in contact with a silicide. A monolithic three dimensional memory array of such cells can be formed in stacked memory levels above the wafer substrate.

Abstract: A light-emitting diode chip (LED chip) including a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode is provided. The electrostatic conducting layer is disposed on the substrate, while the first type doped semiconductor layer is disposed on a partial area of the electrostatic conducting layer. Besides, the active layer is disposed on a partial area of the first type doped semiconductor layer, while the second type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is disposed on the first type doped semiconductor layer, while the second electrode is disposed on the second type doped semiconductor layer. The LED chip of the present invention has an electrostatic conducting layer, which protects the LED from electrostatic discharge damage (ESD damage).

Abstract: A light emitting device is proposed, which emits light while connected to the power. The light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection. The light emitting device of the present invention has advantages of short current path, low series thermal resistance and low cost. In addition, the depth of the recess can further be increased to improve light collecting efficiency.

Abstract: A composite semiconductor light-emitting device includes a first semiconductor element portion made of a first semiconductor material and a second semiconductor element portion made of a second semiconductor material different from the first semiconductor material. The first semiconductor element portion has a first semiconductor layered structure, and the second semiconductor element portion has a second semiconductor layered structure. The first semiconductor element portion has a plurality of light-emitting regions that emit lights of different wavelengths. The second semiconductor element portion has at least one light-emitting region that emits light whose wavelength is different from the lights emitted by the light-emitting regions of the first semiconductor element portion. The light-emitting regions of the first semiconductor element portion and at least one light-emitting region of the second semiconductor element portion are electrically connected to each other.

Abstract: A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

Abstract: A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Abstract: A light emitting diode (LED) element includes a substrate, a first light emitting unit, a second light emitting unit, a first electrode couple and a second electrode couple. The first light emitting unit is disposed on the substrate. The second light emitting unit is disposed on the first light emitting unit. The first electrode couple is disposed on and electrically connected with the first light emitting unit. The second electrode couple is disposed on and electrically connected with the second light emitting unit. The LED element is adapted for being driven by an alternate current for having the first light emitting unit and the second light emitting unit alternately emitting lights, thus obtaining a white light with a proper color temperature.

Abstract: In a light-emitting device in which light-emitting elements that emit light having the same color are arrayed in a matrix on a pixel-forming surface of a substrate and the light emitted from the light-emitting elements is emitted from a surface of the substrate opposite to the pixel-forming surface, the light-emitting device includes a recess provided on the side of the light-emitting surface of the substrate and in an area corresponding to the area where the light-emitting elements are provided, and a color filter that selectively transmits the light emitted from the light-emitting elements and that is embedded in the recess.

Abstract: A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 ?. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

Abstract: A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.

Abstract: The invention relates to a housing for at least two radiation-emitting components, especially LEDs, comprising a system carrier (1) and a reflector arrangement (2) arranged on said system carrier (1). Said reflector arrangement comprises a number of reflectors that are respectively used to receive at least one radiation-emitting component and are fixed together by means of a holding device (4).

Abstract: A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

Abstract: A photodetector includes a charge carrier collector and a charge carrier concentrator that redirects onto the collector charge carriers that are not initially headed towards the collector.

Abstract: A light-emitting diode (10) includes a light-emitting chip (12) and a light-permeable cover (16) arranged over the light-emitting chip. The cover has a central convex portion (162) and a peripheral portion (164) surrounding the convex portion. The convex portion is positioned above the light-emitting chip. The peripheral portion has an inner surface (166) and an outer surface (168). The outer surface is configured for reflecting and directing light emitted from the light-emitting chip to exit through the inner surface. By optical design with the convex portion and the peripheral portion of the cover, the light utilization ratio of the light-emitting diode is enhanced. Furthermore a light source device (40) using the light-emitting diode is also provided.

Abstract: A semiconductor light-emitting device can include a submount on which a semiconductor light-emitting element is mounted. The device can have a high light utilization efficiency with high reliability and can achieve a reduction in manufacturing cost as well as a decrease in size. The submount can have a reverse trapezoidal cross section having an upper surface that is larger than a bottom surface of the semiconductor light-emitting element. An adhesive can be used to fix the submount to the base board such that, when the submount is observed from above the semiconductor light-emitting element, the adhesive is not seen from above. In this state, the semiconductor light-emitting element can be connected to the base board via a bonding wire.

Abstract: To provide a semiconductor device 10, which is thin, compact, and excellent in mechanical strength and humidity resistance. Semiconductor device 10A has a configuration such that in semiconductor device 10A, wherein an optical semiconductor element 14, having a light receiving part or a light emitting part, is sealed in a sealing resin 13, a cover layer 12, covering the top surface of optical semiconductor element 14, is exposed from the top surface of sealing resin 13. Thus in comparison to a related-art example with which the entirety is sealed by a transparent resin, sealing resin 13 can be formed thinly and the thickness of the entire device can be made thin. Furthermore, semiconductor device 10 is arranged using a sealing resin having a filler mixed in. A semiconductor device that is excellent in mechanical strength and humidity resistance can thus be arranged.

Abstract: The invention relates to composite articles comprising a substrate and additional layers on the substrate. According to one example, the layers are selected so that the difference in the coefficient of thermal expansion (CTE) between the substrate and a first layer on one side of the substrate is substantially equal to the CTE difference between the substrate and a second layer on the other side of the substrate. The stress caused by the CTE difference and/or shrinkage on one side of the substrate during heating or cooling is balanced by the stress caused by the CTE difference on the other side of the substrate during heating or cooling. Such stress balancing can reduce or minimize curling of the substrate.

Abstract: A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.