Patents Issued in April 12, 2007
-
Publication number: 20070080317Abstract: For the purpose of preventing the degradation of the piezoelectric strain properties when Cu is used for internal electrodes, there is provided a piezoelectric ceramic composition including: a composite oxide, as a main constituent thereof, represented by (Pba-bMeb) [(Zn1/3Nb2/3)xTiyZrz]O3 with the proviso that 0.96?a?1.03, 0?b?0.1, 0.05?x?0.15, 0.25?y?0.5, 0.35?z?0.6, and x+y+z=1, and Me represents at least one selected from Sr, Ca and Ba; and at least one selected from Co, Mg, Ni, Cr and Ga as a first additive to the main constituent in a content of 0.5% by mass or less (not inclusive of 0) in terms of oxide, wherein an electrode made of Cu is to be disposed on the piezoelectric ceramic composition.Type: ApplicationFiled: October 3, 2006Publication date: April 12, 2007Applicant: TDK CORPORATIONInventors: Kumiko Iezumi, Junichi Yamazaki, Takeo Tsukada, Norimasa Sakamoto, Tomohiro Sogabe, Masaru Nanao
-
Publication number: 20070080318Abstract: The present invention discloses ternary mixtures of fluoroethane (HFC-161), pentafluoroethane (HFC-125) and trifluoromethane (HFC-143a) used as environmentally friendly alternative refrigerants to R502. The mass ratios of the mixture of each component are 1-30%, 35-65% and 5-64%, respectively. Its ODP is zero, with no depletion potential to the ozone layer. Its GWP is very small. Its working pressures and pressure ratios are close to those of R502. Its thermodynamic properties such as cooling capacity per unit mass and discharge temperature are better than that of R502. It can be used as a potential substitute refrigerant for R502 with few changes to system components. In addition, less charge mass is needed according to the present invention.Type: ApplicationFiled: April 8, 2004Publication date: April 12, 2007Inventors: Zhikai Guo, Guangming Chen, Yongmei Xuan, Xinzheng Guo
-
Publication number: 20070080319Abstract: A corrosion inhibitor for magnesium and/or magnesium alloy containing, as an effective component, a least one kind of compound selected from the group consisting of a compound of the formula (1) and a compound of the formula (2) and salts thereof, and a process for producing components or parts made of magnesium and/or magnesium alloy using the corrosion inhibitor wherein R1 is a hydrogen atom, or C1-4 alkyl, R2 is a hydrogen atom, C1-4 alkyl, mercapto or hydroxy, R3 is a hydrogen atom, C1-4 alkyl or hydroxy, A is —N? or —C(R4)?, R4 is a hydrogen atom or amino.Type: ApplicationFiled: November 10, 2003Publication date: April 12, 2007Inventors: Kazunori Fukumura, Yuhua Yu, Masaya Kajimoto, Hiroshi Hama, Takashi Hamauzu, Hiroshi Yagi
-
Publication number: 20070080320Abstract: This invention provides a cure promoter composition with suppressed solids forming tendencies. This composition is formed from components which prior to use in forming the composition are comprised of: a) a major amount of N-methyl-N-(2-hydroxyethyl)-p-toluidine or N,N-bis(2-hydroxyethyl)-p-toluidine, or both; and b) a minor solids formation suppressing amount of at least one liquid fully-esterified phosphate ester having at least two, and preferably three, aryl ester groups and one or two phosphorus atoms in the molecule.Type: ApplicationFiled: September 19, 2006Publication date: April 12, 2007Applicant: ALBEMARLE CORPORATIONInventor: Wenfeng Kuang
-
Publication number: 20070080321Abstract: This invention provides a cure promoter composition with suppressed solids forming tendencies. The composition is formed from components which prior to use in forming the composition are comprised of: a) N-methyl-N-(2-hydroxyethyl)-p-toluidine or N,N-bis(2-hydroxyethyl)-p-toluidine, or both; and b) at least one liquid monomeric ester of acrylic acid and/or at least one liquid monomeric ester of methacrylic acid; a) and b) being proportioned such that the a):b) weight ratio is in the range of about 50:50 to about 99:1.Type: ApplicationFiled: September 19, 2006Publication date: April 12, 2007Applicant: ALBEMARLE CORPORATIONInventor: Wenfeng Kuang
-
Publication number: 20070080322Abstract: The present disclosure includes a method that allows one to obtain high quality alignment of nematic or smectic liquid crystal (LC) polymer glasses in thin films. The present disclosure also includes thin films of aligned smectic or nematic LC main-chain polymer glasses, including aligned chiral smectic C* ferroelectric LC main-chain polymer glasses. The disclosure also includes electro-optical devices, including electro-optical devices comprising aligned chiral smectic C* ferroelectric LC main-chain polymer glasses.Type: ApplicationFiled: August 23, 2004Publication date: April 12, 2007Applicant: THE REGENTS OF THE UNIVERSITY OF COLORADOInventor: David Walba
-
Publication number: 20070080323Abstract: The present invention relates to compositions containing at least one cationic peptide active agent, at least one neutral structure forming amphiphile, at least one anionic structure forming amphiphile and optionally at least one solvent wherein the composition is in the form of a non-lamellar phase structure and/or forms a non-lamellar phase structure on exposure to body fluids. The invention also relates to methods for protecting peptides from enzymic degredation in vivo and to compositions in which the peptide active agent is so protected.Type: ApplicationFiled: November 5, 2004Publication date: April 12, 2007Inventors: Fedrik Joabsson, Fredrik Tiberg
-
Publication number: 20070080324Abstract: The invention relates to a liquid-crystalline medium based on a mixture of polar compounds of negative dielectric anisotropy, which comprises at least one compound of the formula I in which R11, R12, A1, A2, Z1, Z2, m and n are as defined in Claim 1, and to the use thereof for an active-matrix display based on the ECB, PALC or IPS effect.Type: ApplicationFiled: September 22, 2004Publication date: April 12, 2007Inventors: Melanie Klasen-Memmer, Lars Lietzau, Matthias Bremer
-
Publication number: 20070080325Abstract: The invention is directed to the use of a liquid crystal composition in a bistable liquid crystal device and especially in a single polariser reflective or transflective zenithal bistable nematic liquid crystal device as well as a bistable liquid crystal device comprising the liquid crystal composition.Type: ApplicationFiled: April 13, 2004Publication date: April 12, 2007Inventors: Mark Goulding, Matthew Francis, John Jones, Stephen Beldon
-
Publication number: 20070080326Abstract: Phosphor from the class of the oxynitridosilicates, having a cation M which is doped with divalent europium, and having the empirical formula M(1-c)Si2O2N2:Dc, where M=Sr or M=Sr(1-x-y)BaYCax with x+y<0.5, the oxynitridosilicate completely or predominantly comprising the high-temperature-stable modification HT.Type: ApplicationFiled: September 24, 2004Publication date: April 12, 2007Applicant: PATENT-TREUHAND-GESELLSCHAFT FUR ELEKTRISCHE GLUHInventors: Tim Fiedler, Frank Jermann
-
Publication number: 20070080327Abstract: An inorganic EL element with a high luminance and an improved life can be produced by using a luminescent material which can be produced by an explosion method.Type: ApplicationFiled: October 11, 2005Publication date: April 12, 2007Applicant: T. Chatani Co., Ltd.Inventors: Tadashi Ueda, Seikoh Yamauchi, Jiro Kanamori, Yoshisada Hayashi
-
Publication number: 20070080328Abstract: The invention relates to zirconium-based alloys and methods for manufacturing thereof and may be used in nuclear power engineering. The invention, as claimed, solves the task of obtaining a zirconium-based alloy used for manufacturing fuel rods for the nuclear reactor core, which possess improved engineering and operational properties. The said zirconium-based alloy contains its components in the following weight percent ratio: niobium—0.9-1.1, oxygen—0.05-0.09, zirconium—the rest, and has the structure consisting of alpha-zirconium with oxygen irregularity zones not exceeding 30 nanometers, zirconium sub-oxide of non-stoichiometric composition, and beta-niobium. The inventive method of manufacturing the said alloy includes making stock of zirconium-containing material and niobium pentoxide as oxygen-containing and niobium-containing materials, stock treatment and manufacturing an ingot having the above composition.Type: ApplicationFiled: December 22, 2003Publication date: April 12, 2007Inventors: Sergey Zavodchikov, Valentina Arzhakova, Oleg Bocharov, Lev Zuev, Vladimir Kotrekhov, Vladimir Rozhdestvenskiy, Olga Tarasevich, Vladimir Philippov
-
Publication number: 20070080329Abstract: An electrically conductive paste used for forming wiring conductors, such as via holes (15) disposed on a multilayer ceramic substrate (11), is provided, wherein the temperature range, in which sintering is effected in a firing step, can be controlled relatively optimally. The electrically conductive paste contains a metal powder, a grass frit, and an organic vehicle. An inorganic component, which is not sintered at a sintering temperature capable of sintering the ceramic layers (12) included in the multilayer ceramic substrate (11) in the firing step, is disposed on particle surfaces of the metal powder. The glass frit has a softening point 150° C. to 300° C. lower than the above-described sintering temperature.Type: ApplicationFiled: November 10, 2004Publication date: April 12, 2007Inventors: Masato Nomiya, Jun Urakawa
-
Publication number: 20070080330Abstract: A synergistic flame retardant combination includes (a) a phosphorus salt having the formula wherein Md+ is a metal ion or an onium ion; d is 1, 2, 3, or 4 according to the identity of M and its oxidation state; each occurrence of R1 and R2 is independently C1-C18 hydrocarbyl; and each occurrence of m and n is independently 0 or 1; and (b) a phosphine compound selected from trihydrocarbylphosphines, trihydrocarbylphosphine oxides, and combinations thereof. Polymer compositions utilizing the flame retardant combination are described.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventors: Edward Peters, Christina Braidwood
-
Publication number: 20070080331Abstract: A rope loop (15) sheathed by at least one protective sleeve can be anchored in the floor (12) with its two rope ends (13, 14) in a wire rope anchor, in particular for rockfall or avalanche protection systems. The rope ends (13, 14) are pressed together with a connection piece (20). This connection piece (20) comprises a connection part (22) for connecting a longitudinal element (25) that can also be anchored in the floor (12) on the side facing away from the rope ends (13, 14). In this way the wire rope anchor can then be affixed to conventional anchor rods representing the longitudinal elements. The drill pipe can also be left to remain in the floor following drilling, and the wire rope anchor can be screwed onto this drill pipe equipped with a screw thread.Type: ApplicationFiled: September 26, 2006Publication date: April 12, 2007Inventor: Andrea Roth
-
Publication number: 20070080332Abstract: A picket fence system using two part parallel rails to enclose and secure intermittent pickets, which can be assembled without screws or fasteners is described.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventor: Ronald Allen
-
Publication number: 20070080333Abstract: A fence system having multiple components enabling assembly of corner and other fence components to which fencing wire may be attached. The primary components are a vertical post with at least one post flange, lateral and angle braces having end-flanges, extension flanges with end-flanges, gate flanges with end-flanges, angle flanges, end-caps, and fasteners for attaching end-flanges to the post flanges.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventor: Lin Perry
-
Publication number: 20070080334Abstract: An engineered fence system having multiple components enabling assembly of corner and other fence components to which fencing wire may be attached. The primary components are a vertical post with at least one post flange, lateral and angle braces, gate flanges with end-flanges, angle flanges, end-caps, and fasteners for attaching end-flanges to the post flanges.Type: ApplicationFiled: February 16, 2006Publication date: April 12, 2007Inventor: Lin Perry
-
Publication number: 20070080335Abstract: One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through a surface transformation process. Each of the voids has an interior surface that includes dangling bonds such that the plurality of voids getter impurities from the at least one device region. The structure includes a transistor formed using the device region. The transistor includes a gate dielectric over the device region, a gate over the gate dielectric, and a first diffusion region and a second diffusion region formed in the device region. The first and second diffusion regions are separated by a channel region formed in the device region between the gate and the proximity gettering region.Type: ApplicationFiled: November 30, 2006Publication date: April 12, 2007Inventors: Leonard Forbes, Joseph Geusic
-
Publication number: 20070080336Abstract: Image sensors and methods of manufacturing an image sensor are disclosed. A disclosed photo diode may receive short wavelength light in its depletion region without exhibiting defective phenomenon such as noise and dark current. In the illustrated example, this performance is achieved by forming a trench type light-transmission layer to occupy a major surface of the photo diode so as to reduce the area available for defects on the surface of the semiconductor substrate. As a result of this reduction, the depletion region formed upon the operation of the sensor may extend toward the surface of the semiconductor substrate without concerned for defects. The image sensor may be manufactured without forming a blocking layer in connection with a silicide layer.Type: ApplicationFiled: December 5, 2006Publication date: April 12, 2007Inventor: Hoon Jang
-
Publication number: 20070080337Abstract: A radiation-emitting component (1) comprising a radiation source, a housing body (6), a radiation exit side (16), an underside (17) which is opposite the radiation exit side (16), a side surface (18) which connects the radiation exit side (16) and the underside (17), and at least one first contact region (2a, 3a). The first contact region (2a, 3a) extends along the side surface (18) and is in the form of a partial region of a carrier (23) that runs outside the housing body (6).Type: ApplicationFiled: September 26, 2006Publication date: April 12, 2007Applicant: Osram Opto Semiconductors GmbHInventor: Jorg Sorg
-
Publication number: 20070080338Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.Type: ApplicationFiled: December 12, 2006Publication date: April 12, 2007Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Tsun Neng Yang, Shan Lan
-
Publication number: 20070080339Abstract: Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the v=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. Time tilted interferometry provides an extension of the computational power (to universal) within the context of topological protection. A known set of universal gates has been realized by topologically protected methods using “time-tilted interferometry” as an adjunct to the more familiar method of braiding quasi-particles. The method is “time-tilted interferometry by quasi-particles.” The system is its use to construct the gates {g1, g2, g3}.Type: ApplicationFiled: October 7, 2005Publication date: April 12, 2007Applicant: Microsoft CorporationInventors: Michael Freedman, Chetan Nayak
-
Publication number: 20070080340Abstract: The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel junctions 125, 130 between the source and drain. The device further includes a fixed-gate electrode 135 located adjacent the quantum island 120. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device 300, and a transistor circuit 800 that include a single-electron device 810.Type: ApplicationFiled: December 11, 2006Publication date: April 12, 2007Applicant: Texas Instruments IncorporatedInventor: Christoph Wasshuber
-
Publication number: 20070080341Abstract: Systems, methods and apparatus for factoring numbers are provided. The factoring may be accomplished by creating a factor graph, mapping the factor graph onto an analog processor, initializing the analog processor to an initial state, evolving the analog processor to a final state, and receiving an output from the analog processor, the output comprising a set of factors of the number.Type: ApplicationFiled: July 10, 2006Publication date: April 12, 2007Inventors: William Macready, Johnny Jone Kuan
-
Publication number: 20070080342Abstract: Process for preparing tris-ortho-metallated iridium complexes of the formula (I) where R1, R2, R3, R4, R5, R6 and X have the meanings given in the description, Ir complexes which can be prepared by the process of the invention, the use of the Ir complexes as emitter molecule in organic light-emitting diodes (OLEDs), a light-emitting layer comprising the Ir complexes, an OLED comprising this light-emitting layer and an apparatus comprising an OLED according to the present invention.Type: ApplicationFiled: April 30, 2004Publication date: April 12, 2007Applicant: BASF AktiengesellschaftInventors: Markus Bold, Peter Erk, Mairi Haddow, Ingolf Hennig, Hans-Werner Schmidt, Markus Bate, Mukundan Thelakkat
-
Publication number: 20070080343Abstract: The present invention relates to organic semiconductors which contain structural units L=X and in addition structural units which emit light from the triplet state. The materials according to the invention are more soluble and easier to synthesise and are therefore more suitable for use in organic light-emitting diodes than comparative materials in accordance with the prior art.Type: ApplicationFiled: October 21, 2004Publication date: April 12, 2007Inventors: Susanne Heun, Rene Scheurich, Arne Busing, Aurelie Ludemann, Anja Gerhard, Philipp Stossel, Horst Vestweber
-
Publication number: 20070080344Abstract: A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.Type: ApplicationFiled: October 29, 2004Publication date: April 12, 2007Inventors: Jin-Hong Kim, Chong-Chul Chai, Kyoung-Ju Shin, Joon-Hak Oh, Sung-Jin Hong
-
Publication number: 20070080345Abstract: Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.Type: ApplicationFiled: June 14, 2006Publication date: April 12, 2007Inventors: Won Joo, Kwang Lee, Sang Lee, Chulhee Kim
-
Publication number: 20070080346Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a first signal line disposed on the substrate; a second signal line intersecting the first signal line; a source electrode connected to the first signal line; a drain electrode separated from source electrode; an organic semiconductor member connected to source electrode and drain electrode; a pixel electrode connected to drain electrode; and a passivation layer disposed on pixel electrode and having light-induced alignment.Type: ApplicationFiled: October 4, 2006Publication date: April 12, 2007Inventors: Bo-Sung Kim, Kyu-Sik Kim, Jung-Han Shin, Mun-Pyo Hong
-
Publication number: 20070080347Abstract: The test pattern according to the present invention consists of an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a red color filter formed on the insulating film, a planarization layer formed on the insulating film and the red color filter, and a number of micro-lenses formed on the planarization layer.Type: ApplicationFiled: October 11, 2006Publication date: April 12, 2007Inventors: Eun Cho, Kee Kim
-
Publication number: 20070080348Abstract: An active device array substrate is provided. The active device array substrate comprises a substrate, multiple first lines, second lines, active devices, pixel electrodes and common lines. The first lines and second lines are disposed on the substrate and they form multiple pixel regions on the substrate. The active devices are respectively disposed in the pixel regions and each of the active devices is electrically connected to a first line and a second line, respectively. The pixel electrodes are respectively disposed in the pixel regions and each of the pixel electrodes is electrically connected to an active device, respectively. The common lines and first lines are roughly parallel and they are staggeringly disposed on the substrate. Each of the common lines has multiple branches which extend outside from their edges of two sides, and each of these branches is partly overlapped with the second lines.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventors: Ming-Zen Wu, Chien-Chih Jen
-
Publication number: 20070080349Abstract: The present invention relates to a substrate for a liquid crystal display device and a liquid crystal display device having the substrate, an object of the invention is to provide such a substrate for a display device that can be obtained by a simple production method with high reliability, and a liquid crystal display device having the same. A substrate for a display device contains: an accumulated electrode having an accumulated structure containing a lower layer formed on a substrate, and a upper layer containing ZnO and formed on the lower layer; an insulating film covering the accumulated electrode; a contact hole opening in the insulating film on the accumulated electrode; and a pixel electrode formed on the insulating film and being connected directly to the upper layer of the accumulated electrode through the contact hole.Type: ApplicationFiled: May 25, 2006Publication date: April 12, 2007Applicant: Sharp Kabushiki KaishaInventors: Atsuyuki Hoshino, Katsunori Misaki, Akihiro Matsui, Hideya Hashii
-
Publication number: 20070080350Abstract: A flexible display panel according to an embodiment of the present invention includes a flexible substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the substrate, a semiconductor layer formed on the gate insulating layer and disposed substantially on the entire gate electrode, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The patterning of the semiconductor layer to form a second semiconductor member may include coating a photoresist film on a first semiconductor member, exposing the photoresist film to light from a back of the substrate, wherein the gate electrode is used as a light blocking mask, developing the exposed photoresist film to form a photoresist pattern having the same planar size as the gate electrode, and etching the semiconductor layer using the photoresist pattern as an etching mask.Type: ApplicationFiled: October 10, 2006Publication date: April 12, 2007Inventors: Hong-Kee Chin, Sang-Gab Kim, Tae-Hyung Hwang, Min-Seok Oh, Yu-Gwang Jeong, Seung-Ha Choi
-
Publication number: 20070080351Abstract: A display device comprises a first substrate which has a line-forming surface, a second substrate which is arranged opposite to the line-forming surface by a gap interposed and has peripheral edge bonded to the first substrate, a plurality of display elements which are provided between the first substrate and the second substrate, a plurality of lines which are formed on the line-forming surface, extend to the peripheral edge of the line-forming surface and supply a drive voltage to the display elements, and a drive circuit substrate which is arranged at the peripheral edge of the line-forming surface and on which drive circuit is mounted.Type: ApplicationFiled: December 12, 2006Publication date: April 12, 2007Inventors: Miki MORI, Kaoru Koiwa
-
Publication number: 20070080352Abstract: A LED chip includes a substrate, a semiconductor layer, a micro-rough layer, a first electrode and a second electrode. The semiconductor layer is disposed on the substrate, the micro-rough layer is disposed in the semiconductor layer, or between the semiconductor layer and the substrate, or on an upper surface of the semiconductor layer. Both the first electrode and the second electrode are disposed on the semiconductor layer. The first electrode is electrically insulated from the second electrode. In this way, the above-described LED chip has better luminous efficiency.Type: ApplicationFiled: January 20, 2006Publication date: April 12, 2007Inventors: Liang-Wen Wu, Ming-Sheng Chen, Ya-Ping Tsai, Fen-Ren Chien
-
Publication number: 20070080353Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.Type: ApplicationFiled: October 6, 2006Publication date: April 12, 2007Inventors: Hyuk Lee, Hyun Kim, Dong Kim, Hyoun Shin
-
Publication number: 20070080354Abstract: The present invention relates to a combined light emitting diode (LED) package structure and a fabricating method for fabricating the same. The combined LED package structure includes an LED chip, a conductive structure and an encapsulant. The encapsulant encapsulates the LED chip and a portion of the conductive structure. The conductive structure has a thick metal member and a thin metal member. The thick metal member is used for carrying the LED chip, provide heat absorbing and heat dissipating paths to the LED chip, the bottom and a portion of the lateral side thereof are exposed to the outside of the encapsulant to increase heat dissipating area. The thin metal member is electrically connected to the LED chip via at least two conductive leads which are extended to a region outside of the encapsulant to serve as outside electrodes of the LED package structure.Type: ApplicationFiled: October 6, 2006Publication date: April 12, 2007Inventors: Ming-Yao Lin, Ming-Te Lin, Sheng-Pan Huang, Chia-Chang Kuo, Chiu-Ling Chen
-
Publication number: 20070080355Abstract: An alternating current light-emitting device and the fabrication method thereof is disclosed. The alternating current light-emitting device includes at least one alternating current micro-die light-emitting module formed on a substrate and composed of at least two micro-dies connected to one another. The micro-dies, each includes at least two active layers, are electrically connected by a conductive structure, such that the active layers of the micro-dies take turns emitting light during positive and negative half cycles of alternating current, thereby providing a full-scale light-emitting area for all-time light emission.Type: ApplicationFiled: May 12, 2006Publication date: April 12, 2007Applicant: Industrial Technology Research InstituteInventors: Ming-Te Lin, Hsi-Hsuan Yen, Wen-Yung Yeh, Ming-Yao Lin, Sheng-Pan Huang
-
Publication number: 20070080356Abstract: A display device and a method for manufacturing the display device are provided. The display device includes an organic layer on an auxiliary wiring is removed with high precision by one operation and, thereby, the yield and the productivity are improved. A lower electrode is formed by patterning in each pixel on a substrate. An auxiliary wiring including a light absorption layer is formed between individual pixels. An organic layer is formed on the substrate while covering the lower electrodes. Laser irradiation is conducted from the organic layer side, the laser light is converted to heat in the light absorption layer exposed at a portion under the organic layer, and the organic layer portion above the light absorption layer is removed selectively. An upper electrode is formed on the organic layer and is connected to the light absorption layer portion of the auxiliary wiring.Type: ApplicationFiled: August 10, 2006Publication date: April 12, 2007Applicant: SONY CORPORATIONInventors: Tetsuo Nakayama, Takanori Shibasaki, Nobuo Ozawa, Eisuke Matsuda, Takashi Hirano, Tadashi Ishibashi, Yoichi Tomo, Keisuke Matsuo
-
Publication number: 20070080357Abstract: An LED is mounted on a mounting portion of a lead frame with its light-emitting portion facing an aperture. Wires that connect the LED to lead portions of the lead frame are placed on the side on which the LED is mounted. A light-transmitting resin, which transmits light emitted from the LED, is placed on the side opposite from the LED mounted side of the lead frame. A low-stress resin, which seals the LED and the wire, is placed on the LED-mounted side of the lead frame. A crack prevention structure is constituted of bent portions that are provided at the lead portion and bent toward the LED-mounted side, low-stress resin portions located on the side opposite from the LED-mounted side with respect to the bent portions, and end portions of the light-transmitting resin put in contact with the low-stress resin portions.Type: ApplicationFiled: October 13, 2004Publication date: April 12, 2007Applicant: Sharp Kabushiki KaishaInventor: Yorishige Ishii
-
Publication number: 20070080358Abstract: There is provided a white light emitting device including a light emitting chip, which can emit a first light having a wavelength between 340 nm and 495 nm; an organic phosphor layer, which is formed by applying an organic polymer on the output surface of the light emitting chip using coating, screen printing, offset printing, sputtering, dripping, casting, adhering, or vacuum evaporation method; and an encapsulation layer embedded with a plurality of nanograde crystalline grains, which encloses the light emitting chip and the organic phosphor layer, wherein the first light emitted from the light emitting chip can excite the organic phosphor layer, which subsequently emits a second light having a wavelength between 530 nm and 580 nm, and the second light and the first light are mixed within the encapsulation layer to produce a white light with excellent color uniformity and color rendering outwards from the encapsulation layer.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Applicant: Luminoso Photoelectric Technology Co.Inventor: Kai-Shyong Tsai
-
Publication number: 20070080359Abstract: A plasma display apparatus comprises a plasma display panel comprising an electrode, a drive board and a connection unit adhered to a terminal of the drive board and electrically connected to the electrode.Type: ApplicationFiled: July 5, 2006Publication date: April 12, 2007Inventor: Tae Hwang
-
Publication number: 20070080360Abstract: A LED (Light Emitting Diode) substrate and packaging for a single diode or a diode array is described. The substrate includes an integral reflector(s) for the diode(s) in the form of a shaped cavity (or cavities) to house the diode die(s). The reflector cavity walls can optionally be plated with a reflective material and may include a molding material to serve as lens and sealant. Also described is a method for building a substrate with direct metal connection of low thermal path between a die and a bottom surface of the substrate. Another embodiment is for two electrical traces crossing each other without the need for a two layer interconnect structure. The substrate and reflector structures are built of aluminum-aluminum oxide composition applying a technology known in the art as ALOX technology. The resulting substrate and packaging afford the required electrical interconnections and enhanced thermal performance while maintaining excellent mechanical properties.Type: ApplicationFiled: September 11, 2006Publication date: April 12, 2007Inventors: Url Mirsky, Shimon Neftin, Furee Lov
-
Publication number: 20070080361Abstract: An optoelectronic semiconductor chip comprises a radiation passage area (2d), to which is applied a current spreading layer (4) containing particles (4b) of a wavelength conversion material. Furthermore, a method for producing such a semiconductor chip and also a device comprising such a semiconductor chip are specified.Type: ApplicationFiled: September 26, 2006Publication date: April 12, 2007Applicant: Osram Opto Semiconductor GmbHInventor: Norwin Malm
-
Publication number: 20070080362Abstract: An more efficient or higher luminance LED assembly may be formed from a high power LED chip having a first surface, and a second surface, the first surface being mounted to a substrate; the second surface being in intimate thermal contact with a light transmissive heat sink having a thermal conductivity greater than 30 watts per meter-Kelvin. The LED chip is otherwise in electrical contact with at least a first electrical connection and a second electrical connection for powering the LED chip. Providing light transmissive heat sink can double the heat conduction from the LED dies thereby increasing life, or efficiency or luminance or a balance of the three.Type: ApplicationFiled: October 6, 2006Publication date: April 12, 2007Applicant: OSRAM SYLVANIA INC.Inventors: Adam Scotch, George Wei
-
Publication number: 20070080363Abstract: Disclosed are a phosphor, which a light emitting device using the phosphor, and a method for producing the phosphor, which allows to control color coordinates, color temperatures and color rendering indexes by shifting a main emission peak without a decrease in light emission luminosity by changing the concentration of an activator included in a phosphor. By this structure, it is possible to actively control the state of white light according to use, thereby enhancing user convenience.Type: ApplicationFiled: July 26, 2005Publication date: April 12, 2007Applicant: LG INNOTEX CO., LTD.Inventors: Chang Hae Kim, Joung Kyu Park, Sang Kee Kim, Chung Ryeol Kim, Kyoung Jae Choi
-
Publication number: 20070080364Abstract: A white light emitting device includes a first light emitting device, a photoluminescent phosphor, a second light emitting device, and a current adjuster. The first light emitting device has a light emitting layer made of semiconductor, and emits blue light. The photoluminescent phosphor completely absorbs light emitted by the first light emitting device to emit green light. The green light combines with the blue light to form cyan light. The second light emitting device has a light emitting layer made of semiconductor, and emits red light. The red light combines with the cyan light to form white light. The current adjuster is electrically connected to the second light emitting device to adjust the magnitude of the current transmitted to the second light emitting device, thereby controlling color temperature.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventor: Bear Hsiung
-
Publication number: 20070080365Abstract: An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output.Type: ApplicationFiled: October 13, 2004Publication date: April 12, 2007Applicant: SHOWA DENKO K.K.Inventor: Munetaka Watanabe
-
Publication number: 20070080366Abstract: A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low defect regions; and forming a cut-out at a specific location along the edge of the nitride semiconductor substrate, using as a reference the direction in which at least one from among the plurality of striped regions extends.Type: ApplicationFiled: September 7, 2006Publication date: April 12, 2007Inventors: Takayuki Nishiura, Yoshio Mezaki