Abstract: To provide an electro-optical device, such as a display or a printer head having a self-luminous element, in which a light-emitting state of a light-emitting element is detected. The electro-optical device comprises a plurality of pixel units arranged in a display region on a substrate in a predetermined pattern, each including a light-emitting element; a plate-like member disposed to overlap the display region and formed of a transparent medium for transmitting light emitted from the plurality of pixel units and internally reflecting a portion of the transmitted light; and light detection means for detecting light that is internally reflected and reaches at least one side of the display region through the inside of the plate-like member.

Abstract: A plasma absorption wave limiter is disclosed. The plasma absorption wave limiter comprises a limiting layer and a trigger layer. The limiting layer is transmissive in a pass band of a sensor and capable of generating a reflective and absorptive free electron plasma that will propagate and dissipate therein. The trigger layer is located aft of and in contact with the limiting layer and is capable of residually absorbing incident radiation and initiating the thermal plasma wave in the limiting layer responsive to a threat.

Abstract: A semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor. Semiconductor image sensor pixel cells using varied metal mesh filters may be arranged in a Bayer pattern for color imaging. As a result, the need for using conventional polymer color filters in image sensor applications is eliminated.

Abstract: A device for selectively detecting specific wavelength components of a light beam includes a spectral spreading element for spectrally spreading the light beam, and a detector array arranged downstream of the element. The detector array includes light-insensitive regions and light-sensitive regions. The element and the detector array are matched to each other so that selectable wavelength components of the light beam hit the light-insensitive regions and remaining wavelength components of the light beam hit the light-sensitive regions.

Abstract: The invention describes a sensor array with digital signals transmitted over an optical fiber for seismic exploration systems. The seismic system includes a transducer for providing digital optical data signals and an optical interrogator for collecting the digital data. The transducer provides data from seismic sensors to the optical interrogator by acting on an optical carrier transmitted along the optical fiber. The system is designed to utilize known electromechanical seismic sensors with fiber optic telemetry.

Abstract: An optical encoder comprising a light-receiving part having photodiodes equal in number to the common multiplier of a number of slits facing the light-receiving part and a number of movement information signals. Output terminals of the photodiodes are connected so that the movement information signals are respectively obtained by adding output signals of the plurality of photodiodes out of the photodiodes equal in number to the common multiplier. The twelve photodiodes are balancedly arranged corresponding to three slits and a light-receiving area of each photodiode is made smaller by subdiving each photodiode. The optical encoder suppress difference, distortion and variance of the movement information signals or the like obtained from the light-receiving part with the result that accurate movement information is obtained.

Abstract: A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with.

Abstract: Certain exemplary embodiments provide a method for automatically optimizing an FTMS. The method can comprise a plurality of potential activities, some of which can be automatically, repeatedly, and/or nestedly performed, and some of which follow. A composite amplitude relating to an FTMS spectral output signal for each of a plurality of FTMS samples can be obtained, each of the samples having an substantially similar number of molecules. The FTMS variable can be changed repeatedly and the composite amplitude re-obtained until a value of an optimization parameter substantially converges, the optimization parameter a function of the composite amplitude.

Abstract: The invention relates to time-of-flight mass spectrometers, equipped with ion reflector and ion detector, with orthogonal ion injection and outpulsing of a segment of the ion beam perpendicular to the direction of injection in a pulser. The invention is directed to a time-of-flight mass spectrometer in which a reflector and an ion detector each have an angular offset about an axis that is perpendicular to the respective directions of injection and deflection. This allows a large distance to be used between the pulser and detector with the highest possible utilization of ions.

Abstract: Disclosed is a high field asymmetric waveform ion mobility spectrometer (FAIMS) having a side-to-side electrode geometry. The FAIMS includes an inner electrode (102) having a length and an outer surface that is curved in a direction transverse to the length. The FAIMS also includes an outer electrode (104) having a length, a channel extending therethrough along at least a portion of the length, and a curved inner surface, a portion of the length of the outer electrode overlapping a portion of the length of the inner electrode so as to provide an analyzer region therebetween. The outer electrode has an ion inlet (114) for introducing ions from a source of ions into the analyzer region and an ion outlet (112) for extracting ions from the analyzer region, the ion inlet and the ion outlet being disposed on opposing sides of the outer electrode.

Abstract: A multimode ionization source includes an electrospray ionization source for providing a charged aerosol, an atmospheric pressure ionization source downstream from the electrospray ionization source for further ionizing said charged aerosol, and a mode separator, or mask, situated so as to separate a portion of the charged aerosol and prevent the portion from being exposed to the atmospheric pressure ionization source.

Abstract: Improved ion focusing for an ion mobility drift cell allows for improved throughput for subsequent detection such as mass detection. Improved focusing is realized by the use of alternating regions of high and low electric fields in the ion mobility drift cell.

Abstract: The invention, in various embodiments, is directed to a solid-state flow generator and related systems, methods and applications.

Abstract: An ion introduction system for selecting ions from one of two separate ionization sources of ions is provided. The system includes a plate having a hole formed therethrough, the plate for being disposed adjacent an ion introduction region of a gas phase ion analyzer such that the hole is selectively movable between a first location in which the hole is adjacent to a first ionization source of ions for supporting introduction of ions from the first ionization source of ions into the gas phase ion analyzer, and a second location in which the hole is adjacent to a second ionization source of ions for supporting introduction of ions from the second ionization source of ions into the gas phase ion analyzer. The system also includes a drive mechanism for driving the plate between a first position in which the hole is at the first location and a second position in which the hole is at the second location.

Abstract: An analytical instrument, such as a mass spectrometer, the instrument having a magnetic section with a controllable electromagnetic field. Controlling the electromagnetic field is accomplished by controlling a temperature of a base plate within the magnetic section, by controlling a current passing through an electromagnetic coil disposed within the magnetic, by disposing a magnetic shunt across a portion of a yoke of the magnet, or by any of the above either independently or in combination. The magnetic shunt is configured to have a temperature coefficient of remnant flux density that is opposite the temperature coefficient of remnant flux density of a first pair of permanent magnets located within the magnetic section.

Abstract: A substrate inspection apparatus 1-1 (FIG.

Abstract: A method and charged particle beam column are presented for directing a primary charged particle beam onto a sample. The primary charged particle beam, propagating along an initial axis of beam propagation towards a focusing assembly, passes through a beam shaper, that affects the cross section of the primary charged particle beam to compensate for aberrations of focusing caused by astigmatism effect of a focusing field produced by an objective lens arrangement of the focusing assembly, and then passes through a beam axis alignment system, that aligns the axis of the primary charged particle beam with respect to the optical axis of the objective lens arrangement.

Abstract: In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

Abstract: The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

Abstract: The the thickness of an opaque coating may be measured using near-infrared absorbance. One measurement method includes transmitting the near-infrared radiation towards the opaque material and determining relative absorbance levels over a range of near-infrared wavelengths. Absorbance wavelengths having relatively high absorbance and relatively low absorbance are then identified and selected. The selected wavelength values are then correlated with known material thicknesses.

Abstract: The invention relates to a method for measuring the quantity of chemical species contained in a high-temperature gas, and especially the quantity of CO and/or CO2 contained in a gas emitted from a metal treating furnace, especially a light-arc furnace (EAF) or a converter (BOF). According to the invention, part of the gas to be analysed is extracted, the temperature of said gas is reduced to at least 300° C., preferably to a temperature that is lower than or equal to 200° C., in such a way as to obtain a at a temperature between 300° C., preferably 200° C., and the ambient temperature, and at least the quantity of CO and/or CO2 said gas is then measured by means of the coherent light signal which is emitted by a laser diode through the gas and is retrieved on emergence from the gas.

Abstract: An improved radiation dosimeter device in an improved radiation dosimeter system provides a DC analog output voltage that is proportional to the total ionizing dose accumulated as a function of time at the location of the dosimeter in a host spacecraft, so as to operate in a system bus voltage range common to spacecraft systems with the output being compatible with conventional spacecraft analog inputs, while the total dose is measured precisely by continually monitoring the energy deposited in a silicon test mass accumulating charge including charge contribution prior to radiation threshold detection for improved measurement of the total accumulated charge with the dosimeters being daisy-chained and distributed about the spacecraft for providing a spacecraft dose profile about the spacecraft using the improved radiation dosimeter system.

Abstract: A radiation detector including a detection member, a first driver, an integration amplifier, and a first adjustment member. The detection member includes a plurality of pixels and is configured to generate a first charge. Further, the first driver is configured to supply the detection member with a first predetermined voltage so that the detection member generates the first charge, and the integration amplifier is configured to amplify the first charge generated from the detection member. In addition, the first adjustment member is provided in between the detection member and the integration amplifier, and is configured to adjust an offset component included in the first charge to be amplified by the integration amplifier.

Abstract: A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C.

Abstract: A semiconductor radiation detector is provided for improved performance of pixels at the outer region of the crystal tile. The detector includes a semiconductor single crystal substrate with two major planar opposing surfaces separated by a substrate thickness. A cathode electrode covers one of the major surfaces extending around the sides of the substrate a fraction of the substrate thickness and insulated on the side portions by an insulating encapsulant. An exemplary example is given using Cadmium Zinc Telluride semiconductor, gold electrodes, and Humiseal encapsulant, with the side portions of the cathode extending approximately 40-60 percent of the substrate thickness. The example with CZT allows use of monolithic CZT detectors in X-ray and Gamma-ray applications at high bias voltage. The shielding electrode design is demonstrated to significantly improve gamma radiation detection of outer pixels of the array, including energy resolution and photopeak counting efficiency.

Abstract: The present invention provides a charged particle beam column that does not cause displacement of an image or degradation of a resolution of images when a charged particle beam is tilted at a large angle. In the charged particle beam column including an aberration corrector, a deflector is used to control the direction of incidence of the charged particle beam on a second condenser lens but the object point of a condenser lens is not shifted. Consequently, the converging charged particle beam is tilted at a large angle with respect to the surface of a specimen without the necessity of shifting the object point of an objective lens lying on the optical axis of the charged particle beam column. At this time, the aberration corrector prevents a shift of an image or degradation of a resolution derived from the tilt of the charged particle beam.

Abstract: The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.

Abstract: The invention relates to a method for determining luminescent molecules by means of optical excitation in confocal measurement volumes, different species of luminescent molecules in a sample being excited at respectively different times and the emission radiation originating from the different species from a measurement volume being captured by a single detector. Furthermore, an apparatus suitable for carrying out the method is disclosed.

Abstract: There is disclosed a laser scanning microscope including a first optical scanning system which scans a first laser light for observing a sample on the sample, a first light branch device which branches the light from the sample from an optical path of the first laser light, a photodetector which detects the light from the sample, separated by the first light branch device, a second optical scanning system which irradiates a specific portion on the sample with a second laser light for stimulating or operating the sample, and a wavelength selection device which is disposed between the first light branch device and photodetector and which includes a first function of transmitting a desired observation light and a second function of limiting transmission of the second laser light.

Abstract: Fine particles of a phosphor are weighed, mixed, and filled. Provided after this step are at least one step of firing the particles in a reducing atmosphere, and a step of pulverizing, dispersing, rinsing, drying and then treating the particles in an ozone atmosphere after the last step of treatment in the reducing atmosphere. This method recovers oxygen vacancy in the host crystal of the phosphor.

Abstract: Embodiments of the present invention are directed toward a photoluminescent article comprising at least one host material and at least one color tunable photoluminescent dye. In certain embodiments, the emission spectrum of the at least one tunable photoluminescent dye may be dependent on the supramolecular architecture of the material. The photoluminescent emission spectrum of the dye is capable of being shifted by subjecting the article to an external stimuli such as, but not limited to, a mechanical deformation, a temperature change, aging of the article, a pressure change, exposure to a chemical compound. In specific embodiments, the color tunable photoluminescent dye is an oligo(phenylene vinylene) compound, such as, but not limited to, 1,4-Bis-(?-cyano-4-methoxystyryl)-benzene, 1,4-bis-(?-cyano-4-methoxystyryl)-2,5-dimethoxybenzene, and 1,4-bis-(?-cyano-4-(2-ethylhexyloxystyryl)-2,5-dimethoxybenzene and 2,5-bis-(?-cyano-4-methoxystyryl)-thiophene.

Abstract: A radiation image conversion panel is disclosed, comprising a support having thereon a stimulable phosphor layer formed by vapor deposition of a stimulable phosphor, wherein the stimulable phosphor layer meets the following requirement: 0?B?90A?0.17 wherein A is a thickness (?m) of the stimulable phosphor layer and B is a transmittance (%) of a stimulating light or a stimulated emission.

Abstract: Disclosed is an ion beam irradiation device including a holder supporting a substrate; and an ion beam source that is a predetermined distance from the substrate and inclined to be substantially parallel with the substrate and that irradiates the substrate with an ion beam.

Abstract: A radiation image storage panel has a phosphor layer composed of a phosphor matrix compound and an activator in combination, a subbing layer composed of the phosphor matrix compound, and a support, in which both of the subbing layer and phosphor layer have been formed by a gas phase-accumulation method and in which the subbing layer has a relative density of 60% to 98%, and a surface of the support in contact with the subbing layer shows a contact angle of less than 50° to water.

Abstract: The invention relates to a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention further relates to a semiconductor device and a method of forming a semiconductor device with an interlayer dielectric that is a thermally conducting material.

Abstract: In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ?Ec and ?Ev, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.

Abstract: The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate, a first layered stack atop the substrate, the first layered stack comprising a first Si-containing portion of the substrate, a compressive layer atop the Si-containing portion of the substrate, and a semiconducting silicon layer atop the compressive layer; and a second layered stack atop the substrate, the second layered stack comprising a second-silicon containing layer portion of the substrate, a tensile layer atop the second Si-containing portion of the substrate, and a second semiconducting silicon-layer atop the tensile layer.

Abstract: The invention makes it possible, for the first time, to produce, despite conventional p-type MOS technology, fast logical gates based on organic field effect transistors. This is primarily due to the early saturation effect of OFETs having very thin semi-conducting layers, and, furthermore, to the use of OFETs having specific properties as the organic logic components and to a novel layout of the circuit containing these logic components.

Abstract: A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.

Abstract: A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line.

Abstract: A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.

Abstract: A liquid crystal display, in accordance with the present invention, includes a first substrate having a thin film transistor and a first electrode formed thereon. The first electrode is electrically connected to the thin film transistor. A first insulating layer is formed on the first substrate including the thin film transistor and the first electrode and a window is formed in the first insulating layer, the window exposing a predetermined region of the first electrode. A second electrode is provided on the first insulating layer and electrically connected to the first electrode. A second substrate includes a third electrode formed thereon. A first gap is formed between a surface of the third electrode and a surface of the predetermined region of the first electrode, and a second gap is formed between the surface of the third electrode and a surface of the second electrode. A liquid crystal layer is interposed between the first gap and the second gap.

Abstract: A light emitting package (8, 8?, 8?, 208, 408) includes a printed circuit board (10, 10?, 10?, 210, 410) supporting at least one light emitting die (12, 12?, 14, 16, 212, 412). A light transmissive cover (60, 60?, 60?, 260, 460) is disposed over the at least one light emitting die. The cover has an open end defining a cover perimeter (62, 62?, 62?, 262, 462) connected with the printed circuit board. An inside surface of the cover together with the printed circuit board defines an interior volume (70, 70?, 270, 470) containing the at least one light emitting die. An encapsulant (76, 76?, 276, 278, 476) is disposed in the interior volume and covers at least the light emitting die.

Abstract: A semiconductor light source for illuminating a physical space has been invented. In various embodiments of the invention, a semiconductor such as and LED chip, laser chip, LED chip array, laser array, an array of chips, or a VCSEL chip is mounted on a heat sink. The heat sink may have multiple panels for mounting chips in various orientations. The chips may be mounted directly to a primary heat sink which is in turn mounted to a multi-panel secondary heat sink. A TE cooler and air circulation may be provided to enhance heat dissipation. An AC/DC converter may be included in the light source fitting.

Abstract: Disclosed herein is an improved thyristor-based memory cell. In one embodiment, the cell is formed in a floating substrate using Silicon-On-Insulator (SOI) technology. The cell preferably incorporates a lateral thyristor formed entirely in the floating substrate, and which is gated by a second word line. The cathode of the thyristor also comprises a source of an access transistor, whose drain is connected to the bit line of the device, and which is gated by a first word line. A trapping layer is built into the floating substrate, and when writing to the cell, pulses are added to cause holes to be trapped on the trapping layer for a logic state ‘1’ and to cause electrons to be trapped on the trapping layer for a logic state ‘0.’ Trapping of charges on the trapping layer adds extra margin to the stored data states, prevents their degradation, and renders the cell non-volatile.

Abstract: The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain.

Abstract: In formation-by-growth of an AlGaN layer 3 as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si in a concentration of approximately 2×1018/cm3 and having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 17 nm.

Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.

Abstract: A multiple channel transistor provides a transistor with an improved drive current and speed by using tunable hot carrier effects. A thin gate oxide has a carrier confinement layer formed on top thereof. Holes produced by hot carrier effects are retained by the carrier confinement layer directly above the gate oxide layer. The holes switch on the bottom transistor of the multi-channel transistor, thereby increasing the drive current.

Abstract: The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window (3) in a layered structure that is located on top of a semiconductor substrate (1), forming at least one process mask that partially covers the cell window (3). In forming the cell window (3), at least one strip (41, 42) of the layered structure is left to remain inside the cell window (3) and at least one strip (41, 42) is used to serve as an edge for the at least one process mask (51, 52). The invention further relates to an insulated gate semiconductor device, comprising a semiconductor substrate (1) having an essentially planar top surface and an insulated gate formed on the top surface by a layered structure (2) that comprises at least one electrically insulating layer (22), wherein at least one strip (41, 42) of the layered structure (2) is disposed on a third area of the top surface between an edge of the insulated gate and a first main contact (6).