Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract: A method for producing a semiconductor device, polishing method, and polishing apparatus, suppressing occurrence of dishing and erosion in a flattening process by polishing of a metal film for constituting an interconnection of a semiconductor device having a multilayer interconnection structure. The production method includes the steps of: forming a passivation film exhibiting an action of inhibiting an electrolytic reaction of a metal at the surface of the metal film; selectively removing the passivation film on a projecting portion so as to expose the projecting portion of the metal film at the surface; removing the exposed projecting portion of the metal film by electrolytic polishing so as to flatten unevenness of the surface of the metal film; and removing the metal film present on an insulation film from the metal film with the flattened surface by electrolytic composite polishing combining electrolytic polishing and mechanical polishing so as to form an interconnection.

Abstract: Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

Abstract: A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said BARC layer; and, forming at least a first contact opening exposing said etch stop layer by a first etching process.

Abstract: A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

Abstract: The semiconductor device fabrication method comprises the step of forming a first insulation film 48 on a semiconductor substrate 10 and a ferroelectric capacitor 42; the step of forming first interconnections 56a–56c; the step of forming a second insulation film 60; the step of planarizing the surface of the second insulation film 60; the step of making heat treatment with a heat treatment furnace to remove water from the second insulation film 60; the step of making heat treatment in a plasma atmosphere generated by using N2O gas or N2 gas; the step of removing water from the second insulation film 60 and nitriding the surface of the second insulation film 60; the step of forming a barrier film 62 on the second insulation film 60; the step of forming contact holes 68 in the barrier film 62 and the second insulation film 60; and the step of burying conductor plugs 70 in the contact holes 68.

Abstract: Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.

Abstract: A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is reduced from a top surface of the substrate is reduced. The reduced surface layer species are purged from the process chamber.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

Abstract: The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.

Abstract: A process which uses a silicone resin to form a wafer-to-carrier bonded package that enables wafer thinning and backside processing while the cured resin exhibits high chemical and thermal resistance. The process is versatile in that the constructed wafer package allows for a wide range of chemical exposures to include dilute acid and base etchants, resist and residue strippers, electroplating chemistries, and also providing use in a range of deposition and etch processes that may exceed 300° C. The process utilizes a mixture of silicone monomers that when applied to semiconductor wafers by a spin-coat application, the result is a planarization of the front side device area, and when a subsequent thin coat is applied will facilitate bonding of the wafer-to-carrier package when heat and pressure are applied. The cured silicone bonded wafer-to-carrier package allows for wafer thinning consistent to industry objectives.

Abstract: A method and apparatus for use in depositing electrical charge and/or nanoparticles is provided. A stamping process is used in which a stamp having a flexible layer such as a flexible semiconductor layer applies a charge pattern on a substrate. Other techniques include lithographic patterning, the use of pre-patterned dissimilar materials, deposition by ions or radiation, the use of differing work functions, the use of liquid phase materials. Deposition monitoring techniques and apparatuses are also provided.

Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.

Abstract: The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern directly on a substrate. Therefore, one object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can respond to upsizing of a substrate. Moreover, another object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can improve throughput and the efficiency of use of material. The invention can improve the accuracy of adhesion position of a liquid drop drastically at the time of patterning a resist material, a wiring material, or the like directly by the liquid drop discharge method mainly on a substrate having an insulating surface.

Abstract: A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.

Abstract: A retrofit arrangement for attacking an electrical lead to a terminal has a body consisting of a conductive central portion and a non-conductive portion substantially surrounding the central portion.

Abstract: Disclosed is a surface material for an automobile internal trim panel consisting of a fiber sheet, wherein the fiber sheet contains an oil repellent and substantially consists of non-water absorbent fibers; an oil repellency of at least one surface of the surface material is grade 1 or more in an evaluation by an AATCC Test Method 118-1997; and a grade of the oil repellency of one surface of the surface material is different from that of the other surface thereof. Further, an automobile internal trim panel comprising the same is also disclosed.

Abstract: Durable silver particulate treatments for yarns and textile fabrics are provided. Such treatments provide, as one example, an antimicrobial fiber and/or textile fabric which remains on the surface and retains its antimicrobial characteristics after a substantial number of standard launderings and dryings. The method of adherence to the target yarn and/or fabric may be performed any number of ways, most preferably through the utilization of a binder system. The particular method of adherence, as well as the treated textile fabrics and individual fibers are also encompassed within this invention.

Abstract: In a synthetic quartz glass ingot which is produced by vapor phase hydrolyzing or oxidatively decomposing a silica-forming starting compound in an oxyhydrogen flame such that silica growth in a direction occurs at a silica particle deposition and melting face, striae visible when viewed from a direction perpendicular to the silica growth direction are distributed periodically over the silica growth direction. The ingot can be used in the production of optical-grade high-homogeneity synthetic quartz glass elements for excimer laser applications, particularly ArF excimer laser applications, in the production of laser damage-resistant optical elements used with light sources such as excimer lasers, and in the production of UV optical fiber.

Abstract: Provided are optical glass exhibiting a refractive index (nd) in a range of 1.75 to 1.87, an Abbé number (?d) in a range of 80 to 45, and excellent low-temperature softening properties even when not incorporating Th2O5 as well as permitting a low production cost; a precision press molding preform and an optical element comprised of such glass; a method of manufacturing the preform; and a method of manufacturing the optical element. The optical glass comprises, in a molar percent, 30 to 45 percent of B2O3, 2 to 15 percent of SiO2, 10 to 20 percent of La2O3, 1 to 10 percent of TiO2, 10 to 30 percent of ZnO, 2 to 15 percent of Li2O, higher than 0 percent and 10 percent or less of WO3, 0 to 15 percent of Nb2O5, and 0 to 10 percent of ZrO2, wherein the total amount of the above-mentioned components is higher than 95 percent, the glass exhibits a refractive index (nd) in a range of 1.75 to 1.87, and an Abbé number (?d) in a range of 80 to 45.

Abstract: The invention presents yttria elements containing high-density chrome based refractory composites, which consist of: (A) Fused polymeric compound as aggregate, containing: 40 to 50 wt % of particles in size from 1 to 4 mm and 15 to 25 wt % of particles in size below 1 mm; (B) A matrix consisting of fused polymeric compounds with particle sizes below 66 ?m, active sintered Al2O3, active industrial Cr2O3 and Y2O3, (C) Binders accounting for 2.5 to 3.5 wt %. Since Y2O3 has resistance to the slag corrosion and penetration with its compatibility with slag, it has been introduced to activate the major component Cr2O3 crystal lattice in favor with Al2O3 so that it helps to reduce the sintering temperature, increase the rate of finished products as well as reduce the manufacturing cost.

Abstract: A dielectric ceramic composition which can be sintered at such a temperature of about 800 to 1000° C. as to permit incorporation of and multilayer formation with a low resistant conductor such as Ag or Cu by the simultaneous sintering with the low resistant conductor, which is sintered to form dielectric ceramics having a dielectric constant ?r of not more than 10, and a resonator having a large Q×f0 value and an absolute value in temperature coefficient ?f of resonance frequency f0 of not more than 20 ppm/° C., the value being easy to be controlled. The dielectric ceramic composition contains a glass component in an amount of 5 to 150 parts by weight based on 100 parts by weight of a main component represented by general formula: aZnAl2O4-bZn2SiO4-cTiO2-dZn2TiO4, in which the molar fractions of respective components a, b, c, and d satisfy 5.0?a?80.0 mol % 5.0?b?70.0 mol %, 5.0?c?27.5 mol %, 0?d?30.

Abstract: Methods and systems for regenerating and pretreating oxides of manganese and precipitation of oxides of manganese from manganese salt solutions. The oxides of manganese and manganese salt solutions are processed utilizing heated aqueous oxidizing solutions at or near boiling at atmospheric pressure. Solution temperature, Eh value and pH value are monitored and adjusted so as to move solution conditions into and to maintain them within the MnO2 stability area. This results in regenerated, pretreated and precipitated oxides of manganese having high or increased pollutant loading capacities and/or oxidation states. Oxides of manganese thus produced are, amongst other uses; suitable for use as a sorbent for capturing or removing target pollutants from industrial gas streams. Filtrate process streams containing useful and recoverable value present as spectator ions may be further processed to produce useful and marketable by-products.

Abstract: A process is provided for the production of a noble metal on TS-1 catalyst useful for the production of propylene oxide wherein TS-1 from hydrothermal crystallization has noble metal dispersed thereon, the resulting material is spray dried and template used in the crystallization is removed, the resulting product is treated with hydrogen to form active catalyst for propylene oxide production.

Abstract: Disclosed are a kenyaite catalyst containing a metal oxide between layers of a layered silicate having kenyaite structure, a method for preparing the same, and a method for preparing ?-caprolactam from cyclohexanone oxime by applying the catalyst to gas phase Beckmann rearrangement.

Abstract: The present invention relates to a new solid catalytic component, which can be used in combination with an aluminum compound as co-catalyst and optionally an external electron donor as additional co-catalyst to form a catalytic system of the Ziegler-Natta-catalyst-type. The solid catalytic system comprises titanium or vanadium compound, a compound of magnesium containing at least one halogen, a particulate porous support, and optionally an internal electron donor.

Abstract: There is provided a catalyst carrier comprising a refractory inorganic material having a sodium solubilization rate no greater than 5 ppmw/5 minutes. There is further a catalyst comprising a refractory inorganic material carrier having a sodium solubilization rate no greater than 5 ppmw/5 minutes; and one or more catalytically reactive metals deposited on said carrier. There is also provided a catalyst suitable for the vapor phase production of alkylene oxide from olefins and oxygen comprising an alumina-based carrier having a sodium solubilization rate no greater than 5 ppmw/5 minutes; and catalytically reactive silver deposited on said carrier.

Abstract: The invention is directed to a method of synthesizing a molecular sieve. In particular, the invention is directed to a method for synthesizing a molecular sieve, especially a silicoaluminophosphate molecular sieve, in the presence of a templating agent and a polymeric base. The invention is also directed to formulating the molecular sieve into a catalyst useful in a process for producing olefin(s), preferably ethylene and/or propylene, from a feedstock, preferably an oxygenate containing feedstock.

Abstract: A catalyst for production of unsaturated aldehydes, such as methacrolein, by gas phase catalytic oxidation of olefins, such as isobutylene, contains oxides of molybdenum, bismuth, iron, cesium and, optionally, other metals. The catalyst has a certain relative amount ratio of cesium to bismuth, a certain relative amount ratio of iron to bismuth and a certain relative amount ratio of bismuth, iron, cesium and certain other metals to molybdenum and, optionally, tungsten. For a catalyst of the formula: Mo12BiaWbFecCodNieSbfCsgMghZniPjOx wherein a is 0.1 to 1.5, b is 0 to 4, c is 0.2 to 5.0, d is 0 to 9, e is 0 to 9, f is 0 to 2.0, g is from 0.4 to 1.5, h is 0 to 1.5, i is 0 to 2.0, j is 0 to 0.5 and x is determined by the valences of the other components, c:g=3.3–5.0, c:a=2.0–6.0 and (3a+3c+2d+2e+g+2h+2i)/(2×12+2b)=0.95–1.10.

Abstract: The method of preparing a chromium oxide catalyst for preparation of pentafluoroethane using a chloroethane compound includes heat treating chromium hydroxide powder at a temperature not higher than 300° C. to obtain chromium oxide powder, heat treating metal hydroxide, at a temperature not higher than 300° C. to obtain metal oxide powder, mixing 85˜99.5 wt % of the chromium oxide powder with 0.5˜15 wt % of the metal oxide powder to obtain a mixture, forming the mixture into a pellet, calcining the pellet at 200-300° C. using nitrogen gas, and fluorinating the pellet at 300-320° C. using a gas mixture including N2 and HF, and then at 320-380° C. using HF gas. The fluorination catalyst prepared using the method of this invention can be effectively used to prepare pentafluoroethane at a high yield using a chloroethane compound.

Abstract: A method for producing an activated carbon material, wherein the method comprises a step of thermally treating coal-based pitch at two temperature ranges of 400° C. to 600° C. and 600° C. to 900° C.; and a step of mixing the thus obtained carbonaceous material with an alkali metal compound and effecting activation thereof at 600° C. to 900° C., and an activated carbon material obtained by the method. When the activated carbon material of the present invention is used a polarizable electrode material of an electric double layer capacitor, high capacitance per electrode is attained without application of excessive voltage. By adding fibrous material to a coal-based pitch during activation expansion of an alkali molten liquid can be suppressed and productivity can be drastically improved.

Abstract: In the multi colored thermally sensitive recording medium, at least one kind of dye precursor is contained in complex fine particles which contain dye precursor and polymer of multi valence isocyanate compound, further contain 4,4?-diisocyanate-3,3?-dimethyl-1,1?biphenyl and/or polymethylene.polyphenyl.polyisocyanate.

Abstract: Benzoyl derivatives of the formula I where the variables have the following meanings: R1, R2 are hydrogen, nitro, halogen, cyano, alkyl, haloalkyl, alkoxy, haloalkoxy, alkylthio, haloalkylthio, alkylsulfinyl, haloalkylsulfinyl, alkylsulfonyl or C1–C6-haloalkylsulfonyl; R3 is hydrogen, halogen or alkyl; R4, R5 are hydrogen, halogen, cyano, nitro, alkyl, alkoxy, alkylthio, dialkylamino, phenyl or carbonyl, it being possible for the 6 last-mentioned radicals to be substituted; X is O, S, NR9, CO or CR10R11; Y is O, S, NR12, CO or CR13R14; R15 is pyrazole which is unsubstituted or substituted, linked in the 4-position and has attached to it in the 5-position a hydroxyl or sulfonyloxy radical; and the agriculturally useful salts thereof; processes and intermediates for the preparation of the 3-heterocyclyl-substituted benzoyl derivatives, compositions comprising them; and the use of these derivatives or compositions comprising them for controlling undesirable plants.

Abstract: Provided are methods comprising providing an aqueous polymer dispersion comprising water, an anionic salt, a water-based friction reducing polymer, a polyol, an anionic surfactant, and a nonionic surfactant; mixing the aqueous polymer dispersion with additional water to form an aqueous treatment fluid; and introducing the aqueous treatment fluid into a subterranean formation. Also provided are methods comprising providing an aqueous treatment fluid comprising water, an anionic salt, a water-based friction reducing polymer in an amount sufficient to provide friction reduction without forming a gel, a polyol, an anionic surfactant, and a nonionic surfactant; and introducing the aqueous treatment fluid into a subterranean formation.

Abstract: A dishwashing wipe having a nonwaven hydroentangled polymer fiber topsbeet; a polymeric membrane; a nonwoven batting layer; and a polymeric scrim, with a dishwashing composition having an amine, a polymeric suds stabilizer, or enzymes incorporated in the wipe, wherein the dishwashing composition is in the form of stripes on the wipe.

Abstract: The present invention is directed to novel substituted cyclopropane ethers compounds of the general formulae selected from the group consisting of R and R1 independently represent a hydrogen or a straight, branched, or cyclic hydrocarbon moiety consisting of less then 15 carbon atoms and containing single and/or double bonds.

Abstract: The invention relates to tissue inhibitor of metalloproteinase-2 (TIMP-2) as an osteoanabolically active peptide for use as a medicament for treating bone defects, bone diseases and for improving bone regeneration.

Abstract: The present invention provides a new subcutaneous injection dosing regimen for erythropoietin to treat anemia. The new erythropoietin treatment regimen of the present invention results in improved hemoglobin levels with less frequent dosing.

Abstract: The invention relates to the use of cyclic Prolyl Glycine (“cyclic PG” or “cPG”) and analogs and mimetics thereof, as neuroprotective agents for the treatment and or prevention of neurological disorders including but not limited to cerebral ischemia or cerebral infarction resulting from a range of phenomena, such as thromboembolic or hemorrhagic stroke, cerebral basospasms, hypoglycemia, cardiac arrest, status epilepticus, perinatal asphyxia, anoxia such as from drowning, pulmonary surgery, and cerebral trauma, as well as to the treatment and prevention of chronic neurodegenerative disorders such as Alzheimer's disease, Parkinson's disease, and Huntington's disease, and as anticonvulsants.

Abstract: The present invention discloses and claims pharmaceutical compositions comprising Group A streptogramin derivatives of formula (I) and salts thereof in combination with at least one natural group B streptogramin derivative

Abstract: The present invention provides a Magainin derivative peptide and method of production thereof. Also provided is a pharmaceutically composition comprising said Magainin derivative peptide and pharmaceutically acceptable carrier and/or pharmaceutically compatible binding agents. The Magainin derivative peptide of the present invention having amino acid sequence of the general formula shown as below: ?????Gly-Ile-Gly-Lys-Phe-Leu-His-Ser-Ala-Lys-Lys- Phe-Gly-Lys-Ala-Phe-Val-Gly-Glu-Ile-X-Asn-Y-Z-OH in which: X is an amino acid residue selected from the group consisting of Met, Ile and Leu; Y is an amino acid residue selected from the group consisting of Ser, Lys, Ile, Arg and Leu; and Z is Arg.

Abstract: In accordance with the present invention, novel IL-16 antagonists, preferably peptides derived from CD4, have been isolated and synthesized. These peptides possess IL-16 antagonistic properties including the ability to selectively bind to IL-16 and inhibit IL-16-mediated biological activity. The peptides comprise specific portions of the native human CD4 receptor and variations thereof and therefore are non-immunogenic when administered to humans. The present invention also provides compositions containing at least one IL-16 antagonist peptide which can inhibit, suppress or cause the cessation of at least one IL-16-mediated biological activity in mammals, including humans. The present invention provides a method and composition for treating inflammation associated with disease states such as asthma, rheumatoid arthritis, inflammatory bowel disease (IBD) and systemic lupus (SLE) in mammals such as, for example, humans.

Abstract: Methods, compositions and devices are disclosed for use in growing new blood vessels to restore or improve blood flow to ischemic tissues and organs of the body. Compositions comprising IGD peptides, particularly GGIGDGG, are able to induce migration in human endothelial cells and promote vessel formation in an in vitro model assay system.

Abstract: The invention relates to the use of a molecule comprising a backbone of 2 to 35 non-hydrogen atoms in length, having covalently attached thereto at least two bulky and lipophilic groups and having at least one more cationic than anionic moiety, in the manufacture of a medicament for destabilizing microbial cell membranes and the use as a membrane acting antimicrobial agent of a molecule comprising a backbone of 2 to 35 non-hydrogen atoms in length, having covalently attached thereto a super bulky and lipophilic group comprising at least 9 non-hydrogen atoms and having at least two more cationic than anionic moieties and to methods of treatment involving such molecules, in particular peptides including peptide derivatives, and peptidomimetics.

Abstract: The present invention is directed to a prevention and treatment for dermatological disorders. One aspect of this invention involves a dermatological treatment comprising one or more polypeptides with an amino acid sequence including KPV (SEQ. ID. NO. 1), MEHFRWGKPV (SEQ. ID. NO. 2), HFRWGKPV (SEQ. ID. NO. 3), or SYSMEHFRWGKPV (SEQ. ID. NO. 4) for the treatment and prevention of dermatological disorders. The polypeptides are at a level to effectively treat the cutaneous inflammation and are carried by a carrier. The one or more polypeptides can also be a dimer formed from any of the amino acid sequence above.

Abstract: The present invention provides a cobalamin-drug conjugate suitable for the treatment of tumor related diseases. Cobalamin is indirectly covalently bound to an anti-tumor drug via a cleavable linker and one or more optional spacers. Cobalamin is covalently bound to a first spacer or the cleavable linker via the 5?-OH of the cobalamin ribose ring. The drug is bound to a second spacer of the cleavable linker via an existing or added functional group on the drug. After administration, the conjugate forms a complex with transcobalamin (any of its isoforms). The complex then binds to a receptor on a cell membrane and is taken up into the cell. Once in the cell, an intracellular enzyme cleaves the conjugate thereby releasing the drug. Depending upon the structure of the conjugate, a particular class or type of intracellular enzyme affects the cleavage. Due to the high demand for cobalamin in growing cells, tumor cells typically take up a higher percentage of the conjugate than do normal non-growing cells.

Abstract: In Caenorhabditis elegans, lin-4 and let-7 encode 22- and 21-nucleotide RNAs, respectively, that function as key regulators of developmental timing. Because the appearance of these short RNAs is regulated during development, they are also referred to as “small temporal RNAs” (stRNAs). We show that many more 21- and 22-nt expressed RNAs, termed microRNAs, (miRNAs), exist in invertebrates and vertebrates, and that some of these novel RNAs, similar to let-7 stRNA, are also highly conserved. This suggests that sequence-specific post-transcriptional regulatory mechanisms mediated by small RNAs are more general than previously appreciated.

Abstract: Amplibody compositions and methods used to interact with agglomeration proteins are disclosed herein. Compositions herein comprise one or more DNA or RNA molecules having affinity for at least one agglomeration protein. The nucleic acid component is a naturally or non-naturally occuring molecule with twenty or more ribonucleotide bases. For RNA, at least one nucleotide sequence portion of this RNA molecule has affinity to at least one consensus sequence present in the agglomeration RNA-binding protein. The portion of nucleotide sequence of RNA having affinity for agglomeration proteins is a sequence that is derived from either and RNA virus, and RNA agglomeration proteins is a sequence that is derived from either and RNA virus, an RNA phage, a messenger RNA (“mRNA”), a ribosomal RNA (“rRNA), a transfer RNA (“tRNA”), a sequence that is received as a template by one or more RNA dependent RNA polymerases, or a combination thereof.

Abstract: The present invention provides RNA molecules (e.g., antisense, RNAi, or siRNA) specific for MnSOD, and further provides methods of reducing expression of MnSOD in cells (e.g., cancer cells).