Abstract: A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a contact area and patterns the interlayer insulating layer to open the contact area. The disclosed method further places the semiconductor substrate in a chamber, injects reactant gas and precursor into the chamber, transforms the gas into plasma gas and causes the plasma gas to react with the precursor to form a single TiSiN film covering the contact area.

Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Abstract: A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

Abstract: A method for forming a semiconductor device having a reduced pitch is provided. The method includes providing a substrate, forming a material layer over the substrate, forming a photoresist layer over the material layer, exposing a top surface of the photoresist layer to radiation, and forming a silylated layer over the photoresist layer. The method further includes removing a portion of the silylated layer to expose the photoresist layer, removing the photoresist layer, removing portions of the material layer using the silylated layer as a mask, and removing another portion of the silylated layer.

Abstract: A method is provided for forming at least three devices with different gate oxide thicknesses and different associated operating voltages, in the same integrated circuit device. The method includes forming a plurality of gate oxides with different thicknesses in high voltage and low voltage areas in the same integrated circuit device. A dry etching operation is used to remove the relatively thick gate oxide from the high voltage area using photoresist masking of the low voltage area and a hard mask in the high voltage area, to mask the gate oxide films. A wet etching procedure is then used to remove the gate oxide film from the low voltage areas. The hard mask may be formed over a polysilicon structure.

Abstract: A dual damascene trench etching process includes a two-step BARC etching process, a first BARC etch step using a fluorocarbon-based plasma, and a second BARC etch step using an O2/N2-based plasma. The first BARC etch step removes a first portion of the BARC covering a dielectric stack using a fluorocarbon-based plasma. The second BARC etch step removes a second portion of the BARC covering the dielectric stack using a O2/N2 based plasma. The dual damascene trench etching process may further include a BARC etch back process to remove a further portion of the BARC not covering the dielectric stack. The dual damascene trench etching process further includes a low-k dielectric etching process that etches trenches in a low-k dielectric layer in the dielectric stack and that avoids the use of argon in order to prevent facet formation.

Abstract: A high ion energy and high pressure O2/CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at greater than approximately 300 mT pressure and ion energy greater than approximately 500 W conditions with an oxygen partial pressure of greater than approximately 85%. The rapid ash rate of the high pressure/high ion energy process and minimal dissociation conditions (no “source” power is applied) allow minimal interaction between the interlevel dielectric and ash chemistry to achieve minimal overall sidewall modification of less than approximately 5 nm.

Abstract: A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

Abstract: Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC.

Abstract: A plurality of semiconductor nanoparticles having an elementally passivated surface are provided. These nanoparticles are capable of being suspended in water without substantial agglomeration and substantial precipitation on container surfaces for at least 30 days. The method of making the semiconductor nanoparticles includes reacting at least a first reactant and a second reactant in a solution to form the semiconductor nanoparticles in the solution. A first reactant provides a passivating element which binds to dangling bonds on a surface of the nanoparticles to passivate the surface of the nanoparticles. The nanoparticle size can be tuned by etching the nanoparticles located in the solution to a desired size.

Abstract: A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.

Abstract: A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.

Abstract: A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen doped silicon carbide, nitrogen doped silicon carbide, carbon doped silicon nitride, nitrogen doped silicon oxycarbide, or combinations thereof. The deposition is performed in a plasma enhanced chemical vapor deposition chamber and the deposition temperature is less than 450° C. The sidewall spacers so produced provide good capacity resistance, as well as excellent structural stability and hermeticity.

Abstract: A pre-ECD surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with an H2 plasma to remove surface contamination (122), reduce any CuOx (123), and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).

Abstract: Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.

Abstract: The shelf liner is a multi-layered thermoplastic composite sheet of consistent thickness, with a non-slip bottom side and a decorative top side. A decorative top sheet is fused to a top surface of a substrate layer. The substrate layer comprises a nonwoven fabric or material that is coated on both sides, and can be fully impregnated, with a foamed plasticized polyvinyl chloride. The foamed plasticized polyvinyl chloride coating on the bottom side of the substrate layer gives the shelf liner a non-slip characteristic. An interlayer of polyvinyl chloride plastisol is disposed between the top sheet and the substrate to enhance the fused bonding of the layers. A bottom surface of the substrate layer may be fully or partly covered with a bottom coating to modify the non-slip nature of the shelf liner.

Abstract: The present invention provides a colored reinforced article of manufacture having a substantially uniform distribution of color. The colored reinforced article of manufacture comprises a fiber-reinforced thermosetting resin matrix and a non-appertured colored veil in the thermosetting resin matrix.

Abstract: Ceramics comprising (i) at least one of Nb2O5 or Ta2O5 and (ii) at least two of (a) Al2O3, (b) Y2O3, or (c) at least one of ZrO2 or HfO2. Embodiments of ceramics according to the present invention can be made, formed as, or converted into optical waveguides, glass beads, articles (e.g., plates), fibers, particles (e.g., abrasive particles), and thin coatings.

Abstract: A rare earth garnet sintered compact which is produced by subjecting a rare earth garnet powder such as YAG to a pre-sintering, sintering the pre-sintered product by HIP, and annealing the sintered product at 1100° C. to 1600° C. in a whole oxygen atmosphere under a whole pressure of 4.5 MPa or more, and has an average crystallite diameter of 0.9 to 9 ?m, an optical loss coefficient of 0.002 cm?1 or less and a strain of a transmitted wave of 0.05 ? cm?1 or less.

Abstract: A method for making transparent continuous zeolite film is provided. First a transparent precursor sol is prepared, and the precursor sol is processed to a specific concentration. The precursor solution is coated on a surface of a substrate which is heated under an ambiance of 120˜250° C. in temperature and a humidity less than saturated humidity. The packing of zeolite nanocrystals in the film converted from coated precursor sol has preferred orientation and the film shows super-hydrophobic property.

Abstract: The invention provides a curing resin composition to be used for a sealant or an end-sealing material for a display element, which comprises a curing resin together with a photopolymerization initiator and/or a curing agent and, has a carbonyl group derived from a (meth)acryl group together with an epoxy group and/or a hydroxyl group derived from an epoxy group and, a cured product of which has nitrogen atoms at a ratio of 3 to 10% by atom in the total of carbon atoms, hydrogen atoms and nitrogen atoms in the composition; a volume resistance of 1×1013 ?·cm or higher; a dielectric constant of 3 or higher at 100 kHz; and a glass transition temperature of 80 to 150° C.

Abstract: Solid fine particles which contain a magnesium atom, an aluminum atom and a C1-20 alkoxy group simultaneously, are insoluble in a hydrocarbon solvent, and have an average particle diameter of 3 to 80 ?m, and an olefin polymerization catalyst containing the solid fine particles and a transition metal compound in the groups 3 to 11 in the periodic table, exhibit a very high olefin polymerization activity without combination with an expensive organoaluminum oxy compound or organoboron compound and maintains a high activity in polymerization for a long time, and an olefin polymer excellent in powdery properties can be produced by using the olefin polymerization catalyst. The transition metal compound in the groups 3 to 11 in the periodic table includes a transition metal compound having a ligand containing two or more atoms selected from a boron atom, a nitrogen atom, an oxygen atom, a phosphorus atom and a sulfur atom.

Abstract: Catalysts and catalyst systems useful for the olefin polymerization and copolymerization, and their synthesis procedure and usage are disclosed.

Abstract: The silicon carbide-based catalytic body of the present invention comprises: a porous body of given shape comprising a first bonded structure formed by bonding a large number of silicon carbide particles as an aggregate to each other in a state that a large number of fine pores are present, and a catalyst containing an alkali metal and/or an alkaline earth metal, loaded on the porous body, characterized in that the catalyst is loaded via a crystalline coating film comprising an oxide and formed on at least part of the surfaces of the silicon carbide particles forming the first bonded structure. In the catalytic body, the catalyst such as NOx occlusion catalyst or the like, loaded thereon can maintain its activity over a long period.

Abstract: A silicon-containing alumina support, a process for preparing the support, and a catalyst containing the support are provided. The alumina support includes an additive silicon enriched on its surface, with the difference between the atomic ratio of silicon to aluminum on the surface of alumina support and that of the alumina support is at least 0.10. The process for preparing the silicon-containing alumina support comprises adding a nanometer silicon compound. The inventive alumina support can be used in manufacturing a catalyst for hydrotreating hydrocarbons with good physico-chemical properties and performance.

Abstract: Supports for Fischer-Tropsch catalysts are formed by forming a particulate material from titania, alumina and optionally silica. A cobalt compound is incorporated into the particulate material which then is calcined to convert at least part of the alumina to cobalt aluminate.

Abstract: A catalyst for preferentially reducing carbon monoxide in a hydrogen stream. The catalyst is formed from a chemical composition including a hexaaluminate, a metal hydroxide and a precious metal. The composition may be disposed on a support or may be extruded or cast into or onto a support. Incorporation of hexaaluminates allows inclusion of metal hydroxides that flux the active precious metal surface at higher temperatures than can aluminum oxide-based catalytic compositions, thereby enhancing resistance of the catalyst and monolithic support and increasing the durability and thermal range of the PROX catalyst. An additional advantage is that lesser amounts of precious metal oxides need be deposited onto the hexaaluminate, while retaining activity similar to aluminum oxide compositions.

Abstract: The invention provides the compounds of the formula (1) where R1 is C1- to C22-alkyl, C2- to C22-alkenyl, C6- to C30-aryl or C7- to C30-alkylaryl, —CHR5—COO? or —O?, R2 is hydrogen —CH3 or —OH, R3, R4 are each independently C1- to C22-alkyl, C2- to C22-alkenyl, C6- to C30-aryl or C7- to C30-alkylaryl, R5 is hydrogen, C1- to C22-alkyl or C2- to C22-alkenyl, A is a C2- to C4-alkylene group, D is a C2- to C5-alkylene group which may contain one or two heteroatoms, m is a number from 0 to 30, n is a number from 1 to 18, and also their use as corrosion and gas hydrate inhibitors.

Abstract: A process for enhancing skin, mucous membranes and textile compatibility with an anionic surfactant composition involving: (a) providing an anionic surfactant composition; (b) providing an acid selected from the group consisting of a hydroxycarboxylic acid, a salt of a hydroxycarboxylic acid, an ester of a hydroxycarboxylic acid with an ethoxylated alcohol, and mixtures thereof; and (c) mixing (a) and (b).

Abstract: The present invention provides a removable marking system that includes a removable paint formulation and an aqueous removal formulation, and a method of using this removable marking system.

Abstract: The present invention discloses keto derivatives of 5,5,6,7,8,8-hexamethyl-hexahydronaphthalene or keto-epoxy derivatives of 5,5,6,7,8,8-hexamethyl-octahydronaphthalene which are useful perfuming ingredients having a musky-earthy character.

Abstract: The present invention provides stable protein solution formulations filled in a container made from a hydrophobic resin at least for the part in direct contact with said formulation.

Abstract: The invention relates to new peptides formed of at least seven subsequent amino acids of the amino acids in position 12-40, counted from the N-terminal end, in the sequence constituting human lactoferrin, and preferably modifications thereof. The invention also relates to medicinal products comprising such peptides, especially intended for treatment and prevention of infections, inflammations and tumours. Furthermore, the invention relates to food stuff, e.g. infant formula food, comprising the above mentioned peptides.

Abstract: We claim a method of expression a thioredoxin-fused membrane protein comprising expressing said thioredoxin-fused membrane protein in a cell-free protein synthesis system in the presence of a non-ionic detergent. It is preferable that the fused membrane protein which is a highly hydrophobic protein, e.g., a G protein-coupled receptor, can be produced in a state being highly soluble and capable of forming a biologically active three-dimensional structure. Also, this invention provides a recombinant polynucleotide encoding said thioredoxin-fused membrane protein which is expressed in the cell-free protein synthesis system.

Abstract: Template-fixed ?-hairpin peptidomimetics of the general formulae (I) and (II) wherein Z, Z1 and Z2 are template-fixed chains of 8 to 16 ?-amino acid residues which, depending on their positions in the chain (counted starting from the N-terminal amino acid) are Gly, or Pro, or of certain types which, as the remaining symbols in the above formulae, are defined in the description and the claims, and salts thereof, have the property to inhibit the growth of or to kill microorganisms and cancer cells. They can be used as disinfectants for foodstuffs, cosmetics, medicaments or other nutrient-containing materials or as medicaments to treat or prevent infections or diseases related to such infections and/or cancer.

Abstract: A modified serum albumin is provided which has been modified in the n-terminal region or binding region VI, such as through a truncation of at least three amino acids at the n-terminal end, so that it exhibits reduced or eliminated binding of trace metals such as nickel and/or copper. Other suitable modifications to this binding region include mutations such as an elongation or insertion which will be sufficient to disrupt the trace metal binding which is highest at this site. The modified albumin of the present invention is advantageous in that its binding to trace metals is reduced or eliminated, and it can thus be used more safely and effectively than unmodified albumin with a reduced or eliminated likelihood of causing an allergic reaction to the trace metal in the human being treated with the albumin composition.

Abstract: This invention describes the human gene homologue of the mouse gene previously identified. The human gene is located on the long arm of chromosome 17. The human gene, termed G1h, encodes for a protein, termed P1h, that substantially differs from the mouse protein. The human protein P1h can be used for immunosuppressive actions and clinical applications.

Abstract: Peptides and methods of their use for inhibiting drug and radiation-therapy resistance in cancerous cells in which efficacy of chemotherapy and/or radiotherapy of a patient is enhanced by administration of an effective amount of a peptide that inhibits cell adhesion mediated drug resistance (CAM-DR). Preferably, the peptide comprises D-amino acids having the sequence: kmviywkag (RZ-3) or is a variant or modified version thereof. The peptide is preferably administered to the patient prior to chemotherapy and/or radiation therapy. Inhibition of cell adhesion mediated drug resistance (CAM-DR) by RZ-3 in multiple myeloma cells is disclosed.

Abstract: The invention relates to gene delivery vehicles which comprise nucleic acid molecules encoding apoptosis-inducing proteins VP2 and/or apoptin (VP3) like activity. VP2 and VP3 are viral proteins of the Chicken Anaemia Virus. Also, the invention relates to anti-tumor therapies. Infection of various human tumor cells with the gene delivery vehicles of the invention will result in the induction of apoptosis in tumor cells and much reduced apoptosis, if at all, in normal diploid, non-transformed/non-malignant cells. Also the invention relates to the diagnosis of cancer, and related forms of hyperplasia, metaplasia and dysplasia.

Abstract: The present invention relates to the IL-12p40 subunit mutant gene which can produce IL-12(interleukin 12) of human and mouse origin with high activity, the expression vector including above mutant gene and the use of them to DNA vaccine adjuvant. Particularly, it relates to IL-12p40 mutant gene which inhibits the secretion of IL-12p40 but normally secretes active IL-12p70 by making mutation at Asn-222(human) or Asn-220(mouse) amino acid of IL-12p40, which acts as a competitive inhibitor of active form of IL-12, IL-12p70. Therefore, the IL-12p40 mutant gene of the present invention can be useful for DNA vaccination and gene therapy against various diseases, for example, AIDS, hepatitis C or hepatitis B, cancer, influenza, tuberculosis and malaria, which essentially require cellular immune responses for their therapy.

Abstract: The present invention concerns the preparation of composite biomaterials constituted by hyaluronic acid and the derivatives thereof in combination with polymers that have electrically conductive properties. In particular, the methods of preparing biomedical devices formed by a two- or three-dimensional polysaccharide matrix and by an electrically conductive membrane. The matrix is constituted by hyaluronic acid derivatives in the form of membranes, woven fabrics, nonwoven felts, meshes, gauzes, guide channels or sponges, while the electrically conductive membrane is constituted by a film of polypyrrole (polymer conductor) in combination with hyaluronic acid or a derivative thereof (doping agent).

Abstract: Compounds of formula (I) or pharmaceutically acceptable salts thereof are provided where at least one of R2 or R3 is not hydrogen. The compounds of the present invention are N-methyl-D-aspartate (NMDA) receptor antagonists and are useful in treating a variety of conditions present in a mammal that benefit from inhibiting the NMDA receptor.

Abstract: The invention relates to compounds of the following formula (I) or their salts: in which R1 represents OR4 or others, in which R4 is an alkyl group having 1-8 carbon atoms which may have a substituent or the like; R2 is halogen, nitro, cyano, carboxyl, or the like; R3 is hydrogen, halogen, hydroxyl, amino, carboxyl, or the like; X is NR11, oxygen, or sulfur, in which R11 is hydrogen, or an alkyl group having 1-8 carbon atom which may have a substituent; and each of Y and Z is CR12 or nitrogen, in which R12 has the same meaning as R3 above, and a xanthine oxidase inhibitor containing the compound as an active ingredient.

Abstract: The invention features a method for treating a patient having an immunoinflammatory disorder, by administering to the patient (i) a tetra-substituted pyrimidopyrimidine, and (ii) a corticosteroid simultaneously or within 14 days of each other in amounts sufficient to reduce or inhibit immunoinflammation.

Abstract: Compositions containing ?2 adrenergic agonists in combination with carbonates and carbamates of the formula and in combination with related steroid carbonates and carbamates are disclosed. The compositions are useful for treating bronchospasm, for inducing bronchodilation and for treating rhinitis, asthma, and chronic obstructive pulmonary disease (COPD) and inflammatory diseases, particularly by inhalation.

Abstract: Polyarylcarboxamide compounds of formula (I) are useful as lipid lowering agents.

Abstract: The invention relates to compounds of the general formula in which R1, R2, R3, R4, R2?, R3?, R4?, R5, and X is —CHR— are as defined in the specification. The invention also provides pharmaceutically acceptable acid addition salts, optically pure enantiomers, racemates and diastereomeric mixtures of such compounds. The invention further provides methods for the treatment of Alzheimer's disease or common cancers.

Abstract: The invention relates to novel CD1a-presented antigens. These antigens can be used as antigens, adjuvants or as immunomodulatory agents in a variety of diagnostic, therapeutic and prophylactic applications.

Abstract: The present invention discloses novel depeptidized compounds which have HCV protease inhibitory activity as well as pharmaceutical compositions comprising such compounds and methods of using them to treat disorders associated with the HCV protease.