Abstract: A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.

Abstract: For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 ??cm.

Abstract: Methods and apparatus for providing a memory array fabrication process that concurrently forms memory array elements and peripheral circuitry. The invention relates to a method for fabricating memory arrays using a process that concurrently forms memory array elements and peripheral circuitry and results in a reduction in pitch.

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Abstract: A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding layer, and the wafer in the through regions is completely removed from the top surface.

Abstract: A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.

Abstract: A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.

Abstract: The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemistry, with the first and second materials having a common etch rate along a first direction, defining a first etch rate, and the first and third materials having a similar etch rate along a second direction, transversely extending to the first direction, defining a second etch rate. Typically, the etch rate is selected to be different in furtherance of facilitating control of the dimensions of features formed during the etching process.

Abstract: A semiconductor substrate centering mechanism includes a plurality of substrate support pins, each pin having a top surface. The top surfaces of the pins define a plane in which the substrate is supported. Each pin has a tab mounted eccentrically at the top surface of the pin. The tabs extend upwardly relative to the top surfaces of the pins. The centering mechanism further includes a pin rotation mechanism adapted to rotate each pin. The pin rotation mechanism rotates the pins between a first position in which the tabs define an envelope that is larger than a circumference of the substrate and a second position in which the tabs define a centered position for the substrate. A telescoping arrangement of nesting shield segments may also be provided for each pin to prevent processing fluid from reaching a shaft of the pin.

Abstract: For a semiconductor device having copper wiring, an exemplary method according to an embodiment of the present invention may include forming a first insulation layer on a silicon substrate having a transistor thereon; forming a contact hole by etching the first insulation layer; forming a metal plug so as to fill the contact hole; forming a second insulation layer on the metal plug; forming a trench exposing an upper surface of the metal plug by partially removing the second insulation layer; sputter-etching an interior wall and bottom surface of the trench with a plasma; and forming a copper line layer so as to fill the sputter-etched trench. According to this method, electrical contact between a metal plug and a copper line layer may be maintained or improved prevented by reducing or removing by-products on the metal plug using the sputter-etching process.

Abstract: The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 ?/min.

Abstract: An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

Abstract: In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.

Abstract: A method of manufacturing a semiconductor device is provided comprising the steps of: (a) forming a semiconductor element on a substrate, the semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over the element and an insulating layer formed over the first etch stop layer; (b) forming an opening through the insulating layer over the contact region at least to the first etch stop layer; (c) removing a portion of the first etch stop layer contacting a selected contact region using a process that does not substantially oxidize with the contact region, to form a contact opening to the contact region; and (d) filling the contact opening with conductive material to form a contact.

Abstract: An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. The mineral acid may be selected from the group including HCl, H2SO4, H3PO4, HNO3, and dilute HF (preferably the mineral acid is HCl) and the peroxide may be hydrogen peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one step process or a two step process. In the one step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide.

Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Abstract: Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application of the voltage; 2) reversing the polarity of the voltage bias on the devices; 3) alternating pulsing between forward and reverse polarity bias; or 4) applying light energy simultaneously with an electrical bias voltage.

Abstract: A structure interfaces dual polycrystalline silicon layers. The structure includes a first layer of polycrystalline silicon and a metal interface layer formed on a surface of the first layer of polycrystalline silicon. The structure further includes a second layer of polycrystalline silicon formed on a surface of the interface layer.

Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.

Abstract: Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of Hf1-xAlx (0<x<0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1?v?0.9, 0?w?0.5, 0.01?x?0.9, 0?y?0.7, 0.01?z?0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1<v<0.8, 0<w<0.8, 0.05<x<0.8, 0<y<0.3, 0.05<z<0.8 for v+w+x+y+z=1 and then converting the polymeric preceramic layer into a ceramic diffusion barrier by thermal methods.

Abstract: It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleton wherein 1) the aforementioned skeleton is composed of an inner part and a surface part, 2) the aforementioned inner part is substantially made of carbon material, and 3) all or part of the aforementioned surface part is an oxide semiconductor, and to a manufacturing method therefor.

Abstract: A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized to effectuate a cleaning of an edge portion of a wafer.

Abstract: Used noble metal-containing titanium zeolite catalysts, that have been employed in the liquid-phase epoxidation of olefins with hydrogen and oxygen in the presence of a buffer, are regenerated by heating the used catalyst at a temperature of at least 250° C. in the presence of a oxygen-containing gas stream, followed by reduction at a temperature of at least 20° C. in the presence of a hydrogen-containing gas stream to form a reactivated catalyst.

Abstract: A process for producing a Gp 2/transition metal olefin polymerisation catalyst component, in which a Gp 2 complex is reacted with a transition metal compound so as to produce an oil-in-oil emulsion, the disperse phase containing the preponderance of the Gp 2 metal being selectively sorbed on a carrier to provide a catalyst component of excellent morphology. Polymerisation of olefins using a catalyst containing such a component is also disclosed.

Abstract: A solid catalyst component for ?-olefin polymerization, which comprises a titanium atom, a magnesium atom, a halogen atom, a phthalic acid ester compound, and a 1,3-diether compound, wherein an amount of the 1,3-diether compound contained in the solid catalyst component is 0.1 to 3 mol per one mol of the phthalic acid ester compound contained therein; a process for producing a catalyst for ?-olefin polymerization, which comprises the step of contacting at least the above solid catalyst component, an organoaluminum compound, and an external electron donor compound with one another; and a process for producing an ?-olefin polymer, which comprises the step of homopolymerizing or copolymerizing an ?-olefin in the presence of a catalyst produced by the above process.

Abstract: A composition defined: either as comprising at least one Broensted acid, designated HB, dissolved in a liquid medium with an ionic nature of general formula Q+A?, in which Q+ represents an organic cation and A? represents an anion that is different from B, or as resulting from dissolving at least one Broensted acid, designated HB, in a non-aqueous liquid medium with an ionic nature of general formula Q+A?, in which Q+ represents an organic cation and A? represents an anion that is identical to the anion B, can be used as a catalyst and solvent in acid catalysis processes, in particular in the alkylation of aromatic hydrocarbons, the oligomerization of olefins, the dimerization of isobutene, the alkylation of olefins by isoparaffins, the isomerization of n-paraffins into isoparaffins, the isomerization of n-olefins into iso-olefins, the isomerization of the double bond of an olefin and the purification of an olefin mixture that contains branched alpha olefins as impurities.

Abstract: A catalyst for the selective hydrogenation of alkynes and dienes in C2-C5+-olefin mixtures is described. These catalysts contain (a) a metal of the tenth group of the Periodic Table, (b) a metal of the eleventh group of the Periodic Table and (c) if required, a compound of a metal of the first or second group of the Periodic Table, these metals being applied to a support which is selected from the group consisting of silica, titanium dioxide, zirconium oxides, spinels, zinc aluminates, zinc titanates or mixtures of these substances, and the metal of the eleventh group being distributed homogeneously over the cross section of the catalyst particle and the metal of the tenth group being present in the edge layer close to the surface of the catalyst particle. Such a catalyst is prepared by applying the metal of the eleventh group, preferably during the preparation of the support itself, by impregnation with a solution of a suitable metal salt.

Abstract: The present invention relates to a structured catalyst for reforming of gasoline and a method of preparing the same, more particularly to a structured catalyst for reforming of gasoline for fuel-cell powered vehicles prepared by wash-coating the transition metal based reforming catalyst on the surface of the ceramic honeycomb support wash-coated with sub-micron sized alumina or its precursor to sufficiently increase the effective surface area and the performance of the catalyst and a method of preparing the same.

Abstract: Provided are a flue gas denitration catalyst having high denitration activity and capable of suppressing a side reaction, that is, oxidation of SO2; and a preparation process of the catalyst. The flue gas denitration catalyst comprises TiO2, WO3 and V2O5. In the surface layer of the catalyst within 200 ?m from the surface thereof, V2O5 is supported on a carrier containing TiO2 and WO3. The supported amounts of V2O5 range from 0.4 to 5 wt. % based on the weight of the surface layer and range from 0.1 to 0.9 wt. % based on the total weight of the catalyst. The V2O5 thus supported has a crystallite size of less than 10 nm as measured by X-ray diffraction. The catalyst can be available by preparing a mixture containing TiO2 and WO3 and having V2O5 supported on the surface of an extruded product of the prepared mixture by a vapor phase method.

Abstract: A reactive-adsorptive protective material having an activated carbon adsorbent, including those manufactured from a gel-type ion exchange resin. The activated carbon adsorbent has adsorptive properties for adsorbing chemical impurities. The activated carbon is wettlerized to further impart reactive properties onto the activated carbon for providing protection against blood agents in the atmosphere. Advantageously, a superior reactive-adsorptive material is provided having the ability to neutralize chemical substances, in particular, blood agents, while at the same time not diminishing the effectiveness of the carbon's adsorption capabilities.

Abstract: A carbon material for electric double layer capacitor electrodes which is obtained by a heat treatment and an activation treatment of a material pitch having a softening point in a range of 150 to 350° C., a ratio of amounts by atom of hydrogen to carbon (H/C) in a range of 0.50 to 0.90 and a content of optically anisotropic components of 50% or greater. The material pitch is preferably a synthetic pitch obtained by polymerizing a condensed polycyclic hydrocarbon such as naphthalene, methylnaphthalene, anthracene, phenanthrene, acenaphthene, acenaphthylene and pyrene in the presence of an ultra-strong acid catalyst such as a hydrogen fluoride-boron trifluoride complex. Electric double layer capacitors having a high electrode density and a high electrostatic capacity per unit volume can be constructed using the carbon material.

Abstract: The invention relates to new phenyl-substituted cyclic ketoenols of the formula (I) in which Het represents one of the groups ?wherein A, B, D, G, X, Y and Z have the meaning given in the description, several processes and intermediate products for their preparation and their use as pest control agents and herbicides.

Abstract: The present invention concerns a water-based drilling mud for utilization in the drilling of oil wells comprising an aqueous phase wherein the aqueous phase contains an oil soluble polymer in the form of a gel as a fluid loss reducer. The subject invention further reveals a method of lubricating a drilling bit during the drilling of a well which comprises circulating a water-based drilling mud in the vicinity of the drilling bit wherein the water-based drilling mud is comprised of an aqueous phase, and wherein the aqueous phase contains an oil soluble polymer in the form of a gel as a fluid loss reducer.

Abstract: It has been discovered that certain fracturing fluid compositions can be used to fracture a subterranean formation and be permitted to stay within the formation for a relatively extended period of time, for example 28 days or more, before being flowed back or produced. At least two embodiments are envisioned, a bacteria-containing formulation and an anti-bacterial formulation. Both systems would be expected to prevent the potential of the fluid to oil wet the formulation (water block condition) by keeping the formation water wet through the use of water wetting surfactants or solvents. Additionally, both formulations would control reservoir crude souring (H2S generation by in situ sulfate-reducing bacteria), reservoir plugging (via slime biopolymers generated by in situ microbes, inorganic scale deposition like calcium carbonate or barium sulfate, and clay fines migration).

Abstract: This invention is directed to a novel process for making Group II metal carbonated, overbased Mannich condensation products of alkylphenols, which process uses ethylene carbonate as both a source of carbon dioxide and ethylene glycol. In particular, under the reaction conditions using ethylene carbonate in the present invention, carbonation and overbasing Mannich condensation products of alkylphenols is possible while at the same time the viscosity of the carbonated, overbased Mannich condensation products of alkylphenols remains within acceptable levels, typically under 1000 cSt at 100° C. The present invention is also directed to carbonation of Mannich condensation products of alkylphenols using a C2-C6 alkaline glycol and carbon dioxide.

Abstract: Esters formed from polyol, C12-C28 branched chain fatty acid, and/or C12-C28 cyclic fatty acid are useful as a friction modifier for lubricants. Monomer is a preferred source for these fatty acids.

Abstract: The grease composition of the present invention contains, in a lubricant base oil, 0.01 to 10% by mass of a fatty acid salt, 0.01 to 10% by mass of carbonate, 2 to 30% by mass of a thickener, and 0.1 to 20% by mass of a sulfur type extreme-pressure agent on the basis of the total amount of composition.

Abstract: A high concentration, aqueous liquid surfactant composition is disclosed, comprising at least one amphoteric or anionic surfactant and a liquid-stabilizing amount of at least one liquid-stabilizing agent. The liquid-stabilizing agent is a succinic acid derivative, glutaric acid derivative or a combination thereof. The composition is pourable and pumpable at ambient room temperature.

Abstract: The present invention relates to cleaning composition comprising a surface substantive polymer for cleaning surfaces, particularly the exterior surfaces of a vehicle.

Abstract: Laundry articles comprise a water-insoluble substrate and a particulate soil absorber comprising a crosslinked polyamide including units having a nucleophilic group. The particulate soil absorber is adhered to the water-insoluble substrate and is effective for inhibiting transfer or redeposition of particulate soil to items in a wash solution. Methods for making such articles comprise adhering a particulate soil absorber comprising a crosslinked polyamide including units having a nucleophilic group to the water-insoluble substrate.

Abstract: The present invention is directed to a pourable acidic hard surface cleaning and/or disinfecting composition which contains suspended inclusions which appear as visibly discernible, discrete particulate materials, preferably where said discrete particulate materials are based on alginates.

Abstract: A detergent tablet having at least one phase in the form of a solid foam having gas-filled cells delimited by solid partitions, and the tablet or the at least one phase comprises 40% to 90% by weight of one or more water-soluble polymers. A process for the production of detergent tablets by foaming a solution, melt, emulsion, or suspension comprising at least one active ingredient with a gaseous medium, and solidifying the resulting foam.

Abstract: The invention relates to a pulverulent laundry and cleaning detergents ingredient, to a process for its preparation and to its use.

Abstract: The present invention relates to the perfumery industry. It concerns more particularly an alcohol, ester, ether or ketone derivative having a spiro-type skeleton, the latter being substituted by short alkyl groups. The invention also relates to the use of the invention compounds as perfuming ingredients, able to impart a woody and/or aromatic, as well as to the perfumed articles or perfuming compositions comprising as active ingredient a compound of formula (I).

Abstract: This invention provides compounds and methods for treating inflammation. The compounds modulate the core 2 oligosaccharide-mediated binding of inflammatory cells, such as neutrophils, to endothelial cells and other myeloid cells. Significantly, the of the invention methods block inflammation without affecting lymphocyte trafficking. In some embodiments, the compounds inhibit the activity of a core 2 GlcNAc transferase that is involved in synthesizing the core 2 oligosaccharides.

Abstract: The present invention relates generally to a method of inducing, stimulating or otherwise facilitating bronchoprotection in humans and animals by modulating bronchial constriction and/or inflammation. The present invention is predicated in part on the identification of receptors in airway epithelium which mediate inhibition of bronchoconstriction and/or inflammation following their activation. More particularly, the present invention identifies that activation of protease activated receptors (PARs) results in relaxation of airway epithelium. Activation of airway epithelium PARs inhibits bronchoconstriction and/or inflammation and thereby mediates bronchoprotection of the airways. The present invention further provides a method for the prophylaxis and treatment of disease conditions in airways such as asthma and bronchitis and further provides methods for the diagnosis and screening of agents useful in the prophylaxis and treatment of airway disease conditions.

Abstract: The present invention relates to a method of treating insulin resistance or Syndrome X by administering a therapeutically effective amount of a somatostatin agonist or a pharmaceutical composition comprised of a somatostatin agonist to a patient suffering from insulin resistance or Syndrome X.