Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.

Abstract: In non-volatile storage device using a variable resistance material, when a crystal state and a noncrystalline state co-exists in the variable resistance material, a crystallization time is shorted, resulting in decrease of the time to maintain information stored. Heat radiation is not rapidly performed during rewriting and thus it takes a long time to complete the rewriting due to a low thermal conductivity of a material contacting the variable resistance material. According to the present invention, a contact area between a variable resistance material and a lower electrode, and a contact area between the variable resistance material and an upper electrode are made equal to each other, thereby unifying a current path. The invention provides a structure in which a material having a high thermal conductivity is disposed so as to contact a sidewall of the variable resistance material, and its end portion is made to contact the lower electrode as well.

Abstract: Disclosed are methods of reducing the bandgap of a metal oxide by alloying a binary oxide with a Group VI element that is isovalent with oxygen. The Group VI element substitutes for at least a portion of the oxygen in the binary oxide to form the alloyed, ternary oxide. Such ternary oxide electrodes are useful as photoelectrodes in photoelectrochemical cells that spontaneously, as a result of solar power, cleave (split) water molecules to produce hydrogen gas. Exemplary ternary metal oxide alloys useful in the present embodiments include W[(VI)xO1?x]3 and Ti[(VI)xO1?x]2, and the Group VI element may be S, Se, and Te, and combinations thereof.

Abstract: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.

Abstract: An integrated circuit having carbon nanotube interconnects contains input/output pads situated on the upper surface, the pads arranged in an array having at least two rows. Carbon nanotubes are disposed on the input/output pads to provide electrical and thermal interconnection of the integrated circuit chip to another circuit such as a printed circuit board. The carbon nanotubes can be plated with one or more overlayers of metal.

Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

Abstract: In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed. A quantum well structure in which a well layer made of any one of InGaAlAs, InGaAsP, and InGaAs, and a barrier layer made of either one of InGaAlAs or InAlAs is used for an optical absorption layer of an EA modulator. By properly determining detuning at a temperature of 25° C. and a composition wavelength of the barrier layer in the quantum well structure used for the optical absorption layer, it can be realized to suppress the insertion loss, maintain the extinction ratio, and reduce chirping simultaneously over a wide temperature range from ?5° C. to 80° C.

Abstract: An electrode is described. The electrode includes an electrode plate and a sensor circuit electrically connected to the electrode plate. The electrode can include a gimbaled contact element and a conductive flexure element connecting the electrode plate and the gimbaled contact element and providing a conductive path therebetween. In another implementation, the electrode can include a contact element having an upper surface in contact with the electrode plate and a lower surface configured to contact a subject's skin. The contact element is adapted to contain a conductive fluid and provide a conductive path from the subject's skin to the sensor circuit by way of the electrode plate therebetween.

Abstract: Provided are a photovoltaic device and a lamp and a display device using the same. The photovoltaic device includes a substrate; a conductive electric field enhanced layer including a plurality of partial electric field crowding end portions disposed on the substrate; an electron amplification layer disposed on the electric field enhanced layer and formed of a material that emits secondary electrons; and a photoelectric material layer disposed on the electron amplification layer. The photovoltaic device can be applied to various fields and used as a light emitting display device (OLED) to generate light with high luminance at a low voltage.

Abstract: A detecting apparatus for detecting information of a liquid object or sample includes a transmission path, a THz wave supplying unit, a THz wave detecting unit, and an infiltrative holding member for infiltration and holding of a liquid object. The supplying unit supplies an electromagnetic wave in a frequency range between 30 GHz and 30 THz to the transmission path. The detecting unit detects the THz wave transmitted through the transmission path. The infiltrative holding member is set at a location containing at least a portion in which an electric field distribution of the THz wave propagating along the transmission path extends.

Abstract: An electronic device comprising a semiconductive material of Formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

Abstract: An electronic device, such as a thin film transistor, containing a polymer of the formula or structure wherein at least one of each R, R1, R2, R3, R4, R5 and R6 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro; x and y represent the number of R substituents; a and b represent the number of rings; and n represents the number of repeating groups or moieties.

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of, for example, of the Formula (I) wherein R represents alkyl, alkoxy, aryl, heteroaryl or a suitable hydrocarbon; each R1 and R2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R3 and R4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR? wherein R? is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Abstract: An electronic device comprising a semiconductive material of Formula or structure (I) wherein each R1, R2, R3 and R4 are independently hydrogen (H), a heteroatom containing group, a suitable hydrocarbon, or a halogen; Ar and Ar? each independently represents an aromatic moiety; x, y, a, b, c, d, e, f and g represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR?? wherein R?? is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Abstract: An electronic device like a thin film transistor containing an arylamine polymer of the formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of repeating units.

Abstract: An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.

Abstract: An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

Abstract: An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Abstract: An electronic device comprising a heterojunction, wherein the heterojunction comprises a blend comprising an electron donor and an electron acceptor; and wherein the blend is treated so as to form one or more linkages between the electron donor and/or electron acceptor in the treated blend.

Abstract: Electroluminescent devices have an electroluminescent layer incorporating iridium complexes with 2-benzo[b]thiophenyl and benzimidazole ligands such as bis[thiophen-2-yl-pyridine-C2,N?]-2-(2-pyridyl)-benzimidazole iridium

Abstract: Disclosed is an organic light emitting display which avoids an occurrence of Newton's rings in coalesced substrate and sealing substrate. A first substrate includes a pixel region and a non-pixel region. An array of organic light emitting pixels including a first electrode, an organic layer, and a second electrode is formed at the pixel region. A second substrate opposes the first substrate. A frit is disposed between the non-pixel region of the first substrate and the second substrate for interconnecting the first substrate and the second substrate. The second electrode of the array directly contacts a region corresponding to a pixel region of the second substrate.

Abstract: An organic light emitting device (OLED) is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors electrically connected to each other and, for each subpixel, a first connecting electrode electrically connected to one of the transistors. Each subpixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed in the non light-emitting region and electrically connected to the respective first connecting electrode.

Abstract: A system and method for providing an active array of temperature sensing and cooling elements, including an active heatsink which further includes an active temperature sensing layer, a thermoelectric cooling layer, and a heatsink, which further includes a plurality of cooling channels. The temperature sensing element within the active temperature sensing layer includes a plurality of switching transistors, a linear transistor, a current sense resistor, a thermistor, a voltage sensing bus, a voltage setting bus, a current measurement bus, a measurement switching bus, a sense control bus, a storage capacitor, and a supply voltage, all under the control of a process control computer. The method of using an active array of temperature sensing and cooling elements includes the steps of aligning the shadow mask, depositing the material, detecting a thermal gradient, and controlling the thermoelectric cooling.

Abstract: An electrical arrangement has a first electrically conductive contact point (10) and a second electrically conductive contact point (20), the first and the second contact point being arranged at a distance (x) from one another and being electrically connected to one another via a wire connection arrangement (30), the wire connection arrangement (30) being formed by at least two wire connections (31-1, 31-2, . . . , 31-n-1, 31-n) which have respectively a first end (32-1, 32-1, 32-n-1, 32-n) and a second end (33-1, 33-2, . . . , 33-n-1, 33-3), and the first end of a wire connection (30-2, . . . , 30-n) and the second end of a preceding wire connection (30-1, . . . , 30-n-1) being in direct contact with one another.

Abstract: A transistor includes a first gate electrode, a second gate electrode formed over the first gate electrode, a source electrode formed above the first gate electrode, a drain electrode formed above the first gate electrode, and a semiconductor layer covering at least part of the source electrode and at least part of the drain electrode and disposed between the first gate electrode and the second gate electrode. The source electrode includes a first main portion extending in a direction and at least one first protrusion protruding in a direction intersecting the direction in which the first main portion extends. The drain electrode includes at least one second protrusion protruding toward the first main portion.

Abstract: On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

Abstract: A liquid crystal display includes first pixels and second pixels, a plurality of gate lines to transmit gate signals, and a plurality of pairs of first and second data lines crossing the gate lines, the pairs of first data lines and second data lines facing each other with a pixel interposed there between. Each of the first pixels and the second pixels includes pixel electrode and each pixel electrode includes a first sub-pixel electrode and a second sub-pixel electrode. A first drain is electrode disposed on the right of the first data line, and a second drain electrode is disposed on the left of the second data line. The first drain electrode is connected to the first sub-pixel electrode while the second drain electrode is connected to the second sub-pixel electrode in the first pixels, and the first drain electrode is connected to the second sub-pixel electrode while the second drain electrode is connected to the first sub-pixel electrode in the second pixels.

Abstract: A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.

Abstract: The present invention discloses a four-mask method of manufacturing an array substrate of a liquid crystal display device and the liquid crystal display device having the same array substrate.

Abstract: A nanowire light emitting device and method of fabricating the same. The nanowire light emitting device includes: a substrate; a first electrode layer formed on the substrate; a plurality of nanowires vertically formed on the first electrode layer, the nanowire having a p-type doped portion and an n-type doped portion formed separately from each other on both sides thereof; a light emitting layer formed between the p-type doped portion and the n-type doped portion; and a second electrode layer formed on the nanowires, wherein the p-type doped portion is formed by chemically binding a radical having an only half-occupied outermost orbital shell to a corresponding surface of the respective nanowires so as to donate an electron to the radical.

Abstract: A structure of heat dissipation of implant type light emitting diode package having a heat column and a method of manufacturing the same include a substrate, a heat column, and a light emitting diode chip, and the heat column is implanted directly onto a predetermined position of the light emitting diode chip of the substrate and penetrated through both surfaces of a circuit board, and a distal surface of the heat column is coupled with the light emitting diode chip to form a heat conducting end, so that the operating heat produced by a light emitting diode can be dispersed from the package structure through the heat column, so as to achieve an optimal heat dissipating effect.

Abstract: An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is electrically connected to the respective one of the transistors. Each sub-pixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed within the non light-emitting region and projects toward the first substrate. The first and second substrates are electrically connected via the connection of the first and second connecting electrodes.

Abstract: To provide an exposure device and an image forming apparatus using the same, in which the exposure device can detect light intensity with improved reliability and thereby controls the light intensity with high precision, the exposure device includes an EL (electro-luminescence) element having a first electrode (an anode), a second electrode (a cathode), and a light emitting layer disposed between the first and second electrodes, thereby forming a light emitting unit, and a light detecting element detecting light emitted from the EL element, in which the EL element and the light detecting element are stacked onto each other. The light detecting element is provided at an inner side of a principal surface of the electrode (the anode) which is disposed closer to the light detecting element than the other electrode. A light emitting area of the EL element is provided at an inner side of a principal surface of the light detecting element.

Abstract: A light emitting device is provided which has at least a light emitting layer between a pair of electrodes, wherein the light emitting layer is divided into plural layers in the thickness direction thereof, and an intermediate layer containing at least one of a charge transport material or a light emitting material is positioned between each of the divided layers of the light emitting layer. A light emitting device having a high external quantum efficiency is provided.

Abstract: An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.

Abstract: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

Abstract: Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device.

Abstract: In a light emitting diode package or a light emitting diode, a cover body having an opening with a reflecting surface is attached on an upper portion of a base body on which a light emitting diode element is mounted. The base body is formed of alumina ceramics having a pore diameter of 0.10 to 1.25 ?m or a porosity of 10% or more, and a thermal via is formed in the base body. Accordingly, it is possible to improve luminance and heat radiating characteristics of the light emitting diode package and the light emitting diode which uses alumina ceramics.

Abstract: A compliant interface is added above the top housing of a light source, such as an LED during LED manufacture. The compliant interface allows for a low light loss transfer between the surface of the light guide material. The compliant structure is, in one embodiment, a light transparent compliant silicone molded (by curing the liquid silicone) onto the top surface of the light source. In one embodiment, the compliant interface can be integrated as part of the encapsulated material surrounding the LED chip.

Abstract: A wiring board used for mounting an LED bare chip capable of firmly bonding the LED bare chip and improving yield. In a printed wiring board 2, a distance D between wiring patterns 81 and 85 disposed so as to oppose each other is the smallest at a position nearest to a center point (G) of an LED chip 14 disposed at a designed location, and increases with an increasing distance from the point G. In addition, pattern edges 83 and 87 of the wiring patterns 81 and 85 recede in the direction of widening the distance D as a distance from the center point G increases with respect to electrode edges 148 and 149 of the LED chip 14.

Abstract: An optical assembly (10) includes a rigid mount (12) with a recess (26) proximate a first side thereof, a substrate (14), and an optical die (16) flip-chip bonded to the substrate (14). The substrate (14) is secured to the first side of the mount and includes a plurality of die bonding elements (40), a plurality of optical apertures (32), and a plurality of external bonding elements (42). A plurality of traces (44) interconnect the die bonding elements (40) and the external bonding elements (42). The optical die (16) includes a plurality of optical elements, each element including an optical signal interface (48), the die being bonded to the plurality of die bonding elements (40) such that the optical signal interface (48) of each element is in registry with an optical aperture (32) of the substrate (14) and the die (16) is at least partially enclosed by the recess (26).

Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Abstract: A light emitting apparatus including a phosphor blend including two or more phosphors to provide an emission spectrum simulating the spectral power distribution of a CIE reference illuminant across at least a certain spectral range. Such an apparatus is particularly suited for color-critical applications.

Abstract: An insulated gate type thyristor includes: a first current terminal semiconductor region of a first conductivity type having a high impurity concentration; a first base semiconductor region of a second conductivity type opposite to the first conductivity type having a low impurity concentration and formed on the first current terminal semiconductor region; a second base semiconductor region of the first conductivity type having a low impurity concentration and formed on the first base semiconductor region; a second current terminal semiconductor region of the second conductivity type having a high impurity concentration and formed on the second base semiconductor region; a trench passing through the second current terminal semiconductor region and entering the second base semiconductor region leaving some depth thereof, along a direction from a surface of the second current terminal semiconductor region toward the first base semiconductor region; and an insulated gate electrode structure formed in the trench.

Abstract: An organic photo-detecting field-effect device is presented, the device comprising a first layer comprising an organic semi-conducting material, the first layer acting as an accumulation layer and as a charge transport layer for a first type of charge carriers, and a second layer comprising a second material, the second layer acting as a an accumulation layer for a second type of charge carriers. Charges collected in the second layer influence the charge transport in the first layer. The second material may be an organic semi-conducting material or a metal. At the interface between the first layer and the second layer a heterojunction is formed in the case of an organic semi-conducting second material, and a Schottky barrier is formed in the case of a metal second material, giving rise to an efficient exciton splitting. Different geometries and operation modes facilitating the removal of the collected photo-generated charge carriers during the reset period of the device are presented.

Abstract: Electronic switch device having a smaller number of component parts. Resistor R1 is connected between gate and source of a PchTr P1 and resistor R2 is connected between gate of the PchTr P1 and one end of pushbutton switch SW. Resistor R3 is connected between drain of the PchTr P1 and gate of NchTr N1, and resistor R4 is connected between gate and source of the NchTr N1. The NchTr N1 has source connected to one end of DC power supply 11 and to one end of load 12, while having drain connected to the gate of the PchTr P1. The PchTr P1 has source connected to the other end of the DC power supply 11, while having drain connected to the other end of the load 12. Capacitor C has one end connected to one end of pushbutton switch SW, while having the other end connected to one end of the DC power supply. The pushbutton switch SW has the other end connected to the gate of the NchTr N1. The PchTr P1 is alternately repeatedly rendered conductive and non-conductive for each opening/closing operation.

Abstract: A semiconductor device and method of manufacturing the same includes an n?-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n?-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.

Abstract: The solid-state imaging device of the present invention includes: photodiodes which are two-dimensionally arranged; light condensers each of which condenses light and is provided in a position to correspond to two of the photodiodes which are adjacent to each other; and separating units each of which separates the light entering through the light condensers into first light having a wavelength within a predetermined range, and second light having a wavelength out of the predetermined range, and is provided in a position to correspond to one of the light condensers.

Abstract: Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.

Abstract: The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.