Abstract: The invention provides a two-dimensional ion trap, comprising a plurality of elongate electrodes positioned between first and second end electrodes, the plurality of electrodes and first and second end electrodes defining a trapping volume. A controller in electrical communication with the plurality of elongate electrodes and the first and second end electrodes is configured to progressively vary a periodic voltage applied to at least one of the plurality of elongate electrodes to cause ions to be radially ejected from the ion trap in order of their mass to charge ratios. Concurrently, the controller is configured to progressively vary a DC offset of least one of the first and second end electrodes with respect to the plurality of elongate electrodes.

Abstract: An apparatus and method are disclosed for efficient detection of ions ejected from a quadrupolar ion trap, in which the ions are ejected as first and second groups of ions having different directions. The first and second groups of ions are received by a conversion dynode structure, which responsively emits secondary particles that are directed to a shared detector, such as an electron multiplier. The conversion dynode structure may be implemented as a common dynode or as two dynodes (or sets of dynodes), with each dynode positioned to receive one of the groups of ions.

Abstract: An electrode network for N parallel ion traps, wherein N is an integer larger than 1, includes at most 2N+2 electrodes, which form N trapping volumes each corresponding to a respective one of the N parallel ion traps. Also provided is a parallel mass spectrometer, comprising: a vacuum chamber and a network of at most 2N+2 electrodes disposed in the vacuum chamber and held in fixed positions with respect to each other, the network of electrodes forming N trapping volumes each corresponding one of N parallel ion traps. The network of electrodes may be arranged in first and second rows of electrodes. A plurality of detectors is positioned to receive ions ejected from the trapping volumes through spaces between adjacent electrodes in the first row of electrodes.

Abstract: A system and method are disclosed for effectively compensating for non-linear field components created by a field distortion feature in a quadrupolar ion trap, compensation provided by a geometric surface shaping which reduces the non-linear field components and creates a minimal centerline radio-frequency potential in the ion trap. The ion trap includes a centerline that passes longitudinally through a trapping volume inside of the ion trap, a pair of Y electrodes with inner Y electrode surfaces that are approximately parallel to the centerline, and a pair of X electrodes with inner X electrode surfaces that are approximately parallel to the centerline. The X electrodes have one or more ejection slots through which trapped ions are ejected from said ion trap. The inner Y electrode surfaces each have a Y radius of curvature, and the inner X electrode surfaces each have an X radius of curvature. The X radius of curvature is selected to be smaller than the Y radius of curvature.

Abstract: A system and method are disclosed for effectively compensating for an unbalanced or non-zero centerline radio-frequency potential in a quadrupolar ion trap, the unbalanced centerline potential created by a compensation feature that minimizes non-linear field components created by one or more ejection slots in the ion trap. The ion trap includes a centerline that passes longitudinally through a trapping volume inside of the ion trap, a pair of Y electrodes with inner Y electrode surfaces that are approximately parallel to the centerline, and a pair of X electrodes with inner X electrode surfaces that are approximately parallel to the centerline. The X electrodes have ejection slots through which trapped ions are ejected from the ion trap. A Y signal with a Y signal amplitude is coupled to both of the Y electrodes. An X signal with an X signal amplitude is coupled to both of the X electrodes.

Abstract: An ion guide having a plurality of spheroidal or similarly shaped electrodes is disclosed. The electrodes are arranged in pairs about a central ion flow axis, and an RF voltage is applied in a prescribed phase relation to create an electric field that focuses and radially confines an ion beam. A defocusing effect associated with the electrode shape may be reduced by placement of a separate skirt electrode immediately downstream in the ion path, or by forming the electrodes in a composite structure, whereby the trailing portion of the electrode is fabricated from or coated with an insulative material.

Abstract: A FAIMS cell including one of side-to-side cylindrical geometry electrodes and stacked-plate electrodes is adapted with a medial surface feature for focusing ions along a lateral direction within an ion separation region of the FAIMS cell. The medial surface feature is provided as one of a recessed channel within an electrode surface and a protruding ridge extending from an electrode surface. The medial surface feature is aligned with a defined aggregate direction of ion travel within the ion separation region for focusing ions along the lateral direction in opposition to the tendency of ions to spread out as a result of space charge repulsion, ion-ion repulsive forces, diffusion and gas flows. The electrical field and fluid dynamic effects produced by the medial surface feature beneficially affect ion transmission efficiency through the FAIMS cell.

Abstract: In a system for analyzing samples by mass spectrometry, analyte ions are analyzed first by field asymmetric ion mobility spectrometry (FAIMS) before being analyzed by a mass analyzer. The analyte ions are produced in an ion source operating at near atmospheric pressure and transferred via a dielectric capillary into the vacuum system of the mass analyzer.

Abstract: Apparatus and method for measuring and controlling static charge inside vacuum equipment. In-line gas ionizers deliver gas ions to pass-through doors, load-locks, vacuum cluster vent lines, or neutralizing chambers. Static charge measurement is accomplished while the wafer or product remains in a vacuum or near-vacuum. In one embodiment, a neutralizing chamber and measurement chamber are combined. This invention has application in semiconductor, disk drive, and flat panel industries.

Abstract: An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.

Abstract: An electron microscope or scanning probe microscope calibration device can provide accurate length calibrations in the ranges from sub-nanometer to several micrometers. The device material consists of a series of periodic structures grown on a single crystal semiconductor substrate. The device material is prepared as a cross-sectional sample for viewing the periodic structures in an electron or scanning probe microscope. The measurements of the indicator features are very accurate and verifiable, being directly referenced to the crystal lattice spacing of the substrate material of the device, as determined by cross-sectional TEM or XRD of periodic structures. The device provides consistency and accuracy across these calibration ranges, and between electron and scanning probe microscopes.

Abstract: In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.

Abstract: The present invention is directed to a defect imaging device that has an energy beam that is directed at a device under test. The energy beam creates positrons deep within the material of the device under test. When the positrons combine with electrons in the material they produce a pair of annihilation photons. The annihilation photons are detected. The Doppler broadening of the annihilation photons is used to determine if a defect is present in the material. Three dimensional images of the device under test are created by directing the energy beam at different portions of the device under test.

Abstract: A method for accurately measuring feature sizes and quantifying the beam spot size in a CDSEM at real time is provided. The inventive method is based on a scanning microscope and it works on both conductive and non-conductive features. The measurement of conductive feature includes first providing a conductive feature on a surface of a substrate (the substrate maybe an insulator, a semiconductor or a material stack thereof). The conductive feature is then connected to ground and thereafter an electron beam probe raster scans the sample. When the electron beam probe hits the conductive feature the spot will have a negative potential. The potential difference between the spot and the ground will induce an electrical current flow. When the electrical beam is off the conductive feature, there will be no current flow. Therefore, by measuring the current response to the location of the beam spot, the dimension of the conductive feature can be derived.

Abstract: In a specimen analyzing apparatus such as a transmission electron microscope for analyzing the structure, composition and electron state of an observing specimen in operation by applying external voltage to the specimen to be observed, a specimen support (mesh) including a mesh electrode connectable to external voltage applying portions of the specimen and a specimen holder including a specimen holder electrode connectable to the mesh electrode and current inlet terminals as well are provided. Voltage is applied externally of the specimen analyzing apparatus to the external voltage applying portions of the specimen through the medium of the specimen holder electrode and mesh electrode.

Abstract: In electron holography observation using a transmission electron microscope, searching of conditions of an electron optical condition which are necessary for realizing a requested spatial resolution is sophisticated and for persons unaccustomed to operation of the electron microscope, the observation is time consuming work. In addition to the fundamental electron microscope proper, an input unit for inputting a spatial resolution requested in the holography observation, a calculation unit for calculating positions of electron biprism and specimen necessary for realizing the requested spatial resolution from the inputted value and parameters characteristic of the device and mechanisms for moving the two positions for realizing the obtained calculation results are provided.

Abstract: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen.

Abstract: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 ?m with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons.

Abstract: The present invention provides a stable charged particle beam apparatus to enable high-resolution observation by reducing the influence of the noise of a large number of power supplies used in an aberration corrector. The charged particle beam apparatus that has: an SEM column for irradiating an electron beam onto a specimen and making the electron beam scan it; a specimen chamber for housing a specimen stage on which the specimen is placed and held; a detector for detecting secondary electrons generated by the scanning of the electron beam; display means for displaying an output signal of the detector as an SEM image; and a control unit for controlling component parts including the SEM column, the specimen chamber, and the display means.

Abstract: An electron probe X-ray analyzer capable of automatically setting appropriate analytical conditions if there are unknown compounds by performing analysis under the analytical conditions adapted for analysis points having different compositions in a case where the numerous analysis points having the plural compositions are analyzed by WDS (wavelength-dispersive X-ray spectrometer). At each analysis point, the analyzer performs quantitative analysis using EDS (energy-dispersive X-ray spectrometer) permitting easy and quick analysis. Based on the results, chemical compounds are identified. If the results indicate that there is any new compound, analytical conditions adapted for the new compound are selected. If the new compound is already registered in a database, the analytical conditions are read from the database. Then, quantitative analysis is performed using WDS.

Abstract: Charged particle beam equipment enables the simultaneous measurement and correction of magnification errors in both X and Y directions in one measurement without requiring the elimination of displacement, if any, in rotation direction between the direction of a periodic structure pattern of a sample having a known periodic structure and the X or Y direction on an electron image of the sample. The charged particle beam equipment of the invention enables the simultaneous measurement of magnification errors in the X and Y directions by FFT transformation and coordinate transformation of an electron image, even when there is a displacement in rotation direction between the direction of the periodic structural pattern and the X or Y direction on the electron image of the sample.

Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5.

Abstract: The subject invention pertains to an apparatus and method for collecting 2-D data slices of a specimen. Embodiments can incorporate a lapidary platen and an image recording system to image a specimen. The lapidary wheel platen can provide an imaging plane such that an image can be taken as the lapidary wheel platen abrades a surface of the specimen. A specimen mount can maintain the surface of the specimen properly aligned in the image plane. The imaging system can be a continuous recording system such as a video camera, a discrete recording system such as a flatbed scanner, or combinations of continuous and discrete recording systems to simultaneously collect two distinct data sets. The 2-D data set(s) can then be processed to create intricate 3-D color models.

Abstract: An electron-beam size measuring apparatus includes: electron beam irradiating means that irradiates an electron beam on a surface of a sample; detection means that detects electrons emitted from the sample; distance measurement means that measures the distance between the sample and a secondary electron control electrode of the detection means; a stage on which the sample is mounted; and control means which adjusts the height of the stage so that the distance measured by the distance measurement means would be equal to a predetermined fixed distance, which applies a control voltage to the secondary electron control electrode of the detection means, the control voltage predetermined so as to allow the sample surface potential to become constant with the sample positioned at the fixed distance, and which causes the electron beam to be irradiated by applying a predetermined accelerating voltage.

Abstract: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: A system may include emission of megavoltage radiation from a megavoltage radiation source, acquisition of a first image using an imaging device while first megavoltage radiation is emitted from the megavoltage radiation source and while a plurality of elements is between the megavoltage radiation source and the imaging device, and determination of an amount of scatter radiation based at least on areas of the acquired image corresponding to the plurality of elements. In some aspects, at least one of the plurality of elements is substantially focused to a focal spot of the megavoltage radiation source.

Abstract: A sensor array is formed using sensor elements including first and second intersecting arrays of wires separated by radiation sensitive material. A common signal is input to the first array of the wires and signals from the second array of wires are summed to produce an output signal. The state of the radiation sensitive material is altered by incident radiation transmitted between the wiring and determines the value of the output signal. A plurality of the sensor elements arranged in columns and rows form the sensor array and may be used for a plurality of image analysis applications including pattern recognition and image tracking. Nanowires may be used as the intersecting arrays of wires and the sensor array may be combined with a parallel electron beam source to form a compact electron microscope.

Abstract: Device for retrieving electrical charge, resulting from electromagnetic radiation energy incident on a temperature sensor array, the temperature sensor array including a plurality of temperature sensor rows, each temperature sensor row including a plurality of temperature sensors, the device including a retrieval module array and a row select circuit, the retrieval module array including a plurality of retrieval module rows, each retrieval module row including a plurality of retrieval modules, each of the retrieval modules being operative to accumulate the electrical charge from a single temperature sensor, the row select circuit being coupled with the temperature sensor array, and with the retrieval module array, the row select circuit being operative for coupling the retrieval modules of each of the retrieval module row of the retrieval module array with a respective temperature sensor of a temperature sensor row of the temperature sensor array, for a time period which is greater than the frame acquisition

Abstract: This electronic detection device comprises a substrate and at least one microstructure, said microstructure comprising a membrane which extends substantially facing and at a distance from said substrate, said membrane being mechanically attached and electrically connected to at least one longilineal retention element which is mechanically and electrically connected to said substrate via at least one post. The device also comprises at least one stiffener element extending over at least one of the main faces of said microstructure.

Abstract: A gamma ray detector (50) comprises a plastic scintillation body (52) arranged to receive incident gamma rays to be detected. Photons are generated in response to the gamma rays by excitation and de-excitation processes in the scintillation body. The photons are detected using at least one photodetector (56) which generates an output signal representative of the energy of the gamma rays. The scintillation body has a detection surface to receive the gamma rays and a thickness in a direction substantially orthogonal to the detection surface that is not greater than 5 cm. Deconvolution techniques can be used to improve the output signal; the thinness of the scintillation body allows sufficiently accurate results to be obtained that individual isotopes can be readily identified. The detector can be usefully employed in portal radiation monitors.

Abstract: A scintillator crystal represented by the following general formula (1). Ln(1?y)CeyX3:M ??(1) wherein Ln(1?y)CeyX3 represents the chemical composition of the matrix material, Ln represents one or more elements selected from the group consisting of rare earth elements, X represents one or more elements selected from the group consisting of halogen elements, M is the constituent element of the dopant which is doped in the matrix material and represents one or more elements selected from the group consisting of Li, Na, K, Rb, Cs, Al, Zn, Ga, Be, Mg, Ca, Sr, Ba, Sc, Ge, Ti, V, Cu, Nb, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pb, Ag, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl and Bi, and y represents a numerical value satisfying the condition represented by the following inequality (A): 0.0001?y?1.

Abstract: A radiation imaging device which, as a whole, can be further reduced in size and thickness with the area of an imaging area sufficiently achieved. A scintillator film 2 emitting light with a predetermined wavelength in response to an incident of radiation is accommodated in a case 5 while being sandwiched between an image sensor 1 and a circuit board 3. The image sensor 1 is provided such that its photodetecting section 11 is in contact with the scintillator film 2 and its electrode section 12 is projected and exposed to the outside from the scintillator film 2. The electrode section 12 is electrically connected by a wire 6 to an electrode section 32 of the circuit board 3.

Abstract: A radiation detector for X-rays or gamma rays is disclosed. In at least one embodiment, the radiation detector includes an array of scintillation detectors and a reflector layer that separates the latter from one another and is formed essentially by a binding agent matrix and particles, incorporated therein, of a light-reflecting material. Further, the reflector layer is interspersed with microcavities.

Abstract: A method includes detecting a neutron based on a time proximity of a first signal and a second signal. The first signal indicates detection of at least one of a neutron and a gamma ray. The second signal indicates detection of a gamma ray.

Abstract: A detection apparatus for detecting perforation holes of a cinematographic film comprises at least one light source, at least one scanning sensor, which is arranged so as to receive light emitted by the light source after interaction with a perforation zone of the film, and an evaluation circuit for detecting, by means of an output signal of the scanning sensor, when an edge of a perforation hole passes through between light source and scanning sensor. The light source emits light which is polarized with a first polarization and the scanning sensor is sensitive selectively to light with a second polarization.

Abstract: The present invention provides a compact electron lens causing little aberration, and a charged particle beam apparatus such as a scanning electron microscope that is super compact and offers a high resolution. An upper magnetic pole and a sample-side magnetic pole are magnetically coupled to the respective poles of a permanent magnet that is made of a highly strong magnetic material such as a rare-earth cobalt system or a neodymium-iron-boron system, that is axially symmetrical, and that has a hole in the center thereof. An inner gap is created on the side of a center axis. Thus, a magnetic lens is formed axially. Moreover, a semi-stationary magnetic path that shields an outside magnetic field and has the magnetic reluctance thereof regulated is disposed outside. The sample-side magnetic pole and magnetic path defines a region where magnetic reluctance is the highest outside the permanent magnet.

Abstract: A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction.

Abstract: In an analyzing electromagnet 40, each of magnetic poles 80 in which the plan-view shape is curved is divided along the traveling direction of an ion beam 2 into three partial magnetic poles 81 to 83. The gaps of the first and third partial magnetic pole pairs 81, 83 as counted from the inlet for the ion beam 2 are widened toward the outside of the curvature, and the gap of the second partial magnetic pole pair 82 is widened toward the inside of the curvature.

Abstract: A magnetic field intruding into an electron lens area from outside an X-ray image tube is detected by a magnetic field sensor. A magnetic field for offsetting the magnetic field is generated by a coil arranged in an input surface area of the X-ray image tube, so that the distortion is corrected by removing the effects of the magnetic field. The magnetic field sensor is arranged in an area surrounded by a magnetic shield of the X-ray image tube and constituting an outer peripheral area on the electron lens area side distant from the input surface area of the X-ray image tube. The magnetic field sensor is such that the effects of the magnetic field generated by the coil are reduced and the magnetic field intruding into the electron lens area is accurately detected.

Abstract: An ion source is capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions. In certain example embodiments, techniques for reducing the costs associated with producing ion sources and/or elements thereof are provided. Such techniques may include, for example, forming the inner and/or outer cathode(s) from 1018 mild steel and/or segmented pieces. Such techniques also or instead include, for example, forming the ion source body from a single steel U-channel, or from segmented pieces making up the same. These techniques may be used alone or in various combinations.

Abstract: In a particle beam irradiation method and a particle beam irradiation apparatus in which depth direction irradiation field spread and lateral direction irradiation field spread are performed, an irradiation dose in each of irradiation layers of an irradiation target is made substantially constant, and control is simplified. The depth direction irradiation field spread is made the active irradiation field spread in which plural irradiation layers having different ranges in an irradiation direction of the particle beam are superimposed, the lateral direction irradiation field spread is made the active irradiation field spread in which irradiation spots of the particle beam are superimposed in the lateral direction, and a bolus having a shape along a deepest part of the irradiation target in the depth direction is disposed to cross the particle beam.

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a blanker which controls, in accordance with a dose pattern including a plurality of pulses, whether to allow a charged particle beam to strike the substrate, and a controller which executes calibration for correcting the dose pattern to obtain a pattern having the target line width.

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

Abstract: A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.

Abstract: A charged particle beam irradiation system and a charged particle beam extraction method which can prevent erroneous irradiation of a charged particle beam in the direction of advance of the charged particle beam. The system and method are featured in stopping supply of an ion beam to one or more of a plurality of angle zones in each of which a target dose is attained, the angle zones being formed by dividing an RMW in a rotating direction thereof, and in allowing the supply of the ion beam to one or more other angle zones in each of which a target dose is not yet attained. The invention can easily adjust beam doses at various positions in an affected part of the patient body in the direction of advance of the ion beam, and can greatly reduce the probability of erroneous irradiation that the beam dose becomes excessive or deficient at the various positions within the affected part of the patient body in the direction of advance of the ion beam.

Abstract: An irradiating device and a method for controlling it are provided. The device comprises an electron accelerator and a scanning box connected to the electron accelerator, wherein the scanning box is provided with a target, an electron beam exit window positioned at left or right side of the target and a scanning magnet. The device integrates the functions of both the existing irradiating device outputting electron beams and those outputting X-rays. When the scanning magnet is in operation, the irradiating device outputs electron beams; and when the scanning magnet is not in operation, the irradiating device outputs X-rays. Therefore, the device is capable of outputting two radiation sources so as to meet requirements for radiation-processing articles with different sizes.

Abstract: An amorphous carbon layer sticking on a carbon nanotube surface is remarkably reduced when a carbon nanotube is joined to a conductive substrate by bringing a single fibrous carbonaceous material in contact with the tip of the conductive substrate and covering at least a part of the contact portion with a conductive material while at lest either of the fibrous carbonaceous material or the conductive substrate is heated in a vacuum.

Abstract: The present invention provides a charged particle beam device for irradiating a specimen with ions. The charged particle beam device comprises a gas field ion source unit for generating a beam of ions, the gas field ion source having an emitter unit having an emitter unit tip; and a gas supply system for directing gas to the emitter unit tip. The gas supply system comprises an array of capillary tubes. Further, the present invention provides a method for irradiating a specimen with ions by operating a charged particle beam device having a gas field ion source, wherein the method comprises the step of directing a gas flow to an emitter unit tip, wherein the gas flow has a gas beam aperture angle of 3° or less.

Abstract: An apparatus and method is disclosed for reducing contamination in a mass spectrometer instrument system. The system includes an ion source at a first pressure for generating ions by laser desorption/ionization and an inlet aperture to a vacuum chamber at a second, lower pressure than the first pressure of the ion source. A sample plate within the ion source supports a sample deposited thereon and a laser can be configured to generate laser pulses striking at least a portion of the sample at an angle of incidence from about 0 to about 80 degrees to the center line of a first ion optical axis of a mass analyzer, producing a plume. A combination of the angle of incidence of the laser pulses and the distance between the sample plate and the inlet region aperture can reduce neutral contaminants in the plume from being drawn into the inlet aperture.