Abstract: The invention provides a solenoid actuated valve with a plunger which moves in a sleeve under influence of a magnetic field from the solenoid and further comprising a damping device for reducing noise and wear caused by the plunger when it bounces against a top part located in the sleeve. The damping device comprises a first part which forms the limit of the travel of the plunger and another part which is allowed to move relative to the first part in a dampened movement. To enable application in a vacuum system, the damping device comprises a conduit which allows evacuation of a chamber confined between one end of the sleeve and the damping device. The invention further provides a damper for a solenoid actuated valve.

Abstract: A stopcock for connection in-line with a fluid line including a main valve body main having at least a plurality of inlets, including a stopcock valve element positioned within the main valve body that controls the flow of fluid through the inlets and a swabbable valve fitted to one of the inlets.

Abstract: A rotary metering valve arrangement comprises a rotary metering valve arranged to control the supply of fuel to a Pressure Raising and Shut-Off Valve (PRSOV), the metering valve comprising a valve plate provided with first and second latching ports and an angularly movable valve element provided with a recess registrable, in use, with the first and second latching ports to control communication therebetween, the PRSOV comprising a valve member slidable within a bore provided with third and fourth latching ports the valve member being provided with a recess registrable, in use, with the third and fourth latching ports to control communication therebetween, the second and third latching ports communicating with one another.

Abstract: A motor-operated valve includes a driving unit including a rotor and a stator, a feed screw mechanism, and a valve main body unit. In order to remove backlash intrinsic in the feed screw mechanism, a coil spring that urges a valve body in a direction away from a valve seat is arranged in a valve chamber. A spring bearing that forms a housing, in which the coil spring is housed, in the valve chamber is provided. Therefore, the large valve chamber is secured in the valve main body unit and passing sound is reduced when a fluid passes the motor-operated valve. Contact surfaces of the valve body and the coil spring can be aligning curved surfaces that absorb a bend of the coil spring.

Abstract: The present invention provides a liquid coinfusion unit that can prevent backflow. The coinfusion unit incorporates a closure mechanism (21a, 21b) for closing a fluid connection to an inlet port (14) while maintaining a fluid connection between a mixing port and an outlet port (13), thereby preventing the backflow of a medicinal liquid through the inlet port. Operation of a manipulating element (22a, 22b) by a user causes the closure mechanism to obstruct a fluid flow channel from the inlet port (14) and on release of the manipulating element, the closure mechanism returns to a fluid flow configuration.

Abstract: A thin disk portion, which extends radially, and a rib provided in an outer circumference part of the disk portion are formed in a valve body. A ring-like seal projection to be pressure-contacted with the disk portion to seal a valve is formed in a case. Because the disk portion is thin, deformation occurs along an end surface of a seal projection when the valve is sealed. Even when the seal projection is deformed due to fuel swelling or the like, sealing is enabled along the entire circumference thereof. High sealability is achieved even when the resin components are pressure-contacted with each other.

Abstract: An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.

Abstract: Describes a composition comprising a mixture of (1) a major amount of calcium hypochlorite, e.g., hydrated calcium hypochlorite, and (2) a minor amount of calcium hypochlorite-compatible hydrophobic additive (other than discrete particulate Group IIA or IIIA metal stearates) in amounts sufficient to provide the composition with reduced hydrophilic properties. The composition has a solution rate in water at standard conditions that is less than the calcium hypochlorite used to prepare the composition, but sufficient for the intended application. Describes also calcium hypochlorite compositions in which the hydrophobic additive is an organo-silicon material, or a metal oxide, e.g., amorphous precipitated silica, treated with a hydrophobizing agent, such as an organo-silicon material, e.g., an organo-silane and/or organo-siloxane material.

Abstract: The invention provides a method for the formation of small-size iron oxide particles comprising the steps of preparing a starting aqueous solution comprising at least one of ferric ions and complexes thereof, at a concentration of at least 0.1% W/W iron and a pH greater than about 1.5; maintaining said solution at a temperature lower than 55° C. for a retention time in which hydrolysis takes place, the extent of said hydrolysis being insufficient to decrease the pH by at least 0.2 units, wherein said time does not exceed 14 days, to form a system containing a modified solution; and adjusting the conditions in said system by at least one of the steps of heating the modified solution to elevate the temperature thereof by at least 10° C; elevating the pH of the modified solution by at least 0.3 units; and diluting the modified solution by at least 20%; whereby there are formed particles; wherein the majority of the particles formed are between about 2 nm and about 500 nm in size.

Abstract: Some embodiments of the invention provide solid compositions that, when exposed to or otherwise placed in an aqueous solution, will release chlorine dioxide and surfactants, producing a soapy, aqueous solution containing chlorine dioxide. These solid compositions comprise an alkali chlorite salt, a solid acid source, and a surfactant. In some other embodiments, the solid compositions produce a non-soapy aqueous solution containing chlorine dioxide. These solid compositions comprise an alkali chlorite salt and a solid acid source.

Abstract: A liquid crystal-containing composition includes a cholesteric liquid crystal, a polymer, and concave and convex portions located at the interface between a region including the cholesteric liquid crystal and a region including the polymer.

Abstract: A luminescent material is disclosed. The luminescent material may include a first compound having a host lattice comprising first ions and oxygen. A first portion of the first ions may be substituted by copper ions. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and the first compound may have an Olivin crystal structure, a ?-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the ultraviolet or visible light.

Abstract: There is provided a composition for the liquid deposition of organic active materials. In the composition the organic active material is dispersed in a liquid medium. The liquid medium is made up of 5-35% by weight of a first liquid having a boiling point greater than 160° C. and 65-95% by weight of a second liquid having a boiling point less than 130° C.

Abstract: Organic peroxide compositions are stabilized against decomposition by the use of antioxidants, resulting in increased shelf life of products made using the compositions.

Abstract: The invention relates to formulations comprising one or more polymers with semiconducting, charge transport, photoconducting and/or photo- or electroluminescent properties and one or more organic solvents, to their use for the preparation of electrooptical or electronic devices, including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, in particular by ink-jet printing, and to FETs and other semiconducting or light emitting components or devices comprising the formulations.

Abstract: The present invention relates to photoelectric conversion devices, characterized by using oxide semiconductor particles sensitized with a methine dye represented by the Formula (1): (in the Formula (1), m represents 1 to 4; n1 represents 1 to 7; p1 represents 1 to 4; X1 represents an optionally substituted aromatic residue, an optionally substituted aliphatic hydrocarbon residue, a cyano group, a phosphoric acid group, a sulfonic acid group, or a carboxyl group, a carbonamide group, and the like; L1 represents an optionally substituted aromatic residue and the like; A1 and A2 each independently represent an optionally substituted aromatic residue, a hydroxyl group, a phosphoric acid group, a cyano group, a hydrogen atom, a halogen atom and the like; the ring a1 has 1 or a plurality of halogen atoms, amide groups, hydroxyl groups, cyano groups, nitro groups, alkoxy groups, acyl groups and the like.), and solar cells made by using the same.

Abstract: A crosslinked elastomer body is composed of an electrically conductive composition comprising an electrically conductive filler and an insulative elastomer (matrix). The electrically conductive tiller is in a spherical particulate form and has an average particle diameter of 0.05 to 100 ?m. The electrically conductive filler has a critical volume fraction (?c) of not less than 30 vol % as determined at a first inflection point of a percolation curve at which an insulator-conductor transition occurs with an electrical resistance steeply reduced when the electrically conductive filler is gradually added to the elastomer. A resistance observed under compressive strain or bending strain increases according to the strain over a resistance observed under no strain when the electrically conductive filler is present in a volume fraction not less than the critical volume fraction (?c) in the composition.

Abstract: Disclosed is a near-infrared absorbing compound which does not contain antimony or arsenic, and has excellent stability, especially excellent heat resistance, light resistance and moist heat resistance. Also disclosed are a near-infrared absorbing filter, which is produced by using the near-infrared absorbing compound, and has excellent resistance such as light resistance and heat resistance, an optical filter and an optical recording medium. Specifically disclosed are a diimmonium compound represented by the formula (1) below and a near-infrared absorbing filter obtained by using such a diimmonium compound. Further specifically disclosed are a near-infrared absorbing filter wherein an adhesive layer containing the diimmonium compound is arranged on a transparent supporting body, and an optical filter using such a near-infrared absorbing filter.

Abstract: The present invention provides a near-infrared-absorbing material including: a luminescent agent, and a near-infrared-absorbing compound obtained by oxidizing a compound represented by the following formula (II): wherein R211, R212, R221, R222, R231, R232, R241 and R242 each independently represent a hydrogen atom, an aliphatic group or an aromatic group; R203, R213, R223, R233 and R243 each independently represent a substituent group; and n203, n213, n223, n233 and n243 each independently represent an integer from 0 to 4.

Abstract: A jack includes a base having a pair of spaced apart side members with a substantially horizontally oriented platform overlying a forward portion of the base. A pair of support arms pivotably connect the platform to the side members, and a lift arm is pivotably connected between the platform and the side members. A driver assembly mounted to a rear portion of the base in response to manual actuation moves the platform between a lowered and a plurality elevated positions while maintaining the horizontal orientation of the platform.

Abstract: A portable winch suitable for use in underground pipe bursting and replacement includes a mounting frame positionable at a top opening of a hole such as a receiving pit or manhole. A telescoping mast having a series of nested, top and bottom mast sections is mounted on the frame. A powered winch unit, also mounted on the frame, includes a drive unit and a cable. A guide assembly includes a sheave that guides the cable from the drive unit to the bottom mast section. Suitable means are connected to the frame for mechanically raising and lowering the mast into and out of the hole. As such, the mast according to the invention does not require assembly or disassembly at the beginning and end of each job. The mechanical means for raising and lowering the mast is preferably the powered winch unit.

Abstract: The present invention is a sheave assembly that includes a ring supported by a support assembly instead of a solid sheave wheel supported by a central axle. The support assembly may include a plurality of rollers or a curved shoe. The ring is made of a lubricated plastic material or other similar material. The ring includes a groove for retaining the wireline or cable and an inner surface that is designed to mate with the outer surface support assembly.

Abstract: One aspect of the present invention is a device for protecting a post during installation in the ground using an impact instrument. The device comprises a strike surface for receiving the instrument impact. The strike surface is disposed on a first side of the device. The device also comprises a seat for mounting on an upper portion of the post. The device generally covers the upper portion of the post when positioned thereon. Also, the seat is formed by at least one depression disposed on a second side of the device. At least part of the depression is shaped to receive the upper portion of the post inserted therein.

Abstract: High contention and energy absorption capacity system to contain vehicle's side impact configured by an anchoring plate, configured by a post having a base, a frontal plate and a base plate and said post affixed to the terrain at regular intervals, configured by two or more systems of continuous horizontal rails arranged longitudinally and attached to the post by a clamp placed in the inner side of the rail and also constituted by a separating device that is characterized by the post's leg to be comprised by two tubular profiles, mutually facing, the base plate of the post having frontal and lateral-rear openings that permit a certain controlled displacement of the post's leg, as a separating device between the post and the rail there is a shock-absorbing system having high energy capacity that serves to endow the system with a high capacity to absorb the energy resulting from the impact of a vehicle and allow it to be redirectioned.

Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.

Abstract: A ring shaped heater surrounds a chalcogenide region along the length of a cylindrical solid phase portion thereof defining a change phase memory element. The chalcogenide region is formed in a sub-lithographic pore, so that a relatively compact structure is achieved. Furthermore, the ring contact between the heater and the cylindrical solid phase portion results in a more gradual transition of resistance versus programming current, enabling multilevel memories to be formed.

Abstract: A phase change memory device comprises an insulating layer and a phase change layer formed on the insulating layer. A phase change layer has a pad portion. The pad portion is formed with at least one slit.

Abstract: A phase change memory device comprises an Insulating layer and a phase change layer formed on the insulating layer. The phase change layer has a plurality of linear portions. The linear portions extend in a first direction are spaced from each other in a second direction perpendicular to the first direction. The neighboring ones of the linear portions have ends which open.

Abstract: Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.

Abstract: A phase-change memory device according to the present invention includes a phase-change layer, a stacked heater electrode electrically connected to the phase-change layer, and a contact plug electrically connected to the stacked heater electrode. The stacked heater electrode includes at least a first electrode portion made of a first electrically conductive material and a second electrode portion provided in contact with the inner side of the first electrode portion. The second electrode portion is made of a second electrically conductive material having a resistivity lower than the resistivity of the first electrically conductive material.

Abstract: A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to subsequent processing steps or the open environment.

Abstract: A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.

Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2×1015 cm?3 or higher. The semiconductor is present in the electron emitting portion.

Abstract: A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents a nanowire-based TFET with a germanium (Ge) tunnel barrier in an otherwise silicon (Si) channel is used. A nanowire is introduced such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these nanowire Si/Ge TFETs resulting in ultra-high on-chip transistor densities.

Abstract: Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the v=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. Time tilted interferometry provides an extension of the computational power (to universal) within the context of topological protection. A known set of universal gates has been realized by topologically protected methods using “time-tilted interferometry” as an adjunct to the more familiar method of braiding quasi-particles. The method is “time-tilted interferometry by quasi-particles.” The system is its use to construct the gates {g1, g2, g3}.

Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.

Abstract: The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from which the oxide has been removed, and the step of growing a semiconductor layer 18 on the semiconductor substrate with the concavity formed in to form a quantum dot 20 of the semiconductor layer in the concavity. The concavity is formed in the semiconductor substrate by forming the oxide dot in the surface of the semiconductor substrate and removing the oxide, whereby the concavity can be formed precisely in a prescribed position and in a prescribed size. The quantum dot is grown in such a concavity, whereby the quantum dot can have good quality and can be formed in a prescribed position and in a prescribed size.

Abstract: A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.

Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.

Abstract: A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

Abstract: Spreading or keep out zones may be formed in integrated circuit packages by altering the roughness of package surfaces. The surface roughness can be altered by applying or growing particles having a dimension less than 500 nanometers. Hydrophilic surfaces may be made hemi-wicking and hydrophobic surfaces may be made hemi-wicking by particles of the same general characteristics.

Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

Abstract: Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecular cross-linking, between source/drain electrodes and an organic semiconductor layer, thus exhibiting improved electrical properties, e.g., increased charge mobility, and to a method of manufacturing the organic thin film transistor.

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract: An electro-optical device includes a substrate having a plurality of pixel electrodes thereon, a bank structure formed on the substrate and provided with a plurality of pixel apertures corresponding to the plurality of pixel electrodes, an injection layer formed in each of the plurality of pixel apertures for injecting electrons or holes, an organic semiconductor layer formed on the injection layer in each of a plurality of pixel apertures; and an electrode formed on the organic semiconductor layer, P wherein the individual bank includes a lyophilic layer formed on the substrate and a lyophobic layer formed on the lyophilic layer. Here, each of the plurality of the pixel apertures is formed so as to penetrate the lyophilic layer and the lyophobic layer. The lyophobic layer has relatively weak affinity for a material solution used for forming the injection layer in comparison with the lyophilic layer and includes a plurality of lyophilic portions corresponding to the plurality of pixel apertures.

Abstract: An organic thin-film transistor, including a layer exposing a benzene ring, having a surface separation of from 2.8 to 3.0 ?; and an organic semiconductive layer located overlying the layer exposing a benzene ring.

Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

Abstract: In a chip (2) comprising a semiconductor body (6) and an integrated circuit (7) formed in the semiconductor body (6) and a passivation layer (14) designed to protect the integrated circuit (7) and a test contact configuration (15), the test contact configuration (15) has a test contact layer (16) lying below the passivation layer (14) and a test contact block (18) connected to the test contact layer (16), which test contact block (18) with a portion thereof projects through a hole (17) in the passivation layer (14) to the test contact layer (16) and is connected to the test contact layer (16), wherein the test contact block (18) has a contact region (20) lying above the passivation layer (14).

Abstract: A liquid crystal display panel including an active device array substrate, a second substrate, a sealant, and a liquid crystal layer is provided. The active device array substrate has a display area and a peripheral area surrounding the display area, and includes a first substrate, pixels, signal lines, floating lines, and a common circuit layer. The signal lines are electrically connected with the pixels. The floating lines are disposed in fan-out areas of the peripheral area. Each of the floating lines is aligned with one of the signal lines respectively. The common circuit layer is disposed on an area of the peripheral area outside the fan-out areas. An overall thickness of the floating line and the signal line aligned therewith is equal to a thickness of the common circuit layer. The sealant covers the floating lines, a part of the signal lines and the common circuit layer.