Abstract: There is provided a charged particle generator configured to be resistant to outside discharge, and an accelerator comprising the generator and an acceleration tube for accelerating charged particles by application of an acceleration voltage.

Abstract: It is a technical challenge to provide a small-sized ion source excellent in operability.

Abstract: An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.

Abstract: A biomarker generator system for producing approximately one (1) unit dose of a biomarker. The biomarker generator system includes a small, low-power particle accelerator (“micro-accelerator”) and a radiochemical synthesis subsystem having at least one microreactor and/or microfluidic chip. The micro-accelerator is provided for producing approximately one (1) unit dose of a radioactive substance, such as a substance that emits positrons. The radiochemical synthesis subsystem is provided for receiving the radioactive substance, for receiving at least one reagent, and for synthesizing the approximately one (1) unit dose of a biomarker.

Abstract: A point of use water purifier for use in rural and under developed areas having a supply reservoir chamber in a first container and a treatment reservoir chamber in a second container underlying the first container and into which the first container is fitted, the water purifier employing a UV radiation source to selectively on demand expose untreated water selectively delivered from the supply reservoir chamber to the treatment reservoir chamber prior to dispensing water from the water purifier for consumption. The water purifier is connectable to an electrical power source such as a 12 volt battery or solar powered battery and is effective to remove substantially all viruses, bacteria and mold spores from untreated water in a short time upon exposure to UV radiation.

Abstract: At least one exemplary embodiment is directed to an alignment apparatus which includes a moving member, a structural object arranged on the moving member, and an electromagnetic actuator which moves the structural object relative to the moving member. The electromagnetic actuator includes a plurality of linear motor units, which apply forces in the horizontal direction and the vertical direction to the structural object. The plurality of linear motor units apply, to the structural object, forces in the rotation direction about each of two axes orthogonal to each other in the horizontal plane and the rotation direction about the axis in the vertical direction.

Abstract: The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radiation source and the infrared radiation source may be used alone or in combination to supply heat, activate electronic, or create active species inside the thermal processing chamber.

Abstract: A system and method for sterilizing a surface on an input device is disclosed. A chamber is configured to enclose an input device such as a keyboard and is configured to be switched between an open and a closed state. A drive unit may be provided to switch the chamber between states. In an embodiment, the drive unit may include a motor. A sensor provides a signal to a controller when the chamber is the closed state and the controller actuates a UV light. In an embodiment, the controller actuates the drive unit and the UV light in response to a trigger. In an embodiment, the trigger may be provided from a change in state in a computer coupled to the input device.

Abstract: Techniques for sterilizing a fomite are disclosed. A UV sterilization apparatus includes a housing for enveloping a fomite inside the housing. The housing is composed of a material that prevents transmission of electromagnetic radiation in the ultraviolet range. Attached to the housing is a closure element, and the closure element is also composed of a material that prevents transmission of electromagnetic radiation in the UV range but allows transmission of electromagnetic radiation in the visual range. An ultraviolet light source is attached to an internal surface of the housing or an internal surface of the closure element, and the light source sterilizes the fomite enclosed inside the housing by transmitting ultraviolet electromagnetic radiation towards the fomite.

Abstract: A portable sterilizer is disclosed. The portable sterilizer is composed of a housing for carrying and a sterilization device such as a UV light or an ozone generator inside the housing. A chamber with certain space is disposed inside the housing, connecting with the sterilization device for being disinfected. An opening is on the housing for putting tableware such as knives, forks, spoons or chopsticks inside the chamber to be sterilized by UV light or ozone gas. Thus users can carry the present invention with them and sterilize tableware or daily essentials easily.

Abstract: The invention relates to a method for processing fluorescence signals emitted after excitation by radiation coming from a radiation source, by at least one fluorophore with a lifetime r in a surrounding medium, which signals are detected by detection means, and which method comprises the calculation, on the basis of detected fluorescence signals, of values of a variable, independent of ?, of the position or the distribution of fluorophore in said medium.

Abstract: A electron beam etching apparatus uses carbon nanotube as electron emitter. The electron beam etching apparatus includes a vacuum chamber, a cathode plate, an anode plate and a driver unit. The cathode plate and the anode plate are arranged in the vacuum chamber and parallel to each other. The cathode plate includes a plurality of cathode units, where each of the cathode units uses a carbon nanotube as an electron emitter. A gate conductive layer is provided atop the cathode unit. The anode plate includes a substrate and an etching target. The driver unit is electrically connected to the cathode unit and gate conductive layer. The driver unit controls the cathode unit through the gate conductive layer to generate electron beam for etching. The accuracy of etching process can be improved and the cathode unit has the advantage of replacement possibility.

Abstract: Since the conventional optical disk recording/reproducing apparatus cannot correctly measure a power of a main beam that is a part of the laser light outputted from an objective lens and is focused on a recording layer to contribute to recording/reproducing, it is difficult to accurately control a read power. A ratio of a proper read power to a threshold power of erasing is acquired beforehand. The read power is determined by measuring the threshold power of erasing and multiplying it by the ratio when learning of the read power is performed for each drive device. According to the read power learning method of this invention, it becomes possible to determine the proper read power regardless of performance variance of an optical pickup and sensitivity dispersion of a medium.

Abstract: A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.

Abstract: A beam directing element configured to receive a substantially collimated input beam of predetermined wavelength propagating in a first direction and to output a substantially collimated output beam in a second direction includes a prism formed of a transparent material and having input and output faces, wherein the internal angle between the input face and the output face is such that when the input beam is incident on the input face substantially at Brewster's angle, it is internally incident on the output face at Brewster's angle. The beam directing element is useful in lithography, for example in beam delivery systems.

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.

Abstract: A pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which enable to maintain normality of the charged beam photolithography apparatus are provided. The pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus is a pattern writing circuit self-diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target sample to write a desired pattern. Layout information and a pattern writing conditions which is prepared in advance are input to the pattern writing circuit, and processing result data of the pattern writing circuit output as a result of the inputting is collected. The collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the pattern writing circuit self-diagnosis method.

Abstract: In a via-hole formation method of forming a via-hole reaching a bonding pad, in a substrate of a wafer in which a plurality of devices are formed on a surface of the substrate and the bonding pad is formed on each of the devices, a pulse laser beam whose energy distribution is shaped into a top-hat shape is emitted to form a via-hole reaching a via-hole.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Abstract: A charged particle beam pattern writing apparatus includes an input part for inputting a predetermined command, a check part for checking a state of a predetermined function used for pattern writing using a charged particle beam, based on the predetermined command, and an output part for outputting the state of the predetermined function which has been checked.

Abstract: A semiconductor device fabrication apparatus includes a load lock chamber, a loading assembly in the load lock chamber, and an ion implantation target chamber that is hermetically connected to the load lock chamber. The load lock chamber is configured to store a plurality of wafer plates. Each wafer plate respectively includes at least one semiconductor wafer thereon. The ion implantation target chamber is configured to implant an ion species into a semiconductor wafer on a currently loaded wafer plate. The loading assembly is also configured to load a next one of the plurality of wafer plates from the load lock chamber into the ion implantation target chamber. The loading assembly may be configured to load the next wafer plate from the load lock chamber into the ion implantation target chamber while substantially maintaining a current temperature within the ion implantation target chamber and/or without depressurizing the ion implantation target chamber. Related methods and devices are also discussed.

Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

Abstract: A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.

Abstract: A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.

Abstract: Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling ion implantations. Then, movement of a wafer along a second non arcuate scan path is adjusted according to the non uniform ion implantation function to facilitate uniform ion implantations.

Abstract: A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

Abstract: There are disclosed methods for machining components, such as thermocouples 280 or SQUIDs 330, using ion beam milling. Ion beam milling is performed on a material 200 to expose a sliver 240. A sharp probe 161 is then attached to the sliver 240, for example by deposition of a tungsten weld 250. Further ion beam milling 261, 262, 263 is then performed to separate the sliver 240 from the material 200. The sliver 240 is then ion beam milled to produce the device 280, 330. In some embodiments, the thermocouple 280 is mounted to a substrate such as a silicon wafer having integrated signal conditioning circuitry. The invention allows small components (of the order of 1 ?m) to be accurately manufactured without being constrained by typical lithographic constraints.

Abstract: A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

Abstract: A steering component is included in an ion implantation system to direct or “steer” an ion beam to a scan vertex of a scanning component downstream of the steering component. In this manner, the scan vertex of the scanning component coincides with the focal point of a parallelizing component downstream of the scanning component. This allows the beam to emerge from the parallelizing component at an expected angle so that ions can be implanted in a desired manner into a workpiece located downstream of the parallelizing component.

Abstract: There is disclosed a cross-sectional specimen preparation apparatus. The milling position can be modified or corrected in a short time. Also, the internal structure of the specimen can be known. The apparatus has an optical observation device for observing a cross section of the specimen milled by the ion beam. During ion beam irradiation or when the irradiation is interrupted, a shutter is opened. The cross section of the specimen can be observed while maintaining the vacuum inside a processing chamber. The apparatus further includes an adjusting mechanism for varying the relative position between the specimen and the shielding material. Whenever one sectioning operation ends, an image of the cross section is accepted and the milling position is moved an incremental distance. A three-dimensional image of the specimen is constructed from obtained plural images.

Abstract: One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

Abstract: It is an object of the present invention to provide a focused ion beam apparatus capable of prolonging a service life of an aperture, preventing contaminants from increasing when a column valve is closed, and being quickly restarted. A high-voltage power supply controller lowers an extraction voltage applied to an extraction electrode or lowers a control voltage applied to a control electrode to set an emission to 0 ?A when a column valve is closed. The high-voltage power supply controller returns the extraction voltage applied to the extraction electrode to an original extraction voltage or returns the control voltage applied to the control electrode to an original control voltage when a column valve is opened.

Abstract: Optimized dose assignments are determined for each portion of a layout by utilizing an improved proximity function and additional dose correction functions in performing a short range proximity effect correction. The optimized dose assignments are determined to minimize critical dimension (CD) deviations and maintain CD linearity across different feature sizes. The improved proximity function and additional dose correction functions are determined by calibration based on experimental CD measurements of test designs. The improved proximity function includes a sum of more than two Gaussian functions, each having an associated effect range and an associated weight, wherein one or more of the associated weights may be negative. The additional dose correction functions include an iso-dense bias correction function and a dose evaluation point displacement function for line end shortening correction.

Abstract: The positions of diffraction gratings used for calibration can be checked easily by arranging marks near the diffraction gratings, the marks indicating the coordinate positions of the diffraction gratings. Dummy patterns including a pattern of cross marks are arranged around the array of the diffraction gratings. Consequently, a uniform diffraction grating pattern is accomplished in which the proximity effect is uniform across the diffraction grating array. Furthermore, cross marks can be disposed adjacent to the diffraction grating array. Therefore, the diffraction gratings can be placed in position and calibrated accurately and easily by using a standard component capable of realizing accurate positioning of the diffraction gratings. Hence, accurate metrology calibration coping with the next generation of semiconductor lithography technology can be accomplished.

Abstract: An improved particle beam treatment system optionally includes exchangeable particle beam nozzles. These particle beam nozzles may be automatically moved from a storage location to a particle beam path or between particle beam paths for use in medical applications. Movement may be achieved using a conveyance, gantry, rail system, or the like. The improved particle beam treatment system optionally also includes more than two alternative particle beam paths. These alternative particle beam paths may be directed to a patient from a variety of different angles and in different planes.

Abstract: An improved particle beam treatment system optionally includes exchangeable particle beam nozzles. These particle beam nozzles may be automatically moved from a storage location to a particle beam path or between particle beam paths for use in medical applications. Movement may be achieved using a conveyance, gantry, rail system, or the like. The improved particle beam treatment system optionally also includes more than two alternative particle beam paths. These alternative particle beam paths may be directed to a patient from a variety of different angles and in different planes.

Abstract: An improved particle beam treatment system optionally includes exchangeable particle beam nozzles. These particle beam nozzles may be automatically moved from a storage location to a particle beam path or between particle beam paths for use in medical applications. Movement may be achieved using a conveyance, gantry, rail system, or the like. The improved particle beam treatment system optionally also includes more than two alternative particle beam paths. These alternative particle beam paths may be directed to a patient from a variety of different angles and in different planes.

Abstract: An improved particle beam treatment system optionally includes exchangeable particle beam nozzles. These particle beam nozzles may be automatically moved from a storage location to a particle beam path or between particle beam paths for use in medical applications. Movement may be achieved using a conveyance, gantry, rail system, or the like. The improved particle beam treatment system optionally also includes more than two alternative particle beam paths. These alternative particle beam paths may be directed to a patient from a variety of different angles and in different planes.

Abstract: The present invention improves the accuracy of therapy by checking in real time whether an spread-out Bragg peak (SOBP) width agrees with a desired width during irradiation with a beam. The device for outputting a charged particle beam includes a charged particle beam generator 1 including a synchrotron 4; a range modulation device such as a range modulation wheel (RMW) 28 which forms a Bragg peak of an ion beam extracted from this charged particle beam generator 1; an irradiation device 16 which is located in the direction of ion beam propagation of this RMW device 28 and includes a dose monitor 31 for detecting a dose of the ion beam; and an SOBP width calculation device 73 which calculates ion beam Bragg peak formed by the RMW device 28 based on a detection value of the dose monitor 31.

Abstract: An apparatus for producing radiation by an electrically operated discharge has a first electrode, a second electrode. and a capacitor bank. The electrodes are configured at a distance from each other which allows plasma ignition. The capacitor bank is electrically connected at a first terminal to the first electrode and at a second terminal to the second electrode, and configured to store a discharge energy. The electrodes and the capacitor bank form an electric circuit. At least the first electrode is formed by an electrically conducting fluid supplied via a first feeding line. The apparatus further has a charger and a first high inductance unit. The charger is connected to at least one of the terminals. The first high inductance unit is provided upstream the first terminal in the first feeding line for electrically decoupling the electric circuit.

Abstract: A rotatable contamination barrier is disclosed. The barrier includes a plurality of closely packed blades for trapping contaminant material coming from an EUV radiation source. The blades are oriented radially relative to a central rotation axis of the contamination barrier. The contamination barrier is segmented in an inner segment and an outer segment relative to the central rotation axis. Accordingly, higher revolution speeds may be attained without compromising the contamination barrier.

Abstract: A hand-held thermography system (8). A generator (10) supplies current to a transformer (15) in a handle (16). An induction coil (20) connected to the transformer (15) extends from the handle (16). The induction coil (20) induces eddy currents in a test object (50), producing a thermal topography on a surface (52) of the object (50) that reveals structural features including defects in the object. An infrared camera (24) mounted on the transformer (16) digitizes images of the thermal topography. A controller (12) processes the images, displays them on a monitor (14), and stores them in a digital memory (11) for evaluation. Digitized positional data relating the position of the image to the surface may also be stored. An operator (40) presses a trigger (17), signaling the controller (12) to start current to the induction coil (20) and simultaneously to acquire and process one or more images from the camera (24).

Abstract: The invention is directed to an arrangement for generating extreme ultraviolet radiation from a plasma generated by an energy beam with high conversion efficiency, particularly for application in radiation sources for EUV lithography. It is the object of the invention to find a novel possibility for generating EUV radiation by means of a plasma induced by an energy beam that permits a more efficient conversion of the energy radiation into EUV radiation in the wavelength region of 13.5 nm and ensures a long lifetime of the optical components and the injection device.

Abstract: A patient bed is provided having an elevation mechanism resting on a platform and a collimator assembly, where the weight of the collimator assembly is selectively supported by one of the combination of the elevation mechanism and the platform when there is no patient laying on a mattress of the patient bed, and the platform alone when there is a patient laying on the mattress of the patient bed. The patient bed further includes first and second docking assemblies respectively mounted to a bed frame and the platform for docking the collimator assembly. The docking assemblies include self-aligning guide pins for maintaining a horizontal position of the collimator assembly and its collimators therein during docking and post-docking.

Abstract: A blowout preventer operator locking system comprises a piston rod having one end coupled to a closure member. The operator further comprises an operator housing having one end coupled to a bonnet and a second end coupled to a head. The piston rod extends through the bonnet into the operator housing where it is coupled to a piston that is disposed within the operator housing. The piston comprises a body and a flange. A sleeve is slidingly disposed within a cavity disposed within the piston and is rotationally fixed relative to the piston. A lock rod is rotatably coupled to the head and is threadedly engaged with the sleeve so that rotation of the lock rod axially translates the sleeve relative to the piston.

Abstract: A pinch valve for regulating fluid flow having a close mechanism using push-pull members and an open mechanism using open follower members in order to pinch a sleeve closed and to assist in opening it. In a particular embodiment, a four-bar linkage is employed.

Abstract: An apparatus and method for manual operation of an actuator is disclosed. A mechanical override includes a housing coupled to the actuator, a drive ring, and a shaft extending through a bore of the housing. The drive ring rotationally keys to the bore such that the drive ring is capable of axial movement within the bore in response to automatic operation of the actuator. A backstop limits axial movement of the drive ring during manual operation. A thread located on an external portion of the shaft threads to the drive ring. In the manual operation, the shaft rotates through the drive ring imparting axial movement to the shaft capable of moving a valve between a first position and a second position. The override provides visual indication of the valve position during both automatic and manual operation. The backstop may be an insert that selectively permits movement of the shaft to a failsafe position in response to a temperature or pressure change.