Abstract: An angle-measuring system comprising at least one transmitter provided with a number of complementary signal-generating elements disposed in pairs and creating a pattern of signals. The elements create a reference mark irregularly configured at least at one spot. A device for acquiring the signals and an evaluation unit are also part of the angle-measuring system. The device is provided with at least one first sensor and one second sensor.

Abstract: The photoelectric encoder of the present invention has a light-emitting device and light-receiving devices arranged in one direction in a region that light from the light-emitting device can reach. When a moving object that alternately has a light-on portion that produces a state in which light is incident on the light-receiving device and a light-off portion that produces a state in which light is not incident on the light-receiving device passes at a prescribed movement frequency in the one direction, an output of each of the light-receiving devices takes a value corresponding to the incidence or nonincidence of light on the light-receiving device. A logical operating section carries out operation of the logical values expressed by the outputs of the light-receiving devices to form an output signal that has a frequency different from the movement frequency.

Abstract: In two phases signals (A, B) outputted from a scale or a scale having a discontinuous portion provided in its incidental member to a light receiving portion, a region in which amplitudes of the two phases signals (A, B) are small corresponds to outputs when a reflecting portion lies in the scale in terms of rotation position, and a region in which amplitudes of the two phases signals (A, B) are large corresponds to outputs when a nonreflecting portion lies in the scale in terms of rotation position. An optical encoder for discriminating positions of a reflecting portion and a nonreflecting portion of a scale using a threshold value (L) to detect an absolute position based on a reason that when the signals (A, B) are arithmetically operated by an arithmetic operation processing circuit to obtain a sum of squares of the signals (A, B), change points in the amplitudes of the signals (A, B) are steeply obtained.

Abstract: An apparatus (100) for detecting rotational angle of a rotational element (110), includes a light emitting element (1) and an image detecting element (3). The light emitting element is disposed on the rotational element to emit light. The image detecting element has a plurality of reception zones (31, 32 . . . N) for receiving the light emitted. Each of the reception zones corresponds to an angular section of the rotational element.

Abstract: The present invention provides scanning beam devices that have one or more detectors positioned within a housing of the device. The detector(s) may be disposed anywhere within the housing to receive light reflected from the target area. In one embodiment, an optical assembly of the device transmits a first portion of the reflected light to a scanning element, and a second portion of the reflected light to the detectors. In another embodiment, the optical assembly is configured to transmit substantially all of the reflected light to the scanning element. In such embodiments, the scanning element will be adapted to allow the light to exit the scanning element and impinge on the detector(s) within the housing.

Abstract: An outside rear-view mirror for a vehicle, which is designed to support an image-detector device is disclosed. The assembly comprises a casing with a reflector fastening device and a detector fastening device configured to mount either a first reflector installed over the detector fastening device, hiding them, or a second reflector, smaller than the first one, leaving the detector fastening device clear and available for the installation of the image detector device in operating conditions.

Abstract: Systems, methods, and computer programming for collecting data using a mass spectrometer comprising a particle detector or other mass analyzer. A data collection such as a tree or array structure which includes data records for storing detected data is maintained in volatile or persistent memory. Data is received from the mass analyzer. Whether the collection contains data records corresponding to newly-acquired data signals is determined. If the collection does not contain records corresponding to the newly-received records, a new record is added. In either case, the record corresponding to the received data record is updated to reflect reception of the newly-acquired signal.

Abstract: The present invention provides for systems and methods for automated quantification of individual compounds in a mixture. The invention is generally concerned with quantitative analysis of solid, liquid, or gas samples and relies on a separation instrument and on a mass detector. The separation instrument provide means to separate the individual compounds typically according to certain physicochemical property, and the mass detector provides means to determine the amount or concentration of an arbitrary compound using an instrument-specific calibration curve. The present invention provides automated capability to analyze such mixtures without user intervention by varying pre-determined control parameters on one or more of the instruments so as to achieve a high degree of analytical resolution of some or all of the individual compounds in the mixture.

Abstract: The invention generates mass scale comparability between mass spectra which are acquired in time-of-flight mass spectrometers, particularly with ionization by matrix-assisted laser desorption. Always slightly distorted mass scales of different mass spectra from the same type of sample can be aligned. The flight times of identical ions always differ slightly from one mass spectrum to the next due to non-reproducible processes in the ionization method. Thus the apparent mass values of ion signals of identical substances in different mass spectra do not match even if the flight times are converted into mass values with the identical calibration equation. After alignment of the mass scales, mass spectra can be reliably compared with respect to deviations in intensities of bio-makers, or be added together without deterioration in the mass resolution, and improved reference spectrum libraries can be created. Furthermore, the invention allows more reliable library searches to be carried out.

Abstract: The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.

Abstract: An on-axis ion source has an ionization chamber and an adjacent low-pressure region. The on-axis ion source also includes a capillary tube having an axial bore for supporting fluid communication between the ionization chamber and the adjacent low-pressure region, the axial bore of the capillary tube being substantially concentrically aligned with the orifice of a skimmer located downstream in the ion path from the capillary tube. A blocking element is provided in an aligned facing arrangement with the axial bore of the capillary tube and on an opposite side of the orifice relative to the capillary tube. The blocking element receives droplets or particles flowing through the axial bore of the capillary tube and passing through the orifice of the skimmer. The combination of an on-axis arrangement and the use of a blocking element results in improved signal-to-noise level due to enhanced ion transmission and reduction of noise arising from passage of undesolvated droplets and particles to the mass analyzer.

Abstract: The invention provides related apparatus and methods of making an integrated electrospray tip by depositing ionic and/or electronic conductor materials onto a planar substrate. The invention also features methods of forming an electrospray apparatus comprising coupling a first planar substrate to the surface of a second planar substrate, wherein a surface on at least one of the substrates includes one or more microfluidic channels and/or reservoirs which are at least partially or totally enclosed therebetween. The conductive regions of the apparatus do not intersect the microfluidic channels within other portions of the apparatus provided preferably. The invention further provides related apparatus and methods for manufacturing and using microfluidic devices with integrated electrodes for electrospray ionization.

Abstract: The invention relates to RF voltage-operated ion guides based on stacked apertured diaphragms. The invention provides ion guides consisting of diaphragm stacks that permit the ion beam to be shaped in cross-section so that it corresponds to the acceptance profile of the subsequent section of the device, therefore yielding optimal ion transmission. For this purpose, at least some of the diaphragms in the diaphragm stacks do not have circular openings, but instead have openings which shape the cross section of the emerging ion beam in the desired manner. It is possible, for instance, to obtain elliptical beam cross sections, divided beams or beams focused to the shape of a fine thread at the output of the diaphragm stacks.

Abstract: A scanning probe microscope (SPM) is provided capable of a narrow to a wide range observation according to observed targets or purposes without replacing a scanner while maintaining a high resolution. The SPM is provided with a probe-side scanner 10 and a sample-side scanner 11. The probe-side scanner 10 is to move the probe 13 in X-, Y-, Z-axis directions, and the sample-side scanner 11 is to move the sample 12 in the X-, Y-, Z-axis directions. A scanner with a small maximum scan range is used as the probe-side scanner 10; a scanner with a large maximum scan range is used as the sample-side scanner 11; and both can be switched between each scanner for use according to the observed targets or purposes. Alternatively, the probe-side scanner 10 is used for scanning in a narrow range, and the sample-side scanner 11 is used to move the field of view.

Abstract: Electron beam lithography tool image quality evaluating and correcting including a test pattern with a repeated test pattern cell, an evaluation method and correction program product are disclosed. The test pattern cell includes a set of at least three elongated spaces with each elongated space having a different width than other elongated spaces in the set such that evaluation of a number of space widths in terms of tool image quality and calibration can be completed. The evaluation method implements the test pattern cell in a test pattern in at least thirteen sub-field test positions across an exposure field, which provides improved focus and astigmatism corrections for the lithography tool. The program product implements the use of corrections from the at least thirteen sub-field test positions to provide improved corrections for any selected sub-field position.

Abstract: An apparatus is disclosed for the conversion of radiation. The apparatus includes a mesoscopic sized region, an interface surrounding the mesoscopic sized region and contacting the mesoscopic region to form an energetic barrier sufficient to spatially confine free carriers in the mesoscopic sized region, and a matrix material surrounding the interface. At least one of the interface and the matrix material provides radiative recombination of the free carriers.

Abstract: A spectrometer includes an infrared source, a spectrally selective element, and a cell array. The cell array includes walls that define a number of cavities. The spectrometer also includes an infrared spatial detector responsive to infrared radiation travelling from the infrared source through contents of at least two of the cavities as well as through the spectrally selective element.

Abstract: The invention relates to a planning tool for the interactive selection of control variables (x1, y7, ?1, ?2, ?3, I1, I2) of a radiation therapy plan from a database (1) comprising a plurality of pre-calculated solutions. Each solution represents a radiation therapy plan which, from a technical point of view, consists of a plurality of control variables or instructions. Each solution also has characteristic values for radiation doses for a target volume (T, Target) and at least one risk volume (risk organ, h1, h2, h3) which are stored in the database (1). A plurality of axes are visibly represented on a display device (3; 3a, 3b) as radiation dose scales (30, 31, 32, 33) for the target volume (T) and the at least one risk volume (h1, h2, h3), for the formation of at least one risk axis and one target axis.

Abstract: Image quality deterioration due to a drop in resolution or lowering of S/N ratio while reducing the amount of data stored during a 3D data acquisition process, and shortening the time from the start of an examination to the end of imaging. The method and apparatus of this invention perform, in parallel with the 3D data acquisition process, addition of sinograms, reading of subsets of the sinograms having been added, and image reconstruction. Consequently, the amount of data stored is reduced, and the time from the start of an examination to the end of imaging is shortened. At the same time, since 3D iterative reconstruction is not accompanied by conversion from 3D data to 2D data, a drop in resolution due to errors occurring with the conversion from 3D data to 2D data is avoided. The 3D iterative reconstruction can directly incorporate processes such as an attenuation correction process. It is thus possible to avoid also a lowering of S/N ratio resulting from an indirect incorporation of such processes.

Abstract: Digital images or the charge from pixels in light sensitive semiconductor based imagers may be used to detect gamma rays and energetic particles emitted by radioactive materials. Methods may be used to identify pixel-scale artifacts introduced into digital images and video images by high energy gamma rays. Statistical tests and other comparisons on the artifacts in the images or pixels may be used to prevent false-positive detection of gamma rays. The sensitivity of the system may be used to detect radiological material at distances in excess of 50 meters. Advanced processing techniques allow for gradient searches to more accurately determine the source's location, while other acts may be used to identify the specific isotope. Coordination of different imagers and network alerts permit the system to separate non-radioactive objects from radioactive objects.

Abstract: A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member.

Abstract: A spectroscopy system is provided which is optimized for operation in the VUV region and capable of performing well in the DUV-NIR region. Additionally, the system incorporates an optical module which presents selectable sources and detectors optimized for use in the VUV and DUV-NIR. As well, the optical module provides common delivery and collection optics to enable measurements in both spectral regions to be collected using similar spot properties. The module also provides a means of quickly referencing measured data so as to ensure that highly repeatable results are achieved. The module further provides a controlled environment between the VUV source, sample chamber and VUV detector which acts to limit in a repeatable manner the absorption of VUV photons. The use of broad band data sets which encompass VUV wavelengths, in addition to the DUV-NIR wavelengths enables a greater variety of materials to be meaningfully characterized.

Abstract: A system for detecting a compound in a sample includes a neutron source, at least one gamma ray detector positioned proximate the sample, and a signal processor. The neutron source directs a neutron beam toward the sample. The gamma ray detector collects gamma rays emitted from the sample and the signal processor determines the compounds in the sample based on the gamma rays collected by the gamma ray detector. The compound is selected from the group consisting of peroxides and superoxides.

Abstract: A waveform detector may include multiple stages.

Abstract: One embodiment described relates to a multiple electron beam apparatus. Multiple columns are arranged in a row configured to generate multiple electron beams. A mechanism is included for translating a substrate so as to be impinged upon by the multiple electron beams. A direction of the substrate translation and a direction of the row of columns are at a skew angle.

Abstract: One embodiment pertains to an apparatus which impinges a focused electron beam onto a substrate. The apparatus includes an irradiation source and at least two non-axisymmetric lenses. The irradiation source is configured to originate electrons for an incident electron beam. The non-axisymmetric lenses are positioned after the irradiation source and are configured to focus the beam in a first linear dimension so as to produce a linear crossover of the beam. The non-axisymmetric lenses are further configured to subsequently focus the beam in a second linear dimension, which is substantially perpendicular to the first linear dimension. Finally, the non-axisymmetric lenses are also configured to produce a focused image at an image plane. Other embodiments are also disclosed.

Abstract: There is provided a method and a device of monitoring oil oxidation in real time. The method of the present invention comprises the steps of: irradiating ultraviolet light into oil to be monitored; measuring fluorescence emission intensity of the oil in red, green and blue wavelength bands; determining one value measured in a relatively long wavelength band and the other value measured in a relatively short wavelength band among the fluorescence emission intensity measured in the red, green and blue wavelength bands; calculating a fluorescence emission ratio which is defined as a ratio of the value measured in the relatively long wavelength band to the value measured in the relatively short wavelength band; and monitoring a change in the fluorescence emission ratio. It is then determined whether the fluorescence emission ratio reaches a predetermined critical magnitude. When the fluorescence emission ratio reaches the critical magnitude, the necessity of replacing the oil with new one is indicated.

Abstract: The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.

Abstract: The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens array comprising a plurality of lenses, wherein said lens array is located between said charged particle source and said converging means. In this way, it is possible to reduce aberrations of the converging means.

Abstract: A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translating a wafer. The apparatus may also comprise a deflector that tilts an ion beam to a predetermined angle and directs the ion beam into the end station. The wafer may be translated with respect to the ion beam for isocentric scanning at least a portion of a surface of the wafer, and wherein the ion beam is maintained at the predetermined angle during isocentric scanning.

Abstract: A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of a semiconductor chip. A time point where the electron beam transmits through the silicon substrate, a contrast of a secondary electron image of a separation layer, a polysilicon layer and the like is detected by a picture image processing system is assumed to be a processing end point. At this time, by changing a setting for an acceleration voltage of the electron beam, an arbitrary remaining silicon thickness can be obtained.

Abstract: A heat emitting beacon having a rotating parabolic mirror to concentrate the heat from a gas heat source, said mirror back being coated with a passive cold emission material comprised of a metalized plastic film creased and crumpled to form a multitude of reflective facets and preventing any reflected light. In a second embodiment, a rotating, single- or double-sided surface is coated with the passive cold emission material. In another embodiment, a signal beacon is comprised of a plurality of detachable strips of the passive cold emission material. In another embodiment, a plurality of surface elements covered with the passive cold emission material is arranged as a louver.

Abstract: A germicidal UV reactor for use in fluid purifiers is provided, in which the UV reactor comprises an UV lamp with an UV transparent primary envelope and also an UV transparent secondary envelope around the primary envelope. The outer surface of the secondary envelope is in contact with a flowing fluid to be purified. There is an isolating space between the outer surface of the primary envelope and the inner surface of the secondary envelope. At least one of the outer surface of the primary envelope and the inner surface of the secondary envelope is provided with electrical means for heating and thus enhancing UV emitting efficiency of the UV lamp.

Abstract: A method of using a radiation protection system including a table having a top surface for supporting a patient, a radiation-shielding screen attached to the table for covering a portion of the patient and a portion of the top surface of the table, and controls for controlling the system. The radiation-shielding screen includes at least one port. The method includes extending the radiation-shielding screen over a portion of the patient the table and accessing the controls through the port. The method further includes controlling the system using the controls.

Abstract: Various edge detection arrangements are disclosed, including an edge detection method and arrangement that utilizes outputs of commonly illuminated reference and edge sensors as the inputs for a comparator. The reference sensor is configured to have a wide field of view and the edge sensor is configured to have a narrow, high gain, field of view. Therefore, the reference sensor has a broad signal response to an edge passage and the edge sensor a steep and narrow signal response. When the two signals are biased to cross each other, the comparator output changes state, indicating passage of an edge. Because the reference sensor provides a base signal level directly related to the real time illumination level that the edge sensor also receives, the reference sensor provides a switch point along the transition ramp of the edge sensor that integrates a majority of the random error sources.

Abstract: Load fluctuations caused by a change in moving direction of a linear motor 23 are prevented by affixing a belt 21 tensioned by a pair of pulleys 22 on the linear motor 23 for moving a reading light source portion 31 and affixing a counterweight 26 on the belt 21 at a portion diagonally opposite to the portion where the linear motor 23 is affixed with respect to the center axis of the belt 21. Further, damping devices (magnets 40 and 41) which impart a bias load to the counterweight 26 in the direction perpendicular to the tensioning direction of the belt 21 is provided, so that vibration produced during traveling of the linear motor 23 is suppressed and accordingly the traveling accuracy of the linear motor 23 is increased.

Abstract: A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.

Abstract: A light source module for generating light, including a semiconductor light-emitting element, nano-particles having a diameter smaller than half the wavelength of light generated by the light source module, a fluorescent substance for generating visible light in accordance with light generated by the semiconductor light-emitting element, and a binder formed stratiformly for covering a light-emitting surface of the semiconductor light-emitting element to hold the nano-particles and the fluorescent substance, wherein the refractive index of the nano-particles is higher than the refractive index of the binder.

Abstract: A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside.

Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a s second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Abstract: Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

Abstract: A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low thermal conductivity.

Abstract: In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

Abstract: A TFT is provided completely separated by an insulating film, in which a parasitic MOSFET is not generated at ends of a semiconductor layer, and the variation in characteristics is small. At least one portion of the ends in the gate-width direction of a gate electrode forming the TFT is disposed in a semiconductor region which forms the TFT, and the ends in the gate-length direction of the gate electrode extend toward the outside of the semiconductor region forming the TFT. With this arrangement, a uniform TFT in which a parasitic MOSFET is not generated at the ends in the gate-width direction is obtainable.

Abstract: In order to make it possible to easily detect an electrical defect by using an array tester, the present inspection substrate includes: plural scan lines and plural signal lines; plural storage capacitor lines arranged in parallel to the scan lines; storage capacitor elements, each of which uses a part of the storage capacitor line as one of electrodes thereof; storage capacitor upper electrodes formed of the same layer as that for the signal lines and electrically connected to the storage capacitor elements; switching elements arranged on intersection points of the signal lines and the scan lines and electrically connected to the storage capacitor elements; and dummy wiring lines formed by use of at least one of two types of metals constituting electrodes of the switching elements, and electrically connected to any of the scan lines, the signal lines, the storage capacitor lines and the storage capacitor upper electrodes.

Abstract: The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from the channel forming region. Further, the first impurity region is disposed so as to overlap a side wall, and the side wall is caused to function as an electrode to thereby attain a substantial gate overlap structure. By adopting the structure, a semiconductor device of high reliability can be manufactured.

Abstract: A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

Abstract: Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Abstract: High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.

Abstract: A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each of the impurity concentrations exceeds 1×1017 cm?3 for at least one single impurity in all of the regions.